JP6059048B2 - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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Publication number
JP6059048B2
JP6059048B2 JP2013047900A JP2013047900A JP6059048B2 JP 6059048 B2 JP6059048 B2 JP 6059048B2 JP 2013047900 A JP2013047900 A JP 2013047900A JP 2013047900 A JP2013047900 A JP 2013047900A JP 6059048 B2 JP6059048 B2 JP 6059048B2
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JP
Japan
Prior art keywords
gas
flow rate
semiconductor region
etching
plasma
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Active
Application number
JP2013047900A
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English (en)
Japanese (ja)
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JP2014175521A5 (https=
JP2014175521A (ja
Inventor
真之 沢田石
真之 沢田石
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2013047900A priority Critical patent/JP6059048B2/ja
Priority to KR1020140025525A priority patent/KR102169565B1/ko
Publication of JP2014175521A publication Critical patent/JP2014175521A/ja
Publication of JP2014175521A5 publication Critical patent/JP2014175521A5/ja
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Publication of JP6059048B2 publication Critical patent/JP6059048B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Drying Of Semiconductors (AREA)
JP2013047900A 2013-03-11 2013-03-11 プラズマエッチング方法 Active JP6059048B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013047900A JP6059048B2 (ja) 2013-03-11 2013-03-11 プラズマエッチング方法
KR1020140025525A KR102169565B1 (ko) 2013-03-11 2014-03-04 플라즈마 에칭 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013047900A JP6059048B2 (ja) 2013-03-11 2013-03-11 プラズマエッチング方法

Publications (3)

Publication Number Publication Date
JP2014175521A JP2014175521A (ja) 2014-09-22
JP2014175521A5 JP2014175521A5 (https=) 2016-01-21
JP6059048B2 true JP6059048B2 (ja) 2017-01-11

Family

ID=51696448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013047900A Active JP6059048B2 (ja) 2013-03-11 2013-03-11 プラズマエッチング方法

Country Status (2)

Country Link
JP (1) JP6059048B2 (https=)
KR (1) KR102169565B1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6494424B2 (ja) * 2015-05-29 2019-04-03 東京エレクトロン株式会社 エッチング方法
JP6529357B2 (ja) * 2015-06-23 2019-06-12 東京エレクトロン株式会社 エッチング方法
JP7190940B2 (ja) * 2019-03-01 2022-12-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3803516B2 (ja) * 1999-09-22 2006-08-02 株式会社東芝 ドライエッチング方法及び半導体装置の製造方法
JP2003151960A (ja) * 2001-11-12 2003-05-23 Toyota Motor Corp トレンチエッチング方法
JP2005276931A (ja) * 2004-03-23 2005-10-06 Toshiba Corp 半導体装置およびその製造方法
JP2006339490A (ja) * 2005-06-03 2006-12-14 Toshiba Corp 半導体装置の製造方法
JP2007019191A (ja) * 2005-07-06 2007-01-25 Fujitsu Ltd 半導体装置とその製造方法
JP2008124399A (ja) * 2006-11-15 2008-05-29 Toshiba Corp 半導体装置の製造方法
JP4816478B2 (ja) * 2007-02-02 2011-11-16 東京エレクトロン株式会社 エッチング方法及び記憶媒体
JP2009021489A (ja) * 2007-07-13 2009-01-29 Toshiba Corp 半導体装置およびその製造方法
WO2009085672A2 (en) * 2007-12-21 2009-07-09 Lam Research Corporation Fabrication of a silicon structure and deep silicon etch with profile control
JP5226296B2 (ja) * 2007-12-27 2013-07-03 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
JP2012174854A (ja) 2011-02-21 2012-09-10 Tokyo Electron Ltd 半導体素子の製造方法

Also Published As

Publication number Publication date
KR20140111599A (ko) 2014-09-19
KR102169565B1 (ko) 2020-10-23
JP2014175521A (ja) 2014-09-22

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