JP6053474B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP6053474B2
JP6053474B2 JP2012259128A JP2012259128A JP6053474B2 JP 6053474 B2 JP6053474 B2 JP 6053474B2 JP 2012259128 A JP2012259128 A JP 2012259128A JP 2012259128 A JP2012259128 A JP 2012259128A JP 6053474 B2 JP6053474 B2 JP 6053474B2
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Japan
Prior art keywords
transistor
memory
region
source
floating gate
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Active
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JP2012259128A
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English (en)
Japanese (ja)
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JP2014107406A (ja
JP2014107406A5 (enExample
Inventor
谷口　泰弘
泰弘 谷口
奥山　幸祐
幸祐 奥山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Floadia Corp
Original Assignee
Floadia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp filed Critical Floadia Corp
Priority to JP2012259128A priority Critical patent/JP6053474B2/ja
Priority to US14/647,009 priority patent/US9646979B2/en
Priority to PCT/JP2013/079512 priority patent/WO2014083997A1/ja
Priority to TW102139904A priority patent/TWI582909B/zh
Publication of JP2014107406A publication Critical patent/JP2014107406A/ja
Publication of JP2014107406A5 publication Critical patent/JP2014107406A5/ja
Application granted granted Critical
Publication of JP6053474B2 publication Critical patent/JP6053474B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP2012259128A 2012-11-27 2012-11-27 不揮発性半導体記憶装置 Active JP6053474B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012259128A JP6053474B2 (ja) 2012-11-27 2012-11-27 不揮発性半導体記憶装置
US14/647,009 US9646979B2 (en) 2012-11-27 2013-10-31 Non-volatile semiconductor storage device
PCT/JP2013/079512 WO2014083997A1 (ja) 2012-11-27 2013-10-31 不揮発性半導体記憶装置
TW102139904A TWI582909B (zh) 2012-11-27 2013-11-04 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012259128A JP6053474B2 (ja) 2012-11-27 2012-11-27 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2014107406A JP2014107406A (ja) 2014-06-09
JP2014107406A5 JP2014107406A5 (enExample) 2015-11-05
JP6053474B2 true JP6053474B2 (ja) 2016-12-27

Family

ID=50827643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012259128A Active JP6053474B2 (ja) 2012-11-27 2012-11-27 不揮発性半導体記憶装置

Country Status (4)

Country Link
US (1) US9646979B2 (enExample)
JP (1) JP6053474B2 (enExample)
TW (1) TWI582909B (enExample)
WO (1) WO2014083997A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6306466B2 (ja) 2014-07-31 2018-04-04 株式会社フローディア 不揮発性ｓｒａｍメモリセル、および不揮発性半導体記憶装置
US9450052B1 (en) * 2015-07-01 2016-09-20 Chengdu Monolithic Power Systems Co., Ltd. EEPROM memory cell with a coupler region and method of making the same
US10892266B2 (en) * 2016-01-19 2021-01-12 Ememory Technology Inc. Nonvolatile memory structure and array
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
US11361215B2 (en) * 2017-11-29 2022-06-14 Anaflash Inc. Neural network circuits having non-volatile synapse arrays
WO2019124356A1 (ja) 2017-12-20 2019-06-27 パナソニック・タワージャズセミコンダクター株式会社 半導体装置及びその動作方法
KR102385951B1 (ko) * 2018-02-23 2022-04-14 에스케이하이닉스 시스템아이씨 주식회사 프로그램 효율이 증대되는 원 타임 프로그래머블 메모리 및 그 제조방법
US11462282B2 (en) 2020-04-01 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structure
CN114005477B (zh) * 2021-11-03 2023-03-10 中国电子科技集团公司第五十八研究所 一种高可靠共浮栅型Flash存内计算器件及阵列结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760864B2 (ja) 1984-07-13 1995-06-28 株式会社日立製作所 半導体集積回路装置
JPS6414798A (en) * 1987-07-09 1989-01-18 Fujitsu Ltd Non-volatile memory device
US5181188A (en) * 1989-07-07 1993-01-19 Sharp Kabushiki Kaisha Semiconductor memory device
US5331188A (en) * 1992-02-25 1994-07-19 International Business Machines Corporation Non-volatile DRAM cell
US5592415A (en) * 1992-07-06 1997-01-07 Hitachi, Ltd. Non-volatile semiconductor memory
JPH11186416A (ja) * 1997-12-19 1999-07-09 Rohm Co Ltd 不揮発性半導体記憶装置およびその製造方法
US6114724A (en) * 1998-03-31 2000-09-05 Cypress Semiconductor Corporation Nonvolatile semiconductor memory cell with select gate
JP3906177B2 (ja) * 2002-05-10 2007-04-18 株式会社東芝 不揮発性半導体記憶装置
US7209392B2 (en) * 2004-07-20 2007-04-24 Ememory Technology Inc. Single poly non-volatile memory
KR100795907B1 (ko) * 2006-09-07 2008-01-21 삼성전자주식회사 이이피롬 소자 및 그 형성 방법
JP5265898B2 (ja) * 2007-09-25 2013-08-14 ルネサスエレクトロニクス株式会社 半導体装置
JP2009194140A (ja) * 2008-02-14 2009-08-27 Renesas Technology Corp 半導体装置およびその製造方法
JP5316532B2 (ja) * 2008-03-31 2013-10-16 富士通セミコンダクター株式会社 半導体装置
JP2009267185A (ja) * 2008-04-28 2009-11-12 Sharp Corp 不揮発性半導体記憶装置
US8674422B2 (en) * 2012-01-30 2014-03-18 Synopsys, Inc. Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
US9001580B1 (en) * 2013-12-04 2015-04-07 Synopsys, Inc. Asymmetric dense floating gate nonvolatile memory with decoupled capacitor

Also Published As

Publication number Publication date
TW201448122A (zh) 2014-12-16
US9646979B2 (en) 2017-05-09
JP2014107406A (ja) 2014-06-09
TWI582909B (zh) 2017-05-11
WO2014083997A1 (ja) 2014-06-05
US20150311219A1 (en) 2015-10-29

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