JP6025085B2 - 複数のサファイア単結晶とその製造方法 - Google Patents

複数のサファイア単結晶とその製造方法 Download PDF

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JP6025085B2
JP6025085B2 JP2016004862A JP2016004862A JP6025085B2 JP 6025085 B2 JP6025085 B2 JP 6025085B2 JP 2016004862 A JP2016004862 A JP 2016004862A JP 2016004862 A JP2016004862 A JP 2016004862A JP 6025085 B2 JP6025085 B2 JP 6025085B2
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sapphire single
crystal
seed crystal
gap
single crystals
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JP2016060692A5 (https=
JP2016060692A (ja
Inventor
古滝　敏郎
敏郎 古滝
弘倫 斎藤
弘倫 斎藤
数人 樋口
数人 樋口
高橋　正幸
正幸 高橋
佐藤　次男
次男 佐藤
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Namiki Precision Jewel Co Ltd
Adamant Namiki Precision Jewel Co Ltd
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Namiki Precision Jewel Co Ltd
Adamant Namiki Precision Jewel Co Ltd
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JP2016004862A 2016-01-14 2016-01-14 複数のサファイア単結晶とその製造方法 Active JP6025085B2 (ja)

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JP2014190746A Division JP5895280B1 (ja) 2014-09-19 2014-09-19 複数のサファイア単結晶の製造方法

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JP2016060692A5 JP2016060692A5 (https=) 2016-06-09
JP6025085B2 true JP6025085B2 (ja) 2016-11-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12467157B2 (en) 2022-05-25 2025-11-11 Luxium Solutions, Llc Enclosed crystal growth

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6993287B2 (ja) * 2018-04-27 2022-01-13 京セラ株式会社 単結晶体の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609000B2 (ja) * 1977-05-25 1985-03-07 工業技術院長 帯状シリコン結晶の成長装置
JPS5567599A (en) * 1978-11-16 1980-05-21 Ricoh Co Ltd Strip crystal growing method
JPH05279189A (ja) * 1992-03-30 1993-10-26 Chichibu Cement Co Ltd ルチル単結晶の育成方法
JP4465481B2 (ja) * 2000-05-10 2010-05-19 並木精密宝石株式会社 単結晶材製造方法、シード基板、ダイおよび単結晶材製造装置
JP2003327495A (ja) * 2002-05-14 2003-11-19 Namiki Precision Jewel Co Ltd 晶癖面サファイヤ板材及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12467157B2 (en) 2022-05-25 2025-11-11 Luxium Solutions, Llc Enclosed crystal growth

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