JP6020166B2 - 発光素子材料および発光素子 - Google Patents
発光素子材料および発光素子 Download PDFInfo
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- JP6020166B2 JP6020166B2 JP2012527928A JP2012527928A JP6020166B2 JP 6020166 B2 JP6020166 B2 JP 6020166B2 JP 2012527928 A JP2012527928 A JP 2012527928A JP 2012527928 A JP2012527928 A JP 2012527928A JP 6020166 B2 JP6020166 B2 JP 6020166B2
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- 0 C*(C)c(cc1)ccc1-c1ccccc1 Chemical compound C*(C)c(cc1)ccc1-c1ccccc1 0.000 description 2
- BZNSYSRGDGIPBQ-UHFFFAOYSA-N Clc(cc1)ccc1-c1cc(-c(cc2)ccc2-c2ccccc2)c(cc2)c3c1ccc1cccc2c31 Chemical compound Clc(cc1)ccc1-c1cc(-c(cc2)ccc2-c2ccccc2)c(cc2)c3c1ccc1cccc2c31 BZNSYSRGDGIPBQ-UHFFFAOYSA-N 0.000 description 2
- KGBFYJAONLCNTB-UHFFFAOYSA-N CC(C)(C)c(cc1cc2)cc3c1c1c2c(Br)cc(-c(cc2)ccc2Cl)c1cc3 Chemical compound CC(C)(C)c(cc1cc2)cc3c1c1c2c(Br)cc(-c(cc2)ccc2Cl)c1cc3 KGBFYJAONLCNTB-UHFFFAOYSA-N 0.000 description 1
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Description
化合物[1]の合成
ピレン150g、t−ブチルクロリド75.52gおよびジクロロメタン742mlからなる混合溶液を、窒素気流下、0℃に冷やし、塩化アルミニウム98.9gを加えた。この混合溶液を室温で3時間撹拌した後、水1100mlを注入し、ジクロロメタン1100mlで抽出した。得られた有機層を水750mlで3回洗浄し、硫酸マグネシウムで乾燥した後、エバポレートした。得られた固体をメタノール洗浄により精製し、ろ過した。得られた固体を真空乾燥することにより、2−t−ブチルピレンを65重量%含有する褐色固体272gを得た。
1H−NMR(CDCl3)δ 7.40 (1H,t,J=3.8Hz)、7.48−7.56(2H、m)、7.65(2H,dd,J=1.6Hz,5.9Hz)、7.70−7.89(10H,m)、8.01−8.12(4H,m)、8.22(2H,d,J=9.7Hz)、8.28(2H,dd,J=10.8Hz,17.0Hz)、8.73(2H,dd,J=1.6Hz,6.5Hz)。
化合物[2]の合成
中間体(A)10.0g、3−(9−カルバゾリル)フェニルボロン酸7.1g、1,2−ジメトキシエタン111mLおよび1.5M炭酸ナトリウム水溶液33mLの混合溶液を窒素置換した後、ビス(トリフェニルホスフィン)パラジウムジクロリド157mgを加え、還流下で2時間加熱撹拌した。反応混合物を室温に冷却した後、トルエン100mLで抽出した。得られた有機層を水100mlで2回洗浄し、硫酸マグネシウムで乾燥した後、ろ過した。ろ液をエバポレートし、シリカゲルカラムクロマトグラフィーにより精製した。溶出液をエバポレートした後、得られた固体にメタノール100mlを加え、ろ過した。得られた固体を真空乾燥することにより、7−t−ブチル−1−(3−(9−カルバゾリルフェニル))−3−(4−クロロフェニル)ピレン11.5g(収率85%)を得た。
1H−NMR(CDCl3)δ7.30(2H,dt,J=0.84Hz,7.3Hz)、7.44(2H,dt,J=1.4Hz,7.0Hz)、7.55−7.64(4H,m)、7.68−7.93(8H,m)、8.04−8.26(9H,m)、8.35(1H,d,J=9.2Hz)、8.72(2H,dd,J=4.1Hz,1.6Hz)。
化合物[3]の合成
中間体(B)2.8g、1−ナフタレンボロン酸1.3g、リン酸三カリウム3.8gおよびトルエン30mlの混合溶液を窒素置換した後、ビス(ジベンジリデンアセトン)パラジウム172mgおよびトリ−t−ブチルホスフィン・テトラフルオロボレート208mgを加え、窒素気流下、還流下で4時間加熱攪拌した。反応混合物を室温に冷却した後、水30mlを加え、トルエン34mlで抽出した。得られた有機層を水30mlで2回洗浄し、硫酸マグネシウムで乾燥後、ろ過した。ろ液をエバポレートした後、得られた固体をシリカゲルカラムクロマトグラフィーにより精製した。溶出液をエバポレートした後、得られた固体をヘプタン27mlとトルエン27mlの混合液を用いて再結晶にて精製した。得られた固体を再度ヘプタン27mlとトルエン27mlの混合液を用いて再結晶にて精製し、真空乾燥することにより、黄色結晶1.8g(収率54%)を得た。
1H−NMR(CDCl3):7.41(1H,tt,J=7.6Hz,0.81Hz)、7.48−7.64(6H,m)、7.68−7.86(10H,m)、7.88−7.98(2H,m)、8.02−8.17(5H,m)、8.18−8.24(2H,m)、8.33(1H,d,J=9.2Hz)、8.40(1H,d,J=9.5Hz)。
ITO透明導電膜を165nm堆積させたガラス基板(ジオマテック(株)製、11Ω/□、スパッタ品)を38×46mmに切断した後、エッチングを行い、ITO透明導電膜を所定の電極形状に形成した。得られた基板を“セミコクリーン56”(商品名、フルウチ化学(株)製)を用いて15分間超音波洗浄してから、超純水で洗浄した。この基板を素子を作製する直前に1時間UV−オゾン処理し、真空蒸着装置内に設置して、装置内の真空度が5×10−4Pa以下になるまで排気した。ITO透明導電膜上に、抵抗加熱法によって、まず正孔注入層として、1,4,5,8,9,12−ヘキサアザトリフェニレンヘキサカルボニトリルを5nmの厚さ、正孔輸送層として、4,4’−ビス(N−(1−ナフチル)−N−フェニルアミノ)ビフェニルを60nmの厚さで、それぞれ蒸着した。次に、発光層として、ホスト材料である化合物(H−1)およびドーパント材料である化合物(D−1)を混合した層を、ドーパント濃度が5重量%になるようにして40nmの厚さに蒸着した。次に、電子輸送層として、化合物[1]とドナー性化合物であるフッ化リチウムを混合した層を、蒸着速度比1:1(0.05nm/s:0.05nm/s)で25nmの厚さに蒸着した。
電子輸送層として表1に記載した材料を用いた以外は、実施例1と同様にして発光素子を作製した。結果は表1に示した。なお、表1中、(2E−1)は下記に示す化合物である。
電子輸送層として表1に記載した材料を用いた以外は、実施例1と同様にして発光素子を作製した。結果は表1に示した。なお、表1中、(E−1)、(E−2)は下記に示す化合物である。
電子輸送層として、化合物[1]とドナー性化合物である(2E−1)を混合した層を、蒸着速度比1:1(0.05nm/s:0.05nm/s)で25nmの厚さに蒸着し、次に、(2E−1)を0.5nmの厚さに蒸着した後、陰極として、マグネシウムと銀の共蒸着膜を蒸着速度比がマグネシウム:銀=10:1(0.5nm/s:0.05nm/s)で15nmの厚さに蒸着した以外は実施例1と同様にして発光素子を作製した。
電子輸送層として表2、表3に記載した材料を用いた以外は、実施例10と同様にして発光素子を作製した。結果は表2、表3に示した。なお、表2中、化合物[4]〜化合物[51]は下記に示す化合物である。
電子輸送層として表3に記載した材料を用いた以外は、実施例10と同様にして発光素子を作製した。結果は表3に示した。なお、表3中、(E−3)、(E−4)は下記に示す化合物である。
ホスト材料、ドーパント材料および電子輸送層として表4に記載した材料を用いた以外は、実施例1と同様にして発光素子を作製した。結果は表4に示した。なお、表4中、(H−2)〜(H−8)、(D−2)〜(D−10)は下記に示す化合物である。
ホスト材料として化合物[1]、電子輸送層としてトリス(8−キノリノラート)アルミニウム(III)(Alq3)を用いた以外は、実施例1と同様にして発光素子を作製した。この発光素子を10mA/cm2で直流駆動したところ、駆動電圧4.8V、外部量子効率4.9%、輝度半減時間7900時間の低駆動電圧かつ高効率発光する耐久性に優れた青色発光素子が得られた。
ホスト材料として表5に記載した材料を用いた以外は、実施例72と同様にして発光素子を作製した。結果は表5に示した。
ホスト材料として表5に記載した材料を用いた以外は、実施例72と同様にして発光素子を作製した。結果は表5に示した。なお、表5中、(H−9)は下記に示す化合物である。
Claims (12)
- 下記一般式(1)で表される化合物を含有する発光素子材料:
- X1が2−ピリジル基であるとき、X2が2−ピリジル基以外の基から選ばれる請求項1記載の発光素子材料。
- X1およびX2のうち少なくとも1つがアリール基である請求項1または2記載の発光素子材料。
- X1およびX2のうち少なくとも1つがカルバゾリル基、ジベンゾフラニル基またはジベンゾチオフェニル基である請求項1または2記載の発光素子材料。
- L1およびL2が、単結合、フェニレン基、ビフェニレン基またはナフタレニレン基である請求項1〜4いずれか記載の発光素子材料。
- Ar1とAr2が異なる基である請求項1〜5のいずれか記載の発光素子材料。
- 陽極と陰極の間に有機層が存在し、電気エネルギーにより発光する発光素子であって、前記有機層に請求項1〜6のいずれか記載の発光素子材料を含有する発光素子。
- 前記有機層が電子輸送層を含み、電子輸送層が請求項1〜5のいずれか記載の発光素子材料を含む請求項7記載の発光素子。
- 前記電子輸送層がさらにドナー性化合物を含む請求項8記載の発光素子。
- ドナー性化合物がアルカリ金属、アルカリ金属を含有する無機塩、アルカリ金属と有機物との錯体、アルカリ土類金属、アルカリ土類金属を含有する無機塩またはアルカリ土類金属と有機物との錯体である請求項9記載の発光素子。
- ドナー性化合物がアルカリ金属と有機物との錯体またはアルカリ土類金属と有機物との錯体である請求項10記載の発光素子。
- 前記有機層が発光層を含み、発光層が請求項1〜5のいずれか記載の発光素子材料を含む請求項7記載の発光素子。
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US9203037B2 (en) * | 2010-06-18 | 2015-12-01 | Basf Se | Organic electronic devices comprising a layer of a dibenzofurane compound and a 8-hydroxypquinolinolato earth alkaline metal, or alkali metal complex |
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