JP6016611B2 - Semiconductor module, manufacturing method thereof and connection method thereof - Google Patents

Semiconductor module, manufacturing method thereof and connection method thereof Download PDF

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JP6016611B2
JP6016611B2 JP2012278126A JP2012278126A JP6016611B2 JP 6016611 B2 JP6016611 B2 JP 6016611B2 JP 2012278126 A JP2012278126 A JP 2012278126A JP 2012278126 A JP2012278126 A JP 2012278126A JP 6016611 B2 JP6016611 B2 JP 6016611B2
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circuit pattern
semiconductor module
semiconductor element
external connection
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JP2014123618A (en
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晶子 後藤
晶子 後藤
岡　誠次
誠次 岡
吉田　博
博 吉田
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Mitsubishi Electric Corp
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Description

本発明は半導体モジュール、その製造方法およびその接続方法に関し、例えば、電力用途の半導体モジュールに関する。   The present invention relates to a semiconductor module, a manufacturing method thereof, and a connection method thereof, for example, a semiconductor module for power use.

トランスファーモールド法により樹脂封止された樹脂封止型電力用半導体モジュールとして、金属放熱体の上に設けられた絶縁層および回路パターン上にＩＧＢＴ等の電力用半導体素子を配置し、外部接続用の主端子と制御端子とを回路パターン面に略垂直に配設したものが一般的に知られている（例えば特許文献１参照）。   As a resin-sealed power semiconductor module resin-sealed by a transfer mold method, a power semiconductor element such as an IGBT is arranged on an insulating layer and a circuit pattern provided on a metal radiator, and is used for external connection. A device in which a main terminal and a control terminal are arranged substantially perpendicular to a circuit pattern surface is generally known (see, for example, Patent Document 1).

特許文献２には、主端子あるいは制御端子を、内側にネジが切られた円筒形状とした半導体モジュールが記載されている。この円筒にボルトを取り付けることによって、主端子あるいは制御端子と外部配線との接続を行う。また、主端子あるいは制御端子にメスコネクタを設けて、外部配線との接続を行う半導体モジュールも記載されている。   Patent Document 2 describes a semiconductor module in which a main terminal or a control terminal has a cylindrical shape with a screw cut inside. By attaching a bolt to the cylinder, the main terminal or the control terminal is connected to the external wiring. A semiconductor module is also described in which a female connector is provided on the main terminal or the control terminal to connect to external wiring.

特許文献３に記載の電力用半導体モジュールにおいては、半導体モジュールの主端子あるいは制御端子は、封止樹脂の表面に露出した筒形状の金属端子であり、コンプライアントピン型の外部端子ピンを筒形状の金属端子に圧入することにより、外部回路との導通を行う。   In the power semiconductor module described in Patent Document 3, the main terminal or the control terminal of the semiconductor module is a cylindrical metal terminal exposed on the surface of the sealing resin, and the external terminal pin of the compliant pin type is cylindrical. By press-fitting into the metal terminal, conduction with an external circuit is performed.

なお、一般に半導体モジュールにおいて、電力用半導体素子と主端子との間、電力用半導体素子と制御端子との間および電力用半導体素子間は、ボンディングワイヤにより電気的に接続されるか（例えば、特許文献２参照）、もしくは金属板により電気的に接続されている(例えば、特許文献３参照)。   In general, in a semiconductor module, between the power semiconductor element and the main terminal, between the power semiconductor element and the control terminal, and between the power semiconductor elements are electrically connected by bonding wires (for example, patents). It is electrically connected by a metal plate (see, for example, Patent Document 3).

電力用半導体モジュールの内部配線にボンディングワイヤを用いる場合は、電力用半導体素子周辺に、ワイヤボンディング装置がボンディングを行うためのスペースを設ける必要がある。従って、電力用半導体モジュールの小型化が制限される問題があった。また、ワイヤボンディング装置を用いる際には、ボンディングヘッド部の各機構が、主端子あるいは制御端子に干渉しないようにスペースを確保する必要があるため、主端子あるいは制御端子近傍にワイヤボンディングする場合に、電力用半導体モジュールを構成する各部品以外の周辺にもスペースが必要となり、これも、電力用半導体モジュールの小型化が制限される要因であった。上述した問題は、ボンディングワイヤの代わりに金属板を用いて接続を行うことにより解決可能である。   When a bonding wire is used for the internal wiring of the power semiconductor module, it is necessary to provide a space for the wire bonding apparatus to perform bonding around the power semiconductor element. Therefore, there is a problem that miniaturization of the power semiconductor module is limited. Also, when using a wire bonding device, it is necessary to secure a space so that each mechanism of the bonding head does not interfere with the main terminal or the control terminal. In addition, a space is required around the parts other than the components constituting the power semiconductor module, which is also a factor that limits the miniaturization of the power semiconductor module. The above-described problem can be solved by making a connection using a metal plate instead of the bonding wire.

特開２００１−２８４５２４号公報JP 2001-284524 A 特開２００７−１８４３１５号公報JP 2007-184315 A 特開２０１０−１２９５５０号公報JP 2010-129550 A

特許文献２に記載の半導体モジュールは、外部配線を接続する場合、筒状の内側にねじ穴を設けたり、ナットを樹脂モールドしたり、あるいはメスコネクタを用いる必要があり、筒状にねじ部やコネクタ部を設ける必要があり、その分筒状の端子が長くなり、電力用半導体モジュールの薄型化が制限される問題や、配線の引回しが長くなることにより電気抵抗が増加し、モジュールの電気特性が劣化する問題があった。また、外部配線との接続にねじやピンを用いるものは、接続部分で電気抵抗が増加し、モジュールの電気特性劣化となる。はんだ接続するものは、接続部上方に外部基板があり、はんだ付け部が隠れて作業性が悪く、接合後の検査も行いにくい問題があった。   In the semiconductor module described in Patent Document 2, when connecting external wiring, it is necessary to provide a screw hole on the inner side of the cylinder, to resin-mold a nut, or to use a female connector. It is necessary to provide a connector part, and the length of the cylindrical terminal becomes longer, which limits the reduction in the thickness of the power semiconductor module, and increases the electrical resistance due to the longer routing of the wiring. There was a problem that the characteristics deteriorated. In addition, when a screw or pin is used for connection with the external wiring, the electrical resistance increases at the connection portion, resulting in deterioration of the electrical characteristics of the module. For the solder connection, there is an external substrate above the connection part, the soldering part is hidden, the workability is poor, and there is a problem that the inspection after joining is difficult to perform.

特許文献１に記載の電力用半導体モジュールは、外部接続端子の先端部が凸形状に封止樹脂から露出しているため、トランスファーモールドの上金型を、この凸形状に合わせた凹形状にする必要があり、上金型の加工コストがかかる問題がある。また、製品によって外部接続端子の位置が異なる場合、製品の種類ごとにトランスファーモールドの上金型を用意しなければならず、費用を要するといった問題があった。   In the power semiconductor module described in Patent Document 1, since the tip of the external connection terminal is exposed from the sealing resin in a convex shape, the upper mold of the transfer mold has a concave shape that matches this convex shape. Therefore, there is a problem that the processing cost of the upper mold is high. In addition, when the position of the external connection terminal differs depending on the product, it is necessary to prepare an upper mold for the transfer mold for each type of product, resulting in a problem that costs are required.

本発明は以上のような課題を解決するためになされたものであり、小型でかつインダクタンスを低減した半導体モジュールの提供を目的とする。   The present invention has been made to solve the above-described problems, and an object thereof is to provide a small-sized semiconductor module with reduced inductance.

また、本発明は、外部との接続時にインダクタンスを低減する半導体モジュールの接続方法の提供を目的とする。   Another object of the present invention is to provide a semiconductor module connection method that reduces inductance when connected to the outside.

また、本発明は、小型でかつインダクタンスを低減した半導体モジュールを低コストで製造可能な、半導体モジュールの製造方法の提供を目的とする。   Another object of the present invention is to provide a semiconductor module manufacturing method that can manufacture a small-sized semiconductor module with reduced inductance at low cost.

本発明に係る半導体モジュールは、基板の一方主面に設けられた回路パターンと、回路パターン上に接合された半導体素子と、回路パターンと半導体素子との間、および／又は半導体素子間を接合する金属板と、を備え、基板、回路パターン、半導体素子および金属板は樹脂により封止されており、樹脂には、穴が形成されており、回路パターン、半導体素子、又は金属板の一部が、平面視で穴から露出していて、穴の内壁面は、可撓性の緩衝材で覆われていて、緩衝材はシリコーンゴムである。
A semiconductor module according to the present invention joins a circuit pattern provided on one main surface of a substrate, a semiconductor element joined on the circuit pattern, a circuit pattern and a semiconductor element, and / or a semiconductor element. A substrate, a circuit pattern, a semiconductor element, and a metal plate are sealed with a resin, and a hole is formed in the resin, and a part of the circuit pattern, the semiconductor element, or the metal plate The hole is exposed from the hole in plan view, and the inner wall surface of the hole is covered with a flexible cushioning material, and the cushioning material is silicone rubber.

また、本発明に係る半導体モジュールの接続方法は、樹脂に設けられた穴から露出している回路パターン、半導体素子、又は金属板に外部接続端子の先端を接触させることにより、外部と電気的に接続することを特徴とする。   The semiconductor module connection method according to the present invention is electrically connected to the outside by bringing the tip of the external connection terminal into contact with a circuit pattern, a semiconductor element, or a metal plate exposed from a hole provided in the resin. It is characterized by connecting.

また、本発明に係る半導体モジュールの製造方法は、基板の一方主面に回路パターンを形成する工程（ａ）と、回路パターン上に半導体素子を接合する工程（ｂ）と、回路パターンと半導体素子との間、および／又は半導体素子間に金属板を接合する工程（ｃ）と、工程（ｃ）の後に、可撓性を有する筒状の緩衝材を、平面視で筒状の筒穴部分から、回路パターン、半導体素子、又は金属板が露出し、かつ露出面と緩衝材が隙間なく接するように配置する工程（ｄ）と、工程（ｄ）の後に、トランスファーモールド法により、緩衝材の筒状の筒穴部分の内側を除いて、基板、回路パターン、半導体素子、金属板および緩衝材を樹脂封止する工程（ｅ）とを備え、緩衝材はシリコーンゴムである。
In addition, the method for manufacturing a semiconductor module according to the present invention includes a step (a) of forming a circuit pattern on one main surface of a substrate, a step (b) of bonding a semiconductor element on the circuit pattern, a circuit pattern and a semiconductor element. And / or after the step (c) of joining the metal plate between the semiconductor elements and the step (c), the cylindrical cushioning material having flexibility is formed into a cylindrical cylindrical hole portion in a plan view. From the step (d), in which the circuit pattern, the semiconductor element, or the metal plate is exposed and the exposed surface and the buffer material are in contact with no gap, and after the step (d), the transfer material is used to transfer the buffer material. A step (e) of resin-sealing a substrate, a circuit pattern, a semiconductor element, a metal plate, and a buffer material except for the inside of the cylindrical tube hole portion, and the buffer material is silicone rubber .

本発明に係る半導体モジュールによれば、半導体モジュールと外部との電気的接続を行う際に、樹脂に形成された穴に外部接続端子を挿入して、穴から露出している回路パターン、半導体素子、又は金属板との接触による電気的接続を行うことが可能となる。よって、外部接続端子と半導体モジュールの露出部分とが直接接触するため、接続時のインダクタンスを低減して、電気的特性を良好に保つことが可能である。さらに、外部との電気的接続を行うために、半導体モジュール側に金属端子等を設ける必要がないため、半導体モジュールを構成する部品点数の削減が可能であり、それに伴い、半導体モジュールの製造コスト削減、小型化および軽量化が可能となる。   According to the semiconductor module of the present invention, when electrical connection between the semiconductor module and the outside is performed, the external connection terminal is inserted into the hole formed in the resin, and the circuit pattern and the semiconductor element exposed from the hole Alternatively, electrical connection by contact with a metal plate can be performed. Therefore, since the external connection terminal and the exposed portion of the semiconductor module are in direct contact with each other, it is possible to reduce the inductance at the time of connection and maintain good electrical characteristics. Furthermore, since it is not necessary to provide a metal terminal or the like on the semiconductor module side in order to make an electrical connection with the outside, it is possible to reduce the number of parts constituting the semiconductor module, and accordingly reduce the manufacturing cost of the semiconductor module. It is possible to reduce the size and weight.

また、本発明に係る半導体モジュールの接続方法によれば、穴６ａから露出している回路パターン１ｃ、半導体素子３、又は金属板５に外部接続端子８の先端を接触させるだけで、外部と電気的に接続することが可能であるため、例えば、ねじ止めなどを必要とする接続方法と比較して、容易に電気的接続を行うことが可能である。また、穴６ａの露出部分と外部接続端子８が直接接触することで電気的接続を行うため、金属端子等を介して接続を行う場合と比較して、よりインダクタンスを低減することが可能である。よって、外部との接続時に、電気的特性を良好に保つことが可能である。   Further, according to the method for connecting a semiconductor module according to the present invention, the external connection terminal 8 can be electrically connected to the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a only by contacting the tip of the external connection terminal 8. Therefore, electrical connection can be easily performed as compared with a connection method that requires screwing or the like. In addition, since the electrical connection is made by direct contact between the exposed portion of the hole 6a and the external connection terminal 8, it is possible to further reduce the inductance compared to the case where the connection is made through a metal terminal or the like. . Therefore, it is possible to maintain good electrical characteristics when connected to the outside.

また、本発明に係る半導体モジュールの製造方法によれば、樹脂に設けられる穴に対応する部分に筒状の緩衝材を配置してから、トランスファーモールド法による樹脂封止を行うことで、緩衝材の筒状の筒穴部分は樹脂封止されないため、穴を形成することが可能である。また、緩衝材を配置することによって穴を形成するため、トランスファーモールド法により樹脂封止する際に、上金型の内面の上面は平坦でよい。よって、穴の配置が異なる場合であっても、上金型を共用することができるため、製造コストを削減することが可能である。さらに、製造後に、筒状の緩衝材が穴に埋め込まれた状態で樹脂に留まる。よって、穴に外部接続端子を挿入した際に、穴にかかる外力が緩衝材により吸収される。よって、外部接続端子による外力から、半導体モジュールを保護することが可能である。また、樹脂封止後に、樹脂から緩衝材を取り除く必要が無いため、生産効率が向上する。   Further, according to the method for manufacturing a semiconductor module according to the present invention, the cylindrical cushioning material is disposed in a portion corresponding to the hole provided in the resin, and then the resin sealing is performed by the transfer molding method. Since the cylindrical cylindrical hole portion is not sealed with resin, it is possible to form a hole. Further, since the hole is formed by arranging the buffer material, the upper surface of the inner surface of the upper mold may be flat when resin sealing is performed by the transfer molding method. Therefore, even if the arrangement of the holes is different, the upper mold can be shared, so that the manufacturing cost can be reduced. Furthermore, after manufacturing, the cylindrical cushioning material remains in the resin in a state of being embedded in the hole. Therefore, when the external connection terminal is inserted into the hole, the external force applied to the hole is absorbed by the cushioning material. Therefore, it is possible to protect the semiconductor module from external force due to the external connection terminal. Moreover, since it is not necessary to remove the buffer material from the resin after the resin sealing, the production efficiency is improved.

実施の形態１に係る半導体モジュールの断面図である。1 is a cross-sectional view of a semiconductor module according to a first embodiment. 実施の形態１に係る半導体モジュールと外部接続端子との接続方法を説明する図である。6 is a diagram for explaining a connection method between the semiconductor module and the external connection terminals according to Embodiment 1. FIG. 弾性を有する外部接続端子の構造を示す図である。It is a figure which shows the structure of the external connection terminal which has elasticity. 先端に針状の突起を備える外部接続端子の構造を示す図である。It is a figure which shows the structure of the external connection terminal provided with the needle-shaped protrusion at the front-end | tip. 実施の形態２に係る半導体モジュールの断面図である。FIG. 4 is a cross-sectional view of a semiconductor module according to a second embodiment. 実施の形態２に係る半導体モジュールに備わる緩衝材を示す図である。FIG. 6 is a diagram illustrating a buffer material provided in a semiconductor module according to a second embodiment. 実施の形態２に係る半導体モジュールの製造方法を説明する図である。FIG. 10 is a diagram for explaining the method for manufacturing a semiconductor module according to the second embodiment. 実施の形態３に係る半導体モジュールの断面図および平面図である。FIG. 6 is a cross-sectional view and a plan view of a semiconductor module according to a third embodiment.

＜実施の形態１＞
＜構成＞
図１に、本実施の形態における半導体モジュールの断面図を示す。本実施の形態における半導体モジュールは、例えば電力用途の半導体モジュールである。 <Embodiment 1>
<Configuration>
FIG. 1 shows a cross-sectional view of the semiconductor module in the present embodiment. The semiconductor module in the present embodiment is a semiconductor module for power use, for example.

基板１は、半導体モジュールで生じる熱を放熱する金属放熱体である金属ベース板１ａと、金属ベース板１ａの上面に設けられた高熱伝導絶縁層である絶縁層１ｂから構成される。絶縁層１ｂ上面には、金属の回路パターン１ｃが設けられる。   The substrate 1 includes a metal base plate 1a that is a metal radiator that dissipates heat generated in the semiconductor module, and an insulating layer 1b that is a high thermal conductive insulating layer provided on the upper surface of the metal base plate 1a. A metal circuit pattern 1c is provided on the upper surface of the insulating layer 1b.

回路パターン１ｃには、半導体素子３がはんだ２等を介して接合される。半導体素子３は電力用半導体素子であり、例えばＩＧＢＴチップとＦＷＤ（Ｆｒｅｅ Ｗｈｅｅｌｉｎｇ Ｄｉｏｄｅ）チップである。本実施の形態において、半導体素子３はＳｉＣ半導体素子などのワイドバンドギャップ半導体素子であるとする。   The semiconductor element 3 is joined to the circuit pattern 1c via the solder 2 or the like. The semiconductor element 3 is a power semiconductor element, for example, an IGBT chip and an FWD (Free Wheeling Diode) chip. In the present embodiment, it is assumed that the semiconductor element 3 is a wide band gap semiconductor element such as a SiC semiconductor element.

半導体素子３間および半導体素子３と回路パターン１ｃとの間は、配線用の金属板５により接続される。金属板５は、電気抵抗が低く、曲げ加工性に優れる、銅系またはアルミニウム系の金属が用いられる。なお、後述する外部接続端子８から受ける外力を考慮して、回路パターン１ｃ、金属板５および半導体素子３上面の電極は、高い弾性を有する材料で形成されるのが好ましい。これは、例えば、銅系やアルミニウム系の金属材料である。   The wiring between the semiconductor elements 3 and between the semiconductor elements 3 and the circuit pattern 1c are connected by a metal plate 5 for wiring. The metal plate 5 is made of a copper-based or aluminum-based metal having a low electric resistance and excellent bending workability. In consideration of an external force received from an external connection terminal 8 to be described later, the circuit pattern 1c, the metal plate 5, and the electrodes on the upper surface of the semiconductor element 3 are preferably formed of a material having high elasticity. This is, for example, a copper-based or aluminum-based metal material.

基板１、半導体素子３および金属板５は樹脂６により封止されている。なお、樹脂６には複数の穴６ａが設けられており、回路パターン１ｃ、半導体素子３又は金属板５の一部が、穴６ａから平面視で露出している。なお、基板１の下面は、樹脂６により覆われず、放熱のために露出している。   The substrate 1, the semiconductor element 3 and the metal plate 5 are sealed with a resin 6. The resin 6 is provided with a plurality of holes 6a, and a part of the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 is exposed from the hole 6a in a plan view. Note that the lower surface of the substrate 1 is not covered with the resin 6 and is exposed for heat dissipation.

なお、樹脂６に形成された穴６ａは、樹脂６を貫通していればよく、後述する外部接続端子８（図２）との接触を行い易い形状であればよい。穴６ａの形状として、例えば、四角柱形状、円柱形状、下方に向かって細くなる形状等が可能である。ただし、穴６ａに外部接続端子８を挿入する際、穴６ａの内壁面の樹脂６および穴６ａの露出部分（即ち穴６ａから平面視で露出している回路パターン１ｃ、半導体素子３又は金属板５）が外部接続端子８により外力を受けるため、穴６ａ近傍に位置する半導体素子３、金属板５および回路パターン１ｃに応力が生じる。この応力による半導体モジュールの電気的特性の変動等が懸念される。よって、穴６ａの形状は、外部接続端子８から受ける外力が分散されやすい円柱状が望ましい。また、穴６ａを円柱状の形状とすることにより、外部接続端子８の形状が穴６ａの形状により制約を受けることを抑制することが可能である。さらに、外部接続端子８を挿入する際の作業効率の向上が期待できる。   In addition, the hole 6a formed in the resin 6 should just penetrate the resin 6, and should just be a shape which can be easily contacted with the external connection terminal 8 (FIG. 2) mentioned later. As the shape of the hole 6a, for example, a quadrangular prism shape, a cylindrical shape, a shape that narrows downward, and the like are possible. However, when the external connection terminal 8 is inserted into the hole 6a, the resin 6 on the inner wall surface of the hole 6a and the exposed portion of the hole 6a (that is, the circuit pattern 1c exposed from the hole 6a in plan view, the semiconductor element 3 or the metal plate) 5) receives external force from the external connection terminal 8, and stress is generated in the semiconductor element 3, the metal plate 5, and the circuit pattern 1c located in the vicinity of the hole 6a. There are concerns about fluctuations in the electrical characteristics of the semiconductor module due to this stress. Therefore, the shape of the hole 6a is preferably a cylindrical shape in which the external force received from the external connection terminal 8 is easily dispersed. Moreover, it is possible to suppress that the shape of the external connection terminal 8 receives restrictions by the shape of the hole 6a by making the hole 6a cylindrical shape. Furthermore, improvement in work efficiency when inserting the external connection terminal 8 can be expected.

なお、本実施の形態における半導体モジュールにおいて、前述した様に、回路パターン１ｃ、金属板５および半導体素子３上面の電極に弾性の高い金属を使用する。これにより、外部接続端子８が穴６ａの露出部分と接触した際に、外部接続端子８の外力により半導体モジュールに生じる応力を抑制して、半導体モジュールを保護することができる。   In the semiconductor module according to the present embodiment, as described above, a highly elastic metal is used for the circuit pattern 1c, the metal plate 5, and the electrodes on the upper surface of the semiconductor element 3. Thereby, when the external connection terminal 8 contacts the exposed portion of the hole 6a, the stress generated in the semiconductor module due to the external force of the external connection terminal 8 can be suppressed, and the semiconductor module can be protected.

＜外部接続端子との接続方法＞
図２を用いて、本実施の形態における半導体モジュールの外部との接続方法について説明する。半導体モジュール表面の穴６ａのそれぞれに外部接続端子８が挿入される。すると、穴６ａから露出している回路パターン１ｃ、半導体素子３もしくは金属板５と、穴６ａに挿入された外部接続端子８の先端とが接触する。この接触により半導体モジュールが、外部接続端子８を介して外部の例えば客先基板と電気的に接続される。 <Connection method with external connection terminal>
A method for connecting the semiconductor module to the outside in this embodiment will be described with reference to FIG. The external connection terminals 8 are inserted into the holes 6a on the surface of the semiconductor module. Then, the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a and the tip of the external connection terminal 8 inserted into the hole 6a come into contact. By this contact, the semiconductor module is electrically connected to an external customer board, for example, via the external connection terminal 8.

図３（ａ）〜（ｅ）に、外部接続端子８の具体例を示す。図３（ａ）〜（ｃ）の外部接続端子８は、バネ構造により上下方向に弾性を有する。また、図３（ｄ）、（ｅ）の外部接続端子８は、それぞれＳ字形状、板バネ構造により上下方向に弾性を有し、上下方向の変形に伴って左右方向にも形状が変形する。   Specific examples of the external connection terminals 8 are shown in FIGS. The external connection terminals 8 shown in FIGS. 3A to 3C have elasticity in the vertical direction due to the spring structure. Further, the external connection terminals 8 in FIGS. 3D and 3E are elastic in the vertical direction by the S-shape and the leaf spring structure, respectively, and the shape is also deformed in the left-right direction in accordance with the vertical deformation. .

このように、上下方向に弾性を有する外部接続端子８を樹脂６の穴６ａに挿入し、回路パターン１ｃ、半導体素子３、又は金属板５に外部接続端子８の先端を押圧することにより接触して、図示しない外部の客先基板等と電気的に接続を行う。   In this manner, the external connection terminal 8 having elasticity in the vertical direction is inserted into the hole 6a of the resin 6, and the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 is pressed by pressing the tip of the external connection terminal 8. Then, it is electrically connected to an external customer board (not shown).

樹脂６の穴６ａに外部接続端子８を挿入する際、穴６ａの内壁面の樹脂６および穴６ａの露出部分に外力がかかり、穴６ａ近傍に位置する半導体素子３、金属板５、回路パターン１ｃに応力が生じる。この応力による半導体モジュールの電気的特性の変動等が懸念される。そこで、本実施の形態では、外部接続端子８を図３に示す様な、弾性の高い構造とすることで、前述した外力が緩和されるため、半導体モジュールの電気的特性の変動等を抑制することができる。   When the external connection terminal 8 is inserted into the hole 6a of the resin 6, an external force is applied to the resin 6 on the inner wall surface of the hole 6a and the exposed portion of the hole 6a, and the semiconductor element 3, the metal plate 5, and the circuit pattern located near the hole 6a. Stress occurs in 1c. There are concerns about fluctuations in the electrical characteristics of the semiconductor module due to this stress. Therefore, in the present embodiment, the external connection terminal 8 is made of a highly elastic structure as shown in FIG. 3, so that the aforementioned external force is alleviated, so that fluctuations in electrical characteristics of the semiconductor module are suppressed. be able to.

また、外部との電気的な接続状態を解除するには、外部接続端子８を、穴６ａの露出部分から離間させれば良く、何度押圧を行っても外部接続端子８が変形せずもとの形状に戻る。よって、例えば、半導体モジュールの電気的特性を検査する際に、外部の検査装置との接続、接続解除を繰り返し行うときなどに便利である。   Further, in order to release the electrical connection state with the outside, the external connection terminal 8 may be separated from the exposed portion of the hole 6a, and the external connection terminal 8 does not deform even if it is pressed many times. Return to the shape. Therefore, for example, when inspecting the electrical characteristics of the semiconductor module, it is convenient when repeatedly connecting and disconnecting with an external inspection device.

なお、図３（ｄ）および（ｅ）に示すように、上下方向の弾性変形に伴って左右方向即ち基板１の面方向にも変形する様な構造の外部接続端子８を用いてもよい。この場合、穴６ａの形状により外部接続端子８の基板１の面方向への変形量が規定できるため、押圧によって外部接続端子８に過度の変形が起こり元の形状に戻らなくなることを防止することができる。   As shown in FIGS. 3D and 3E, an external connection terminal 8 having a structure that deforms in the left-right direction, that is, the surface direction of the substrate 1 in accordance with the elastic deformation in the vertical direction may be used. In this case, since the deformation amount of the external connection terminal 8 in the surface direction of the substrate 1 can be defined by the shape of the hole 6a, it is possible to prevent the external connection terminal 8 from being excessively deformed and not returning to the original shape due to the pressing. Can do.

また、図３（ｂ）〜（ｅ）の様に、少なくとも一方の先端が先細りとなった外部接続端子８を用いてもよい。外部接続端子８の先端に圧力が集中することで、外部接続端子８は安定したばね性を発揮できるため、より安定的な電気的接続を行うことが可能となる。   Further, as shown in FIGS. 3B to 3E, an external connection terminal 8 having at least one tip tapered may be used. Since the pressure concentrates on the tip of the external connection terminal 8, the external connection terminal 8 can exhibit a stable spring property, so that a more stable electrical connection can be performed.

また、本実施の形態における外部接続端子８の別の例として、図４（ａ）〜（ｅ）に示す様に、少なくとも一方の先端に針状の突起８ａを設けた外部接続端子８を用いてもよい。この針状の突起８ａを穴６ａの露出面に突き刺すことで、図示しない外部（客先基板）と電気的に接続を行う。針状の突起８ａを穴６ａの露出面に突き刺すことにより、金属表面の酸化膜や皮膜を貫通して金属真性面と接触するため、電気的に抵抗が低く安定した接続状態が得られる。   Further, as another example of the external connection terminal 8 in the present embodiment, as shown in FIGS. 4A to 4E, an external connection terminal 8 provided with a needle-like protrusion 8a at at least one tip is used. May be. The needle-like protrusion 8a is pierced into the exposed surface of the hole 6a, thereby electrically connecting to the outside (customer substrate) (not shown). By piercing the needle-like protrusion 8a into the exposed surface of the hole 6a, the metal surface penetrates through the oxide film or film on the metal surface, so that a stable connection state with low electrical resistance is obtained.

図４（ａ）または（ｄ）のように、外部接続端子８に備わる針状の突起８ａが１本の場合、穴６ａの露出部分との接触は点での接触となるため電流容量が小さくなる。より大きな電流容量が必要な場合には、図４（ｂ）または（ｃ）のように、針状の突起８ａを複数備える外部接続端子８を用いればよい。   As shown in FIG. 4 (a) or (d), when the needle-like protrusion 8a provided on the external connection terminal 8 is one, the contact with the exposed portion of the hole 6a is a point contact, so the current capacity is small. Become. When a larger current capacity is required, an external connection terminal 8 having a plurality of needle-like protrusions 8a may be used as shown in FIG. 4 (b) or (c).

また、図４（ｅ）に示す様に、バネ構造を有する外部接続端子８のバネの先端に針状の突起８ａを設けた場合は、外部接続端子８を回転させながら穴６ａに挿入すると良い。こうすることで、外部接続端子８の先端の針状の突起８ａが、穴６ａの露出面の表面酸化物や皮膜を円弧状に削るため、金属真性面との接触が可能となる。   Further, as shown in FIG. 4E, when the needle-like protrusion 8a is provided at the tip of the spring of the external connection terminal 8 having a spring structure, the external connection terminal 8 may be inserted into the hole 6a while rotating. . By doing so, the needle-like protrusion 8a at the tip of the external connection terminal 8 cuts the surface oxide or film on the exposed surface of the hole 6a into an arc shape, so that contact with the metal intrinsic surface is possible.

＜製造方法＞
まず、金属ベース板１ａ上に絶縁層１ｂを形成することにより基板１を形成する。そして、基板１の絶縁層１ｂ上に金属の回路パターン１ｃを形成する。次に、基板１上の回路パターン１ｃ表面に、半導体素子３を、例えばはんだ２により接合する。図１に示す様に、半導体素子３は複数個でもよく、例えば、ＩＧＢＴチップやＦＷＤチップなどである。次に、半導体素子３間および半導体素子３と回路パターン１ｃとの間を接続する金属板５をはんだ接合する。 <Manufacturing method>
First, the substrate 1 is formed by forming the insulating layer 1b on the metal base plate 1a. Then, a metal circuit pattern 1 c is formed on the insulating layer 1 b of the substrate 1. Next, the semiconductor element 3 is joined to the surface of the circuit pattern 1 c on the substrate 1 by, for example, solder 2. As shown in FIG. 1, a plurality of semiconductor elements 3 may be used, for example, an IGBT chip or an FWD chip. Next, the metal plate 5 that connects between the semiconductor elements 3 and between the semiconductor element 3 and the circuit pattern 1c is soldered.

次に、トランスファーモールド法により樹脂封止を行う。まず、下金型に前工程までで組み立てた半導体モジュールを配置する。次に、下金型の上に上金型を配置する。上金型の内面の上面には、穴６ａの位置、形状に対応したピンが固定されている。下金型と上金型を密着させた状態で、金型内部に樹脂６を注入する。樹脂６が硬化した後、下金型および上金型を取り外して、本実施の形態における半導体モジュールを得る。なお、前述したピンは上金型に固定されているため、上金型を取り外した際に、同時に樹脂６から取り除かれる。   Next, resin sealing is performed by a transfer mold method. First, the semiconductor module assembled up to the previous process is placed in the lower mold. Next, the upper mold is placed on the lower mold. A pin corresponding to the position and shape of the hole 6a is fixed to the upper surface of the inner surface of the upper mold. The resin 6 is poured into the mold while the lower mold and the upper mold are in close contact with each other. After the resin 6 is cured, the lower mold and the upper mold are removed to obtain the semiconductor module in the present embodiment. In addition, since the pin mentioned above is being fixed to the upper metal mold | die, when removing an upper metal mold | die, it removes from the resin 6 simultaneously.

なお、穴６ａの別の形成方法として、ピンの代わりに、可撓性を有する部材を配置しても良い。つまり、可撓性を有する部材を半導体モジュール表面と上金型の間に略垂直に配置してから、トランスファーモールド法により樹脂封止することで、任意の部分への樹脂の侵入を防ぐことが可能である。樹脂封止後に可撓性を有する部材を取り除くことで、穴６ａを得ることが可能である。可撓性を有する部材としては、例えば、シリコーンゴムを用いる。シリコーンゴムは熱により膨張するため、樹脂注入時に膨張して半導体モジュール表面および上金型に密着する。この密着により、穴６ａが形成される部分への樹脂６の侵入をより確実に防止して、穴６ａを確実に形成することが可能である。さらに、樹脂封止後は、シリコーンゴムは冷却により収縮するため、樹脂６から取り除き易くなる。   As another method of forming the hole 6a, a flexible member may be arranged instead of the pin. In other words, by placing a flexible member approximately vertically between the semiconductor module surface and the upper mold, and then resin-sealing by the transfer molding method, it is possible to prevent the resin from entering any part. Is possible. The hole 6a can be obtained by removing the flexible member after resin sealing. For example, silicone rubber is used as the flexible member. Since the silicone rubber expands due to heat, it expands when the resin is injected and adheres to the surface of the semiconductor module and the upper mold. By this close contact, it is possible to more reliably prevent the resin 6 from entering the portion where the hole 6a is formed, and to reliably form the hole 6a. Furthermore, after the resin is sealed, the silicone rubber shrinks by cooling, so that it can be easily removed from the resin 6.

また、穴６ａを複数形成する場合には、複数の可撓性を有する部材を、予め板状の部材で繋げて形成しておくことにより、複数の可撓性を有する部材を半導体モジュール上に一括して配置することが可能となる。よって、可撓性を有する部材を配置する際の位置精度が向上する。また、一括して配置可能となることにより生産性が向上する。なお、可撓性を有する部材および板状の部材は樹脂封止工程後に半導体モジュールから取り除く必要があるため、板状の部材は、その全体が上金型の内面の上面に接するように配置される。   In addition, when a plurality of holes 6a are formed, a plurality of flexible members are previously connected by a plate-like member to form the plurality of flexible members on the semiconductor module. It becomes possible to arrange in a lump. Therefore, the positional accuracy when arranging a member having flexibility is improved. Further, productivity can be improved by being able to arrange in a lump. In addition, since it is necessary to remove the flexible member and the plate-like member from the semiconductor module after the resin sealing step, the plate-like member is disposed so that the whole is in contact with the upper surface of the inner surface of the upper mold. The

なお、樹脂６の厚みは金属板５や半導体素子３の絶縁を確保できる最低の厚みでよい。樹脂６の厚みを小さくすることにより、穴６ａの深さが浅くなるため、外部接続端子８の長さを短くすることができる。外部接続端子８の長さが短くなることにより、接続による電気抵抗が減少するため好ましい。   The thickness of the resin 6 may be a minimum thickness that can ensure insulation of the metal plate 5 and the semiconductor element 3. By reducing the thickness of the resin 6, the depth of the hole 6a becomes shallow, so that the length of the external connection terminal 8 can be shortened. A reduction in the length of the external connection terminal 8 is preferable because the electrical resistance due to the connection is reduced.

なお、前述した可撓性を有する部材を用いて穴６ａを形成するには、樹脂６の厚み（即ち穴６ａの深さ）を十分に薄く設計する必要があるため、結果的に薄型の半導体モジュールが得られる。薄型化で配線長が短くなることで電気抵抗が下がり、モジュールの電気特性向上が期待できる。また、本実施の形態において、トランスファーモールド時に、モジュール上面から端子等が突出していないため、上金型に、端子等の突出に対応した凹形状を設ける必要がない。よって、上金型の内面の上面を平面状に形成できるため、上金型の製造コストを削減できる。また、上述した可撓性の部材を用いれば、品種の異なる半導体モジュールでも、上金型を共用することができ、半導体モジュールの製造コストを削減することができる。   In order to form the hole 6a using the flexible member described above, it is necessary to design the thickness of the resin 6 (that is, the depth of the hole 6a) to be sufficiently thin. A module is obtained. The electrical resistance is lowered and the electrical characteristics of the module can be improved by reducing the wiring length due to the reduction in thickness. In the present embodiment, since terminals and the like do not protrude from the upper surface of the module during transfer molding, it is not necessary to provide the upper mold with a concave shape corresponding to the protrusion of the terminals and the like. Therefore, since the upper surface of the inner surface of the upper mold can be formed in a flat shape, the manufacturing cost of the upper mold can be reduced. Moreover, if the flexible member mentioned above is used, even if it is a semiconductor module from which a kind differs, an upper metal mold can be shared and the manufacturing cost of a semiconductor module can be reduced.

なお、上述の様に、樹脂６の厚みを十分に薄く設計する必要があるのは、樹脂６を金型に注入する際に、可撓性を有する部材が樹脂注入により受ける圧力を低減するためである。可撓性を有する部材の高さ（即ち樹脂６の厚み）が高くなると、この部材が樹脂注入により受ける圧力も部材の表面積に応じて大きくなる。よって、樹脂注入時に、可撓性を有する部材のずれなどを防ぐために、樹脂６の厚みは、絶縁を確保できる範囲で、できる限り薄く設計するのが好ましい。   As described above, it is necessary to design the resin 6 to be sufficiently thin in order to reduce the pressure that the flexible member receives by the resin injection when the resin 6 is injected into the mold. It is. As the height of the flexible member (that is, the thickness of the resin 6) increases, the pressure that the member receives due to the resin injection also increases in accordance with the surface area of the member. Therefore, it is preferable to design the thickness of the resin 6 as thin as possible within a range in which insulation can be secured in order to prevent displacement of a flexible member at the time of resin injection.

＜効果＞
本実施の形態における半導体モジュールは、基板１の一方主面に設けられた回路パターン１ｃと、回路パターン１ｃ上に接合された半導体素子３と、回路パターン１ｃと半導体素子３との間、および／又は半導体素子３間を接合する金属板５とを備え、基板１、回路パターン１ｃ、半導体素子３および金属板５は樹脂６により封止されており、樹脂６には、穴６ａが形成されており、回路パターン１ｃ、半導体素子３、又は金属板５の一部が、平面視で穴６ａから露出していることを特徴とする。 <Effect>
The semiconductor module according to the present embodiment includes a circuit pattern 1c provided on one main surface of the substrate 1, a semiconductor element 3 bonded on the circuit pattern 1c, between the circuit pattern 1c and the semiconductor element 3, and / or Alternatively, the substrate 1, the circuit pattern 1 c, the semiconductor element 3, and the metal plate 5 are sealed with a resin 6, and a hole 6 a is formed in the resin 6. The circuit pattern 1c, the semiconductor element 3, or a part of the metal plate 5 is exposed from the hole 6a in plan view.

従って、半導体モジュールと外部との電気的接続を行う際に、樹脂６に形成された穴６ａに外部接続端子８を挿入して、穴６ａから露出している回路パターン１ｃ、半導体素子３、又は金属板５との接触による電気的接続を行うことが可能となる。よって、外部接続端子８と半導体モジュールの露出部分とが直接接触するため、接続時のインダクタンスを低減して、電気的特性を良好に保つことが可能である。さらに、外部との電気的接続のために半導体モジュール側に金属端子等を設ける必要がないため、半導体モジュールを構成する部品点数の削減が可能であり、それに伴い、半導体モジュールの製造コスト削減、小型化および軽量化が可能となる。   Accordingly, when the semiconductor module is electrically connected to the outside, the external connection terminal 8 is inserted into the hole 6a formed in the resin 6, and the circuit pattern 1c, the semiconductor element 3, or the semiconductor element 3 exposed from the hole 6a Electrical connection by contact with the metal plate 5 can be performed. Therefore, since the external connection terminal 8 and the exposed portion of the semiconductor module are in direct contact with each other, it is possible to reduce the inductance at the time of connection and to maintain good electrical characteristics. Furthermore, it is not necessary to provide a metal terminal or the like on the semiconductor module side for electrical connection with the outside, so the number of parts constituting the semiconductor module can be reduced, and accordingly, the manufacturing cost of the semiconductor module is reduced and the size is reduced. And weight reduction.

さらに、半導体モジュールの小型化および軽量化が可能となることにより、梱包や輸送コンテナ当たりの製品個数が増加し、１個当たりの輸送コストを低減することが可能となる。また、外部接続端子８との接続にはんだ等を用いないため、製品を回収・分解する際のコストを抑制することが可能である。また、前述した小型化、軽量化により、梱包材当たりの梱包可能な製品の個数が増え、また、製品１個当たりの包装材使用量が減るため、梱包および包装のコスト削減が可能となる。   Further, since the semiconductor module can be reduced in size and weight, the number of products per packing and transport container can be increased, and the transport cost per unit can be reduced. Further, since solder or the like is not used for connection to the external connection terminal 8, it is possible to reduce the cost when collecting and disassembling the product. Further, the reduction in size and weight described above increases the number of products that can be packaged per packaging material, and the amount of packaging material used per product decreases, so that packaging and packaging costs can be reduced.

また、本実施の形態における半導体モジュールにおいて、穴６ａから露出している回路パターン１ｃ、半導体素子３、又は金属板５は、弾性を有することを特徴とする。   Further, in the semiconductor module according to the present embodiment, the circuit pattern 1c, the semiconductor element 3, or the metal plate 5 exposed from the hole 6a has elasticity.

従って、穴６ａの露出部分が弾性を有することにより、穴６ａに挿入された外部接続端子８が露出面に接触したときに半導体モジュールが受ける外力を緩和して、半導体モジュールを保護することが可能である。   Therefore, since the exposed portion of the hole 6a has elasticity, the external force received by the semiconductor module when the external connection terminal 8 inserted into the hole 6a contacts the exposed surface can be relaxed to protect the semiconductor module. It is.

また、本実施の形態における半導体モジュールにおいて、半導体素子３は、ワイドバンドギャップ半導体素子であることを特徴とする。   In the semiconductor module according to the present embodiment, the semiconductor element 3 is a wide band gap semiconductor element.

本実施の形態における半導体モジュールは、穴６ａの露出面と外部接続端子８が直接接触して電気的接続を行うため、インダクタンスを低減することが可能であるため、半導体モジュール動作時のサージ電圧を抑制可能である。よって、半導体素子３をＳｉＣ半導体素子等のワイドバンドギャップ半導体素子とすることにより、高速動作が可能となる。また、本実施の形態における半導体モジュールは、穴６ａの露出面と外部接続端子との電気的接続にはんだやシリコーン系ゲルを用いないため、動作温度の制約が緩和される。よって、半導体素子３をＳｉＣ半導体素子等のワイドバンドギャップ半導体素子とすることにより、高温動作が可能となる。   In the semiconductor module according to the present embodiment, since the exposed surface of the hole 6a and the external connection terminal 8 are in direct contact for electrical connection, inductance can be reduced, so that surge voltage during operation of the semiconductor module can be reduced. It can be suppressed. Therefore, high speed operation is possible by making the semiconductor element 3 a wide band gap semiconductor element such as a SiC semiconductor element. Moreover, since the semiconductor module in the present embodiment does not use solder or silicone gel for electrical connection between the exposed surface of the hole 6a and the external connection terminal, the restriction on the operating temperature is eased. Therefore, the semiconductor element 3 can be operated at a high temperature by using a wide band gap semiconductor element such as a SiC semiconductor element.

また、本実施の形態における半導体モジュールの接続方法は、穴６ａから露出している回路パターン１ｃ、半導体素子３、又は金属板５に外部接続端子８の先端を接触させることにより、外部と電気的に接続することを特徴とする。   The semiconductor module connection method in the present embodiment is such that the tip of the external connection terminal 8 is brought into electrical contact with the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a. It is characterized by connecting to.

従って、穴６ａから露出している回路パターン１ｃ、半導体素子３、又は金属板５に外部接続端子８の先端を接触させるだけで、外部と電気的に接続することが可能であるため、例えば、従来技術の様にねじ止めなどを必要とする接続方法と比較して、容易に電気的接続を行うことが可能である。また、穴６ａの露出部分と外部接続端子８が直接接触することで電気的接続を行うため、金属端子等を介して接続を行う場合と比較して、よりインダクタンスを低減することが可能である。よって、外部との接続時に、電気的特性を良好に保つことが可能である。   Therefore, it is possible to electrically connect to the outside simply by bringing the tip of the external connection terminal 8 into contact with the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a. Compared with a connection method that requires screwing or the like as in the prior art, electrical connection can be easily performed. In addition, since the electrical connection is made by direct contact between the exposed portion of the hole 6a and the external connection terminal 8, it is possible to further reduce the inductance compared to the case where the connection is made through a metal terminal or the like. . Therefore, it is possible to maintain good electrical characteristics when connected to the outside.

また、本実施の形態における半導体モジュールの接続方法において、外部接続端子８は、弾性を有し、穴６ａから露出している回路パターン１ｃ、半導体素子３、又は金属板５に外部接続端子８の先端を押圧することにより接触して、外部と電気的に接続することを特徴とする。   In the semiconductor module connection method according to the present embodiment, the external connection terminal 8 has elasticity, and the circuit pattern 1c exposed from the hole 6a, the semiconductor element 3, or the metal plate 5 is connected to the external connection terminal 8. It is characterized in that it is brought into contact by pressing the tip and is electrically connected to the outside.

従って、本実施の形態における半導体モジュールの接続方法において、外部接続端子８が弾性を有するため、穴６ａに外部接続端子８を挿入したときに穴６ａの内壁面および穴６ａの露出部分にかかる外力が緩和されるため、半導体モジュールに生じる応力を緩和することが可能である。よって、半導体モジュールに応力がかかることによって生じる電気的特性の変動等を抑制することが可能である。   Therefore, in the semiconductor module connection method according to the present embodiment, since the external connection terminal 8 has elasticity, the external force applied to the inner wall surface of the hole 6a and the exposed portion of the hole 6a when the external connection terminal 8 is inserted into the hole 6a. Therefore, stress generated in the semiconductor module can be relaxed. Therefore, it is possible to suppress fluctuations in electrical characteristics caused by stress applied to the semiconductor module.

また、本実施の形態における半導体モジュールの接続方法において、外部接続端子８の先端には針状の突起８ａが設けられることを特徴とし、穴６ａから露出している回路パターン１ｃ、半導体素子３、又は金属板５に外部接続端子８の針状の突起８ａが突き刺さることにより接触して、外部と電気的に接続することを特徴とする。   Further, in the semiconductor module connection method in the present embodiment, the tip of the external connection terminal 8 is provided with a needle-like projection 8a, and the circuit pattern 1c exposed from the hole 6a, the semiconductor element 3, Alternatively, the metal plate 5 is brought into contact with the needle-like protrusion 8a of the external connection terminal 8 so as to be electrically connected to the outside.

従って、針状の突起８ａを穴６ａの露出面に突き刺すことにより、金属表面の酸化膜や皮膜を貫通して金属真性面と接触することが可能となるため、電気的に抵抗が低く安定した接続状態が得られる。   Therefore, by sticking the needle-like protrusion 8a into the exposed surface of the hole 6a, it is possible to penetrate the oxide film or film on the metal surface and contact the metal intrinsic surface, so that the electrical resistance is low and stable. Connection status is obtained.

＜実施の形態２＞
＜構成＞
図５に、本実施の形態における半導体モジュールの断面図を示す。本実施の形態における半導体モジュールは、実施の形態１（図１）で説明した半導体モジュールに対して、樹脂６に形成される穴６ａの構造が異なる。それ以外の構成は実施の形態１と同じであるため、説明を省略する。 <Embodiment 2>
<Configuration>
FIG. 5 shows a cross-sectional view of the semiconductor module in the present embodiment. The semiconductor module in the present embodiment differs from the semiconductor module described in the first embodiment (FIG. 1) in the structure of the holes 6a formed in the resin 6. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

本実施の形態では、樹脂６に形成された穴６ａの内壁面は、可撓性の緩衝材７で覆われている。つまり、穴６ａには、可撓性を有する筒状の緩衝材７が埋め込まれている。緩衝材７の素材は、例えば、シリコーンゴムを用いる。本実施の形態において使用する緩衝材７の断面図の例を図６（ａ）〜（ｆ）に示す。本実施の形態における半導体モジュールにおいては、緩衝材７の筒状の筒穴部分の形状が、実施の形態１における穴６ａの形状に相当する。例えば、緩衝材７の筒状の筒穴部分の形状は、円柱状とすればよい（図６（ａ））。また、この円柱は、上に向かって細くなる形状（図６（ｂ））や、下に向かって細くなる形状（図６（ｃ））であってもよい。また、図６（ｄ）〜（ｆ）の様に筒穴部分に突起を備える形状、あるいは、外部接続端子８を挿入することにより筒穴部分が押し広げられる形状でもよい。このように、筒穴部分の形状を工夫することによって、緩衝材７の筒穴部分（即ち穴６ａ）に挿入される外部接続端子８を安定して保持することができる。なお、緩衝材７の上下両端にリブを設けると、穴６ａから緩衝材７が外れることを防止できるため好ましい。   In the present embodiment, the inner wall surface of the hole 6 a formed in the resin 6 is covered with a flexible cushioning material 7. That is, a flexible cylindrical cushioning material 7 is embedded in the hole 6a. For example, silicone rubber is used as the material of the buffer material 7. Examples of cross-sectional views of the cushioning material 7 used in the present embodiment are shown in FIGS. In the semiconductor module in the present embodiment, the shape of the cylindrical tube hole portion of the buffer material 7 corresponds to the shape of the hole 6a in the first embodiment. For example, the shape of the cylindrical tube hole portion of the buffer material 7 may be a columnar shape (FIG. 6A). Further, the cylinder may have a shape that narrows upward (FIG. 6B) or a shape that narrows downward (FIG. 6C). Further, as shown in FIGS. 6D to 6F, a shape having a protrusion in the tube hole portion, or a shape in which the tube hole portion is pushed and expanded by inserting the external connection terminal 8 may be used. Thus, by devising the shape of the cylindrical hole portion, the external connection terminal 8 inserted into the cylindrical hole portion (that is, the hole 6a) of the cushioning material 7 can be stably held. In addition, it is preferable to provide ribs at both upper and lower ends of the buffer material 7 because the buffer material 7 can be prevented from coming off from the hole 6a.

＜外部接続端子との接続方法＞
本実施の形態における半導体モジュールと外部接続端子８との接続方法は、実施の形態１と同様である。つまり、図５の穴６ａ、即ち緩衝材７の筒穴部分に外部接続端子８を挿入することにより、半導体モジュールと外部との電気的接続を行う。なお、本実施の形態において、外部接続端子８は、実施の形態１で説明した外部接続端子８（図３、図４）を用いる。 <Connection method with external connection terminal>
The connection method between the semiconductor module and the external connection terminal 8 in the present embodiment is the same as that in the first embodiment. That is, by inserting the external connection terminal 8 into the hole 6a of FIG. 5, that is, the cylindrical hole portion of the buffer material 7, the semiconductor module is electrically connected to the outside. In the present embodiment, the external connection terminal 8 uses the external connection terminal 8 (FIGS. 3 and 4) described in the first embodiment.

例えば、図６（ｆ）に示す様な、筒穴部分にねじ溝状の突起が形成された緩衝材７が樹脂６に埋め込まれている場合は、図３（ａ）に示す様なバネ構造の外部接続端子８をねじのように回転させながら、緩衝材７の筒穴部分に挿入する。このように、筒穴部分の突起と外部接続端子８の形状とを対応させることで、緩衝材７の内側に外部接続端子８を安定して保持することが可能である。また、図３（ａ）に示した外部接続端子８の先端に針状の突起８ａを設けて図４（ｅ）の様な形状にすることで、外部接続端子８を回転させながら穴６ａに挿入する際に、針状の突起８ａが、穴６ａの露出面の表面酸化物や皮膜を円弧状に削り、金属真性面との接触が可能となるため、より好ましい。   For example, as shown in FIG. 6 (f), when the cushioning material 7 having a thread groove-like projection formed in the cylindrical hole portion is embedded in the resin 6, the spring structure as shown in FIG. 3 (a). The external connection terminal 8 is inserted into the cylindrical hole portion of the cushioning material 7 while rotating like a screw. In this manner, the external connection terminals 8 can be stably held inside the cushioning material 7 by making the projections of the cylindrical hole portions correspond to the shapes of the external connection terminals 8. Further, by providing a needle-like protrusion 8a at the tip of the external connection terminal 8 shown in FIG. 3A to have a shape as shown in FIG. 4E, the external connection terminal 8 is rotated into the hole 6a. At the time of insertion, the needle-like protrusion 8a is more preferable because the surface oxide or film on the exposed surface of the hole 6a is cut into an arc shape and can contact with the metal intrinsic surface.

なお、本実施の形態における半導体モジュールは、穴６ａの内壁面が可撓性の緩衝材７で覆われている。よって、外部接続端子８を穴６ａに挿入することによる外力が、緩衝材７によって吸収される。つまり、穴６ａ近傍に位置する半導体素子３、金属板５、配線パターン１ｃに生じる応力が抑制される。よって、半導体モジュールに生じる応力が原因となって生じる電気的特性の変動等を抑制することが可能である。   In the semiconductor module according to the present embodiment, the inner wall surface of the hole 6a is covered with a flexible cushioning material 7. Therefore, the external force caused by inserting the external connection terminal 8 into the hole 6 a is absorbed by the buffer material 7. That is, the stress generated in the semiconductor element 3, the metal plate 5, and the wiring pattern 1c located in the vicinity of the hole 6a is suppressed. Therefore, it is possible to suppress fluctuations in electrical characteristics caused by the stress generated in the semiconductor module.

＜製造方法＞
図７を用いて、本実施の形態における半導体モジュールの製造方法を説明する。まず、実施の形態１と同様に、基板１の一方主面に回路パターン１ｃを形成し、回路パターン１ｃ上に半導体素子３をはんだ２等により接合する。そして、回路パターン１ｃと半導体素子３との間、および半導体素子３間の所定の位置に金属板５をはんだにより接合する（図７（ａ））。 <Manufacturing method>
The manufacturing method of the semiconductor module in this Embodiment is demonstrated using FIG. First, as in the first embodiment, a circuit pattern 1c is formed on one main surface of the substrate 1, and the semiconductor element 3 is bonded onto the circuit pattern 1c with solder 2 or the like. Then, the metal plate 5 is joined by solder between the circuit pattern 1c and the semiconductor element 3 and at predetermined positions between the semiconductor elements 3 (FIG. 7A).

次に、図７（ｂ）に示す様に、図５の穴６ａに対応する位置に、緩衝材７を配置する。このとき、緩衝材７の筒状の部分からは、回路パターン１ｃ、半導体素子３、又は金属板５が平面視で露出している。また、緩衝材７を、緩衝材７と露出部分との間に隙間が生じないように配置する。なお、後述する上金型１０ｂの内面の上面が平坦な場合は、緩衝材７の上端の高さが等しくなるように配置する。   Next, as shown in FIG. 7B, the cushioning material 7 is disposed at a position corresponding to the hole 6a in FIG. At this time, the circuit pattern 1c, the semiconductor element 3, or the metal plate 5 is exposed from the cylindrical part of the buffer material 7 in a plan view. Further, the buffer material 7 is arranged so that no gap is generated between the buffer material 7 and the exposed portion. In addition, when the upper surface of the inner surface of the upper mold 10b described later is flat, the upper end of the cushioning material 7 is arranged so that the heights thereof are equal.

次に、トランスファーモールド法により樹脂封止するために、半導体モジュールを下金型１０ａと上金型１０ｂの間に配置する（図７（ｃ））。このとき、各緩衝材７の上端と、上金型１０ｂの内面の上面は隙間無く接しているとする。   Next, the semiconductor module is placed between the lower mold 10a and the upper mold 10b for resin sealing by the transfer molding method (FIG. 7C). At this time, it is assumed that the upper end of each buffer material 7 and the upper surface of the inner surface of the upper mold 10b are in contact with each other without a gap.

最後に、金型内部に樹脂６を注入することにより、緩衝材７の筒状の筒穴部分を除いて、基板１、回路パターン１ｃ、半導体素子３、金属板５および緩衝材７が樹脂封止される（図７（ｄ））。このとき、緩衝材７の筒状の筒穴部分に樹脂６が注入されないのは、緩衝材７の下端は露出部分と隙間無く接し、かつ上端は上金型１０ｂと隙間無く接しているためである。以上の工程により、本実施の形態における半導体モジュールを得る。   Finally, by injecting the resin 6 into the mold, the substrate 1, the circuit pattern 1 c, the semiconductor element 3, the metal plate 5, and the buffer material 7 are resin-sealed except for the cylindrical hole portion of the buffer material 7. It is stopped (FIG. 7 (d)). At this time, the resin 6 is not injected into the cylindrical cylindrical hole portion of the cushioning material 7 because the lower end of the cushioning material 7 is in contact with the exposed portion without any gap and the upper end is in contact with the upper mold 10b without any gap. is there. Through the above steps, the semiconductor module in the present embodiment is obtained.

＜効果＞
本実施の形態における半導体モジュールに備わる穴６ａの内壁面は、可撓性の緩衝材７で覆われていることを特徴とする。 <Effect>
The inner wall surface of the hole 6 a provided in the semiconductor module in the present embodiment is covered with a flexible buffer material 7.

従って、外部接続端子８を穴６ａに挿入することによる外力が、緩衝材７によって吸収される。つまり、穴６ａ近傍に位置する半導体素子３、金属板５、配線パターン１ｃに生じる応力が抑制される。よって、半導体モジュールに生じる応力が原因となるって生じる電気的特性の変動等を抑制することが可能である。   Therefore, the external force caused by inserting the external connection terminal 8 into the hole 6 a is absorbed by the buffer material 7. That is, the stress generated in the semiconductor element 3, the metal plate 5, and the wiring pattern 1c located in the vicinity of the hole 6a is suppressed. Therefore, it is possible to suppress fluctuations in electrical characteristics caused by the stress generated in the semiconductor module.

また、本実施の形態における半導体モジュールの製造方法は、基板１の一方主面に回路パターン１ｃを形成する工程（ａ）と、回路パターン１ｃ上に半導体素子３を接合する工程（ｂ）と、回路パターン１ｃと半導体素子３との間、および／又は半導体素子３間に金属板５を接合する工程（ｃ）と、工程（ｃ）の後に、可撓性を有する筒状の緩衝材７を、平面視で筒状の筒穴部分から、回路パターン１ｃ、半導体素子３、又は金属板５が露出し、かつ露出面と緩衝材７が隙間なく接するように配置する工程（ｄ）と、工程（ｄ）の後に、トランスファーモールド法により、緩衝材７の筒状の筒穴部分を除いて、基板１、回路パターン１ｃ、半導体素子３、金属板５および緩衝材７を樹脂封止する工程（ｅ）とを備える。   The method for manufacturing a semiconductor module in the present embodiment includes a step (a) of forming a circuit pattern 1c on one main surface of the substrate 1, a step (b) of bonding the semiconductor element 3 on the circuit pattern 1c, A step (c) of joining the metal plate 5 between the circuit pattern 1c and the semiconductor element 3 and / or between the semiconductor elements 3, and after the step (c), a flexible cylindrical cushioning material 7 is provided. A step (d) in which the circuit pattern 1c, the semiconductor element 3, or the metal plate 5 is exposed from the cylindrical hole portion in plan view, and the exposed surface and the buffer material 7 are in contact with each other without a gap; After (d), the step of resin-sealing the substrate 1, the circuit pattern 1 c, the semiconductor element 3, the metal plate 5, and the buffer material 7 except for the cylindrical tube hole portion of the buffer material 7 by a transfer molding method ( e).

従って、穴６ａに対応する部分に筒状の緩衝材７を配置してから、トランスファーモールド法による樹脂封止を行うことで、緩衝材７の筒穴部分は樹脂封止されないため、穴６ａを形成することが可能である。また、緩衝材７を配置することによって穴６ａを形成するため、トランスファーモールド法により樹脂封止する際に、上金型１０ｂの内面の上面は平坦でよい。よって、穴６ａの配置が異なる場合であっても、上金型１０ｂを共用することができるため、製造コストを削減することが可能である。さらに、製造後に、筒状の緩衝材７が穴６ａに埋め込まれた状態で樹脂６に留まる。よって、穴６ａに外部接続端子８を挿入した際に、穴６ａにかかる外力が緩衝材７により吸収される。よって、外部接続端子８による外力から、半導体モジュールを保護することが可能である。また、樹脂封止後に、樹脂６から緩衝材７を取り除く必要が無いため、生産効率が向上する。   Therefore, by placing the cylindrical cushioning material 7 in the portion corresponding to the hole 6a and then performing resin sealing by transfer molding, the cylindrical hole portion of the cushioning material 7 is not resin-sealed. It is possible to form. Further, since the hole 6a is formed by disposing the buffer material 7, the upper surface of the inner surface of the upper mold 10b may be flat when the resin is sealed by the transfer molding method. Therefore, even if the arrangement of the holes 6a is different, the upper mold 10b can be shared, so that the manufacturing cost can be reduced. Furthermore, after manufacture, the cylindrical cushioning material 7 remains in the resin 6 in a state of being embedded in the hole 6a. Therefore, when the external connection terminal 8 is inserted into the hole 6 a, the external force applied to the hole 6 a is absorbed by the buffer material 7. Therefore, it is possible to protect the semiconductor module from external force due to the external connection terminal 8. Moreover, since it is not necessary to remove the buffer material 7 from the resin 6 after the resin sealing, the production efficiency is improved.

＜実施の形態３＞
図８（ａ），（ｂ）に、本実施の形態における半導体モジュールの断面図と平面図をそれぞれ示す。本実施の形態における半導体モジュールは、実施の形態２における半導体モジュール（図５）において、複数の緩衝材７を、緩衝材７と同じ素材の接続用部材７ａにより相互に繋げた構成である。その他の構成は実施の形態２における半導体モジュールと同じであるため、説明を省略する。 <Embodiment 3>
8A and 8B are a cross-sectional view and a plan view, respectively, of the semiconductor module in the present embodiment. The semiconductor module according to the present embodiment has a configuration in which a plurality of cushioning materials 7 are connected to each other by connection members 7a made of the same material as the cushioning material 7 in the semiconductor module according to the second embodiment (FIG. 5). Since other configurations are the same as those of the semiconductor module according to the second embodiment, description thereof is omitted.

図７（ｂ）に示すように、接続用部材７ａは板状であり、緩衝材７と一体成型されている。実施の形態２では、半導体モジュールの製造工程において複数の緩衝材７を個々に配置したが、本実施の形態では、緩衝材７が接続用部材７ａにより相互につながっているため、全ての緩衝材７を一括して配置することが可能である。   As shown in FIG. 7B, the connection member 7 a is plate-shaped and is integrally formed with the buffer material 7. In the second embodiment, a plurality of cushioning materials 7 are individually arranged in the manufacturing process of the semiconductor module. However, in this embodiment, the cushioning materials 7 are connected to each other by the connecting members 7a, and therefore all the cushioning materials are used. 7 can be arranged together.

＜効果＞
本実施の形態における半導体モジュールの製造方法における、可撓性を有する筒状の緩衝材７を、平面視で筒状の部分から、回路パターン１ｃ、半導体素子３、又は金属板５が露出し、かつ露出面と緩衝材７が隙間なく接するように配置する工程において、配置される緩衝材７は複数であり、緩衝材７は、緩衝材７と同じ素材の接続用部材７ａにより相互に繋がっていることを特徴とする。 <Effect>
In the manufacturing method of the semiconductor module according to the present embodiment, the circuit pattern 1c, the semiconductor element 3, or the metal plate 5 is exposed from the cylindrical portion of the cylindrical cushioning material 7 having flexibility in a plan view. In the step of arranging the exposed surface and the cushioning material 7 so as to be in contact with each other without a gap, the cushioning material 7 to be arranged is plural, and the cushioning material 7 is connected to each other by a connecting member 7a made of the same material as the cushioning material 7. It is characterized by being.

従って、複数の緩衝材７は接続用部材７ａによって繋がっているため、緩衝材７を一括して配置することが可能となる、よって、緩衝材７を配置する際の位置精度の向上および生産効率の向上が期待される。   Accordingly, since the plurality of cushioning materials 7 are connected by the connecting member 7a, the cushioning materials 7 can be arranged in a lump. Therefore, improvement in positional accuracy and production efficiency when the cushioning materials 7 are arranged. Improvement is expected.

＜実施の形態４＞
本実施の形態における半導体モジュールの接続方法について説明する。実施の形態１の半導体モジュール（図１）を用いて説明を行う。まず、樹脂６に形成された穴６ａに、液体金属を流し込む。液体金属は、例えば、インジウム、ガリウムもしくはこれらの合金であるとする。また、液体金属として低融点はんだを用いてもよい。次に、外部接続端子８を穴６ａに挿入して、液体金属に接触させる。つまり外部接続端子８が穴６ａの露出部分に接触していなくても、外部接続端子８が液体金属に接触していれば、半導体モジュールと外部接続端子８は液体金属を介して電気的に接続される。 <Embodiment 4>
A method for connecting semiconductor modules in the present embodiment will be described. The description will be made using the semiconductor module of the first embodiment (FIG. 1). First, liquid metal is poured into a hole 6 a formed in the resin 6. The liquid metal is, for example, indium, gallium, or an alloy thereof. Moreover, you may use a low melting-point solder as a liquid metal. Next, the external connection terminal 8 is inserted into the hole 6a and brought into contact with the liquid metal. That is, even if the external connection terminal 8 is not in contact with the exposed portion of the hole 6a, if the external connection terminal 8 is in contact with the liquid metal, the semiconductor module and the external connection terminal 8 are electrically connected via the liquid metal. Is done.

＜効果＞
本実施の形態における半導体モジュールの接続方法は、穴６ａに液体金属を流し込み、液体金属に外部接続端子８を接触させることにより、外部と電気的に接続することを特徴とする。 <Effect>
The connection method of the semiconductor module in the present embodiment is characterized in that a liquid metal is poured into the hole 6a and an external connection terminal 8 is brought into contact with the liquid metal to be electrically connected to the outside.

従って、樹脂６に形成された穴６ａから露出する回路パターン１ｃ、半導体素子３、又は金属板５に外部接続端子８を接触させなくても、穴６ａに流し入れられた液体金属に外部接続端子８を接触させれば、半導体モジュールを外部と電気的に接続することが可能である。よって、外部接続端子８を穴６ａに挿入することにより半導体モジュールに生じる応力を低減することが可能である。   Accordingly, even if the external connection terminal 8 is not brought into contact with the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a formed in the resin 6, the external connection terminal 8 is applied to the liquid metal poured into the hole 6a. If they are brought into contact, the semiconductor module can be electrically connected to the outside. Therefore, it is possible to reduce the stress generated in the semiconductor module by inserting the external connection terminal 8 into the hole 6a.

なお、本発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略することが可能である。   It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

１ 基板、１ａ 金属ベース板、１ｂ 絶縁層、１ｃ 回路パターン、２ はんだ、３ 半導体素子、５ 金属板、６ モールド樹脂、６ａ 穴、７ 緩衝材、７ａ 接続用部材、８ 外部接続端子、８ａ 針状の突起、１０ａ 下金型、１０ｂ 上金型。   DESCRIPTION OF SYMBOLS 1 Board | substrate, 1a Metal base plate, 1b Insulation layer, 1c Circuit pattern, 2 Solder, 3 Semiconductor element, 5 Metal plate, 6 Mold resin, 6a Hole, 7 Buffer material, 7a Connection member, 8 External connection terminal, 8a Needle Shaped protrusion, 10a lower mold, 10b upper mold.

Claims (9)

基板の一方主面に設けられた回路パターンと、
前記回路パターン上に接合された半導体素子と、
前記回路パターンと前記半導体素子との間、および／又は前記半導体素子間を接合する金属板と、
を備え、
前記基板、前記回路パターン、前記半導体素子および前記金属板は樹脂により封止されており、
前記樹脂には、穴が形成されており、
前記回路パターン、前記半導体素子、又は前記金属板の一部が、平面視で前記穴から露出していて、
前記穴の内壁面は、可撓性の緩衝材で覆われていて、
前記緩衝材はシリコーンゴムである、
半導体モジュール。 A circuit pattern provided on one main surface of the substrate;
A semiconductor element bonded on the circuit pattern;
A metal plate between the circuit pattern and the semiconductor element and / or between the semiconductor elements;
With
The substrate, the circuit pattern, the semiconductor element and the metal plate are sealed with resin,
A hole is formed in the resin,
A part of the circuit pattern, the semiconductor element, or the metal plate is exposed from the hole in plan view,
The inner wall surface of the hole is covered with a flexible cushioning material,
The cushioning material is silicone rubber.
Semiconductor module. 前記穴から露出している前記回路パターン、前記半導体素子、又は前記金属板は、弾性を有することを特徴とする、
請求項１に記載の半導体モジュール。 The circuit pattern exposed from the hole, the semiconductor element, or the metal plate has elasticity,
The semiconductor module according to claim 1 . 前記半導体素子は、ワイドバンドギャップ半導体素子であることを特徴とする、
請求項１又は請求項２に記載の半導体モジュール。 The semiconductor element is a wide band gap semiconductor element,
The semiconductor module according to claim 1 or 2 . 請求項１〜３のいずれかに記載の半導体モジュールの接続方法であって、A method for connecting a semiconductor module according to any one of claims 1 to 3,
前記穴から露出している前記回路パターン、前記半導体素子、又は前記金属板に外部接続端子の先端を接触させることにより、外部と電気的に接続することを特徴とする、The circuit pattern exposed from the hole, the semiconductor element, or the metal plate is electrically connected to the outside by contacting the tip of an external connection terminal,
半導体モジュールの接続方法。Semiconductor module connection method. 前記外部接続端子は、弾性を有し、
前記穴から露出している前記回路パターン、前記半導体素子、又は前記金属板に前記外部接続端子の前記先端を押圧することにより接触して、外部と電気的に接続することを特徴とする、
請求項４に記載の半導体モジュールの接続方法。 The external connection terminal has elasticity,
The circuit pattern exposed from the hole, the semiconductor element, or the metal plate is brought into contact by pressing the tip of the external connection terminal, and is electrically connected to the outside.
The method for connecting semiconductor modules according to claim 4 . 前記外部接続端子の前記先端には針状の突起が設けられることを特徴とし、
前記穴から露出している前記回路パターン、前記半導体素子、又は前記金属板に前記外部接続端子の前記針状の突起が突き刺さることにより接触して、外部と電気的に接続することを特徴とする、
請求項４または５に記載の半導体モジュールの接続方法。 The tip of the external connection terminal is provided with a needle-like protrusion,
The circuit pattern exposed from the hole, the semiconductor element, or the metal plate is brought into contact with the needle-like protrusion of the external connection terminal by being pierced to be electrically connected to the outside. ,
A method for connecting a semiconductor module according to claim 4 or 5 . 請求項１〜３のいずれかに記載の半導体モジュールの接続方法であって、
前記穴に液体金属を流し込み、
前記液体金属に外部接続端子を接触させることにより、外部と電気的に接続することを特徴とする、
半導体モジュールの接続方法。 A method for connecting a semiconductor module according to any one of claims 1 to 3,
Pour liquid metal into the hole,
By connecting an external connection terminal to the liquid metal, it is electrically connected to the outside,
Semiconductor module connection method. （ａ）基板の一方主面に回路パターンを形成する工程と、
（ｂ）前記回路パターン上に半導体素子を接合する工程と、
（ｃ）前記回路パターンと前記半導体素子との間、および／又は前記半導体素子間に金属板を接合する工程と、
（ｄ）前記工程（ｃ）の後に、可撓性を有する筒状の緩衝材を、平面視で前記筒状の筒穴部分から、前記回路パターン、前記半導体素子、又は前記金属板が露出し、かつ露出面と前記緩衝材が隙間なく接するように配置する工程と、
（ｅ）前記工程（ｄ）の後に、トランスファーモールド法により、前記緩衝材の前記筒状の筒穴部分を除いて、前記基板、前記回路パターン、前記半導体素子、前記金属板および前記緩衝材を樹脂封止する工程と、
を備え、
前記緩衝材はシリコーンゴムである、
半導体モジュールの製造方法。 (A) forming a circuit pattern on one main surface of the substrate;
(B) bonding a semiconductor element on the circuit pattern;
(C) joining a metal plate between the circuit pattern and the semiconductor element and / or between the semiconductor elements;
(D) After the step (c), the circuit pattern, the semiconductor element, or the metal plate is exposed from the cylindrical tube hole portion of the cylindrical buffer material having flexibility in a plan view. And a step of arranging the exposed surface and the cushioning material so as to contact each other without a gap,
(E) After the step (d), the substrate, the circuit pattern, the semiconductor element, the metal plate, and the buffer material are removed by a transfer molding method except for the cylindrical tube hole portion of the buffer material. A step of resin sealing;
With
The cushioning material is silicone rubber.
Manufacturing method of semiconductor module. 前記工程（ｄ）において、配置される前記緩衝材は複数であり、前記緩衝材は、前記緩衝材と同じ素材の接続用部材により相互に繋がっていることを特徴とする、
請求項８に記載の半導体モジュールの製造方法。 In the step (d), a plurality of the buffer materials are arranged, and the buffer materials are connected to each other by a connection member made of the same material as the buffer material.
The manufacturing method of the semiconductor module of Claim 8 .
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