JP2014123618A - Semiconductor module, manufacturing method of the same, and connection method of the same - Google Patents

Semiconductor module, manufacturing method of the same, and connection method of the same Download PDF

Info

Publication number
JP2014123618A
JP2014123618A JP2012278126A JP2012278126A JP2014123618A JP 2014123618 A JP2014123618 A JP 2014123618A JP 2012278126 A JP2012278126 A JP 2012278126A JP 2012278126 A JP2012278126 A JP 2012278126A JP 2014123618 A JP2014123618 A JP 2014123618A
Authority
JP
Japan
Prior art keywords
circuit pattern
semiconductor module
semiconductor element
metal plate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012278126A
Other languages
Japanese (ja)
Other versions
JP6016611B2 (en
Inventor
Akiko Goto
晶子 後藤
Seiji Oka
誠次 岡
Hiroshi Yoshida
博 吉田
Original Assignee
Mitsubishi Electric Corp
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, 三菱電機株式会社 filed Critical Mitsubishi Electric Corp
Priority to JP2012278126A priority Critical patent/JP6016611B2/en
Publication of JP2014123618A publication Critical patent/JP2014123618A/en
Application granted granted Critical
Publication of JP6016611B2 publication Critical patent/JP6016611B2/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005Shape
    • H01L2224/4009Loop shape
    • H01L2224/40095Kinked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

An object of the present invention is to provide a small-sized semiconductor module with reduced inductance.
A semiconductor module according to the present invention includes a circuit pattern 1c provided on one main surface of a substrate 1, a semiconductor element 3 bonded on the circuit pattern 1c, and a circuit pattern 1c and the semiconductor element 3. And / or a metal plate 5 for joining the semiconductor elements 3, and the substrate 1, the circuit pattern 1 c, the semiconductor element 3 and the metal plate 5 are sealed with a resin 6, and the resin 6 has a hole 6 a. A part of the circuit pattern 1c, the semiconductor element 3, or the metal plate 5 is exposed from the hole 6a in plan view.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor module, a manufacturing method thereof, and a connection method thereof, for example, a semiconductor module for power use.

  As a resin-sealed power semiconductor module resin-sealed by a transfer mold method, a power semiconductor element such as an IGBT is arranged on an insulating layer and a circuit pattern provided on a metal radiator, and is used for external connection. A device in which a main terminal and a control terminal are arranged substantially perpendicular to a circuit pattern surface is generally known (see, for example, Patent Document 1).

  Patent Document 2 describes a semiconductor module in which a main terminal or a control terminal has a cylindrical shape with a screw cut inside. By attaching a bolt to the cylinder, the main terminal or the control terminal is connected to the external wiring. A semiconductor module is also described in which a female connector is provided on the main terminal or the control terminal to connect to external wiring.

  In the power semiconductor module described in Patent Document 3, the main terminal or the control terminal of the semiconductor module is a cylindrical metal terminal exposed on the surface of the sealing resin, and the external terminal pin of the compliant pin type is cylindrical. By press-fitting into the metal terminal, conduction with an external circuit is performed.

  In general, in a semiconductor module, between the power semiconductor element and the main terminal, between the power semiconductor element and the control terminal, and between the power semiconductor elements are electrically connected by bonding wires (for example, patents). It is electrically connected by a metal plate (see, for example, Patent Document 3).

  When a bonding wire is used for the internal wiring of the power semiconductor module, it is necessary to provide a space for the wire bonding apparatus to perform bonding around the power semiconductor element. Therefore, there is a problem that miniaturization of the power semiconductor module is limited. Also, when using a wire bonding device, it is necessary to secure a space so that each mechanism of the bonding head does not interfere with the main terminal or the control terminal. In addition, a space is required around the parts other than the components constituting the power semiconductor module, which is also a factor that limits the miniaturization of the power semiconductor module. The above-described problem can be solved by making a connection using a metal plate instead of the bonding wire.

JP 2001-284524 A JP 2007-184315 A JP 2010-129550 A

  In the semiconductor module described in Patent Document 2, when connecting external wiring, it is necessary to provide a screw hole on the inner side of the cylinder, to resin-mold a nut, or to use a female connector. It is necessary to provide a connector part, and the length of the cylindrical terminal becomes longer, which limits the reduction in the thickness of the power semiconductor module, and increases the electrical resistance due to the longer routing of the wiring. There was a problem that the characteristics deteriorated. In addition, when a screw or pin is used for connection with the external wiring, the electrical resistance increases at the connection portion, resulting in deterioration of the electrical characteristics of the module. For the solder connection, there is an external substrate above the connection part, the soldering part is hidden, the workability is poor, and there is a problem that the inspection after joining is difficult to perform.

  In the power semiconductor module described in Patent Document 1, since the tip of the external connection terminal is exposed from the sealing resin in a convex shape, the upper mold of the transfer mold has a concave shape that matches this convex shape. Therefore, there is a problem that the processing cost of the upper mold is high. In addition, when the position of the external connection terminal differs depending on the product, it is necessary to prepare an upper mold for the transfer mold for each type of product, and there is a problem that costs are required.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide a small-sized semiconductor module with reduced inductance.

  Another object of the present invention is to provide a semiconductor module connection method that reduces inductance when connected to the outside.

  Another object of the present invention is to provide a semiconductor module manufacturing method that can manufacture a small-sized semiconductor module with reduced inductance at low cost.

  A semiconductor module according to the present invention joins a circuit pattern provided on one main surface of a substrate, a semiconductor element joined on the circuit pattern, a circuit pattern and a semiconductor element, and / or a semiconductor element. A substrate, a circuit pattern, a semiconductor element, and a metal plate are sealed with a resin, and a hole is formed in the resin, and a part of the circuit pattern, the semiconductor element, or the metal plate It is characterized by being exposed from the hole in plan view.

  The semiconductor module connection method according to the present invention is electrically connected to the outside by bringing the tip of the external connection terminal into contact with a circuit pattern, a semiconductor element, or a metal plate exposed from a hole provided in the resin. It is characterized by connecting.

  In addition, the method for manufacturing a semiconductor module according to the present invention includes a step (a) of forming a circuit pattern on one main surface of a substrate, a step (b) of bonding a semiconductor element on the circuit pattern, a circuit pattern and a semiconductor element. And / or after the step (c) of joining the metal plate between the semiconductor elements and the step (c), the cylindrical cushioning material having flexibility is formed into a cylindrical cylindrical hole portion in a plan view. From the step (d), in which the circuit pattern, the semiconductor element, or the metal plate is exposed and the exposed surface and the buffer material are in contact with no gap, and after the step (d), the transfer material is used to transfer the buffer material. A step (e) of resin-sealing a substrate, a circuit pattern, a semiconductor element, a metal plate, and a buffer material except for the inside of the cylindrical tube hole portion.

  According to the semiconductor module of the present invention, when electrical connection between the semiconductor module and the outside is performed, the external connection terminal is inserted into the hole formed in the resin, and the circuit pattern and the semiconductor element exposed from the hole Alternatively, electrical connection by contact with a metal plate can be performed. Therefore, since the external connection terminal and the exposed portion of the semiconductor module are in direct contact with each other, it is possible to reduce the inductance at the time of connection and maintain good electrical characteristics. Furthermore, since it is not necessary to provide a metal terminal or the like on the semiconductor module side in order to make an electrical connection with the outside, it is possible to reduce the number of parts constituting the semiconductor module, and accordingly reduce the manufacturing cost of the semiconductor module. It is possible to reduce the size and weight.

  Further, according to the method for connecting a semiconductor module according to the present invention, the external connection terminal 8 can be electrically connected to the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a only by contacting the tip of the external connection terminal 8. Therefore, electrical connection can be easily performed as compared with a connection method that requires screwing or the like. In addition, since the electrical connection is made by direct contact between the exposed portion of the hole 6a and the external connection terminal 8, it is possible to further reduce the inductance compared to the case where the connection is made through a metal terminal or the like. . Therefore, it is possible to maintain good electrical characteristics when connected to the outside.

  Further, according to the method for manufacturing a semiconductor module according to the present invention, the cylindrical cushioning material is disposed in a portion corresponding to the hole provided in the resin, and then the resin sealing is performed by the transfer molding method. Since the cylindrical cylindrical hole portion is not sealed with resin, it is possible to form a hole. Further, since the hole is formed by arranging the buffer material, the upper surface of the inner surface of the upper mold may be flat when resin sealing is performed by the transfer molding method. Therefore, even if the arrangement of the holes is different, the upper mold can be shared, so that the manufacturing cost can be reduced. Furthermore, after manufacturing, the cylindrical cushioning material remains in the resin in a state of being embedded in the hole. Therefore, when the external connection terminal is inserted into the hole, the external force applied to the hole is absorbed by the cushioning material. Therefore, it is possible to protect the semiconductor module from external force due to the external connection terminal. Moreover, since it is not necessary to remove the buffer material from the resin after the resin sealing, the production efficiency is improved.

1 is a cross-sectional view of a semiconductor module according to a first embodiment. 6 is a diagram for explaining a connection method between the semiconductor module and the external connection terminals according to Embodiment 1. FIG. It is a figure which shows the structure of the external connection terminal which has elasticity. It is a figure which shows the structure of the external connection terminal provided with the needle-shaped protrusion at the front-end | tip. FIG. 4 is a cross-sectional view of a semiconductor module according to a second embodiment. FIG. 6 is a diagram illustrating a buffer material provided in a semiconductor module according to a second embodiment. FIG. 10 is a diagram for explaining the method for manufacturing a semiconductor module according to the second embodiment. FIG. 6 is a cross-sectional view and a plan view of a semiconductor module according to a third embodiment.

<Embodiment 1>
<Configuration>
FIG. 1 shows a cross-sectional view of the semiconductor module in the present embodiment. The semiconductor module in the present embodiment is a semiconductor module for power use, for example.

  The substrate 1 includes a metal base plate 1a that is a metal radiator that dissipates heat generated in the semiconductor module, and an insulating layer 1b that is a high thermal conductive insulating layer provided on the upper surface of the metal base plate 1a. A metal circuit pattern 1c is provided on the upper surface of the insulating layer 1b.

  The semiconductor element 3 is joined to the circuit pattern 1c via the solder 2 or the like. The semiconductor element 3 is a power semiconductor element, for example, an IGBT chip and an FWD (Free Wheeling Diode) chip. In the present embodiment, it is assumed that the semiconductor element 3 is a wide band gap semiconductor element such as a SiC semiconductor element.

  The wiring between the semiconductor elements 3 and between the semiconductor elements 3 and the circuit pattern 1c are connected by a metal plate 5 for wiring. The metal plate 5 is made of a copper-based or aluminum-based metal having a low electric resistance and excellent bending workability. In consideration of an external force received from an external connection terminal 8 to be described later, the circuit pattern 1c, the metal plate 5, and the electrodes on the upper surface of the semiconductor element 3 are preferably formed of a material having high elasticity. This is, for example, a copper-based or aluminum-based metal material.

  The substrate 1, the semiconductor element 3 and the metal plate 5 are sealed with a resin 6. The resin 6 is provided with a plurality of holes 6a, and a part of the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 is exposed from the hole 6a in a plan view. Note that the lower surface of the substrate 1 is not covered with the resin 6 and is exposed for heat dissipation.

  In addition, the hole 6a formed in the resin 6 should just penetrate the resin 6, and should just be a shape which can be easily contacted with the external connection terminal 8 (FIG. 2) mentioned later. As the shape of the hole 6a, for example, a quadrangular prism shape, a cylindrical shape, a shape that narrows downward, and the like are possible. However, when the external connection terminal 8 is inserted into the hole 6a, the resin 6 on the inner wall surface of the hole 6a and the exposed portion of the hole 6a (that is, the circuit pattern 1c exposed from the hole 6a in plan view, the semiconductor element 3 or the metal plate) 5) receives external force from the external connection terminal 8, and stress is generated in the semiconductor element 3, the metal plate 5, and the circuit pattern 1c located in the vicinity of the hole 6a. There are concerns about fluctuations in the electrical characteristics of the semiconductor module due to this stress. Therefore, the shape of the hole 6a is preferably a cylindrical shape in which the external force received from the external connection terminal 8 is easily dispersed. Moreover, it is possible to suppress that the shape of the external connection terminal 8 receives restrictions by the shape of the hole 6a by making the hole 6a cylindrical shape. Furthermore, improvement in work efficiency when inserting the external connection terminal 8 can be expected.

  In the semiconductor module according to the present embodiment, as described above, a highly elastic metal is used for the circuit pattern 1c, the metal plate 5, and the electrodes on the upper surface of the semiconductor element 3. Thereby, when the external connection terminal 8 contacts the exposed portion of the hole 6a, the stress generated in the semiconductor module due to the external force of the external connection terminal 8 can be suppressed, and the semiconductor module can be protected.

<Connection method with external connection terminal>
A method for connecting the semiconductor module to the outside in this embodiment will be described with reference to FIG. The external connection terminals 8 are inserted into the holes 6a on the surface of the semiconductor module. Then, the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a and the tip of the external connection terminal 8 inserted into the hole 6a come into contact. By this contact, the semiconductor module is electrically connected to an external customer board, for example, via the external connection terminal 8.

  Specific examples of the external connection terminals 8 are shown in FIGS. The external connection terminals 8 shown in FIGS. 3A to 3C have elasticity in the vertical direction due to the spring structure. Further, the external connection terminals 8 in FIGS. 3D and 3E are elastic in the vertical direction by the S-shape and the leaf spring structure, respectively, and the shape is also deformed in the left-right direction in accordance with the vertical deformation. .

  In this manner, the external connection terminal 8 having elasticity in the vertical direction is inserted into the hole 6a of the resin 6, and the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 is pressed by pressing the tip of the external connection terminal 8. Then, it is electrically connected to an external customer board (not shown).

  When the external connection terminal 8 is inserted into the hole 6a of the resin 6, an external force is applied to the resin 6 on the inner wall surface of the hole 6a and the exposed portion of the hole 6a, and the semiconductor element 3, the metal plate 5, and the circuit pattern located near the hole 6a. Stress occurs in 1c. There are concerns about fluctuations in the electrical characteristics of the semiconductor module due to this stress. Therefore, in the present embodiment, the external connection terminal 8 is made of a highly elastic structure as shown in FIG. 3, so that the aforementioned external force is alleviated, so that fluctuations in electrical characteristics of the semiconductor module are suppressed. be able to.

  Further, in order to release the electrical connection state with the outside, the external connection terminal 8 may be separated from the exposed portion of the hole 6a, and the external connection terminal 8 does not deform even if it is pressed many times. Return to the shape. Therefore, for example, when inspecting the electrical characteristics of the semiconductor module, it is convenient when repeatedly connecting and disconnecting with an external inspection device.

  As shown in FIGS. 3D and 3E, an external connection terminal 8 having a structure that deforms in the left-right direction, that is, the surface direction of the substrate 1 in accordance with the elastic deformation in the vertical direction may be used. In this case, since the deformation amount of the external connection terminal 8 in the surface direction of the substrate 1 can be defined by the shape of the hole 6a, it is possible to prevent the external connection terminal 8 from being excessively deformed and not returning to the original shape due to the pressing. Can do.

  Further, as shown in FIGS. 3B to 3E, an external connection terminal 8 having at least one tip tapered may be used. Since the pressure concentrates on the tip of the external connection terminal 8, the external connection terminal 8 can exhibit a stable spring property, so that a more stable electrical connection can be performed.

  Further, as another example of the external connection terminal 8 in the present embodiment, as shown in FIGS. 4A to 4E, an external connection terminal 8 provided with a needle-like protrusion 8a at at least one tip is used. May be. The needle-like protrusion 8a is pierced into the exposed surface of the hole 6a, thereby electrically connecting to the outside (customer substrate) (not shown). By piercing the needle-like protrusion 8a into the exposed surface of the hole 6a, the metal surface penetrates through the oxide film or film on the metal surface, so that a stable connection state with low electrical resistance is obtained.

  As shown in FIG. 4 (a) or (d), when the needle-like protrusion 8a provided on the external connection terminal 8 is one, the contact with the exposed portion of the hole 6a is a point contact, so the current capacity is small. Become. When a larger current capacity is required, an external connection terminal 8 having a plurality of needle-like protrusions 8a may be used as shown in FIG. 4 (b) or (c).

  Further, as shown in FIG. 4E, when the needle-like protrusion 8a is provided at the tip of the spring of the external connection terminal 8 having a spring structure, the external connection terminal 8 may be inserted into the hole 6a while rotating. . By doing so, the needle-like protrusion 8a at the tip of the external connection terminal 8 cuts the surface oxide or film on the exposed surface of the hole 6a into an arc shape, so that contact with the metal intrinsic surface is possible.

<Manufacturing method>
First, the substrate 1 is formed by forming the insulating layer 1b on the metal base plate 1a. Then, a metal circuit pattern 1 c is formed on the insulating layer 1 b of the substrate 1. Next, the semiconductor element 3 is joined to the surface of the circuit pattern 1 c on the substrate 1 by, for example, solder 2. As shown in FIG. 1, a plurality of semiconductor elements 3 may be used, for example, an IGBT chip or an FWD chip. Next, the metal plate 5 that connects between the semiconductor elements 3 and between the semiconductor element 3 and the circuit pattern 1c is soldered.

  Next, resin sealing is performed by a transfer mold method. First, the semiconductor module assembled up to the previous process is placed in the lower mold. Next, the upper mold is placed on the lower mold. A pin corresponding to the position and shape of the hole 6a is fixed to the upper surface of the inner surface of the upper mold. The resin 6 is poured into the mold while the lower mold and the upper mold are in close contact with each other. After the resin 6 is cured, the lower mold and the upper mold are removed to obtain the semiconductor module in the present embodiment. In addition, since the pin mentioned above is being fixed to the upper metal mold | die, when removing an upper metal mold | die, it removes from the resin 6 simultaneously.

  As another method of forming the hole 6a, a flexible member may be arranged instead of the pin. In other words, by placing a flexible member approximately vertically between the semiconductor module surface and the upper mold, and then resin-sealing by the transfer molding method, it is possible to prevent the resin from entering any part. Is possible. The hole 6a can be obtained by removing the flexible member after resin sealing. For example, silicone rubber is used as the flexible member. Since the silicone rubber expands due to heat, it expands when the resin is injected and adheres to the surface of the semiconductor module and the upper mold. By this close contact, it is possible to more reliably prevent the resin 6 from entering the portion where the hole 6a is formed, and to reliably form the hole 6a. Furthermore, after the resin is sealed, the silicone rubber shrinks by cooling, so that it can be easily removed from the resin 6.

  In addition, when a plurality of holes 6a are formed, a plurality of flexible members are previously connected by a plate-like member to form the plurality of flexible members on the semiconductor module. It becomes possible to arrange in a lump. Therefore, the positional accuracy when arranging a member having flexibility is improved. Further, productivity can be improved by being able to arrange in a lump. In addition, since it is necessary to remove the flexible member and the plate-like member from the semiconductor module after the resin sealing step, the plate-like member is disposed so that the whole is in contact with the upper surface of the inner surface of the upper mold. The

  The thickness of the resin 6 may be a minimum thickness that can ensure insulation of the metal plate 5 and the semiconductor element 3. By reducing the thickness of the resin 6, the depth of the hole 6a becomes shallow, so that the length of the external connection terminal 8 can be shortened. A reduction in the length of the external connection terminal 8 is preferable because the electrical resistance due to the connection is reduced.

  In order to form the hole 6a using the flexible member described above, it is necessary to design the thickness of the resin 6 (that is, the depth of the hole 6a) to be sufficiently thin. A module is obtained. The electrical resistance is lowered and the electrical characteristics of the module can be improved by reducing the wiring length due to the reduction in thickness. In the present embodiment, since terminals and the like do not protrude from the upper surface of the module during transfer molding, it is not necessary to provide the upper mold with a concave shape corresponding to the protrusion of the terminals and the like. Therefore, since the upper surface of the inner surface of the upper mold can be formed in a flat shape, the manufacturing cost of the upper mold can be reduced. Moreover, if the flexible member mentioned above is used, even if it is a semiconductor module from which a kind differs, an upper metal mold | die can be shared and the manufacturing cost of a semiconductor module can be reduced.

  As described above, it is necessary to design the resin 6 to be sufficiently thin in order to reduce the pressure that the flexible member receives by the resin injection when the resin 6 is injected into the mold. It is. As the height of the flexible member (that is, the thickness of the resin 6) increases, the pressure that the member receives due to the resin injection also increases in accordance with the surface area of the member. Therefore, it is preferable to design the thickness of the resin 6 as thin as possible within a range in which insulation can be secured in order to prevent displacement of a flexible member at the time of resin injection.

<Effect>
The semiconductor module according to the present embodiment includes a circuit pattern 1c provided on one main surface of the substrate 1, a semiconductor element 3 bonded on the circuit pattern 1c, between the circuit pattern 1c and the semiconductor element 3, and / or Alternatively, the substrate 1, the circuit pattern 1 c, the semiconductor element 3, and the metal plate 5 are sealed with a resin 6, and a hole 6 a is formed in the resin 6. The circuit pattern 1c, the semiconductor element 3, or a part of the metal plate 5 is exposed from the hole 6a in plan view.

  Accordingly, when the semiconductor module is electrically connected to the outside, the external connection terminal 8 is inserted into the hole 6a formed in the resin 6, and the circuit pattern 1c, the semiconductor element 3, or the semiconductor element 3 exposed from the hole 6a Electrical connection by contact with the metal plate 5 can be performed. Therefore, since the external connection terminal 8 and the exposed portion of the semiconductor module are in direct contact with each other, it is possible to reduce the inductance at the time of connection and to maintain good electrical characteristics. Furthermore, it is not necessary to provide a metal terminal or the like on the semiconductor module side for electrical connection with the outside, so the number of parts constituting the semiconductor module can be reduced, and accordingly, the manufacturing cost of the semiconductor module is reduced and the size is reduced. And weight reduction.

  Further, since the semiconductor module can be reduced in size and weight, the number of products per packing and transport container can be increased, and the transport cost per unit can be reduced. Further, since solder or the like is not used for connection to the external connection terminal 8, it is possible to reduce the cost when collecting and disassembling the product. Further, the reduction in size and weight described above increases the number of products that can be packaged per packaging material, and the amount of packaging material used per product decreases, so that packaging and packaging costs can be reduced.

  Further, in the semiconductor module according to the present embodiment, the circuit pattern 1c, the semiconductor element 3, or the metal plate 5 exposed from the hole 6a has elasticity.

  Therefore, since the exposed portion of the hole 6a has elasticity, the external force received by the semiconductor module when the external connection terminal 8 inserted into the hole 6a contacts the exposed surface can be relaxed to protect the semiconductor module. It is.

  In the semiconductor module according to the present embodiment, the semiconductor element 3 is a wide band gap semiconductor element.

  In the semiconductor module according to the present embodiment, since the exposed surface of the hole 6a and the external connection terminal 8 are in direct contact for electrical connection, inductance can be reduced, so that surge voltage during operation of the semiconductor module can be reduced. It can be suppressed. Therefore, high speed operation is possible by making the semiconductor element 3 a wide band gap semiconductor element such as a SiC semiconductor element. Moreover, since the semiconductor module in the present embodiment does not use solder or silicone gel for electrical connection between the exposed surface of the hole 6a and the external connection terminal, the restriction on the operating temperature is eased. Therefore, the semiconductor element 3 can be operated at a high temperature by using a wide band gap semiconductor element such as a SiC semiconductor element.

  The semiconductor module connection method in the present embodiment is such that the tip of the external connection terminal 8 is brought into electrical contact with the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a. It is characterized by connecting to.

  Therefore, it is possible to electrically connect to the outside simply by bringing the tip of the external connection terminal 8 into contact with the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a. Compared with a connection method that requires screwing or the like as in the prior art, electrical connection can be easily performed. In addition, since the electrical connection is made by direct contact between the exposed portion of the hole 6a and the external connection terminal 8, it is possible to further reduce the inductance compared to the case where the connection is made through a metal terminal or the like. . Therefore, it is possible to maintain good electrical characteristics when connected to the outside.

  In the semiconductor module connection method according to the present embodiment, the external connection terminal 8 has elasticity, and the circuit pattern 1c exposed from the hole 6a, the semiconductor element 3, or the metal plate 5 is connected to the external connection terminal 8. It is characterized in that it is brought into contact by pressing the tip and is electrically connected to the outside.

  Therefore, in the semiconductor module connection method according to the present embodiment, since the external connection terminal 8 has elasticity, the external force applied to the inner wall surface of the hole 6a and the exposed portion of the hole 6a when the external connection terminal 8 is inserted into the hole 6a. Therefore, stress generated in the semiconductor module can be relaxed. Therefore, it is possible to suppress fluctuations in electrical characteristics caused by stress applied to the semiconductor module.

  Further, in the semiconductor module connection method in the present embodiment, the tip of the external connection terminal 8 is provided with a needle-like projection 8a, and the circuit pattern 1c exposed from the hole 6a, the semiconductor element 3, Alternatively, the metal plate 5 is brought into contact with the needle-like protrusion 8a of the external connection terminal 8 so as to be electrically connected to the outside.

  Therefore, by sticking the needle-like protrusion 8a into the exposed surface of the hole 6a, it is possible to penetrate the oxide film or film on the metal surface and contact the metal intrinsic surface, so that the electrical resistance is low and stable. Connection status is obtained.

<Embodiment 2>
<Configuration>
FIG. 5 shows a cross-sectional view of the semiconductor module in the present embodiment. The semiconductor module in the present embodiment differs from the semiconductor module described in the first embodiment (FIG. 1) in the structure of the holes 6a formed in the resin 6. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

  In the present embodiment, the inner wall surface of the hole 6 a formed in the resin 6 is covered with a flexible cushioning material 7. That is, a flexible cylindrical cushioning material 7 is embedded in the hole 6a. For example, silicone rubber is used as the material of the buffer material 7. Examples of cross-sectional views of the cushioning material 7 used in the present embodiment are shown in FIGS. In the semiconductor module in the present embodiment, the shape of the cylindrical tube hole portion of the buffer material 7 corresponds to the shape of the hole 6a in the first embodiment. For example, the shape of the cylindrical tube hole portion of the buffer material 7 may be a columnar shape (FIG. 6A). Further, the cylinder may have a shape that narrows upward (FIG. 6B) or a shape that narrows downward (FIG. 6C). Further, as shown in FIGS. 6D to 6F, a shape having a protrusion in the tube hole portion, or a shape in which the tube hole portion is pushed and expanded by inserting the external connection terminal 8 may be used. Thus, by devising the shape of the cylindrical hole portion, the external connection terminal 8 inserted into the cylindrical hole portion (that is, the hole 6a) of the cushioning material 7 can be stably held. In addition, it is preferable to provide ribs at both upper and lower ends of the buffer material 7 because the buffer material 7 can be prevented from coming off from the hole 6a.

<Connection method with external connection terminal>
The connection method between the semiconductor module and the external connection terminal 8 in the present embodiment is the same as that in the first embodiment. That is, by inserting the external connection terminal 8 into the hole 6a of FIG. 5, that is, the cylindrical hole portion of the buffer material 7, the semiconductor module is electrically connected to the outside. In the present embodiment, the external connection terminal 8 uses the external connection terminal 8 (FIGS. 3 and 4) described in the first embodiment.

  For example, as shown in FIG. 6 (f), when the cushioning material 7 having a thread groove-like projection formed in the cylindrical hole portion is embedded in the resin 6, the spring structure as shown in FIG. 3 (a). The external connection terminal 8 is inserted into the cylindrical hole portion of the cushioning material 7 while rotating like a screw. In this manner, the external connection terminals 8 can be stably held inside the cushioning material 7 by making the projections of the cylindrical hole portions correspond to the shapes of the external connection terminals 8. Further, by providing a needle-like protrusion 8a at the tip of the external connection terminal 8 shown in FIG. 3A to have a shape as shown in FIG. 4E, the external connection terminal 8 is rotated into the hole 6a. At the time of insertion, the needle-like protrusion 8a is more preferable because the surface oxide or film on the exposed surface of the hole 6a is cut into an arc shape and can contact with the metal intrinsic surface.

  In the semiconductor module according to the present embodiment, the inner wall surface of the hole 6a is covered with a flexible cushioning material 7. Therefore, the external force caused by inserting the external connection terminal 8 into the hole 6 a is absorbed by the buffer material 7. That is, the stress generated in the semiconductor element 3, the metal plate 5, and the wiring pattern 1c located in the vicinity of the hole 6a is suppressed. Therefore, it is possible to suppress fluctuations in electrical characteristics caused by the stress generated in the semiconductor module.

<Manufacturing method>
The manufacturing method of the semiconductor module in this Embodiment is demonstrated using FIG. First, as in the first embodiment, a circuit pattern 1c is formed on one main surface of the substrate 1, and the semiconductor element 3 is bonded onto the circuit pattern 1c with solder 2 or the like. Then, the metal plate 5 is joined by solder between the circuit pattern 1c and the semiconductor element 3 and at predetermined positions between the semiconductor elements 3 (FIG. 7A).

  Next, as shown in FIG. 7B, the cushioning material 7 is disposed at a position corresponding to the hole 6a in FIG. At this time, the circuit pattern 1c, the semiconductor element 3, or the metal plate 5 is exposed from the cylindrical part of the buffer material 7 in a plan view. Further, the buffer material 7 is arranged so that no gap is generated between the buffer material 7 and the exposed portion. In addition, when the upper surface of the inner surface of the upper mold 10b described later is flat, the upper end of the cushioning material 7 is arranged so that the heights thereof are equal.

  Next, the semiconductor module is placed between the lower mold 10a and the upper mold 10b for resin sealing by the transfer molding method (FIG. 7C). At this time, it is assumed that the upper end of each buffer material 7 and the upper surface of the inner surface of the upper mold 10b are in contact with each other without a gap.

  Finally, by injecting the resin 6 into the mold, the substrate 1, the circuit pattern 1 c, the semiconductor element 3, the metal plate 5, and the buffer material 7 are resin-sealed except for the cylindrical hole portion of the buffer material 7. It is stopped (FIG. 7 (d)). At this time, the resin 6 is not injected into the cylindrical cylindrical hole portion of the cushioning material 7 because the lower end of the cushioning material 7 is in contact with the exposed portion without any gap and the upper end is in contact with the upper mold 10b without any gap. is there. Through the above steps, the semiconductor module in the present embodiment is obtained.

<Effect>
The inner wall surface of the hole 6 a provided in the semiconductor module in the present embodiment is covered with a flexible buffer material 7.

  Therefore, the external force caused by inserting the external connection terminal 8 into the hole 6 a is absorbed by the buffer material 7. That is, the stress generated in the semiconductor element 3, the metal plate 5, and the wiring pattern 1c located in the vicinity of the hole 6a is suppressed. Therefore, it is possible to suppress fluctuations in electrical characteristics caused by the stress generated in the semiconductor module.

  The method for manufacturing a semiconductor module in the present embodiment includes a step (a) of forming a circuit pattern 1c on one main surface of the substrate 1, a step (b) of bonding the semiconductor element 3 on the circuit pattern 1c, A step (c) of joining the metal plate 5 between the circuit pattern 1c and the semiconductor element 3 and / or between the semiconductor elements 3, and after the step (c), a flexible cylindrical cushioning material 7 is provided. A step (d) in which the circuit pattern 1c, the semiconductor element 3, or the metal plate 5 is exposed from the cylindrical hole portion in plan view, and the exposed surface and the buffer material 7 are in contact with each other without a gap; After (d), the step of resin-sealing the substrate 1, the circuit pattern 1 c, the semiconductor element 3, the metal plate 5, and the buffer material 7 except for the cylindrical tube hole portion of the buffer material 7 by a transfer molding method ( e).

  Therefore, by placing the cylindrical cushioning material 7 in the portion corresponding to the hole 6a and then performing resin sealing by transfer molding, the cylindrical hole portion of the cushioning material 7 is not resin-sealed. It is possible to form. Further, since the hole 6a is formed by disposing the buffer material 7, the upper surface of the inner surface of the upper mold 10b may be flat when the resin is sealed by the transfer molding method. Therefore, even if the arrangement of the holes 6a is different, the upper mold 10b can be shared, so that the manufacturing cost can be reduced. Furthermore, after manufacture, the cylindrical cushioning material 7 remains in the resin 6 in a state of being embedded in the hole 6a. Therefore, when the external connection terminal 8 is inserted into the hole 6 a, the external force applied to the hole 6 a is absorbed by the buffer material 7. Therefore, it is possible to protect the semiconductor module from external force due to the external connection terminal 8. Moreover, since it is not necessary to remove the buffer material 7 from the resin 6 after the resin sealing, the production efficiency is improved.

<Embodiment 3>
8A and 8B are a cross-sectional view and a plan view, respectively, of the semiconductor module in the present embodiment. The semiconductor module according to the present embodiment has a configuration in which a plurality of cushioning materials 7 are connected to each other by connection members 7 a made of the same material as the cushioning material 7 in the semiconductor module according to the second embodiment (FIG. 5). Since other configurations are the same as those of the semiconductor module according to the second embodiment, description thereof is omitted.

  As shown in FIG. 7B, the connection member 7 a is plate-shaped and is integrally formed with the buffer material 7. In the second embodiment, a plurality of cushioning materials 7 are individually arranged in the manufacturing process of the semiconductor module. However, in this embodiment, the cushioning materials 7 are connected to each other by the connecting members 7a, and therefore all the cushioning materials are used. 7 can be arranged together.

<Effect>
In the manufacturing method of the semiconductor module according to the present embodiment, the circuit pattern 1c, the semiconductor element 3, or the metal plate 5 is exposed from the cylindrical portion of the cylindrical cushioning material 7 having flexibility in a plan view. In the step of arranging the exposed surface and the cushioning material 7 so as to be in contact with each other without a gap, the cushioning material 7 to be arranged is plural, and the cushioning material 7 is connected to each other by a connecting member 7a made of the same material as the cushioning material 7. It is characterized by being.

  Accordingly, since the plurality of cushioning materials 7 are connected by the connecting member 7a, the cushioning materials 7 can be arranged in a lump. Therefore, improvement in positional accuracy and production efficiency when the cushioning materials 7 are arranged. Improvement is expected.

<Embodiment 4>
A method for connecting semiconductor modules in the present embodiment will be described. The description will be made using the semiconductor module of the first embodiment (FIG. 1). First, liquid metal is poured into a hole 6 a formed in the resin 6. The liquid metal is, for example, indium, gallium, or an alloy thereof. Moreover, you may use a low melting-point solder as a liquid metal. Next, the external connection terminal 8 is inserted into the hole 6a and brought into contact with the liquid metal. That is, even if the external connection terminal 8 is not in contact with the exposed portion of the hole 6a, if the external connection terminal 8 is in contact with the liquid metal, the semiconductor module and the external connection terminal 8 are electrically connected via the liquid metal. Is done.

<Effect>
The connection method of the semiconductor module in the present embodiment is characterized in that a liquid metal is poured into the hole 6a and an external connection terminal 8 is brought into contact with the liquid metal to be electrically connected to the outside.

  Accordingly, even if the external connection terminal 8 is not brought into contact with the circuit pattern 1c, the semiconductor element 3 or the metal plate 5 exposed from the hole 6a formed in the resin 6, the external connection terminal 8 is applied to the liquid metal poured into the hole 6a. If they are brought into contact, the semiconductor module can be electrically connected to the outside. Therefore, it is possible to reduce the stress generated in the semiconductor module by inserting the external connection terminal 8 into the hole 6a.

  It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

  DESCRIPTION OF SYMBOLS 1 Board | substrate, 1a Metal base plate, 1b Insulation layer, 1c Circuit pattern, 2 Solder, 3 Semiconductor element, 5 Metal plate, 6 Mold resin, 6a Hole, 7 Buffer material, 7a Connection member, 8 External connection terminal, 8a Needle Shaped protrusion, 10a lower mold, 10b upper mold.

Claims (10)

  1. A circuit pattern provided on one main surface of the substrate;
    A semiconductor element bonded on the circuit pattern;
    A metal plate between the circuit pattern and the semiconductor element and / or between the semiconductor elements;
    With
    The substrate, the circuit pattern, the semiconductor element and the metal plate are sealed with resin,
    A hole is formed in the resin,
    A part of the circuit pattern, the semiconductor element, or the metal plate is exposed from the hole in a plan view,
    Semiconductor module.
  2. The inner wall surface of the hole is covered with a flexible cushioning material,
    The semiconductor module according to claim 1.
  3. The circuit pattern exposed from the hole, the semiconductor element, or the metal plate has elasticity,
    The semiconductor module according to claim 1 or 2.
  4. The semiconductor element is a wide band gap semiconductor element,
    The semiconductor module in any one of Claims 1-3.
  5. It is a connection method of the semiconductor module in any one of Claims 1-4,
    The circuit pattern exposed from the hole, the semiconductor element, or the metal plate is electrically connected to the outside by contacting the tip of an external connection terminal,
    Semiconductor module connection method.
  6. The external connection terminal has elasticity,
    The circuit pattern exposed from the hole, the semiconductor element, or the metal plate is brought into contact by pressing the tip of the external connection terminal, and is electrically connected to the outside.
    The method for connecting semiconductor modules according to claim 5.
  7. The tip of the external connection terminal is provided with a needle-like protrusion,
    The circuit pattern exposed from the hole, the semiconductor element, or the metal plate is brought into contact with the needle-like protrusion of the external connection terminal by being pierced to be electrically connected to the outside. ,
    The method for connecting a semiconductor module according to claim 5.
  8. It is a connection method of the semiconductor module in any one of Claims 1-4,
    Pour liquid metal into the hole,
    By connecting an external connection terminal to the liquid metal, it is electrically connected to the outside,
    Semiconductor module connection method.
  9. (A) forming a circuit pattern on one main surface of the substrate;
    (B) bonding a semiconductor element on the circuit pattern;
    (C) joining a metal plate between the circuit pattern and the semiconductor element and / or between the semiconductor elements;
    (D) After the step (c), the circuit pattern, the semiconductor element, or the metal plate is exposed from the cylindrical tube hole portion of the cylindrical buffer material having flexibility in a plan view. And a step of arranging the exposed surface and the cushioning material so as to contact each other without a gap,
    (E) After the step (d), the substrate, the circuit pattern, the semiconductor element, the metal plate, and the buffer material are removed by a transfer molding method except for the cylindrical tube hole portion of the buffer material. A step of resin sealing;
    Comprising
    Manufacturing method of semiconductor module.
  10. In the step (d), a plurality of the buffer materials are arranged, and the buffer materials are connected to each other by a connection member made of the same material as the buffer material.
    A method for manufacturing a semiconductor module according to claim 9.
JP2012278126A 2012-12-20 2012-12-20 Semiconductor module, manufacturing method thereof and connection method thereof Active JP6016611B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012278126A JP6016611B2 (en) 2012-12-20 2012-12-20 Semiconductor module, manufacturing method thereof and connection method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012278126A JP6016611B2 (en) 2012-12-20 2012-12-20 Semiconductor module, manufacturing method thereof and connection method thereof

Publications (2)

Publication Number Publication Date
JP2014123618A true JP2014123618A (en) 2014-07-03
JP6016611B2 JP6016611B2 (en) 2016-10-26

Family

ID=51403900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012278126A Active JP6016611B2 (en) 2012-12-20 2012-12-20 Semiconductor module, manufacturing method thereof and connection method thereof

Country Status (1)

Country Link
JP (1) JP6016611B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016025207A (en) * 2014-07-18 2016-02-08 Towa株式会社 Manufacturing method of resin-sealed electronic component, tabular member with bump electrode, resin-sealed electronic component, and manufacturing method of tabular member with bump electrode
JP2016538546A (en) * 2013-11-14 2016-12-08 キストラー ホールディング アクチエンゲゼルシャフト Piezoelectric power sensor having an electrical connection between an electrode and a contact pin
JP2016219554A (en) * 2015-05-18 2016-12-22 富士電機株式会社 Semiconductor device, metal member and method of manufacturing semiconductor device
US9728426B2 (en) 2014-04-24 2017-08-08 Towa Corporation Method for producing resin-encapsulated electronic component, bump-formed plate-like member, resin-encapsulated electronic component, and method for producing bump-formed plate-like member
DE102018204473A1 (en) 2017-06-21 2018-12-27 Mitsubishi Electric Corporation Semiconductor device

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028048U (en) * 1988-06-24 1990-01-18
JPH1167975A (en) * 1997-08-15 1999-03-09 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof
JP2001196532A (en) * 2000-01-12 2001-07-19 Mitsubishi Electric Corp Semiconductor device
US20070090473A1 (en) * 2003-05-26 2007-04-26 Thomas Engling Microelectromechanical component and method for the production thereof
JP2007184315A (en) * 2006-01-04 2007-07-19 Hitachi Ltd Resin-sealed power semiconductor module
JP2008294275A (en) * 2007-05-25 2008-12-04 Mitsubishi Electric Corp Power semiconductor device
JP2009059923A (en) * 2007-08-31 2009-03-19 Mitsubishi Electric Corp Semiconductor device
JP2009520366A (en) * 2005-12-16 2009-05-21 フリースケール セミコンダクター インコーポレイテッド Multilayer molded package and method for forming the same
JP2010027814A (en) * 2008-07-18 2010-02-04 Mitsubishi Electric Corp Power semiconductor device
JP2010129550A (en) * 2008-11-25 2010-06-10 Mitsubishi Electric Corp Power semiconductor module
JP2010129671A (en) * 2008-11-26 2010-06-10 Mitsubishi Electric Corp Power semiconductor module
JP2010186931A (en) * 2009-02-13 2010-08-26 Mitsubishi Electric Corp Power semiconductor device
JP2011066449A (en) * 2010-12-20 2011-03-31 Fujikura Ltd Method for manufacturing passing wiring substrate, method for manufacturing complex substrate, and method for manufacturing electronic device using passing wiring substrate and complex substrate formed by those manufacturing methods
JP2011138998A (en) * 2010-01-04 2011-07-14 Mitsubishi Electric Corp Semiconductor device
JP2011187564A (en) * 2010-03-05 2011-09-22 Keihin Corp Semiconductor device
JP2011233753A (en) * 2010-04-28 2011-11-17 Mitsubishi Electric Corp Semiconductor device and semiconductor device manufacturing method
JP2012004226A (en) * 2010-06-15 2012-01-05 Mitsubishi Electric Corp Power semiconductor device
WO2012144070A1 (en) * 2011-04-22 2012-10-26 三菱電機株式会社 Semiconductor device
US20130215585A1 (en) * 2010-11-09 2013-08-22 Mitsubishi Electric Corporation Package

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028048U (en) * 1988-06-24 1990-01-18
JPH1167975A (en) * 1997-08-15 1999-03-09 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof
JP2001196532A (en) * 2000-01-12 2001-07-19 Mitsubishi Electric Corp Semiconductor device
US20070090473A1 (en) * 2003-05-26 2007-04-26 Thomas Engling Microelectromechanical component and method for the production thereof
JP2009520366A (en) * 2005-12-16 2009-05-21 フリースケール セミコンダクター インコーポレイテッド Multilayer molded package and method for forming the same
JP2007184315A (en) * 2006-01-04 2007-07-19 Hitachi Ltd Resin-sealed power semiconductor module
JP2008294275A (en) * 2007-05-25 2008-12-04 Mitsubishi Electric Corp Power semiconductor device
JP2009059923A (en) * 2007-08-31 2009-03-19 Mitsubishi Electric Corp Semiconductor device
JP2010027814A (en) * 2008-07-18 2010-02-04 Mitsubishi Electric Corp Power semiconductor device
JP2010129550A (en) * 2008-11-25 2010-06-10 Mitsubishi Electric Corp Power semiconductor module
JP2010129671A (en) * 2008-11-26 2010-06-10 Mitsubishi Electric Corp Power semiconductor module
JP2010186931A (en) * 2009-02-13 2010-08-26 Mitsubishi Electric Corp Power semiconductor device
JP2011138998A (en) * 2010-01-04 2011-07-14 Mitsubishi Electric Corp Semiconductor device
JP2011187564A (en) * 2010-03-05 2011-09-22 Keihin Corp Semiconductor device
JP2011233753A (en) * 2010-04-28 2011-11-17 Mitsubishi Electric Corp Semiconductor device and semiconductor device manufacturing method
JP2012004226A (en) * 2010-06-15 2012-01-05 Mitsubishi Electric Corp Power semiconductor device
US20130215585A1 (en) * 2010-11-09 2013-08-22 Mitsubishi Electric Corporation Package
JP2011066449A (en) * 2010-12-20 2011-03-31 Fujikura Ltd Method for manufacturing passing wiring substrate, method for manufacturing complex substrate, and method for manufacturing electronic device using passing wiring substrate and complex substrate formed by those manufacturing methods
WO2012144070A1 (en) * 2011-04-22 2012-10-26 三菱電機株式会社 Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016538546A (en) * 2013-11-14 2016-12-08 キストラー ホールディング アクチエンゲゼルシャフト Piezoelectric power sensor having an electrical connection between an electrode and a contact pin
US9728426B2 (en) 2014-04-24 2017-08-08 Towa Corporation Method for producing resin-encapsulated electronic component, bump-formed plate-like member, resin-encapsulated electronic component, and method for producing bump-formed plate-like member
JP2016025207A (en) * 2014-07-18 2016-02-08 Towa株式会社 Manufacturing method of resin-sealed electronic component, tabular member with bump electrode, resin-sealed electronic component, and manufacturing method of tabular member with bump electrode
US9580827B2 (en) 2014-07-18 2017-02-28 Towa Corporation Method for producing electronic component, bump-formed plate-like member, electronic component, and method for producing bump-formed plate-like member
JP2016219554A (en) * 2015-05-18 2016-12-22 富士電機株式会社 Semiconductor device, metal member and method of manufacturing semiconductor device
US10199314B2 (en) 2015-05-18 2019-02-05 Fuji Electric Co., Ltd. Semiconductor device, metal member, and method of manufacturing semiconductor device
DE102018204473A1 (en) 2017-06-21 2018-12-27 Mitsubishi Electric Corporation Semiconductor device
US10468372B2 (en) 2017-06-21 2019-11-05 Mitsubishi Electric Corporation Semiconductor apparatus

Also Published As

Publication number Publication date
JP6016611B2 (en) 2016-10-26

Similar Documents

Publication Publication Date Title
JP5350804B2 (en) Power semiconductor device
DE102009011233B4 (en) Method for producing a semiconductor device
JP4576448B2 (en) Power semiconductor device
JP4634498B2 (en) Power semiconductor module
US20100127383A1 (en) Power semiconductor module
US8952520B2 (en) Power semiconductor device
DE10221891A1 (en) Semiconductor device
JP2008227131A (en) Semiconductor device and its manufacturing method
CN102456652B (en) Power semiconductor arrangement
US7884455B2 (en) Semiconductor device
JP2010129797A (en) Semiconductor device for power
JP4022758B2 (en) Semiconductor device
TWI404177B (en) Electric power semiconductor circuit device and method for making same
TW201250962A (en) Semiconductor device and method for manufacturing semiconductor device
US20100134979A1 (en) Power semiconductor apparatus
JP2014099547A (en) Power semiconductor module and method of manufacturing the same
JPWO2013121491A1 (en) Semiconductor device and manufacturing method thereof
JP2013016629A (en) Semiconductor module
US20140029201A1 (en) Power package module and manufacturing method thereof
JP5341337B2 (en) Semiconductor device and manufacturing method thereof
JP4900165B2 (en) Power semiconductor module
JP2009064908A (en) Wiring board and its manufacturing method
KR20140134628A (en) Power electronics switching device, and an arrangement comprising the same
JP5279632B2 (en) Semiconductor module
CN101263596A (en) Reversible-multiple footprint package and method of manufacturing

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141111

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150818

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150917

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160315

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160407

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160830

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160927

R150 Certificate of patent or registration of utility model

Ref document number: 6016611

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250