JP6014408B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
- Publication number
- JP6014408B2 JP6014408B2 JP2012174525A JP2012174525A JP6014408B2 JP 6014408 B2 JP6014408 B2 JP 6014408B2 JP 2012174525 A JP2012174525 A JP 2012174525A JP 2012174525 A JP2012174525 A JP 2012174525A JP 6014408 B2 JP6014408 B2 JP 6014408B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- film
- plasma
- dielectric ring
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012174525A JP6014408B2 (ja) | 2012-08-07 | 2012-08-07 | プラズマ処理装置及びプラズマ処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012174525A JP6014408B2 (ja) | 2012-08-07 | 2012-08-07 | プラズマ処理装置及びプラズマ処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014036026A JP2014036026A (ja) | 2014-02-24 |
| JP2014036026A5 JP2014036026A5 (enExample) | 2015-10-08 |
| JP6014408B2 true JP6014408B2 (ja) | 2016-10-25 |
Family
ID=50284858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012174525A Active JP6014408B2 (ja) | 2012-08-07 | 2012-08-07 | プラズマ処理装置及びプラズマ処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6014408B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9805951B1 (en) * | 2016-04-15 | 2017-10-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of integration process for metal CMP |
| WO2019180889A1 (ja) | 2018-03-22 | 2019-09-26 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、及び静電シールド |
| WO2021124470A1 (ja) * | 2019-12-18 | 2021-06-24 | 株式会社日立ハイテク | プラズマ処理装置 |
| JP7700637B2 (ja) * | 2021-10-29 | 2025-07-01 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
| JP2003152063A (ja) * | 2001-11-09 | 2003-05-23 | Applied Materials Inc | 静電チャック及び半導体製造装置 |
| JP5492578B2 (ja) * | 2003-04-24 | 2014-05-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4992389B2 (ja) * | 2006-11-06 | 2012-08-08 | 東京エレクトロン株式会社 | 載置装置、プラズマ処理装置及びプラズマ処理方法 |
| JP4659771B2 (ja) * | 2007-02-13 | 2011-03-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5227264B2 (ja) * | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置,プラズマ処理方法,プログラム |
-
2012
- 2012-08-07 JP JP2012174525A patent/JP6014408B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014036026A (ja) | 2014-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4421305B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| KR100929449B1 (ko) | 기판 처리 장치 및 포커스 링 | |
| CN102208322B (zh) | 等离子体处理装置和半导体装置的制造方法 | |
| US8651049B2 (en) | Plasma processing apparatus | |
| TW202130226A (zh) | 載置台及電漿處理裝置 | |
| TWI614791B (zh) | 電漿處理裝置 | |
| US8529730B2 (en) | Plasma processing apparatus | |
| KR20200028288A (ko) | 플라스마 처리 장치 | |
| JP6014408B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| JP4868649B2 (ja) | プラズマ処理装置 | |
| KR20120049823A (ko) | 플라즈마 처리 장치 | |
| CN109841476B (zh) | 半导体制造装置用的部件以及半导体制造装置 | |
| JPH10275694A (ja) | プラズマ処理装置及び処理方法 | |
| KR100889433B1 (ko) | 플라즈마 처리 장치 | |
| JP5586286B2 (ja) | プラズマ処理装置 | |
| JP7503951B2 (ja) | エッチング処理装置、石英部材及びプラズマ処理方法 | |
| JP4659771B2 (ja) | プラズマ処理装置 | |
| US8974600B2 (en) | Deposit protection cover and plasma processing apparatus | |
| US20050146277A1 (en) | Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system | |
| JP7209508B2 (ja) | プロセス装置 | |
| CN114512389A (zh) | 紧固结构和紧固方法以及等离子体处理装置 | |
| JP7039688B2 (ja) | プラズマ処理装置 | |
| JP4352064B2 (ja) | プラズマ処理方法 | |
| TW202435313A (zh) | 電漿處理裝置及基板處理方法 | |
| CN116072497A (zh) | 基板处理装置和基板处理方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150731 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150731 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150731 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160530 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160607 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160808 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160830 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160926 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6014408 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |