JP6011552B2 - ヒートシンク付パワーモジュール用基板及びその製造方法 - Google Patents

ヒートシンク付パワーモジュール用基板及びその製造方法 Download PDF

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Publication number
JP6011552B2
JP6011552B2 JP2014001720A JP2014001720A JP6011552B2 JP 6011552 B2 JP6011552 B2 JP 6011552B2 JP 2014001720 A JP2014001720 A JP 2014001720A JP 2014001720 A JP2014001720 A JP 2014001720A JP 6011552 B2 JP6011552 B2 JP 6011552B2
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Japan
Prior art keywords
heat sink
power module
module substrate
substrate
ratio
Prior art date
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JP2014001720A
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English (en)
Japanese (ja)
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JP2015130430A (ja
JP2015130430A5 (enExample
Inventor
智哉 大開
智哉 大開
宗太郎 大井
宗太郎 大井
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2014001720A priority Critical patent/JP6011552B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to EP14852005.9A priority patent/EP3057125B1/en
Priority to PCT/JP2014/076952 priority patent/WO2015053316A1/ja
Priority to CN201480050150.1A priority patent/CN105580131B/zh
Priority to US15/028,173 priority patent/US10032648B2/en
Priority to KR1020167011962A priority patent/KR102232098B1/ko
Priority to TW103135202A priority patent/TWI635583B/zh
Publication of JP2015130430A publication Critical patent/JP2015130430A/ja
Publication of JP2015130430A5 publication Critical patent/JP2015130430A5/ja
Application granted granted Critical
Publication of JP6011552B2 publication Critical patent/JP6011552B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2014001720A 2013-10-10 2014-01-08 ヒートシンク付パワーモジュール用基板及びその製造方法 Active JP6011552B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014001720A JP6011552B2 (ja) 2014-01-08 2014-01-08 ヒートシンク付パワーモジュール用基板及びその製造方法
PCT/JP2014/076952 WO2015053316A1 (ja) 2013-10-10 2014-10-08 ヒートシンク付パワーモジュール用基板及びその製造方法
CN201480050150.1A CN105580131B (zh) 2013-10-10 2014-10-08 自带散热器的功率模块用基板及其制造方法
US15/028,173 US10032648B2 (en) 2013-10-10 2014-10-08 Method of manufacturing power-module substrate with heat-sink
EP14852005.9A EP3057125B1 (en) 2013-10-10 2014-10-08 Substrate for heat sink-equipped power module, and production method for same
KR1020167011962A KR102232098B1 (ko) 2013-10-10 2014-10-08 히트 싱크가 부착된 파워 모듈용 기판 및 그 제조 방법
TW103135202A TWI635583B (zh) 2013-10-10 2014-10-09 Substrate with heat sink power module and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014001720A JP6011552B2 (ja) 2014-01-08 2014-01-08 ヒートシンク付パワーモジュール用基板及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016177373A Division JP2017011293A (ja) 2016-09-12 2016-09-12 ヒートシンク付パワーモジュール用基板及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015130430A JP2015130430A (ja) 2015-07-16
JP2015130430A5 JP2015130430A5 (enExample) 2016-02-12
JP6011552B2 true JP6011552B2 (ja) 2016-10-19

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JP2014001720A Active JP6011552B2 (ja) 2013-10-10 2014-01-08 ヒートシンク付パワーモジュール用基板及びその製造方法

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JP (1) JP6011552B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6717238B2 (ja) * 2017-03-07 2020-07-01 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
JP6776953B2 (ja) * 2017-03-07 2020-10-28 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
JP6946107B2 (ja) * 2017-08-04 2021-10-06 デンカ株式会社 パワーモジュール
WO2019038964A1 (ja) * 2017-08-21 2019-02-28 株式会社村田製作所 電流センサ
JP7428034B2 (ja) * 2020-03-23 2024-02-06 三菱マテリアル株式会社 ヒートシンク付絶縁回路基板の製造方法
US20230154808A1 (en) * 2020-10-23 2023-05-18 Mitsubishi Electric Corporation Semiconductor apparatus and method for manufacturing semiconductor apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3155874B2 (ja) * 1993-10-19 2001-04-16 電気化学工業株式会社 回路基板
JP3180677B2 (ja) * 1996-08-22 2001-06-25 三菱マテリアル株式会社 ヒートシンク付セラミック回路基板
JP3792180B2 (ja) * 2002-07-10 2006-07-05 電気化学工業株式会社 放熱部品の製造方法
JP2008235852A (ja) * 2007-02-23 2008-10-02 Hitachi Metals Ltd セラミックス基板及びこれを用いた半導体モジュール
JP4683043B2 (ja) * 2007-12-28 2011-05-11 富士電機システムズ株式会社 半導体装置の製造方法
JP6012990B2 (ja) * 2012-03-19 2016-10-25 日本軽金属株式会社 放熱器一体型基板の製造方法
JP5966512B2 (ja) * 2012-03-29 2016-08-10 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板の製造方法

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