JP6008300B2 - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- JP6008300B2 JP6008300B2 JP2013550111A JP2013550111A JP6008300B2 JP 6008300 B2 JP6008300 B2 JP 6008300B2 JP 2013550111 A JP2013550111 A JP 2013550111A JP 2013550111 A JP2013550111 A JP 2013550111A JP 6008300 B2 JP6008300 B2 JP 6008300B2
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- 238000003384 imaging method Methods 0.000 title claims description 125
- 238000001514 detection method Methods 0.000 claims description 81
- 230000003595 spectral effect Effects 0.000 claims description 45
- 230000002093 peripheral effect Effects 0.000 claims description 30
- 238000004611 spectroscopical analysis Methods 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 9
- 239000003086 colorant Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/13—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with multiple sensors
- H04N23/16—Optical arrangements associated therewith, e.g. for beam-splitting or for colour correction
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Spectrometry And Color Measurement (AREA)
Description
以下、本発明による撮像装置の第1の実施形態を説明する。図2は、本実施形態の撮像装置の模式的な断面構造の一部を示している。図2に示すように、撮像装置101は、撮像素子10と、透明層11と、複数の分光部12とを備える。
以下、本発明による撮像装置の第2の実施形態を説明する。図15は、本実施形態の撮像装置102における光検出部および分光部の配置を示している。撮像装置102は、4つの色を分離して検出することが可能である。このために、撮像装置102は、撮像素子10と、透明層11と、複数の分光部12A、12Bとを備える。
11 透明層
12、12A、12B 分光部
13 0次回折光
14 ±1次回折光
15a、15b 光検出部
20 撮像面
16 レンズ
Claims (7)
- 受光面を有する複数の光検出部であって、第1の方向および前記第1の方向と異なる第2の方向に沿って2次元に配列されることにより、前記複数の光検出部の受光面が撮像面を構成している複数の光検出部と、
入射面および出射面を有し、前記出射面が前記撮像面と対向するように配置された透明層と、
前記透明層の屈折率よりも大きい屈折率を有し、前記透明層内であって、前記撮像面と平行な配列面において、2次元に配列された複数の分光部と、
を備え、
各分光部および前記各分光部に隣接した前記透明層の部分を透過した光による0次回折光および±1次回折光が前記複数の光検出部のうち異なる光検出部にそれぞれ入射し、
所定の方向に隣接する2つの分光部の間隔は、前記撮像面の中央側よりも周辺側の方が小さく、
前記複数の分光部は、前記第1の方向および第2の方向に沿って2次元に配置されており、
前記各分光部は、前記第1の方向よりも前記第2の方向に大きい厚さを有する、撮像装置。 - 前記複数の分光部のそれぞれは、前記透明層内において、前記入射面と前記出射面とが対向する方向に長手を有する柱状形状または板状形状を有している請求項1に記載の撮像装置。
- 前記第1の方向に隣接する2つの分光部の間隔は、前記撮像面の中央側より周辺側の方が小さい請求項1に記載の撮像装置。
- 前記第2の方向に隣接する2つの分光部の間隔は、前記撮像面の中央側より周辺側の方が小さい請求項3に記載の撮像装置。
- 前記撮像面の中央を中心とする円の半径方向において隣接する2つの分光部の間隔は、前記撮像面の中央側より周辺側の方が小さい請求項1に記載の撮像装置。
- 前記入射面から入射し、前記各光検出部において前記受光面の中央に入射する光線は、前記各光検出部に対応する分光部の、前記入射面と前記出射面とが対向する方向における中央よりも光検出部側を通過する請求項1から5のいずれかに記載の撮像装置。
- 前記複数の分光部は、複数の第1種類の分光部と複数の第2種類の分光部とを含み、前記複数の第1種類の分光部と前記複数の第2種類の分光部とは互いに異なる波長帯域の光を回折する請求項1から6のいずれかに記載の撮像装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011276969 | 2011-12-19 | ||
JP2011276969 | 2011-12-19 | ||
PCT/JP2012/008066 WO2013094178A1 (ja) | 2011-12-19 | 2012-12-18 | 撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013094178A1 JPWO2013094178A1 (ja) | 2015-04-27 |
JP6008300B2 true JP6008300B2 (ja) | 2016-10-19 |
Family
ID=48668096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013550111A Expired - Fee Related JP6008300B2 (ja) | 2011-12-19 | 2012-12-18 | 撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9496300B2 (ja) |
JP (1) | JP6008300B2 (ja) |
CN (1) | CN103477436B (ja) |
WO (1) | WO2013094178A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016115815A (ja) * | 2014-12-15 | 2016-06-23 | キヤノン株式会社 | 撮像装置および撮像システム |
KR102561097B1 (ko) * | 2015-12-22 | 2023-07-28 | 삼성전자주식회사 | 색분리 소자 어레이, 이를 포함한 이미지 센서 및 전자 장치 |
JP6646830B2 (ja) * | 2016-03-30 | 2020-02-14 | パナソニックIpマネジメント株式会社 | 光検出装置および光検出システム |
JP6707105B2 (ja) * | 2018-04-17 | 2020-06-10 | 日本電信電話株式会社 | カラー撮像素子および撮像装置 |
JP7265195B2 (ja) * | 2018-04-17 | 2023-04-26 | 日本電信電話株式会社 | カラー撮像素子および撮像装置 |
CN110767732B (zh) * | 2019-10-31 | 2022-04-05 | 昆山国显光电有限公司 | 显示装置 |
CN116368407A (zh) * | 2020-10-12 | 2023-06-30 | 日本电信电话株式会社 | 摄像元件和摄像装置 |
EP4131947B1 (en) | 2021-08-02 | 2024-04-17 | Imec VZW | An imaging system and a method for acquisition of multi-spectral images |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3551437B2 (ja) | 1992-10-29 | 2004-08-04 | ソニー株式会社 | 固体撮像装置 |
US5701005A (en) | 1995-06-19 | 1997-12-23 | Eastman Kodak Company | Color separating diffractive optical array and image sensor |
JP3430071B2 (ja) * | 1999-06-02 | 2003-07-28 | シャープ株式会社 | マスク作製方法 |
EP1107316A3 (en) * | 1999-12-02 | 2004-05-19 | Nikon Corporation | Solid-state image sensor, production method of the same and digital camera |
JP2003018476A (ja) | 2001-07-02 | 2003-01-17 | Dainippon Printing Co Ltd | 撮像装置 |
JP4075669B2 (ja) * | 2003-04-03 | 2008-04-16 | ソニー株式会社 | 固体撮像素子 |
JP2005079338A (ja) * | 2003-08-29 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 固体撮像装置とその製造方法 |
JP4419662B2 (ja) | 2004-04-21 | 2010-02-24 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
KR100659503B1 (ko) * | 2004-07-27 | 2006-12-20 | 삼성전자주식회사 | 광감도를 개선한 이미지 센서 |
WO2009019818A1 (ja) | 2007-08-06 | 2009-02-12 | Panasonic Corporation | 撮像用光検出装置 |
CN101779288B (zh) * | 2008-06-18 | 2012-05-23 | 松下电器产业株式会社 | 固体摄像装置 |
JP2010062438A (ja) * | 2008-09-05 | 2010-03-18 | Toshiba Corp | 固体撮像装置およびその設計方法 |
JP5331107B2 (ja) * | 2008-12-19 | 2013-10-30 | パナソニック株式会社 | 撮像装置 |
JP5296077B2 (ja) | 2009-01-14 | 2013-09-25 | パナソニック株式会社 | 撮像装置 |
TWI425629B (zh) * | 2009-03-30 | 2014-02-01 | Sony Corp | 固態影像拾取裝置及其製造方法,影像拾取裝置及電子裝置 |
US20110164156A1 (en) | 2009-07-24 | 2011-07-07 | Masao Hiramoto | Image pickup device and solid-state image pickup element |
-
2012
- 2012-12-18 US US14/008,750 patent/US9496300B2/en not_active Expired - Fee Related
- 2012-12-18 WO PCT/JP2012/008066 patent/WO2013094178A1/ja active Application Filing
- 2012-12-18 JP JP2013550111A patent/JP6008300B2/ja not_active Expired - Fee Related
- 2012-12-18 CN CN201280015736.5A patent/CN103477436B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9496300B2 (en) | 2016-11-15 |
CN103477436B (zh) | 2017-05-17 |
US20140124650A1 (en) | 2014-05-08 |
CN103477436A (zh) | 2013-12-25 |
WO2013094178A1 (ja) | 2013-06-27 |
JPWO2013094178A1 (ja) | 2015-04-27 |
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