JP5995636B2 - Support jig for semiconductor wafer plating - Google Patents

Description

  The present invention relates to a support jig for plating a semiconductor wafer used when a thin semiconductor wafer having a circuit pattern formed on the surface thereof is immersed in a plating solution for plating.

  Conventionally, when a thin semiconductor wafer having a circuit pattern formed on the surface is plated, the semiconductor wafer is immersed in a plating solution in a plating tank (not shown), and the circuit pattern on the surface of the immersed semiconductor wafer is applied to the plating solution. Collisions are made quickly, and the plating process is quickly applied to the circuit pattern of the semiconductor wafer (see Patent Documents 1, 2, 3, and 4).

  From the viewpoint of adapting to a thin semiconductor package, the semiconductor wafer is formed thin, for example, to a thickness of 100 μm or less, and is characterized by being fragile and easily bent and difficult to handle. On the surface of the semiconductor wafer, circuit patterns are formed in a multilayer structure on all surfaces including the peripheral edge.

JP 2010-109298 A JP 2008-196055 A JP 2003-226997 A Japanese Patent Laid-Open No. 05-308075

  A conventional thin semiconductor wafer having a thickness of 100 μm or less is plated as described above, but has a low strength. Therefore, when the plating solution collides quickly, there is a high possibility that it will be broken and damaged by impact. In order to solve such a problem, a method has been proposed in which a protective tape is adhered to the back surface of a thin semiconductor wafer to improve the strength of the semiconductor wafer.

  However, if the protective tape is simply adhered to the back surface of the semiconductor wafer, it will be bent and deformed, making handling difficult. Although it is possible to prevent damage other than the peripheral edge of the semiconductor wafer, it is difficult to prevent the chipping by protecting the fragile peripheral edge of the semiconductor wafer, which will damage the circuit pattern on the peripheral edge of the surface. It will be. Furthermore, when the circuit pattern is formed in a multilayer structure on the surface of the semiconductor wafer, the peripheral edge of the semiconductor wafer is contaminated with a resist solution or the like. If the contaminated peripheral edge touches the plating solution, the plating process is adversely affected. Will be affected.

  The present invention has been made in view of the above, facilitating the handling of a thin semiconductor wafer plated with a plating solution, protecting the brittle peripheral portion of the semiconductor wafer and preventing chipping, and the peripheral edge of the semiconductor wafer. It is an object of the present invention to provide a support jig for plating a semiconductor wafer that is less likely to adversely affect the plating process due to contamination of the portion.

In the present invention, in order to solve the above problems, when a semiconductor wafer having a thickness of 100 μm or less having a circuit pattern formed on the surface is immersed in a plating solution, the back surface and the peripheral edge of the semiconductor wafer are protected. ,
A hollow support made of a resin having a diameter larger than that of the semiconductor wafer, an elastic holding layer supported by the support to cover the hollow portion of the support, and holding the semiconductor wafer from the back side thereof, and at least an elastic holding layer An adhesive ring that is adhered to the surface of the semiconductor wafer and is adhered to the peripheral edge of the surface of the semiconductor wafer held by the elastic holding layer, and the adhesive ring is opposed to the surface of the elastic holding layer from the surface peripheral edge of the semiconductor wafer. It is characterized in that it is formed from a material and an adhesive material that adheres to the opposing surface of the support base material and adheres from the peripheral edge of the surface of the semiconductor wafer to the surface of the elastic holding layer.

  The support is a dicing frame that surrounds the semiconductor wafer, the elastic holding layer is a plating masking adhesive film that adheres to the back surface of the dicing frame, the thickness of the support base is 20 to 200 μm, and the adhesive material is The thickness of the silicone-based adhesive material can be 20 to 100 μm.

  Further, the support is divided into an inner ring having a diameter larger than that of the semiconductor wafer and an outer ring that is detachably fitted to the inner ring from the outside, and the periphery of the elastic holding layer is formed on the inner ring and the outer ring. The thickness of the supporting base material can be set to 20 to 200 μm, and the thickness of the pressure-sensitive adhesive material can be set to 20 to 100 μm using a silicone-based pressure-sensitive adhesive material.

  Here, the semiconductor wafer in the claims includes types of φ200, 300, 450 mm, etc., but is not particularly limited. In addition, there is a type in which the peripheral portion is thick and the other portions are thin, but there is no particular limitation. The elastic holding layer may be transparent, opaque, or translucent. This elastic holding layer includes at least a commercially available plating masking adhesive film and a dicing film. The elastic holding layer may or may not have weak adhesiveness. Furthermore, the dicing frame may be an existing type or a newly manufactured type as long as it is made of resin.

  According to the present invention, since the elastic holding layer protects the back surface of the semiconductor wafer and suppresses the bending, even if the plating solution collides with the circuit pattern of the semiconductor wafer quickly, the possibility of the semiconductor wafer breaking can be eliminated. it can. Further, if the support of the plating support jig is operated instead of the semiconductor wafer, the semiconductor wafer is less likely to be bent and deformed. Further, since the peripheral portion of the semiconductor wafer is protected by being sandwiched between the adhesive ring and the elastic holding layer, chipping of the peripheral portion of the semiconductor wafer can be prevented. Furthermore, even if the front and back surfaces of the peripheral edge of the semiconductor wafer are dirty, the adhesive ring covers the dirty peripheral edge, so that infiltration of the plating solution into the peripheral edge can be restricted.

  According to the present invention, it is possible to facilitate handling of a thin semiconductor wafer plated with a plating solution, and to protect a fragile peripheral edge of the semiconductor wafer and prevent chipping. Further, it is possible to reduce the adverse effect on the plating process due to the contamination of the peripheral edge of the semiconductor wafer.

  According to the second aspect of the present invention, since an existing dicing frame can be used, it can be automated or handled by an existing apparatus, and if the adhesive ring is peeled off, it is plated directly in the dicing process. Support jigs can be handled. Moreover, since the thickness of the support base material of an adhesion ring shall be 20-200 micrometers and the thickness of an adhesive material shall be 20-100 micrometers, the support jig for plating can be used repeatedly, ensuring intensity | strength.

  Moreover, since the thickness of the adhesive material is increased, the followability can be improved. Also, by thickening the adhesive material and absorbing the unevenness of the circuit pattern located on the peripheral edge of the surface of the semiconductor wafer, a gap is created between the semiconductor wafer and the adhesive ring, preventing the plating solution from entering. Is possible. Furthermore, if the pressure sensitive adhesive is made of silicone, excellent water repellency and weak adhesiveness can be expected.

  According to the invention described in claim 3, since the elastic holding layer is sandwiched between the inner ring and the outer ring, there is no need to dare to select an elastic holding layer having adhesiveness. Therefore, various films can be used as the elastic holding layer. Moreover, since the thickness of the support base material of an adhesion ring shall be 20-200 micrometers and the thickness of an adhesive material shall be 20-100 micrometers, the support jig for plating can be used repeatedly, maintaining intensity | strength.

  Further, the followability can be improved by increasing the thickness of the adhesive material. Also, by thickening the adhesive material and absorbing the unevenness of the circuit pattern located on the peripheral edge of the surface of the semiconductor wafer, a gap is created between the semiconductor wafer and the adhesive ring, preventing the plating solution from entering. Can do. Furthermore, the adoption of a silicone-based adhesive material can ensure excellent water repellency and weak adhesiveness.

It is a section explanatory view showing typically an embodiment of a support jig for plating of a semiconductor wafer concerning the present invention. It is a section explanatory view showing typically an embodiment of a support jig for plating of a semiconductor wafer concerning the present invention.

  Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. A semiconductor wafer plating support jig in this embodiment is a thin semiconductor having a circuit pattern 2 formed on the surface thereof as shown in FIG. A hollow support 10 made of a resin having a diameter larger than that of the wafer 1 and a self-adhesive elastic holding that supports the support 10 and covers the hollow portion of the support 10 from below, and holds and holds the semiconductor wafer 1. In the case where the thin semiconductor wafer 1 is plated with a plating solution, including a layer 20 and an adhesive ring 30 that is adhered to the surface of the elastic retaining layer 20 and adhered to the semiconductor wafer 1 mounted and retained on the elastic retaining layer 20 Furthermore, it functions to protect both the back surface and the peripheral edge of the semiconductor wafer 1.

  The semiconductor wafer 1 is made of, for example, a back-ground φ200 mm silicon wafer, and a multilayer circuit pattern 2 is formed on the surface by a known method (for example, application of a resist solution, development, etching, etc.). From the viewpoint of adapting to a thin semiconductor package, the semiconductor wafer 1 is formed to have a thickness of 100 μm or less, for example, 75 μm or less or about 50 μm, and is characterized by being brittle and easy to bend and difficult to handle. On the surface of the semiconductor wafer 1, the circuit pattern 2 is formed in a multilayer structure on all surfaces including the peripheral portion from the viewpoint of preventing distortion and the like.

  The support 10 is molded into a dicing frame 11 having an enlarged diameter that surrounds the semiconductor wafer 1 with a predetermined molding material, and accommodates the semiconductor wafer 1 through a gap. When the dicing frame 11 is made of metal, the dicing frame 11 has a poor compatibility with the plating solution, and is thus formed of a molding material containing a predetermined resin.

  The predetermined molding material of the dicing frame 11 is not particularly limited as long as it does not interfere with the plating process, and examples thereof include polycarbonate having excellent impact resistance and strength, thick polyethylene terephthalate, and the like. Examples thereof include molding materials in which polyphenylene sulfide resin or nylon resin is mixed and kneaded with carbon fiber and calcium carbonate for ensuring strength and rigidity, aluminum borate whisker having excellent chemical resistance and reinforcing effect, and the like.

  The dicing frame 11 is a flat plate having a thickness of 0.5 mm or more, preferably 1 mm or more, more preferably about 1.5 to 3 mm, from the viewpoint of ensuring rigidity and facilitating the handling of the semiconductor wafer 1. It is injection-molded, and the semiconductor wafer 1 is loosely fitted into the hollow portion through a gap. The dicing frame 11 is formed, for example, in a shape in which a circular hollow portion is perforated in a polygonal plate, or in a flat ring shape.

  The elastic holding layer 20 includes, for example, a plating masking adhesive film 21 in which a rubber adhesive is applied to a thin polyvinyl chloride film, a polyethylene terephthalate-based or special polypropylene-based plating masking adhesive film 21, and the like. The plating masking adhesive film 21 is adhered to the flat back surface of the dicing frame 11, is tensioned and stretched so as not to loosen, is cut into a planar circle along the peripheral edge of the dicing frame 11, and then the semiconductor wafer. 1 is adhered and detached from its back side.

  The adhesive ring 30 includes a support base 31 that opposes from the peripheral edge 3 of the surface of the semiconductor wafer 1 to the surface of the plating masking adhesive film 21 that is the elastic holding layer 20, and an adhesive that adheres to the opposing surface of the support base 31. 32 is formed in a planar ring shape of a two-layer structure including 32 and is detachably adhered from the surface peripheral edge portion 3 of the semiconductor wafer 1 to the surface of the plating masking adhesive film 21.

  The adhesive ring 30 functions so as to fix the semiconductor wafer 1 between the adhesive mask 30 and the plating masking adhesive film 21 and seal the peripheral edge of the semiconductor wafer 1 by the adhesion. Accordingly, it is possible to prevent the plating solution from entering the peripheral portion or the back side of the semiconductor wafer 1 where the plating solution is not exposed.

  Although the support base material 31 is not specifically limited, For example, it forms in a planar ring shape with a polyethylene terephthalate, a polyimide, etc. The support base 31 has a thickness of about 20 to 200 μm, preferably 50 to 150 μm, and more preferably about 90 to 120 μm, when ensuring rigidity and being used repeatedly. The adhesive material 32 is formed into a flat ring shape by, for example, a silicone type having excellent water repellency and the like and having weak adhesiveness. The adhesive material 32 is formed to a thickness of about 20 to 100 μm when it is desired to repeatedly use it with rigidity or to improve followability.

  By using such an adhesive ring 30, the semiconductor wafer 1 can be held on the support jig in a state where only the circuit pattern 2 portion that needs to be plated on the semiconductor wafer 1 is exposed. Since thinning and weight reduction can be achieved, handling becomes really easy.

  In the above configuration, when the thin semiconductor wafer 1 having the circuit pattern 2 formed on the front surface is plated, first, the plating masking adhesive film 21 is adhered to the back surface of the existing dicing frame 11 to a predetermined size. It cuts, the plating masking adhesive film 21 is piled up on the exposed back surface of the semiconductor wafer 1 and laminated and adhered, and the semiconductor wafer 1 is inverted to expose its surface. At this time, the plating masking adhesive film 21 may be adhered to the back surface of the dicing frame 11 after the plating masking adhesive film 21 is laminated and adhered to the back surface of the semiconductor wafer 1.

  After the surface of the semiconductor wafer 1 is exposed, the adhesive ring 30 is adhered to the surface of the plating masking adhesive film 21 from the surface peripheral portion 3 of the semiconductor wafer 1 to hold the semiconductor wafer 1 on the plating support jig, and thereafter If the plating support jig is immersed in the heated plating solution in the plating tank, and the plating pattern is quickly collided with the circuit pattern 2 on the surface of the immersed semiconductor wafer, the plating process is applied to the circuit pattern 2 of the semiconductor wafer 1. Can be applied quickly.

  At this time, since the adhesive ring 30 holds all peripheral portions of the semiconductor wafer 1, it is possible to effectively prevent the semiconductor wafer 1 from rattling in the vertical and horizontal directions. The plated semiconductor wafer 1 is cleaned by a cleaning device, and after the adhesive ring 30 is peeled from the plating masking adhesive film 21, it is diced into a large number of semiconductor chips in a dicing process.

  According to the above configuration, since the back surface of the semiconductor wafer 1 is protected by the plating masking adhesive film 21 and the bending is suppressed, even if the plating solution collides with the circuit pattern 2 of the semiconductor wafer 1 quickly, the semiconductor wafer 1 is cracked. This can effectively eliminate the risk of damage. Further, if the dicing frame 11 of the plating support jig having excellent strength is handled, the semiconductor wafer 1 will not be bent and deformed, so that handling during operation can be facilitated.

  Further, since the adhesive ring 30 protects the fragile peripheral portion of the semiconductor wafer 1 with the plating masking adhesive film 21, chipping of the peripheral portion of the semiconductor wafer 1 can be prevented, and the circuit pattern of the surface peripheral portion 3 can be prevented. 2 damage prevention can be expected. Further, the adhesive ring 30 is water-tightly coated on the surface peripheral edge portion 3 and the back surface peripheral edge portion of the semiconductor wafer 1, and the silicone-based adhesive material 32 having excellent water repellency regulates the infiltration of the plating solution into the surface peripheral edge portion 3 and the like. Therefore, the contaminated peripheral edge 3 of the semiconductor wafer 1 does not come into contact with the plating solution and does not adversely affect the plating process.

  Further, when the plating solution adheres to the peripheral edge portion or the back surface portion of the semiconductor wafer 1, there arises a problem that the storage container for storing the semiconductor wafer 1 after plating and the semiconductor manufacturing apparatus are contaminated. Since the infiltration of the plating solution can be prevented, the occurrence of such a problem can be eliminated. Moreover, since the existing dicing frame 11 is used, it can be automated or handled by an existing apparatus, and if the adhesive ring 30 is peeled off, it can be used as it is in the dicing process. Therefore, the handling property and versatility of the plating support jig can be improved, and the operation can be simplified and speeded up.

  Moreover, since the adhesive material 32 has a thickness of about 20 to 100 μm, even if the support base material 31 is thick, the followability is not reduced. Furthermore, by using the thick adhesive material 32, it is possible to effectively absorb the unevenness of the circuit pattern 2 located at the peripheral edge 3 of the surface of the semiconductor wafer 1.

  Next, FIG. 2 shows a second embodiment of the present invention. In this case, the support 10 is formed with an enlarged inner ring 12 surrounding the semiconductor wafer 1 and an outer peripheral surface of the inner ring 12. The outer ring 13 is detachably fitted to the outer ring 13 from the outside, and the peripheral edge of the elastic holding layer 20 is sandwiched between the inner ring 12 and the outer ring 13, and the adhesive ring is attached to the surface of the elastic holding layer 20. 30 is detachably adhered.

  The inner ring 12 and the outer ring 13 are not particularly limited. For example, the inner ring 12 and the outer ring 13 are formed of a molding material similar to that of the dicing frame 11 and are formed in a planar ring shape that can be closely fitted to each other.

  The elastic retaining layer 20 is, for example, a thin olefin-based or silicone-based elastic film having a thickness of 100 μm or less, preferably about 40 to 60 μm, more preferably about 50 μm, which is excellent in plating solution resistance and does not elute impurities and the like. Etc. The elastic retaining layer 20 is sandwiched between the outer peripheral surface of the inner ring 12 and the inner peripheral surface of the outer ring 13, and is tensioned and stretched so as to cover the hollow portion of the inner ring 12 from above. After the excess portion protruding from the ring 12 and the outer ring 13 is cut, the semiconductor wafer 1 is detachably held from the back side thereof. The other parts are the same as those in the above embodiment, and the description thereof is omitted.

  In the above configuration, when the thin semiconductor wafer 1 having the circuit pattern 2 formed on the surface is plated, first, the inner ring 12 and the outer ring 13 are tightly fitted and the elastic holding layer 20 is sandwiched therebetween. Then, the protruding excess portion of the elastic holding layer 20 is cut, and the surface of the semiconductor wafer 1 is exposed by laminating the back surface of the semiconductor wafer 1 on the surface of the elastic holding layer 20.

  After the surface of the semiconductor wafer 1 is exposed, the semiconductor wafer 1 is held by the plating support jig by adhering the adhesive ring 30 from the surface peripheral portion 3 of the semiconductor wafer 1 to the surface of the elastic holding layer 20, If the plating support jig is immersed in the heated plating solution in the plating tank, and the plating pattern is quickly collided with the circuit pattern 2 on the surface of the immersed semiconductor wafer 1, the plating process is performed on the circuit pattern 2 of the semiconductor wafer 1. Can be applied quickly.

  At this time, since the adhesive ring 30 holds the peripheral edge portion of the semiconductor wafer 1, it is possible to effectively prevent the positional deviation of the semiconductor wafer 1 in the vertical and horizontal directions. The plated semiconductor wafer 1 is cleaned by a cleaning device, transferred from a plating support jig to a vacuum chuck table and adhered to a dicing tape, and then diced into a large number of semiconductor chips in a dicing process.

  Also in this embodiment, the same effect as the above-described embodiment can be expected, and the self-adhesiveness is not particularly required for the elastic holding layer 20, so that the material of the film of the elastic holding layer 20 is not limited at all. Therefore, it is obvious that various films can be widely used as the elastic holding layer 20.

  In the above embodiment, the plating masking adhesive film 21 is adhered to the back surface of the dicing frame 11. However, if there is no possibility of becoming a contamination source, an existing dicing film may be adhered to the back surface of the dicing frame 11. Further, the adhesive ring 30 may be adhered to the surface peripheral edge portion 3 of the semiconductor wafer 1, the surface of the plating masking adhesive film 21, and the surface of the dicing frame 11.

  Further, the adhesive ring 30 may be adhered to the surface peripheral edge portion 3 of the semiconductor wafer 1, the surface of the elastic holding layer 20, and the surface of the outer ring 13. Further, a concave portion is formed on one of the outer peripheral surface of the inner ring 12 and the inner peripheral surface of the outer ring 13, and a convex portion is formed on the other, and the inner ring 12 and the outer ring are fitted with the concave portion and the convex portion. It is also possible to fit firmly so that 13 does not fall off. Further, when the semiconductor wafer 1 is held on the plating support jig, it may be held manually in a normal environment, but can be automatically held in a vacuum environment.

  Furthermore, the support jig for plating of the semiconductor wafer 1 according to the present invention can be applied to the semiconductor wafer 1 which is back-ground while leaving the peripheral edge portion. In this case, by adhering the plating masking adhesive film 21 so as to follow the step between the peripheral edge portion of the semiconductor wafer 1 and the back grind portion, the space with the semiconductor wafer 1 is reduced, and when the wafer is immersed in a heated plating solution, It is possible to effectively prevent the generated gas from expanding and causing the peeling of the adhesive ring 30.

  The support jig for plating a semiconductor wafer according to the present invention is used in the field of manufacturing a semiconductor wafer.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Circuit pattern 3 Surface peripheral part 10 Support body 11 Dicing frame 12 Inner ring 13 Outer ring 20 Elastic holding layer 21 Plating masking adhesive film 30 Adhesive ring 31 Support base material 32 Adhesive material

Claims (3)

When a semiconductor wafer having a thickness of 100 μm or less with a circuit pattern formed on the surface is immersed in a plating solution, a semiconductor wafer plating support jig for protecting the back surface and the peripheral portion of the semiconductor wafer,
A hollow support made of a resin having a diameter larger than that of the semiconductor wafer, an elastic holding layer supported by the support to cover the hollow portion of the support, and holding the semiconductor wafer from the back side thereof, and at least an elastic holding layer An adhesive ring that is adhered to the surface of the semiconductor wafer and is adhered to the peripheral edge of the surface of the semiconductor wafer held by the elastic holding layer, and the adhesive ring is opposed to the surface of the elastic holding layer from the surface peripheral edge of the semiconductor wafer. A support jig for plating a semiconductor wafer, characterized in that the support jig is formed from a material and an adhesive material that adheres to the opposing surface of the support substrate and adheres from the peripheral edge of the surface of the semiconductor wafer to the surface of the elastic holding layer.   The support is a dicing frame that surrounds the semiconductor wafer, the elastic holding layer is a plating masking adhesive film that adheres to the back surface of the dicing frame, the thickness of the support base is 20 to 200 μm, and the adhesive material is silicone-based The support jig for plating a semiconductor wafer according to claim 1, wherein the thickness of the adhesive material is 20 to 100 μm.   The support is divided into an inner ring whose diameter is larger than that of the semiconductor wafer and an outer ring that is detachably fitted to the inner ring from the outside, and the peripheral portion of the elastic holding layer is formed on the inner ring and the outer ring. 2. The support jig for plating a semiconductor wafer according to claim 1, wherein the support substrate is made to have a thickness of 20 to 200 [mu] m, and the adhesive material is a silicone-based adhesive material and the thickness is 20 to 100 [mu] m.

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