JP6017909B2 - Support jig for semiconductor wafer plating - Google Patents

Description

  The present invention relates to a support jig for plating a semiconductor wafer used when a thin semiconductor wafer having a circuit pattern formed on the surface thereof is immersed in a plating solution for plating.

  Conventionally, when a thin semiconductor wafer having a circuit pattern formed on the surface is plated, the semiconductor wafer is immersed in a plating solution in a plating tank (not shown), and the circuit pattern on the surface of the immersed semiconductor wafer is applied to the plating solution. Collisions are made quickly, and the plating process is quickly applied to the circuit pattern of the semiconductor wafer (see Patent Documents 1, 2, 3, and 4).

  From the viewpoint of adapting to a thin semiconductor package, the semiconductor wafer is formed thin, for example, to a thickness of 100 μm or less, and is characterized by being fragile and easily bent and difficult to handle. On the surface of the semiconductor wafer, circuit patterns are formed in a multilayer structure on all surfaces including the peripheral edge.

JP 2010-109298 A JP 2008-196055 A Japanese Patent Laid-Open No. 2003-226997 Japanese Patent Laid-Open No. 05-308075

  A conventional thin semiconductor wafer having a thickness of 100 μm or less is plated as described above, but has a low strength. Therefore, when the plating solution collides quickly, there is a high possibility that it will be broken and damaged by impact. In order to solve such a problem, a method has been proposed in which a protective tape is adhered to the back surface of a thin semiconductor wafer to improve the strength of the semiconductor wafer.

  However, if the protective tape is simply adhered to the back surface of the semiconductor wafer, it will be bent and deformed, making handling difficult. Although it is possible to prevent damage other than the peripheral edge of the semiconductor wafer, it is difficult to prevent the chipping by protecting the fragile peripheral edge of the semiconductor wafer, which will damage the circuit pattern on the peripheral edge of the surface. It will be. Furthermore, when the circuit pattern is formed in a multilayer structure on the surface of the semiconductor wafer, the peripheral edge of the semiconductor wafer is contaminated with a resist solution or the like. If the contaminated peripheral edge touches the plating solution, the plating process is adversely affected. Will be affected.

  The present invention has been made in view of the above, facilitating the handling of a thin semiconductor wafer plated with a plating solution, protecting the brittle peripheral portion of the semiconductor wafer and preventing chipping, and the peripheral edge of the semiconductor wafer. It is an object of the present invention to provide a support jig for plating a semiconductor wafer that is less likely to adversely affect the plating process due to contamination of the portion.

In the present invention, in order to solve the above problems, when a semiconductor wafer having a thickness of 100 μm or less having a circuit pattern formed on the surface is immersed in a plating solution, the back surface and the peripheral edge of the semiconductor wafer are protected. ,
A resin-made support ring that accommodates the semiconductor wafer, an elastic holding layer that is supported by the peripheral edge of the front surface of the support ring and covers the hollow portion of the support ring, and holds the semiconductor wafer from its back surface side, and this elastic holding layer And an adhesive ring that adheres to the peripheral edge of the surface of the semiconductor wafer held by the elastic holding layer.

  The adhesive ring is adhered to the supporting base material facing from the peripheral edge of the surface of the semiconductor wafer to the peripheral edge of the elastic holding layer, and the opposing surface of the supporting base, and from the peripheral edge of the semiconductor wafer to the elastic holding layer. Including a pressure-sensitive adhesive material that adheres to the peripheral surface of the surface, the thickness of the support base material can be 20 to 200 μm, the pressure-sensitive adhesive material can be a silicone-based pressure-sensitive adhesive material, and the thickness can be 20 to 100 μm.

  Here, the semiconductor wafer in the claims includes types of φ200, 300, 450 mm, etc., but is not particularly limited. In addition, there is a type in which the peripheral portion is thick and the other portions are thin, but there is no particular limitation. The elastic holding layer may be transparent, opaque, or translucent. This elastic holding layer may or may not have weak adhesiveness.

  According to the present invention, since the elastic holding layer protects the back surface of the semiconductor wafer and suppresses the bending, even if the plating solution collides with the circuit pattern of the semiconductor wafer quickly, the possibility of the semiconductor wafer breaking can be eliminated. it can. Further, if the support ring of the plating support jig having excellent strength is operated, the semiconductor wafer is less likely to be bent and deformed. Further, since the peripheral portion of the semiconductor wafer is protected by being sandwiched between the adhesive ring and the elastic holding layer, chipping of the peripheral portion of the semiconductor wafer can be prevented. Furthermore, even if the front and back surfaces of the peripheral portion of the semiconductor wafer are dirty, the dirty peripheral portion is covered with the adhesive ring, and the infiltration of the plating solution into the peripheral portion is restricted.

  According to the present invention, it is possible to facilitate handling of a thin semiconductor wafer plated with a plating solution, and to protect a fragile peripheral edge of the semiconductor wafer and prevent chipping. Further, it is possible to reduce the adverse effect on the plating process due to the contamination of the peripheral edge of the semiconductor wafer.

  According to invention of Claim 2, since the thickness of the support base material of an adhesive ring shall be 20-200 micrometers and the thickness of an adhesive material shall be 20-100 micrometers, the support jig for plating is repeated, ensuring intensity | strength. Can be used. Moreover, since the thickness of the adhesive material is increased, the followability can be improved. Also, by thickening the adhesive material and absorbing the unevenness of the circuit pattern located on the peripheral edge of the surface of the semiconductor wafer, a gap is created between the semiconductor wafer and the adhesive ring, preventing the plating solution from entering. Is possible. Furthermore, if the pressure sensitive adhesive is made of silicone, excellent water repellency and weak adhesiveness can be expected.

1 is an overall perspective view schematically showing an embodiment of a support jig for plating a semiconductor wafer according to the present invention. It is principal part sectional explanatory drawing which shows typically embodiment of the support jig for plating of the semiconductor wafer which concerns on this invention.

  Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. A semiconductor wafer plating support jig in this embodiment has a circuit pattern 2 formed on the surface thereof as shown in FIGS. A resin-made support ring 10 that accommodates the thin semiconductor wafer 1, an elastic holding layer 13 that covers the hollow portion 11 of the support ring 10 and mounts the semiconductor wafer 1, and a surface peripheral edge portion 14 of the elastic holding layer 13 When the thin semiconductor wafer 1 is plated with a plating solution, the semiconductor wafer 1 is provided with a thick adhesive ring 15 adhered to the surface peripheral edge portion 3 of the semiconductor wafer 1 mounted and held on the elastic holding layer 13. It functions to protect both the back surface and the peripheral edge of 1.

  The semiconductor wafer 1 is made of, for example, a back-ground φ200 mm silicon wafer, and a multilayer circuit pattern 2 is formed on the surface by a known method (for example, application of a resist solution, development, etching, etc.). From the viewpoint of adapting to a thin semiconductor package, the semiconductor wafer 1 is formed to have a thickness of 100 μm or less, for example, 75 μm or less or about 50 μm, and is characterized by being brittle and easy to bend and difficult to handle. On the surface of the semiconductor wafer 1, the circuit pattern 2 is formed in a multilayer structure on all surfaces including the peripheral portion from the viewpoint of preventing distortion and the like.

  The support ring 10 is formed into a planar ring shape having a diameter larger than that of the semiconductor wafer 1 with a predetermined molding material, and is loosely fitted to the semiconductor wafer 1 through a gap. When the support ring 10 is made of metal, the support ring 10 is not compatible with the plating solution, and thus is formed of a molding material containing a predetermined resin. The predetermined molding material for the support ring 10 is not particularly limited as long as it does not interfere with the plating process, and examples thereof include polycarbonate having excellent impact resistance and strength, thick polyethylene terephthalate, and the like.

  The support ring 10 is injection-molded to a thickness of 0.5 mm or more, preferably 0.8 mm or more, more preferably 1 mm or more from the viewpoint of ensuring rigidity and facilitating the handling of the semiconductor wafer 1.

  The elastic retention layer 13 is, for example, a thin olefin or silicone film having excellent plating solution resistance and a thickness of 100 μm or less, preferably about 40 to 60 μm, more preferably about 50 μm, which does not elute impurities and the like. Consists of. The elastic holding layer 13 is adhered to the flat surface peripheral edge 12 of the support ring 10 with a double-sided adhesive tape (not shown), is stretched in tension, and is cut into a planar circle along the peripheral edge of the support ring 10. After being done, the semiconductor wafer 1 is detachably held from its back side.

  The adhesive ring 15 includes a support base material 16 facing from the surface peripheral edge portion 3 of the semiconductor wafer 1 to the surface peripheral edge portion 14 of the elastic holding layer 13, and an adhesive material 17 that adheres to the opposing surface of the support base material 16. It is formed in a planar ring shape having a two-layer structure, and is detachably adhered from the surface peripheral edge 3 of the semiconductor wafer 1 to the surface peripheral edge 14 of the elastic holding layer 13. The adhesion ring 15 functions to fix the semiconductor wafer 1 between the elastic holding layer 13 and seal the peripheral edge of the semiconductor wafer 1 by the adhesion. Accordingly, it is possible to prevent the plating solution from entering the peripheral portion or the back side of the semiconductor wafer 1 where the plating solution is not exposed.

  Although the support base material 16 is not specifically limited, For example, it forms in a planar ring shape with a polyethylene terephthalate, a polyimide, etc. The support base 16 is formed to have a thickness of about 20 to 200 μm, preferably 50 to 150 μm, more preferably about 90 to 120 μm, when ensuring rigidity and being used repeatedly. Moreover, the adhesive material 17 is formed in a planar ring shape by, for example, a silicone type having excellent water repellency and the like and having weak adhesiveness. The adhesive material 17 is formed to a thickness of about 20 to 100 μm when it is used repeatedly with rigidity, or when it is desired to improve followability.

  By using such an adhesive ring 15, the semiconductor wafer 1 can be held on the support jig in a state where only the circuit pattern 2 portion that needs to be plated on the semiconductor wafer 1 is exposed. Since thinning and weight reduction can be achieved, handling becomes really easy.

  In the above configuration, when the thin semiconductor wafer 1 having the circuit pattern 2 formed on the surface is subjected to plating, first, the elastic holding layer 13 is laminated on the exposed back surface of the semiconductor wafer 1, and this elastic holding layer is laminated. A support ring 10 that surrounds the semiconductor wafer 1 is overlapped and fixed to the back surface of the semiconductor wafer 13, and the semiconductor wafer 1 is inverted to expose its surface. At this time, after the support ring 10 is adhesively fixed to the back surface of the elastic holding layer 13, the elastic holding layer 13 may be stacked on the back surface of the semiconductor wafer 1.

  After the surface of the semiconductor wafer 1 is exposed, the adhesive ring 15 is adhered from the surface peripheral edge 3 of the semiconductor wafer 1 to the surface peripheral edge 14 of the elastic holding layer 13, so that the semiconductor wafer 1 is attached to the plating support jig of the semiconductor wafer 1. 1 is held, and then a plating support jig is dipped in the plating solution of the plating tank, and the circuit pattern 2 of the semiconductor wafer 1 is quickly collided with the circuit pattern 2 on the surface of the immersed semiconductor wafer 1. The plating process can be performed quickly.

  At this time, since the adhesive ring 15 holds the peripheral edge portion of the semiconductor wafer 1, it is possible to effectively prevent the semiconductor wafer 1 from rattling in the vertical and horizontal directions. The plated semiconductor wafer 1 is cleaned by a cleaning device, transferred from a plating support jig to a vacuum chuck table and adhered to a dicing tape, and then diced into a large number of semiconductor chips in a dicing process.

  According to the above configuration, since the elastic holding layer 13 protects the back surface of the semiconductor wafer 1 and suppresses bending, even if the plating solution collides with the circuit pattern 2 of the semiconductor wafer 1 quickly, the semiconductor wafer 1 is cracked. The risk of damage can be effectively eliminated. Further, if the support ring 10 of the plating support jig having excellent strength is handled, the semiconductor wafer 1 will not be bent and deformed, so that handling during operation can be facilitated.

  Further, since the brittle edge of the semiconductor wafer 1 is sandwiched and protected by the adhesive ring 15 between the elastic holding layer 13, chipping of the edge of the semiconductor wafer 1 can be prevented, and the circuit pattern 2 on the surface edge 3 can be prevented. Can be expected to prevent damage. Further, the adhesive ring 15 water-tightly coats the dirty front surface peripheral portion 3 and back surface peripheral portion of the semiconductor wafer 1, and the silicone-based adhesive material 17 having excellent water repellency regulates the infiltration of the plating solution into the front surface peripheral portion 3 and the like. Therefore, the contaminated peripheral edge 3 of the semiconductor wafer 1 does not come into contact with the plating solution and does not adversely affect the plating process.

  Further, when the plating solution adheres to the peripheral edge portion or the back surface portion of the semiconductor wafer 1, there arises a problem that the storage container for storing the semiconductor wafer 1 after plating and the semiconductor manufacturing apparatus are contaminated. Since the infiltration of the plating solution can be prevented, the occurrence of such a problem can be eliminated. In addition, since self-adhesiveness is not particularly required for the elastic holding layer 13, the material of the film of the elastic holding layer 13 is not limited at all, and various films can be used.

  Moreover, since the adhesive material 17 has a thickness of about 20 to 100 μm, even if the support base material 16 is thick, the follow-up performance is not reduced. Furthermore, by using the thick adhesive material 17, it is possible to effectively absorb the unevenness of the circuit pattern 2 located at the peripheral edge 3 of the surface of the semiconductor wafer 1.

  In the above embodiment, the elastic retaining layer 13 is adhered to the surface peripheral edge portion 12 of the support ring 10 with an adhesive tape or the like, but the material of the elastic retaining layer 13 is changed to give self-adhesiveness, and the surface of the support ring 10 The elastic holding layer 13 may be directly adhered to the peripheral edge portion 12. Further, the peripheral edge of the elastic holding layer 13 may be aligned and adhered to the outer peripheral edge of the support ring 10 or may be adhered without being aligned.

  When the semiconductor wafer 1 is held on the plating support jig, it may be held manually in a normal environment, but may be automatically held in a vacuum environment. Furthermore, the semiconductor wafer plating support jig according to the present invention can also be applied to the back-ground semiconductor wafer 1 leaving the peripheral edge.

  The support jig for plating a semiconductor wafer according to the present invention is used in the field of manufacturing a semiconductor wafer.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Circuit pattern 3 Surface peripheral part 10 Support ring 11 Hollow part 12 Surface peripheral part 13 Elastic holding layer 14 Surface peripheral part 15 Adhesive ring 16 Support base material 17 Adhesive material

Claims (2)

When a semiconductor wafer having a thickness of 100 μm or less with a circuit pattern formed on the surface is immersed in a plating solution, a semiconductor wafer plating support jig for protecting the back surface and the peripheral portion of the semiconductor wafer,
A resin-made support ring that accommodates the semiconductor wafer, an elastic holding layer that is supported by the peripheral edge of the front surface of the support ring and covers the hollow portion of the support ring, and holds the semiconductor wafer from its back surface side, and this elastic holding layer A support jig for plating a semiconductor wafer, comprising: an adhesive ring that is adhered to the peripheral edge portion of the semiconductor wafer and adhered to the peripheral edge portion of the semiconductor wafer held by the elastic holding layer.   The adhesive ring is bonded to the support base that faces from the peripheral edge of the surface of the semiconductor wafer to the peripheral edge of the elastic holding layer, and to the opposing surface of the support base, and from the peripheral edge of the semiconductor wafer to the peripheral edge of the elastic holding layer. 2. The semiconductor wafer plating according to claim 1, wherein the thickness of the support base material is 20 to 200 μm, the pressure sensitive adhesive material is a silicone-based pressure sensitive adhesive material, and the thickness is 20 to 100 μm. Support jig.

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