JP6063641B2 - Wafer protection member - Google Patents

Wafer protection member Download PDF

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JP6063641B2
JP6063641B2 JP2012112693A JP2012112693A JP6063641B2 JP 6063641 B2 JP6063641 B2 JP 6063641B2 JP 2012112693 A JP2012112693 A JP 2012112693A JP 2012112693 A JP2012112693 A JP 2012112693A JP 6063641 B2 JP6063641 B2 JP 6063641B2
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wafer
outer peripheral
protection member
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JP2013239640A (en
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真樹 坂井
真樹 坂井
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Disco Corp
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Description

本発明は、MEMS(Micro Electro Mechanical Systems)ウエーハ等の表面に微細構造のデバイスを有するウエーハの表面を保護するためのウエーハ保護部材に関するものである。   The present invention relates to a wafer protection member for protecting the surface of a wafer having a microstructure device on the surface of a MEMS (Micro Electro Mechanical Systems) wafer or the like.

表面に各種デバイスが形成された半導体ウエーハは、その表面を保護テープで保護された状態で研削、研磨処理が施され、所定の厚みに薄化された後、切削装置等で各デバイス毎に分割される。デバイスとしてのマイクロマシンデバイスが表面に形成されたウエーハにおいては、表面のデバイス形成箇所に保護粘着テープを貼着してしまうと、剥離時にマイクロマシンデバイスが破損してしまうという問題がある。また、デバイスとしての固体撮像素子が形成されたウエーハ(CMOSウエーハ)においては、表面のデバイス形成箇所に保護粘着テープを貼着してしまうと、保護テープの粘着層が固体撮像素子に付着して、デバイスの不良を起こすという問題がある。このために、デバイス領域を囲繞する外周領域のみに粘着層を貼付しデバイス領域に残渣を残すことなくウエーハを固定し研削を実施するという表面保護用の粘着テープ及び研削方法が考案されている(例えば、特許文献1及び特許文献2参照)。   Semiconductor wafers with various devices formed on the surface are ground and polished in a state where the surface is protected with a protective tape, thinned to a predetermined thickness, and then divided into individual devices with a cutting machine or the like. Is done. In a wafer in which a micromachine device as a device is formed on the surface, there is a problem that if the protective adhesive tape is attached to a device formation portion on the surface, the micromachine device is damaged at the time of peeling. In addition, in a wafer (CMOS wafer) in which a solid-state imaging device as a device is formed, if a protective adhesive tape is attached to a surface device forming portion, the adhesive layer of the protective tape adheres to the solid-state imaging device. There is a problem of causing a defective device. For this reason, an adhesive tape for surface protection and a grinding method have been devised in which an adhesive layer is applied only to the outer peripheral region surrounding the device region, and the wafer is fixed and ground without leaving any residue in the device region ( For example, see Patent Literature 1 and Patent Literature 2).

特開2005−109433号公報JP 2005-109433 A 特許第4447280号公報Japanese Patent No. 4447280

しかし、前述した特許文献1などに示された表面保護用の粘着テープでは、バンプが形成されずにデバイス表面が平坦に形成されたウエーハの場合には、粘着層がリング状に凸形状で形成されているために、表面に貼着した際に表面デバイス面とデバイス保護部との間に隙間が生じてしまい、研削面にディンプル(窪み)が生じたりチッピングが発生したり、加工品質の悪化の原因となり、良好に薄化できないという問題がある。   However, the adhesive tape for surface protection shown in Patent Document 1 described above, for example, is a wafer in which the device surface is formed flat without bumps, and the adhesive layer is formed in a convex shape in a ring shape. Therefore, a gap is created between the surface device surface and the device protection part when it is attached to the surface, dimples (dents) occur on the ground surface, chipping occurs, and processing quality deteriorates. There is a problem that it cannot be thinned well.

本発明は、上記に鑑みてなされたものであって、バンプ等が形成されずにデバイス表面が平坦に形成されたウエーハの場合でも、良好な薄化が可能で且つウエーハの表面側のデバイスを破損、汚染することないウエーハ保護部材を提供することを目的とする。   The present invention has been made in view of the above, and even in the case of a wafer in which the surface of the device is formed flat without forming bumps or the like, the device on the surface side of the wafer can be satisfactorily thinned. An object of the present invention is to provide a wafer protection member that is not damaged or contaminated.

上述した課題を解決し、目的を達成するために、本発明に係るウエーハ保護部材は、デバイスが形成されたウエーハの表面を保護する保護部材であって、デバイスが形成されていないウエーハの外周領域に貼着する外周貼着部と、該外周貼着部に囲繞されデバイスと当接し非貼着状態でデバイスを保護するデバイス保護部と、から構成され、該外周貼着部と該デバイス保護部のウエーハの表面が当接する面は同一面で形成されていることを特徴とする。   In order to solve the above-described problems and achieve the object, the wafer protection member according to the present invention is a protection member that protects the surface of the wafer on which the device is formed, and is an outer peripheral region of the wafer on which the device is not formed. An outer peripheral adhesive portion that is attached to the outer peripheral adhesive portion, and a device protection portion that is surrounded by the outer peripheral adhesive portion and contacts the device and protects the device in a non-adhesive state, the outer peripheral adhesive portion and the device protective portion The surface with which the surface of the wafer abuts is formed on the same surface.

本発明のウエーハ保護部材は、外周貼着部とデバイス保護部とが同一面で形成されているため、良好に研削すること即ち良好な薄化が可能となる。また、外周貼着部がウエーハの外周領域に貼着するので、ウエーハの表面のデバイスに外周貼着部を構成する粘着材が付着することがなく、したがって、デバイスが破損されたり汚染されることを回避することができる。   In the wafer protection member of the present invention, since the outer peripheral sticking portion and the device protection portion are formed on the same surface, it is possible to perform good grinding, that is, good thinning. In addition, since the outer peripheral sticking part sticks to the outer peripheral region of the wafer, the adhesive material constituting the outer peripheral sticking part does not adhere to the device on the wafer surface, and therefore the device is damaged or contaminated. Can be avoided.

図1は、実施形態に係るウエーハ保護部材により表面が保護されるウエーハを示す斜視図である。FIG. 1 is a perspective view showing a wafer whose surface is protected by a wafer protection member according to an embodiment. 図2は、実施形態に係るウエーハ保護部材とウエーハを示す斜視図である。FIG. 2 is a perspective view showing the wafer protection member and the wafer according to the embodiment. 図3は、実施形態に係るウエーハ保護部材により表面が保護されたウエーハに研削加工を施す状態の断面図である。FIG. 3 is a cross-sectional view showing a state in which grinding is performed on the wafer whose surface is protected by the wafer protection member according to the embodiment.

本発明を実施するための形態(実施形態)につき、図面を参照しつつ詳細に説明する。以下の実施形態に記載した内容により本発明が限定されるものではない。また、以下に記載した構成要素には、当業者が容易に想定できるもの、実質的に同一のものが含まれる。さらに、以下に記載した構成は適宜組み合わせることが可能である。また、本発明の要旨を逸脱しない範囲で構成の種々の省略、置換又は変更を行うことができる。   DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the structures described below can be combined as appropriate. Various omissions, substitutions, or changes in the configuration can be made without departing from the scope of the present invention.

〔実施形態〕
図1は、実施形態に係るウエーハ保護部材により表面が保護されるウエーハなどを示す斜視図である。図2は、実施形態に係るウエーハ保護部材とウエーハを示す斜視図である。図3は、実施形態に係るウエーハ保護部材により表面が保護されたウエーハに研削加工を施す状態の断面図である。本実施形態にかかるウエーハ保護部材1(以下、単に保護部材と呼ぶ)は、研削加工が施されて薄化されるウエーハWのデバイスDが形成された表面WSを保護するものである。
Embodiment
FIG. 1 is a perspective view showing a wafer whose surface is protected by a wafer protection member according to an embodiment. FIG. 2 is a perspective view showing the wafer protection member and the wafer according to the embodiment. FIG. 3 is a cross-sectional view showing a state in which grinding is performed on the wafer whose surface is protected by the wafer protection member according to the embodiment. A wafer protection member 1 according to the present embodiment (hereinafter simply referred to as a protection member) protects a surface WS on which a device D of a wafer W to be thinned by grinding is formed.

ここで、保護対象のウエーハWは、シリコンなどを母材とする半導体ウエーハであって、図1に示すように、複数の分割予定ラインLによって格子状に区画されたデバイスDが表面WSに形成されている。ウエーハWは、図3に示すように、デバイスDが複数形成されている表面WSに保護部材1が取り付けられて、図3に一部が示された研削装置10によって、表面WSの反対側の裏面WRが研削されて、薄化される。なお、ウエーハWの表面WSには、分割予定ラインLによって格子状に区画されたデバイスDが形成されたデバイス領域DRと、デバイスDが形成されていない外周領域GRとが設けられている。また、本実施形態では、ウエーハWの表面WSに形成されるデバイスDとしては、MEMSウエーハを構成するマイクロマシンデバイスや、CMOSウエーハを構成する固定撮像素子が用いられる。さらに、デバイスDの表面には、バンプ等が形成されずに平坦に形成されている。   Here, the wafer W to be protected is a semiconductor wafer whose base material is silicon or the like, and as shown in FIG. 1, devices D partitioned in a lattice pattern by a plurality of division lines L are formed on the surface WS. Has been. As shown in FIG. 3, the wafer W has a protective member 1 attached to a surface WS on which a plurality of devices D are formed, and a grinding device 10 partially shown in FIG. The back surface WR is ground and thinned. Note that, on the surface WS of the wafer W, there are provided a device region DR in which the devices D partitioned in a lattice pattern by the division lines L and an outer peripheral region GR in which the devices D are not formed. In this embodiment, as the device D formed on the surface WS of the wafer W, a micromachine device that constitutes a MEMS wafer or a fixed imaging element that constitutes a CMOS wafer is used. Furthermore, bumps or the like are not formed on the surface of the device D, and are formed flat.

保護部材1は、デバイスDが形成されたウエーハWの表面WSを保護するものであって、図2及び図3に示すように、基材2と、外周貼着部3と、デバイス保護部4とから構成されている。   The protection member 1 protects the surface WS of the wafer W on which the device D is formed. As shown in FIGS. 2 and 3, the base member 2, the outer periphery sticking portion 3, and the device protection portion 4. It consists of and.

基材2は、厚みが100〜200μm程度のポリエチレン、ポリイミド等の樹脂で構成されたシート状又はテープ状のものである。基材2の平面形状は、外径がウエーハWの外径と略等しい円形に形成されている。基材2の外縁部には、全周に亘って薄肉部5が設けられている。   The base material 2 is a sheet-like or tape-like one made of a resin such as polyethylene or polyimide having a thickness of about 100 to 200 μm. The planar shape of the base material 2 is formed in a circular shape whose outer diameter is substantially equal to the outer diameter of the wafer W. A thin portion 5 is provided on the outer edge portion of the substrate 2 over the entire circumference.

外周貼着部3は、デバイスDが形成されていないウエーハWの外周領域GRに貼着するものである。外周貼着部3は、ウエーハWの表面WSに粘着性を有する合成樹脂などで構成され、基材2の薄肉部5に設けられて、基材2の外縁部に全周に亘って設けられている。外周貼着部3は、感圧形接着剤、熱硬化性接着剤、UV硬化性接着剤などの種々の接着剤で構成することができる。   The outer periphery sticking part 3 sticks to the outer periphery area | region GR of the wafer W in which the device D is not formed. The outer peripheral sticking portion 3 is made of a synthetic resin having adhesiveness on the surface WS of the wafer W, is provided on the thin portion 5 of the base material 2, and is provided on the outer edge portion of the base material 2 over the entire circumference. ing. The outer periphery sticking part 3 can be comprised with various adhesive agents, such as a pressure sensitive adhesive, a thermosetting adhesive, and a UV curable adhesive.

デバイス保護部4は、外周貼着部3に囲繞されデバイスDと当接し非貼着状態でデバイスDを保護するものである。本実施形態では、デバイス保護部4は、基材2の外周貼着部3よりも内側の部分により形成されている。デバイス保護部4の面6は、外周貼着部3がウエーハWの外周領域GRに貼着すると、ウエーハWの表面WSに設けられたデバイス領域DRのデバイスDと当接する。また、保護部材1は、外周貼着部3の面7とデバイス保護部4のウエーハWの表面WSが当接する面6は同一面で形成されている。   The device protection part 4 is surrounded by the outer periphery sticking part 3 and contacts the device D to protect the device D in a non-sticking state. In the present embodiment, the device protection part 4 is formed by a part inside the outer peripheral sticking part 3 of the substrate 2. The surface 6 of the device protection unit 4 comes into contact with the device D in the device region DR provided on the surface WS of the wafer W when the outer periphery bonding unit 3 is bonded to the outer periphery region GR of the wafer W. Moreover, as for the protection member 1, the surface 6 where the surface 7 of the outer periphery sticking part 3 and the surface WS of the wafer W of the device protection part 4 contact | abut is formed in the same surface.

前述した構成の保護部材1は、基材2を構成する長尺のシート材からウエーハWの外径に合わせて切り取られて、厚みが一様の基材2を得る。そして、厚みが一様の基材2の外縁部の厚みを全周に亘って切り取って、薄肉部5を形成する。その後、薄肉部5に外周貼着部3を構成する粘着性を有する合成樹脂を、基材2の面6と同一面になるように充填して、保護部材1が、得られる。そして、保護部材1は、図2に示すように、外周貼着部3が表面WSに相対し、かつ保護部材1の外縁がウエーハWの外縁に一致するように、ウエーハWの表面WSに重ねられる。そして、保護部材1は、外周貼着部3がウエーハWの表面WSの外周領域GRに貼着し、かつ、デバイス保護部4が非粘着状態でデバイスDに当接してウエーハWのデバイスDを保護する。保護部材1は、デバイス保護部4がデバイスDとの間に気泡などの異物を侵入させることなく、デバイスDに密に当接して、ウエーハWに取り付けられる。   The protective member 1 having the above-described configuration is cut from the long sheet material constituting the base material 2 in accordance with the outer diameter of the wafer W to obtain the base material 2 having a uniform thickness. And the thickness of the outer edge part of the base material 2 with uniform thickness is cut off over the perimeter, and the thin part 5 is formed. Thereafter, the protective member 1 is obtained by filling the thin-walled portion 5 with a synthetic resin having adhesiveness constituting the outer peripheral sticking portion 3 so as to be flush with the surface 6 of the substrate 2. Then, as shown in FIG. 2, the protective member 1 is overlapped on the surface WS of the wafer W so that the outer peripheral sticking portion 3 faces the surface WS and the outer edge of the protective member 1 coincides with the outer edge of the wafer W. It is done. Then, the protective member 1 is attached to the outer peripheral region GR of the surface WS of the wafer W with the outer peripheral attaching portion 3 and the device protecting portion 4 is brought into contact with the device D in a non-adhesive state. Protect. The protection member 1 is attached to the wafer W while being in close contact with the device D without allowing the device protection unit 4 to enter a foreign substance such as a bubble between the device protection unit 4 and the device D.

そして、保護部材1は、図3に示すように、ウエーハWに取り付けられた状態で、研削装置10のチャックテーブル11に載置されて、吸引保持される。そして、保護部材1は、ウエーハWの裏面WRに研削装置10の研削砥石12が押し当てられて中心軸線回りに回転されて研削される研削工程の際に、ウエーハWの表面WSに形成されたデバイスDを保護する。   As shown in FIG. 3, the protection member 1 is placed on the chuck table 11 of the grinding apparatus 10 while being attached to the wafer W, and is sucked and held. The protective member 1 is formed on the surface WS of the wafer W during the grinding process in which the grinding wheel 12 of the grinding device 10 is pressed against the back surface WR of the wafer W and is rotated around the central axis to be ground. Protect device D.

また、保護部材1は、研削工程後に、研削装置10のチャックテーブル11からウエーハWがピックアップされて、ウエーハWの裏面WRがダイシングテープT(図1に示す)に貼着されると、ウエーハWの表面WSから剥離される。なお、ダイシングテープTの外縁部に環状フレームFが貼着されて、ウエーハWは、図1に示すように、環状フレームFに固定される。そして、ウエーハWは、環状フレームFに固定されたまま切削工程などの次工程に搬送される。   Further, after the grinding process, when the wafer W is picked up from the chuck table 11 of the grinding apparatus 10 and the back surface WR of the wafer W is attached to the dicing tape T (shown in FIG. 1), the protective member 1 is attached to the wafer W. The surface WS is peeled off. An annular frame F is attached to the outer edge of the dicing tape T, and the wafer W is fixed to the annular frame F as shown in FIG. Then, the wafer W is transported to the next process such as a cutting process while being fixed to the annular frame F.

以上のように、本実施形態に係る保護部材1は、デバイス保護部4の面6と外周貼着部3の面7とが同一面で形成されているため、バンプ等が形成されずにデバイスDの表面が平坦に形成されたウエーハWであっても、外周貼着部3とデバイス保護部4がウエーハWの表面WSとの間に隙間を生じさせることなく、密に当接する。このために、研削装置10によりウエーハWに研削加工を施して、薄化する際に、研削砥石12とウエーハWの裏面WRとの接触面圧を一様にすることができ、良好に研削すること即ち良好な薄化が可能となる。   As described above, since the surface 6 of the device protection unit 4 and the surface 7 of the outer peripheral sticking unit 3 are formed on the same surface, the protection member 1 according to the present embodiment is not formed with bumps or the like. Even if the wafer W has a flat D surface, the outer peripheral sticking portion 3 and the device protection portion 4 are in close contact with each other without generating a gap between the surface W of the wafer W. For this reason, when the wafer W is ground by the grinding device 10 and is thinned, the contact surface pressure between the grinding wheel 12 and the back surface WR of the wafer W can be made uniform, and the grinding is performed satisfactorily. That is, good thinning is possible.

また、ウエーハWの表面に貼着する外周貼着部3が保護部材1の外縁部のみに設けられているために、外周貼着部3がデバイスDに貼着することがない。このために、保護部材1をウエーハWの表面WSから剥離させても、ウエーハWの表面WSのデバイスDに外周貼着部3を構成する粘着性を有する合成樹脂が付着することがない。したがって、デバイスDが破損されたり汚染されることを回避することができる。よって、保護部材1によれば、バンプ等が形成されずにデバイスDの表面が平坦に形成されたウエーハWの場合でも、良好な薄化が可能で且つウエーハWの表面WSのデバイスDを破損、汚染することを抑制することができる。   Moreover, since the outer periphery sticking part 3 sticking to the surface of the wafer W is provided only in the outer edge part of the protection member 1, the outer periphery sticking part 3 does not stick to the device D. For this reason, even if the protection member 1 is peeled from the surface WS of the wafer W, the synthetic resin having adhesiveness constituting the outer peripheral sticking portion 3 does not adhere to the device D on the surface WS of the wafer W. Therefore, the device D can be prevented from being damaged or contaminated. Therefore, according to the protective member 1, even in the case of the wafer W in which the surface of the device D is formed flat without forming bumps or the like, the thinning is possible and the device D on the surface WS of the wafer W is damaged. It is possible to suppress contamination.

前述した実施形態では、保護部材1は、研削工程においてウエーハWの表面WSのデバイスDを保護している。しかしながら、本発明は、これに限定されることなく、切削工程、レーザー加工工程などの種々のデバイスDの製造工程に適用しても良い。   In the embodiment described above, the protection member 1 protects the device D on the surface WS of the wafer W in the grinding process. However, this invention is not limited to this, You may apply to the manufacturing process of various devices D, such as a cutting process and a laser processing process.

また、本発明は上記実施形態に限定されるものではない。即ち、本発明の骨子を逸脱しない範囲で種々変形して実施することができる。   The present invention is not limited to the above embodiment. That is, various modifications can be made without departing from the scope of the present invention.

1 ウエーハ保護部材
3 外周貼着部
4 デバイス保護部
6 面
W ウエーハ
WS 表面
D デバイス
GR 外周領域
DESCRIPTION OF SYMBOLS 1 Wafer protection member 3 Outer periphery sticking part 4 Device protection part 6 Surface W Wafer WS Surface D Device GR Peripheral area

Claims (1)

デバイスが形成されたウエーハの表面を保護する保護部材であって、
デバイスが形成されていないウエーハの外周領域に貼着する外周貼着部と、
該外周貼着部に囲繞されデバイスと当接し非貼着状態でデバイスを保護するデバイス保護部と、から構成され、該外周貼着部と該デバイス保護部のウエーハの表面が当接する面は同一面で形成され、
前記外周貼着部は、前記デバイス保護部よりも前記ウエーハから離れた基材の薄肉部の表面に配置された接着剤で構成され
前記薄肉部は、前記デバイス保護部の面に直交する面と前記デバイス保護部の前記面に平行な前記表面とにより形成されていること、を特徴とするウエーハ保護部材。
A protective member for protecting the surface of the wafer on which the device is formed,
An outer periphery sticking part that is attached to the outer peripheral region of the wafer where the device is not formed,
A device protection part that is surrounded by the outer peripheral adhesive part and that contacts the device and protects the device in a non-adhered state, and the surface of the outer peripheral adhesive part and the surface of the wafer of the device protective part that contact each other are the same Formed with a surface,
The outer periphery sticking part is composed of an adhesive disposed on the surface of the thin part of the base material away from the wafer than the device protection part ,
The thin-walled portion is formed by a surface orthogonal to the surface of the device protection portion and the surface parallel to the surface of the device protection portion .
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JP4462997B2 (en) * 2003-09-26 2010-05-12 株式会社ディスコ Wafer processing method
JP2005116948A (en) * 2003-10-10 2005-04-28 Nitto Denko Corp Semiconductor wafer processing method, and double-faced adhesive sheet
JP2005109433A (en) * 2004-03-31 2005-04-21 Disco Abrasive Syst Ltd Method for abrading semiconductor wafer and protecting member of bump for abrading
JP2005303126A (en) * 2004-04-14 2005-10-27 Nec Electronics Corp Protecting sheet for semiconductor wafer
US7405108B2 (en) * 2004-11-20 2008-07-29 International Business Machines Corporation Methods for forming co-planar wafer-scale chip packages
JP4678240B2 (en) * 2005-05-27 2011-04-27 トヨタ自動車株式会社 Manufacturing method of semiconductor device
CN101925996B (en) * 2008-01-24 2013-03-20 布鲁尔科技公司 Method for reversibly mounting device wafer to carrier substrate
JP5495647B2 (en) * 2009-07-17 2014-05-21 株式会社ディスコ Wafer processing method
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