JP5991206B2 - Semiconductor module and inverter module - Google Patents

Description

  The present invention relates to a semiconductor module and an inverter module.

  In the semiconductor device disclosed in Patent Document 1 or the like, each gate of the high-side IGBT element and the low-side IGBT element in the bridge circuit of the inverter device is connected to one end of each signal wiring member of the signal connector via a bonding wire. In addition, a pulse signal for turning on / off the IGBT element is input to the other end side of each signal wiring member.

Japanese Patent No. 4695041

  By the way, when semiconductor switching elements are connected in parallel so that a large current can flow, even if the input / output terminals are connected in parallel, the signal lines are connected in parallel from the viewpoint of dealing with characteristic variations of each semiconductor switching element and protection. They are not connected and need to be pulled out. When one signal connector for taking out a signal line from the control terminal is provided for one semiconductor switching element, the number of signal connectors is required as many as the number of semiconductor switching elements, and the physique of the apparatus increases as the number of signal connectors increases. turn into.

  An object of the present invention is to enable miniaturization of a semiconductor module including a plurality of semiconductor switching elements and signal connectors connected in parallel.

In the first aspect of the present invention, the plurality of semiconductor switching elements connected in parallel to each other and the signal wiring material are embedded in the signal wiring material holding member, and one end of the signal wiring material is exposed from the signal wiring material holding member. And a signal connector in which the other end of the signal wiring material protrudes from the signal wiring material holding member and serves as a connector connection portion. The signal connector includes a signal wiring material holding member common to the plurality of semiconductor switching elements, and a signal wiring material for each semiconductor switching element embedded therein, and the signal wiring for each semiconductor switching element. Ri Na wire bonding portion of the timber is arranged in a stepped, of the signal wiring member for each of the semiconductor switching elements One even without is summarized as Rukoto that have a bending portion for equalizing the line length.

  According to the first aspect of the present invention, in the signal connector, the signal wiring material is embedded in the signal wiring material holding member, and one end of the signal wiring material is exposed from the signal wiring material holding member and is connected to the control terminal of the semiconductor switching element. The wire bonding portion is connected by a bonding wire, and the other end of the signal wiring material protrudes from the signal wiring material holding member to be a connector connection portion. Here, in the signal connector, a signal wiring material for each semiconductor switching element is embedded in a signal wiring material holding member common to a plurality of semiconductor switching elements connected in parallel to each other, and a wire bond of the signal wiring material for each semiconductor switching element is embedded. The parts are arranged in a staircase pattern. As a result, it is possible to reduce the size of the semiconductor module including a plurality of semiconductor switching elements and signal connectors connected in parallel.

  As described in claim 2, in the semiconductor module according to claim 1, in the signal connector, connector connection portions of signal wiring members for each semiconductor switching element may be arranged in a line.

As described in claim 3, extends in the semiconductor module according to claim 1 or 2, in the direction of input and output wiring member that is connected to the input and output terminals of the semiconductor switching element crosses the arrangement direction of the connector connecting portion It is good to be.

As described in claim 4 , each of the U-phase upper arm, the U-phase lower arm, the V-phase upper arm, the V-phase lower arm, the W-phase upper arm, and the W-phase lower arm is respectively defined in claims 1 to 3. It is good to be comprised with the semiconductor module of any one of these.

  ADVANTAGE OF THE INVENTION According to this invention, size reduction can be achieved in the semiconductor module provided with the several semiconductor switching element and signal connector which were connected in parallel.

The circuit block diagram of the inverter apparatus in embodiment. (A) is a schematic plan view of an inverter apparatus, (b) is a schematic front view of an inverter apparatus. (A) is a top view in the U-phase upper arm part of an inverter apparatus, (b) is a front view in the U-phase upper arm part of an inverter apparatus. The perspective view of a signal connector. (A) is a top view which shows the signal pin in a signal connector, (b) is a front view which shows the signal pin in a signal connector. The perspective view which shows the signal pin in a signal connector. Explanatory drawing in the case of the wire bonding performed using a wire bonding apparatus. (A) is a top view in the U-phase upper arm part of another example inverter apparatus, (b) is a front view in the U-phase upper arm part of another example inverter apparatus. (A) is a top view which shows the signal pin in the signal connector of another example, (b) is a front view which shows the signal pin in the signal connector of another example. (A) is a top view in the upper arm part of the U phase of the inverter apparatus for comparison, (b) is a front view in the upper arm part of the U phase of the inverter apparatus for comparison.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings.
This embodiment is embodied in a vehicle inverter device, and an electrical configuration of the vehicle inverter device will be described with reference to FIG.

  As shown in FIG. 1, the vehicle inverter device 10 is a three-phase inverter device and includes an inverter circuit 20. Inverter circuit 20 includes U-phase upper arm 21, U-phase lower arm 22, V-phase upper arm 23, V-phase lower arm 24, W-phase upper arm 25, and W-phase lower arm 26.

  Each of the arms 21 to 26 includes a plurality of semiconductor switching elements in which one arm is connected in parallel. In the present embodiment, one arm is constituted by two semiconductor switching elements Q1, Q2 connected in parallel. Further, feedback diodes D1 and D2 are connected in antiparallel to the semiconductor switching elements Q1 and Q2, respectively. Each of the arms 21 to 26 is modularized as shown in FIG. 3, and the arms 21 to 26 are also modularized (integrated) as shown in FIG.

  IGBTs (insulated gate bipolar transistors) are used for the semiconductor switching elements Q1 and Q2. A power MOSFET may be used as the semiconductor switching element. When an IGBT is used as a semiconductor switching element, it has a gate terminal and a collector / emitter terminal. The gate terminal becomes the control terminal of the element, and the collector / emitter terminal becomes the input / output terminal of the element. When a power MOSFET is used as a semiconductor switching element, it has a gate terminal and a source / drain terminal. The gate terminal serves as a control terminal for the element, and the source / drain terminal serves as an input / output terminal for the element.

  In inverter circuit 20, U-phase upper arm 21 and U-phase lower arm 22, V-phase upper arm 23 and V-phase lower arm 24, W-phase upper arm 25 and W-phase lower arm 26 are connected in series. U-phase upper arm 21, V-phase upper arm 23, and W-phase upper arm 25 are connected to a positive electrode input terminal (P terminal), and a positive electrode input terminal (P terminal) is connected to the positive electrode of the in-vehicle battery. The U-phase lower arm 22, the V-phase lower arm 24, and the W-phase lower arm 26 are connected to the negative input terminal (N terminal), and the negative input terminal (N terminal) is connected to the negative electrode of the in-vehicle battery.

  A connection point between the U-phase upper arm 21 and the U-phase lower arm 22 is connected to a U-phase output terminal. The connection point between the V-phase upper arm 23 and the V-phase lower arm 24 is connected to the V-phase output terminal. Furthermore, the connection point between the W-phase upper arm 25 and the W-phase lower arm 26 is connected to the W-phase output terminal. The U-phase output terminal, the V-phase output terminal, and the W-phase output terminal are connected to a three-phase AC motor as a vehicle-mounted motor.

  The gate terminals of the semiconductor switching elements Q1 and Q2 constituting each arm of the inverter circuit 20 are connected to the drive circuit 30, and the controller 40 is connected to the drive circuit 30. A gate voltage signal is sent from drive circuit 30 to the gate terminals of semiconductor switching elements Q1, Q2. The drive circuit 30 is mounted on the drive circuit board 31. The controller 40 switches each semiconductor switching element Q1, Q2 via the drive circuit 30. That is, the inverter circuit 20 converts the direct current supplied from the battery into a three-phase alternating current having an appropriate frequency and supplies the converted three-phase alternating current to the winding of each phase of the motor. That is, the winding of each phase of the motor is energized by the switching operation of the semiconductor switching elements Q1, Q2 constituting each arm, and the motor can be driven.

  When switching the semiconductor switching elements Q1 and Q2, in each of the arms 21 to 26, the two semiconductor switching elements Q1 and Q2 connected in parallel are simultaneously turned on / off, and the current is divided.

Next, the structure of the vehicle inverter device 10 will be described with reference to FIGS.
2 to 7, the horizontal plane is defined by the orthogonal X and Y directions, and the vertical direction is defined by the Z direction.

  As shown in FIG. 3, the semiconductor module Ms includes a signal connector 60. In the signal connector 60, metal signal pins 62 and 63 as signal wiring members are embedded in a resin base 61 as a signal wiring member holding member. One ends of the signal pins 62 and 63 are exposed from the resin base 61 to form wire bond portions 62a and 63a connected to the gate terminals of the semiconductor switching elements Q1 and Q2 by bonding wires W1 and W2. Further, the other ends of the signal pins 62 and 63 protrude from the resin base 61 to form connector connecting portions 62b and 63b. Then, the gate terminals of the semiconductor switching elements Q1, Q2 are connected to the drive circuit board 31 via the signal pins 62, 63. The U-phase upper arm 21, the U-phase lower arm 22, the V-phase upper arm 23, the V-phase lower arm 24, the W-phase upper arm 25, and the W-phase lower arm 26 are each composed of a semiconductor module Ms. The inverter module Mi is configured by using one semiconductor module Ms and six signal connectors 60. As shown in FIG. 2, the semiconductor modules Ms constituting the arms 21 to 26 are arranged in alignment. Specifically, two semiconductor modules Ms are arranged in the X direction and three semiconductor modules Ms are arranged in the Y direction.

  As shown in FIG. 2, the vehicle inverter device 10 includes a drive circuit board 31 and a water-cooled cooler 50. The water-cooled cooler 50 is positioned horizontally, and cooling water as a refrigerant is introduced from the inlet pipe P1 into the cooler 50 and discharged from the outlet pipe P2.

  A ceramic substrate 70 as an insulating member is disposed on the upper surface of the cooler 50. A metal layer 71 is formed on the lower surface of the ceramic substrate 70, and a wiring layer 72 is formed on the upper surface of the ceramic substrate 70. Specifically, for example, the ceramic substrate 70 is made of an AlN substrate, the metal layer 71 is made of an aluminum layer, and the wiring layer 72 is made of an aluminum layer and a Ni plating layer on the surface thereof. A metal layer 71 is joined to the upper surface of the cooler 50 by brazing or the like.

The U-phase upper arm 21 will be described with reference to FIG. The other arms 22 to 26 have the same configuration.
In FIG. 3, the signal connector 60 is fixed at a position close to the ceramic substrate 70 on the upper surface of the cooler 50. In the signal connector 60, signal pins 62 and 63 for the semiconductor switching elements Q1 and Q2 are embedded in a resin base 61 common to a plurality (two) of the semiconductor switching elements Q1 and Q2, respectively. Wire bond portions 62a and 63a of the signal pins 62 and 63 are arranged in a staircase pattern.

  A drive circuit board 31 is disposed above the signal connector 60, and the drive circuit board 31 is positioned horizontally. The board on which the controller 40 is mounted is arranged in multiple stages with the drive circuit board 31, that is, on the drive circuit board 31.

  As shown in FIG. 3, the semiconductor switching element (chip) Q1 and the feedback diode (chip) D1 are joined to the upper surface of the wiring layer 72 by soldering or the like at a position where the semiconductor switching element (chip) Q1 and the feedback diode (chip) D1 approach. Similarly, on the upper surface of the wiring layer 72, the semiconductor switching element (chip) Q2 and the feedback diode (chip) D2 are joined to each other by soldering or the like. Thereby, the semiconductor switching elements Q1, Q2 and the feedback diodes D1, D2 are fixed to the outer surface (upper surface) of the cooler 50 via the ceramic substrate 70, and the semiconductor switching elements Q1, Q2 and the feedback diodes D1, D2 are fixed to the cooler 50. Thermally coupled to

  The upper surfaces of the semiconductor switching elements (chips) Q1, Q2 and the upper surfaces of the feedback diodes (chips) D1, D2 are joined to the bus bar 80 by soldering or the like. An extending portion 81 of the bus bar 80 is extended as a U-phase output terminal extending from the emitter terminals of the semiconductor switching elements Q1, Q2. That is, the extending portion 81 of the bus bar 80 as an input / output wiring member extending from the emitter terminals of the semiconductor switching elements Q1, Q2 is extended.

  As shown in FIGS. 4, 5, and 6, the signal connector 60 has five signal pins 62 and 63 as signal wiring members embedded in a resin base 61 made of resin. As shown in FIG. 3B, the resin base 61 is L-shaped as a whole, and includes a horizontal portion 61a and a standing portion 61b extending upward from one end thereof. Further, the horizontal portion 61a of the resin base 61 is formed in a staircase shape, and one end side of the five signal pins 62 is exposed in the first horizontal portion 64 of the staircase portion to form a wire bond portion 62a. The other end side of the projection protrudes from the upper surface of the standing portion 61b of the resin base 61 to form a connector connecting portion 62b. Further, one end side of the five signal pins 63 is exposed at the second horizontal portion 65 of the staircase portion to become a wire bond portion 63a, and the other end side of each signal pin 63 is the upper surface of the standing portion 61b of the resin base 61. Projecting from the connector connector 63b.

  One of the five signal pins 62 is for the gate voltage signal, two are for the anode and cathode of the temperature detection diode, and the rest are for current sensing and emitter terminals. As shown in FIGS. 5 and 6, the signal pin 62 constituting the signal line is bent in an L shape. That is, it extends in the X direction and the Z direction. One end of the signal pin 62 is exposed as a wire bonding portion 62a in the first horizontal portion 64 of the staircase portion of the resin base 61, and is connected to the gate terminal of the semiconductor switching element (chip) Q1 by the bonding wire W1. On the other hand, the upper end of the signal pin 62 protrudes from the upper surface of the resin base 61 and extends upward as a connector connection portion 62b. The connector connecting portion 62b penetrates the drive circuit board 31, and the connector connecting portion 62b and the drive circuit board 31 are connected by soldering or the like.

  Similarly, one of the five signal pins 63 is for the gate voltage signal, two are for the anode and cathode of the temperature detection diode, and the rest are for current sensing and emitter terminals. As shown in FIGS. 5 and 6, the signal pin 63 constituting the signal line is bent in an L shape. That is, it extends in the X direction and the Z direction. One end of the signal pin 63 is exposed as a wire bond portion 63a in the second horizontal portion 65 of the staircase portion of the resin base 61, and is connected to the gate terminal of the semiconductor switching element (chip) Q2 by the bonding wire W2. On the other hand, the upper end of the signal pin 63 protrudes from the upper surface of the resin base 61 and extends upward as a connector connection portion 63b. The connector connecting portion 63b penetrates the drive circuit board 31, and the connector connecting portion 63b and the drive circuit board 31 are connected by soldering or the like.

The widths of the wire bond portions 62a and 63a are formed wider than the connector connection portions 62b and 63b for wire bonding.
In the signal connector 60, connector connecting portions 62b and 63b of signal pins 62 and 63 provided corresponding to the semiconductor switching elements Q1 and Q2 are alternately arranged in a line in the Y direction. Therefore, the connection between the connector connection portions 62b and 63b of the signal pins 62 and 63 and the drive circuit board 31 is facilitated. That is, the conductor pattern electrically connected to the connector connecting portions 62b and 63b in the drive circuit board 31 can be easily routed.

As shown in FIGS. 5 and 6, the signal pin 63 has a bent portion 66 for equalizing the wiring length at a portion extending in the Z direction. The bending portion 66 is bent in a U shape.
Furthermore, as shown in FIG. 3, a bus bar 82 is joined to the upper surface of the wiring layer 72 by soldering or the like. A bus bar 82 as an input / output wiring member is extended as a positive input terminal (P terminal) extending from each collector terminal of two semiconductor switching elements Q1 and Q2 connected in parallel. The bus bar extending portion 81 and the bus bar 82 extend in the X direction. Therefore, it is orthogonal to the Y direction which is the arrangement direction of the connector connecting portions 62b and 63b of the signal pins 62 and 63 of the gate terminal. As described above, the bus bar extending portion 81 and the bus bar 82 serving as input / output wiring members connected to the input / output terminals of the semiconductor switching elements Q1 and Q2 intersect the arrangement direction (Y direction) of the connector connecting portions 62b and 63b. It extends in the direction (X direction).

  In FIG. 2, in U-phase lower arm 22, bus bar 80 joined to the emitter terminals of semiconductor switching elements Q <b> 1, Q <b> 2 of U-phase upper arm 21 is the collector of semiconductor switching elements Q <b> 1, Q <b> 2 of U-phase lower arm 22. Connected to the terminal. Further, a negative input terminal (bus bar) is extended from the emitter terminals of the semiconductor switching elements Q1, Q2 of the U-phase lower arm 22. Similarly, in the V-phase upper arm 23, a bus bar is extended as a V-phase output terminal extending from the emitter terminals of the semiconductor switching elements Q1, Q2, and a positive input terminal (bus bar) extending from the collector terminal of the semiconductor switching elements Q1, Q2. ) Is extended. In V-phase lower arm 24, the bus bar joined to the emitter terminals of semiconductor switching elements Q1, Q2 of V-phase upper arm 23 is connected to the collector terminals of semiconductor switching elements Q1, Q2 of V-phase lower arm 24. Further, a negative input terminal (bus bar) is extended from the emitter terminals of the semiconductor switching elements Q1, Q2 of the V-phase lower arm 24. In W-phase upper arm 25, a bus bar is extended as a W-phase output terminal extending from the emitter terminals of semiconductor switching elements Q1, Q2, and a positive input terminal (bus bar) extending from the collector terminals of semiconductor switching elements Q1, Q2 is extended. Has been. In W-phase lower arm 26, the bus bar joined to the emitter terminals of semiconductor switching elements Q1, Q2 of W-phase upper arm 25 is connected to the collector terminals of semiconductor switching elements Q1, Q2 of W-phase lower arm 26. Further, a negative input terminal (bus bar) is extended from the emitter terminals of the semiconductor switching elements Q1, Q2 of the W-phase lower arm 26.

Next, the operation of the vehicle inverter device 10 will be described.
The U-phase upper arm 21, U-phase lower arm 22, V-phase upper arm 23, V-phase lower arm 24, W-phase upper arm 25, and W-phase in the inverter circuit 20 by the gate voltage signal from the drive circuit 30 on the drive circuit board 31. The semiconductor switching elements Q1, Q2 constituting the lower arm 26 perform a switching operation. At this time, the two semiconductor switching elements Q1 and Q2 that constitute one arm and are connected in parallel are turned on and off in synchronization. By the switching operation of the semiconductor switching elements Q1 and Q2, the direct current supplied from the battery is converted into a three-phase alternating current having an appropriate frequency and supplied to the windings of each phase of the motor.

The semiconductor switching elements Q1, Q2 generate heat with the switching operation of the semiconductor switching elements Q1, Q2. This heat is exchanged with the cooling water in the cooler 50.
Here, the bent portion 66 is provided in the upper signal pin 63 of the signal pins 62 and 63, and the length from the wire bond portion to the upper end of the pin is the lower signal pin 62 and the upper signal pin. 63 and the same length. That is, the distance from the wire bond portion to the joint portion with the drive circuit board 31 is made equal by the two signal pins 62 and 63 by the bending portion 66. Thereby, equalization of the length of the signal pin can be achieved.

  During assembly, chips (Q 1, Q 2, D 1, D 2) are soldered on the wiring layer 72, and then the signal connector 60 is bonded to the upper surface of the cooler 50. Thereafter, wire bonding is performed by ultrasonic waves or the like, the chips (Q1, Q2) and the signal pins 62, 63 of the signal connector 60 are connected by the bonding wires W1, W2, and then the bus bars 80, 82 are bonded. Thereafter, the drive circuit board 31 is disposed and the signal pins 62 and 63 of the signal connector 60 are connected to the drive circuit board 31.

  As shown in FIG. 7, wire bonding is performed using a wire bonding apparatus. The tip portion of the rod-shaped tool Tw in the wire bonding apparatus is thin, but thick at the portion away from the tip. Due to this shape restriction, the height of the tip of the rod-shaped tool Tw is close to the wire bond portion. When a certain object is arranged, it interferes with the tip of the tool Tw. That is, the width (W1 dimension) in the X direction is increased in the second horizontal portion 65 of the resin base 61 of the signal connector 60 so as to separate the standing portion 61b from the wire bond portion. On the other hand, in the first horizontal portion 64 of the resin base 61 of the signal connector 60, the standing portion 61b and the wire bond portion are separated from each other, so the width in the X direction of the first horizontal portion 64 (W2 dimension). May be small.

  In addition, the signal connector 60 is shared by the semiconductor switching elements Q1 and Q2, and the signal connector 60 has a structure in which the tip end portion of the signal pin is exposed as a wire bond portion in the stepped portion of the signal connector 60. Can be reduced. Further, by reducing the signal connector 60, it is possible to secure a space for drawing out the bus bar from the collector / emitter terminals of the semiconductor switching elements Q1, Q2 in the inverter device.

This downsizing will be described while comparing the present embodiment of FIG. 3 with the comparative example of FIG.
As a comparative example, in FIG. 10, as the signal connectors 100 and 101, one end of the signal pin 103 is exposed on the upper surface of the resin base 102, and this portion is a wire bond portion. Further, signal connectors 100 and 101 are provided for each of the semiconductor switching elements (chips) Q1 and Q2. That is, the signal connector 100 corresponding to the semiconductor switching element Q1 and the signal connector 101 corresponding to the semiconductor switching element Q2 are juxtaposed in the Y direction on the upper surface of the cooler 50. The interval between the signal pins 103 is determined by the insulation distance at the wide wire bond portion and the insertability of the bar-shaped tool Tw.

  On the other hand, in the present embodiment, as shown in FIG. 3, the gate from the two semiconductor switching elements (chips) Q1 and Q2 to the drive circuit substrate 31 using only one signal connector 60 having a stepped portion. A voltage signal line is secured. Here, since the wide wire bond portions 62a and 63a are arranged so as to be divided into the horizontal portions 64 and 65, the insulation distance at the wire bond portion and the insertability of the rod-shaped tool Tw are ensured. Therefore, the interval between the signal pins 62 and 63 is determined by the insulation distance at the narrow connector connecting portions 62b and 63b. Accordingly, in comparison between the width L1 in the Y direction in FIG. 3 and the width L2 in the Y direction in FIG. 10, the width dimension (L1) in FIG. 3 can be made smaller than the width dimension (L2) in FIG. it can. As a result, downsizing is achieved. That is, the lead-out portion by the bus bar is provided outside the signal pin (although it is taken out), the required width in the Y direction of the signal pin may be small, and the size can be reduced. In the inverter module Mi, as shown in FIG. 2, two semiconductor modules Ms are arranged in the X direction, and three semiconductor modules Ms are arranged in the Y direction. Therefore, the size can be reduced by three times (= 3 · (L1−L2)) in the Y direction. In the X direction, the size W2 in FIG.

According to the above embodiment, the following effects can be obtained.
(1) As a configuration of the semiconductor module Ms, two semiconductor switching elements Q1, Q2 and a signal connector 60 are provided. In the signal connector 60, signal pins 62 and 63 for the semiconductor switching elements Q1 and Q2 are embedded in a resin base 61 common to the two semiconductor switching elements Q1 and Q2, and the signal pins 62 and 63 for the semiconductor switching elements Q1 and Q2, respectively. 63 wire bond portions 62a and 63a are arranged stepwise. Thereby, size reduction is achieved compared with the case where a signal connector is provided for each semiconductor switching element. Therefore, it is possible to reduce the size of the semiconductor module including the two semiconductor switching elements Q1, Q2 and the signal connector 60 connected in parallel.

  (2) In the signal connector 60, the connector connecting portions 62b and 63b of the signal pins 62 and 63 for each semiconductor switching element are arranged in a line. Thereby, when connecting with the drive circuit board 31, the conductor pattern electrically connected to each connector connection part 62b, 63b in the drive circuit board 31 can be easily routed.

  (3) Since the signal pin 63 of the signal pins 62 and 63 for each of the semiconductor switching elements Q1 and Q2 has the bent portion 66 for equalizing the wiring length, the wiring length can be equalized.

  (4) The bus bar extending portion 81 and the bus bar 82 connected to the collector / emitter terminals of the semiconductor switching elements Q1 and Q2 are extended in a direction crossing the arrangement direction of the connector connecting portions 62b and 63b. In other words, the arrangement direction of the connector connecting portions 62b and 63b can be reduced without arranging the bus bar and the connector connecting portion in the direction in which the inlet pipe P1 and the outlet pipe P2 are arranged, so that the bus bar can be easily pulled out and downsized. Can be planned.

  (5) As the configuration of the inverter module Mi, each of the U-phase upper arm 21, the U-phase lower arm 22, the V-phase upper arm 23, the V-phase lower arm 24, the W-phase upper arm 25, and the W-phase lower arm 26 includes Each is constituted by the semiconductor module Ms described above. Therefore, it is possible to reduce the size of the inverter module Mi.

The embodiment is not limited to the above, and may be embodied as follows, for example.
In FIGS. 3 and 4, the connector connection portions 62 b and 63 b of the signal pins 62 and 63 in the signal connector 60 are arranged in a line, but as shown in FIGS. 8 and 9, the signal pins 62 and 63 in the signal connector 60 are arranged. The connector connecting portions 62b and 63b may be arranged in two rows. That is, the connector connecting portions 62b of the five signal pins 62 provided corresponding to one semiconductor switching element Q1 are arranged in a line in the Y direction. On the other hand, connector connecting portions 63b of five signal pins 63 provided corresponding to one semiconductor switching element Q2 are arranged in a line in the Y direction at positions shifted in the X direction. In this case, the distance between the signal pins 62 and the distance between the signal pins 63 are determined by the insulation distance and the insertion property of the bar-shaped tool Tw at the wide wire bond portion, but are overlapped in a step shape. The dimension in the Y direction can be reduced as compared with the ten comparative examples. Further, in this case, when three semiconductor modules Ms are arranged in the Y direction as shown in FIG. 2, the size can be further reduced in the Y direction as compared with FIG.

  The lower signal pin 62 and the upper signal pin 63 are not limited to the same length. It suffices if the difference in length is such that switching does not cause a problem. That is, it may be equalized so that current imbalance does not occur.

  The lower signal pin 62 and the upper signal pin 63 may be bent at both ends, and may have the same length. In short, it is sufficient that at least one of the first signal pin and the second signal pin has a bent portion for equalizing the wiring length. In a broad sense, at least one of the signal wiring members for each semiconductor switching element may be configured to have a bent portion for equalizing the wiring length.

  In the embodiment, the number of semiconductor switching elements connected in parallel in one arm is “2” and the number of stages in the signal connector is “2”. However, the configuration is not limited to this. For example, the number of semiconductor switching elements connected in parallel in one arm may be “3” or more, and the number of stages in the signal connector may be “2” or more. That is, the number of semiconductor switching elements connected in parallel and the number of stages need not be the same. For example, when the number of semiconductor switching elements connected in parallel is “3”, the number of stages at the signal connector is “3”, and when the number of semiconductor switching elements connected in parallel is “4”, the number of stages at the signal connector is “ If the number of semiconductor switching elements connected in parallel is the same as the number of stages as in “4”, the semiconductor switching elements connected to each stage can be divided, so that wire bonding is easy.

  The signal pins 62 and 63 are formed in an L shape in the resin base 61, but may be extended sideways. That is, it may extend from the wire bond portion in the horizontal direction as it is, and may protrude from the resin base 61 in the horizontal direction as a connector connection portion.

  21 ... U-phase upper arm, 22 ... U-phase lower arm, 23 ... V-phase upper arm, 24 ... V-phase lower arm, 25 ... W-phase upper arm, 26 ... W-phase lower arm, 60 ... Signal connector, 61 ... Resin 62, signal pin, 62a, wire bond portion, 62b, connector connection portion, 63 ... signal pin, 63a ... wire bond portion, 63b ... connector connection portion, 66 ... bending portion, 81 ... extension portion, 82 ... busbar , Mi ... inverter module, Ms ... semiconductor module, Q1 ... semiconductor switching element, Q2 ... semiconductor switching element, W1 ... bonding wire, W2 ... bonding wire.

Claims (4)

A plurality of semiconductor switching elements connected in parallel to each other;
The signal wiring material is embedded in the signal wiring material holding member, and one end of the signal wiring material is exposed from the signal wiring material holding member and becomes a wire bond portion connected to the control terminal of the semiconductor switching element by a bonding wire. A signal connector in which the other end of the signal wiring material protrudes from the signal wiring material holding member to become a connector connection portion,
A semiconductor module comprising:
In the signal connector, a signal wiring material for each semiconductor switching element is embedded in a signal wiring material holding member common to the plurality of semiconductor switching elements, and wire bonding portions of the signal wiring materials for the semiconductor switching elements are arranged in a stepped manner. Ri Na is at least one semiconductor module, wherein Rukoto that have a bending portion for equalizing the line length of the signal wiring member for each of the semiconductor switching element.   2. The semiconductor module according to claim 1, wherein the signal connector includes connector connection portions of signal wiring members for each semiconductor switching element arranged in a line. 3. The semiconductor module according to claim 1, wherein an input / output wiring member connected to an input / output terminal of the semiconductor switching element extends in a direction intersecting with an arrangement direction of the connector connecting portions. U-phase upper arm, U-phase lower arm, V-phase upper arm, V-phase lower arm, W-phase upper arm, each arm of W-phase lower arm, respectively, the semiconductor according to any one of claims 1 to 3 An inverter module characterized by being composed of modules.