JP2014138474A - Inverter device for vehicle - Google Patents

Inverter device for vehicle Download PDF

Info

Publication number
JP2014138474A
JP2014138474A JP2013005469A JP2013005469A JP2014138474A JP 2014138474 A JP2014138474 A JP 2014138474A JP 2013005469 A JP2013005469 A JP 2013005469A JP 2013005469 A JP2013005469 A JP 2013005469A JP 2014138474 A JP2014138474 A JP 2014138474A
Authority
JP
Japan
Prior art keywords
semiconductor switching
cooler
switching element
switching elements
drive circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013005469A
Other languages
Japanese (ja)
Inventor
Atsuto Kimura
篤人 木村
Shigekazu Higashimoto
繁和 東元
Kazuyoshi Takeuchi
万善 竹内
Munehiko Masutani
宗彦 増谷
Kazunobu Kamiya
和伸 神谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Industries Corp
Original Assignee
Toyota Industries Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Industries Corp filed Critical Toyota Industries Corp
Priority to JP2013005469A priority Critical patent/JP2014138474A/en
Publication of JP2014138474A publication Critical patent/JP2014138474A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

PROBLEM TO BE SOLVED: To provide an inverter device for a vehicle which easily shields electromagnetic waves and achieves high design flexibility of a wiring material of a semiconductor switching element.SOLUTION: An inverter device for a vehicle includes: semiconductor switching elements S1 to S6; a cooler 50 where the semiconductor switching elements S1 to S6 are fixed to an outer surface through a ceramic substrate 70; and a drive circuit board 31 connected with gate terminals of the semiconductor switching elements S1 to S6. The drive circuit board 31 and the semiconductor switching elements S1 to S6 are disposed so as to sandwich the cooler 50. Signal pins 86, 88 extending from the gate terminals of the semiconductor switching elements S1 to S6 extend to the cooler 50 side.

Description

本発明は、車両用インバータ装置に関するものである。   The present invention relates to a vehicle inverter device.

特許文献１に開示の電力用半導体装置においては、放熱板の上に一対の絶縁基板が配置され、ケースの下面開口部が放熱板の上面において絶縁基板および絶縁基板に実装された半導体素子を囲っている。さらに、ケースの上面開口側においてプリント基板およびその下にシールド板を配置して、ねじ締結によりプリント基板およびシールド板を固定する構造が開示されている。   In the power semiconductor device disclosed in Patent Document 1, a pair of insulating substrates is disposed on the heat sink, and the lower surface opening of the case surrounds the insulating substrate and the semiconductor element mounted on the insulating substrate on the upper surface of the heat sink. ing. Furthermore, a structure is disclosed in which a printed circuit board and a shield plate are arranged on the upper surface opening side of the case, and the printed circuit board and the shield plate are fixed by screw fastening.

特開２００６−６６４２７号公報JP 2006-66427 A

ところで、半導体スイッチング素子と制御基板を有する車両用インバータ装置においては制御基板が電磁波（ノイズ）による影響を受けるので、電磁波を遮蔽する機能を持たせるためにはシールド板を半導体スイッチング素子と制御基板の間に配置する必要がある。   By the way, in a vehicle inverter device having a semiconductor switching element and a control board, the control board is affected by electromagnetic waves (noise). Therefore, in order to have a function of shielding electromagnetic waves, a shield plate is provided between the semiconductor switching element and the control board. Need to be placed between.

本発明の目的は、容易に電磁波を遮蔽することができるとともに半導体スイッチング素子の配線材の設計自由度が高い車両用インバータ装置を提供することにある。   An object of the present invention is to provide a vehicle inverter device that can easily shield electromagnetic waves and has a high degree of freedom in designing a wiring material of a semiconductor switching element.

請求項１に記載の発明では、アームを構成する半導体スイッチング素子と、前記半導体スイッチング素子に対向する部位が少なくとも金属部となっており、外面に絶縁部材を介して前記半導体スイッチング素子が固定される冷却器と、前記半導体スイッチング素子の制御端子と接続される制御基板と、を備えた車両用インバータ装置であって、前記制御基板と前記半導体スイッチング素子が前記冷却器を挟んで配置されるとともに、前記半導体スイッチング素子の制御端子から延びる配線材が前記冷却器側に延設されてなることを要旨とする。   According to the first aspect of the present invention, the semiconductor switching element constituting the arm and the portion facing the semiconductor switching element are at least a metal part, and the semiconductor switching element is fixed to the outer surface via an insulating member. A vehicle inverter device comprising a cooler and a control board connected to a control terminal of the semiconductor switching element, wherein the control board and the semiconductor switching element are disposed across the cooler, The gist is that a wiring material extending from the control terminal of the semiconductor switching element extends to the cooler side.

請求項１に記載の発明によれば、冷却器は、半導体スイッチング素子に対向する部位が少なくとも金属部となっている。半導体スイッチング素子の制御端子と接続される制御基板と、半導体スイッチング素子が冷却器を挟んで配置されている。よって、半導体スイッチング素子から発生する電磁波は制御基板に対し冷却器により遮蔽される。また、半導体スイッチング素子の制御端子から延びる配線材が冷却器側に延設されるので、半導体スイッチング素子の配線材を容易に配置することができる。その結果、容易に電磁波を遮蔽することができるとともに半導体スイッチング素子の配線材の設計自由度を高くすることができる。   According to the first aspect of the present invention, the cooler has at least a metal portion at a portion facing the semiconductor switching element. A control board connected to the control terminal of the semiconductor switching element and the semiconductor switching element are arranged with a cooler interposed therebetween. Therefore, the electromagnetic wave generated from the semiconductor switching element is shielded from the control board by the cooler. Further, since the wiring material extending from the control terminal of the semiconductor switching element is extended to the cooler side, the wiring material of the semiconductor switching element can be easily arranged. As a result, the electromagnetic wave can be easily shielded and the degree of freedom in designing the wiring material of the semiconductor switching element can be increased.

請求項２に記載のように、請求項１に記載の車両用インバータ装置において、前記冷却器における冷媒の入口と出口を結ぶ線の両側に前記配線材がそれぞれ延設されているとよい。   As described in claim 2, in the vehicle inverter device according to claim 1, it is preferable that the wiring members extend on both sides of a line connecting the inlet and the outlet of the refrigerant in the cooler.

請求項２に記載の発明によれば、片側のみに配置した場合に比べ小型化可能である。
請求項３に記載のように、請求項１または２に記載の車両用インバータ装置において、前記半導体スイッチング素子の入出力端子から延びる配線材が反冷却器側に延設されてなるとよい。 According to the invention described in claim 2, it is possible to reduce the size as compared with the case where it is arranged only on one side.
According to a third aspect of the present invention, in the vehicle inverter device according to the first or second aspect, the wiring member extending from the input / output terminal of the semiconductor switching element may be extended to the anti-cooler side.

請求項３に記載の発明によれば、半導体スイッチング素子の入出力端子から延びる配線材の自由度を高くでき、配線材を短縮することができる。   According to the third aspect of the invention, the degree of freedom of the wiring material extending from the input / output terminal of the semiconductor switching element can be increased, and the wiring material can be shortened.

本発明によれば、容易に電磁波を遮蔽することができるとともに半導体スイッチング素子の配線材の設計自由度を高くすることができる。   ADVANTAGE OF THE INVENTION According to this invention, electromagnetic waves can be shielded easily and the design freedom of the wiring material of a semiconductor switching element can be made high.

（ａ）は実施形態における車両用インバータ装置の平面図、（ｂ）は（ａ）のＡ−Ａ線での縦断面図。(A) is a top view of the inverter apparatus for vehicles in embodiment, (b) is a longitudinal cross-sectional view in the AA line of (a). 車両用インバータ装置の回路構成図。The circuit block diagram of the inverter apparatus for vehicles. （ａ）は別例の車両用インバータ装置の要部を示す概略平面図、（ｂ）は（ａ）のＡ−Ａ線での縦断面図。(A) is a schematic plan view which shows the principal part of the inverter apparatus for vehicles of another example, (b) is a longitudinal cross-sectional view in the AA line of (a). 別例の車両用インバータ装置の縦断面図。The longitudinal cross-sectional view of the inverter apparatus for vehicles of another example. （ａ）は比較のための車両用インバータ装置の平面図、（ｂ）は（ａ）のＡ−Ａ線での縦断面図。(A) is a top view of the inverter apparatus for vehicles for a comparison, (b) is a longitudinal cross-sectional view in the AA line of (a).

以下、本発明を具体化した一実施形態を図面に従って説明する。
車両用インバータ装置の電気的構成について、図２を用いて説明する。
図２に示すように、車両用インバータ装置（三相インバータ装置）１０は、インバータ回路２０を備えている。インバータ回路２０は、６個の半導体スイッチング素子Ｓ１〜Ｓ６が設けられている。各半導体スイッチング素子Ｓ１〜Ｓ６には、ＩＧＢＴ（絶縁ゲートバイポーラ型トランジスタ）が使用されている。なお、半導体スイッチング素子としてパワーＭＯＳＦＥＴを使用してもよい。半導体スイッチング素子Ｓ１〜Ｓ６としてＩＧＢＴを用いた場合、ゲート端子が素子の制御端子となり、コレクタ・エミッタ端子が素子の入出力端子となる。また、半導体スイッチング素子Ｓ１〜Ｓ６としてパワーＭＯＳＦＥＴを用いた場合、ゲート端子が素子の制御端子となり、ソース・ドレイン端子が素子の入出力端子となる。各半導体スイッチング素子Ｓ１〜Ｓ６には、それぞれ帰還ダイオードＤ１〜Ｄ６が逆並列接続されている。 DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings.
The electrical configuration of the vehicle inverter device will be described with reference to FIG.
As shown in FIG. 2, the vehicle inverter device (three-phase inverter device) 10 includes an inverter circuit 20. The inverter circuit 20 is provided with six semiconductor switching elements S1 to S6. An IGBT (insulated gate bipolar transistor) is used for each of the semiconductor switching elements S1 to S6. A power MOSFET may be used as the semiconductor switching element. When the IGBT is used as the semiconductor switching elements S1 to S6, the gate terminal becomes the control terminal of the element, and the collector / emitter terminal becomes the input / output terminal of the element. Further, when a power MOSFET is used as the semiconductor switching elements S1 to S6, the gate terminal becomes the control terminal of the element, and the source / drain terminals become the input / output terminals of the element. Feedback diodes D1 to D6 are connected in reverse parallel to the semiconductor switching elements S1 to S6, respectively.

インバータ回路２０において、第１および第２の半導体スイッチング素子Ｓ１，Ｓ２、第３および第４の半導体スイッチング素子Ｓ３，Ｓ４、第５および第６の半導体スイッチング素子Ｓ５，Ｓ６がそれぞれ直列に接続されている。第１、第３および第５の半導体スイッチング素子Ｓ１，Ｓ３，Ｓ５が正極入力端子（Ｐ端子）と接続され、正極入力端子（Ｐ端子）が車載バッテリの正極と接続される。また、第２、第４および第６の半導体スイッチング素子Ｓ２，Ｓ４，Ｓ６が負極入力端子（Ｎ端子）と接続され、負極入力端子（Ｎ端子）が車載バッテリの負極と接続される。   In the inverter circuit 20, the first and second semiconductor switching elements S1 and S2, the third and fourth semiconductor switching elements S3 and S4, and the fifth and sixth semiconductor switching elements S5 and S6 are connected in series, respectively. Yes. The first, third, and fifth semiconductor switching elements S1, S3, and S5 are connected to the positive electrode input terminal (P terminal), and the positive electrode input terminal (P terminal) is connected to the positive electrode of the in-vehicle battery. The second, fourth, and sixth semiconductor switching elements S2, S4, and S6 are connected to the negative input terminal (N terminal), and the negative input terminal (N terminal) is connected to the negative electrode of the in-vehicle battery.

Ｕ相用の上下のアームを構成する半導体スイッチング素子Ｓ１，Ｓ２の間の接続点はＵ相出力端子に接続されている。また、Ｖ相用の上下のアームを構成する半導体スイッチング素子Ｓ３，Ｓ４の間の接続点はＶ相出力端子に接続されている。さらに、Ｗ相用の上下のアームを構成する半導体スイッチング素子Ｓ５，Ｓ６の間の接続点はＷ相出力端子に接続されている。Ｕ相出力端子、Ｖ相出力端子およびＷ相出力端子は、車載モータとしての３相交流モータに接続される。   A connection point between the semiconductor switching elements S1 and S2 constituting the upper and lower arms for the U phase is connected to the U phase output terminal. Further, the connection point between the semiconductor switching elements S3 and S4 constituting the upper and lower arms for V phase is connected to the V phase output terminal. Furthermore, the connection point between the semiconductor switching elements S5 and S6 constituting the upper and lower arms for the W phase is connected to the W phase output terminal. The U-phase output terminal, the V-phase output terminal, and the W-phase output terminal are connected to a three-phase AC motor as a vehicle-mounted motor.

インバータ回路２０の各半導体スイッチング素子Ｓ１〜Ｓ６のゲート端子と駆動回路３０とが接続され、駆動回路３０にはコントローラ４０が接続されている。駆動回路３０からゲート信号が半導体スイッチング素子Ｓ１〜Ｓ６のゲート端子に送られる。駆動回路３０は制御基板としての駆動回路基板３１に搭載されている。コントローラ４０は駆動回路３０を介して各半導体スイッチング素子Ｓ１〜Ｓ６をスイッングさせる。つまり、インバータ回路２０はバッテリから供給される直流を適宜の周波数の３相交流に変換してモータの各相の巻線に供給する。即ち、半導体スイッチング素子Ｓ１〜Ｓ６のスイッチング動作によりモータの各相の巻線が通電されてモータを駆動することができる。   The gate terminals of the semiconductor switching elements S <b> 1 to S <b> 6 of the inverter circuit 20 are connected to the drive circuit 30, and the controller 40 is connected to the drive circuit 30. A gate signal is sent from the drive circuit 30 to the gate terminals of the semiconductor switching elements S1 to S6. The drive circuit 30 is mounted on a drive circuit board 31 as a control board. The controller 40 switches each of the semiconductor switching elements S1 to S6 via the drive circuit 30. That is, the inverter circuit 20 converts the direct current supplied from the battery into a three-phase alternating current having an appropriate frequency and supplies the converted three-phase alternating current to the winding of each phase of the motor. That is, the winding of each phase of the motor can be energized by the switching operation of the semiconductor switching elements S1 to S6 to drive the motor.

次に、車両用インバータ装置１０の構造について、図１を用いて説明する。
なお、図１および図３，４，５において、水平面を、直交するＸ，Ｙ方向で規定するとともに、上下方向をＺ方向で規定している。 Next, the structure of the vehicle inverter device 10 will be described with reference to FIG.
1 and 3, 4 and 5, the horizontal plane is defined by the orthogonal X and Y directions, and the vertical direction is defined by the Z direction.

図１に示すように、車両用インバータ装置１０は、駆動回路基板３１と、水冷式の冷却器５０と、筐体（ハウジング）６０を備えている。筐体６０は四角枠状をなし、上面および下面が開口している。四角枠状の筐体６０の内部において水冷式の冷却器５０が支持されている。水冷式の冷却器５０は水平に位置している。   As shown in FIG. 1, the vehicle inverter device 10 includes a drive circuit board 31, a water-cooled cooler 50, and a housing (housing) 60. The housing 60 has a rectangular frame shape, and the upper surface and the lower surface are open. A water-cooled cooler 50 is supported inside the rectangular frame-shaped casing 60. The water-cooled cooler 50 is positioned horizontally.

水冷式の冷却器５０は、アルミ製の下側ケース５１と、アルミ製の上側ケース（天板）５２と、アルミ製のフィン５３を備える。下側ケース５１は上面が開口する箱型をなし、下側ケース５１の上面開口部が平板状をなす上側ケース５２で塞がれている。下側ケース５１と上側ケース５２で容器構造をなし、その内部に冷却水通路が形成されている。上側ケース５２の下面には板状のフィン５３が突設されている。下側ケース５１と上側ケース５２で構成される容器構造体の一端には入口パイプＰ１が形成されているとともに他端には出口パイプＰ２が形成されている。そして、入口パイプＰ１から冷媒としての冷却水が冷却器５０の内部に導入されて出口パイプＰ２から排出されるようになっている。   The water-cooled cooler 50 includes an aluminum lower case 51, an aluminum upper case (top plate) 52, and aluminum fins 53. The lower case 51 has a box shape with an upper surface opened, and the upper surface opening of the lower case 51 is closed with a flat upper case 52. The lower case 51 and the upper case 52 form a container structure, and a cooling water passage is formed therein. A plate-like fin 53 is projected from the lower surface of the upper case 52. An inlet pipe P1 is formed at one end of a container structure constituted by the lower case 51 and the upper case 52, and an outlet pipe P2 is formed at the other end. And the cooling water as a refrigerant | coolant is introduce | transduced into the inside of the cooler 50 from the inlet pipe P1, and is discharged | emitted from the outlet pipe P2.

冷却器５０の外面としての上面には、絶縁部材としてのセラミック基板７０が配置されている。セラミック基板７０の下面には金属層７１が形成されているとともに、セラミック基板７０の上面には配線層７２，７３，７４，７５が形成されている。具体的には、例えば、セラミック基板７０はＡｌＮ基板よりなり、金属層７１はアルミ層よりなり、配線層７２，７３，７４，７５はアルミ層とその表面のＮｉめっき層よりなる。冷却器５０の上面に金属層７１がロウ付け等により接合されている。   A ceramic substrate 70 as an insulating member is disposed on the upper surface as the outer surface of the cooler 50. A metal layer 71 is formed on the lower surface of the ceramic substrate 70, and wiring layers 72, 73, 74, and 75 are formed on the upper surface of the ceramic substrate 70. Specifically, for example, the ceramic substrate 70 is made of an AlN substrate, the metal layer 71 is made of an aluminum layer, and the wiring layers 72, 73, 74, 75 are made of an aluminum layer and a Ni plating layer on the surface thereof. A metal layer 71 is joined to the upper surface of the cooler 50 by brazing or the like.

配線層７２の上面には、半導体スイッチング素子（チップ）Ｓ１および帰還ダイオード（チップ）Ｄ１が接近する位置に、はんだ付け等により接合されている。同様に、配線層７２の上面には、半導体スイッチング素子（チップ）Ｓ３および帰還ダイオード（チップ）Ｄ３が接近する位置に、はんだ付け等により接合されている。また、配線層７２の上面には、半導体スイッチング素子（チップ）Ｓ５および帰還ダイオード（チップ）Ｄ５が接近する位置に、はんだ付け等により接合されている。   On the upper surface of the wiring layer 72, the semiconductor switching element (chip) S1 and the feedback diode (chip) D1 are joined to each other by soldering or the like. Similarly, on the upper surface of the wiring layer 72, the semiconductor switching element (chip) S3 and the feedback diode (chip) D3 are joined to each other by soldering or the like. Further, on the upper surface of the wiring layer 72, the semiconductor switching element (chip) S5 and the feedback diode (chip) D5 are joined to each other by soldering or the like.

また、配線層７３の上面には、半導体スイッチング素子（チップ）Ｓ２および帰還ダイオード（チップ）Ｄ２が接近する位置に、はんだ付け等により接合されている。同様に、配線層７４の上面には、半導体スイッチング素子（チップ）Ｓ４および帰還ダイオード（チップ）Ｄ４が接近する位置に、はんだ付け等により接合されている。また、配線層７５の上面には、半導体スイッチング素子（チップ）Ｓ６および帰還ダイオード（チップ）Ｄ６が接近する位置に、はんだ付け等により接合されている。   Further, on the upper surface of the wiring layer 73, the semiconductor switching element (chip) S2 and the feedback diode (chip) D2 are joined to each other by soldering or the like. Similarly, on the upper surface of the wiring layer 74, the semiconductor switching element (chip) S4 and the feedback diode (chip) D4 are joined to each other by soldering or the like. Further, the upper surface of the wiring layer 75 is joined to a position where the semiconductor switching element (chip) S6 and the feedback diode (chip) D6 approach by soldering or the like.

これにより、冷却器５０の外面（上面）にセラミック基板７０を介して半導体スイッチング素子Ｓ１〜Ｓ６および帰還ダイオードＤ１〜Ｄ６が固定され、半導体スイッチング素子Ｓ１〜Ｓ６および帰還ダイオードＤ１〜Ｄ６は冷却器５０に熱的に結合している。   Thereby, the semiconductor switching elements S1 to S6 and the feedback diodes D1 to D6 are fixed to the outer surface (upper surface) of the cooler 50 via the ceramic substrate 70, and the semiconductor switching elements S1 to S6 and the feedback diodes D1 to D6 are fixed to the cooler 50. Thermally coupled to

半導体スイッチング素子（チップ）Ｓ１の上面と帰還ダイオード（チップ）Ｄ１の上面とがバスバー８０に、はんだ付け等により接合されている。バスバー８０の延設部８０ａが配線層７３に、はんだ付け等により接合されている。また、半導体スイッチング素子（チップ）Ｓ３の上面と帰還ダイオード（チップ）Ｄ３の上面とがバスバー８１に、はんだ付け等により接合されている。バスバー８１の延設部８１ａが配線層７４に、はんだ付け等により接合されている。さらに、半導体スイッチング素子（チップ）Ｓ５の上面と帰還ダイオード（チップ）Ｄ５の上面とがバスバー８２に、はんだ付け等により接合されている。バスバー８２の延設部８２ａが配線層７５に、はんだ付け等により接合されている。   The upper surface of the semiconductor switching element (chip) S1 and the upper surface of the feedback diode (chip) D1 are joined to the bus bar 80 by soldering or the like. The extended portion 80a of the bus bar 80 is joined to the wiring layer 73 by soldering or the like. Further, the upper surface of the semiconductor switching element (chip) S3 and the upper surface of the feedback diode (chip) D3 are joined to the bus bar 81 by soldering or the like. The extended portion 81a of the bus bar 81 is joined to the wiring layer 74 by soldering or the like. Further, the upper surface of the semiconductor switching element (chip) S5 and the upper surface of the feedback diode (chip) D5 are joined to the bus bar 82 by soldering or the like. The extended portion 82a of the bus bar 82 is joined to the wiring layer 75 by soldering or the like.

バスバー８０の延設部８０ｂが、半導体スイッチング素子Ｓ１のエミッタ端子および半導体スイッチング素子Ｓ２のコレクタ端子から延びるＵ相出力端子として真上に延設されている。バスバー８１の延設部８１ｂが、半導体スイッチング素子Ｓ３のエミッタ端子および半導体スイッチング素子Ｓ４のコレクタ端子から延びるＶ相出力端子として真上に延設されている。バスバー８２の延設部８２ｂが、半導体スイッチング素子Ｓ５のエミッタ端子および半導体スイッチング素子Ｓ６のコレクタ端子から延びるＷ相出力端子として真上に延設されている。このように、半導体スイッチング素子Ｓ１〜Ｓ６のコレクタ・エミッタ端子から延びる配線材としてのバスバー８０，８１，８２の延設部８０ｂ，８１ｂ，８２ｂが反冷却器側に延設されている。   The extending portion 80b of the bus bar 80 extends directly above as a U-phase output terminal extending from the emitter terminal of the semiconductor switching element S1 and the collector terminal of the semiconductor switching element S2. An extending portion 81b of the bus bar 81 extends directly above as a V-phase output terminal extending from the emitter terminal of the semiconductor switching element S3 and the collector terminal of the semiconductor switching element S4. An extending portion 82b of the bus bar 82 extends directly above as a W-phase output terminal extending from the emitter terminal of the semiconductor switching element S5 and the collector terminal of the semiconductor switching element S6. In this way, the extended portions 80b, 81b, 82b of the bus bars 80, 81, 82 as wiring members extending from the collector / emitter terminals of the semiconductor switching elements S1 to S6 are extended to the anti-cooler side.

半導体スイッチング素子（チップ）Ｓ２，Ｓ４，Ｓ６の上面と帰還ダイオード（チップ）Ｄ２，Ｄ４，Ｄ６の上面とがバスバー８３に、はんだ付け等により接合されている。バスバー８３の延設部８３ａが、半導体スイッチング素子Ｓ２，Ｓ４，Ｓ６のエミッタ端子から延びる負極入力端子（Ｎ端子）として真上に延設されている。配線層７２の上面にはバスバー８４が、はんだ付け等により接合されている。バスバー８４が、半導体スイッチング素子Ｓ１，Ｓ３，Ｓ５のコレクタ端子から延びる正極入力端子（Ｐ端子）として真上に延設されている。このように、半導体スイッチング素子Ｓ１〜Ｓ６のコレクタ・エミッタ端子から延びる配線材としてのバスバー８３の延設部８３ａおよびバスバー８４が反冷却器側に延設されている。   The upper surfaces of the semiconductor switching elements (chips) S2, S4, S6 and the upper surfaces of the feedback diodes (chips) D2, D4, D6 are joined to the bus bar 83 by soldering or the like. An extending portion 83a of the bus bar 83 extends directly above as a negative input terminal (N terminal) extending from the emitter terminals of the semiconductor switching elements S2, S4, S6. A bus bar 84 is joined to the upper surface of the wiring layer 72 by soldering or the like. A bus bar 84 is extended right above as a positive electrode input terminal (P terminal) extending from the collector terminals of the semiconductor switching elements S1, S3, S5. As described above, the extended portion 83a of the bus bar 83 and the bus bar 84 as the wiring members extending from the collector / emitter terminals of the semiconductor switching elements S1 to S6 are extended to the anti-cooler side.

四角枠状の筐体６０における下面開口には駆動回路基板３１が配置され、駆動回路基板３１は水平に位置している。そして、ねじを、駆動回路基板３１を貫通して筐体６０に螺入することにより駆動回路基板３１が筐体６０に固定されている。このように、駆動回路基板３１と半導体スイッチング素子（チップ）Ｓ１〜Ｓ６が冷却器５０を挟んで配置されている。なお、コントローラ４０を搭載した基板は駆動回路基板３１と多段に、即ち、駆動回路基板３１の下に重ねて配置される。   A drive circuit board 31 is disposed in the lower surface opening of the rectangular frame-shaped casing 60, and the drive circuit board 31 is positioned horizontally. Then, the drive circuit board 31 is fixed to the housing 60 by screwing the screw through the drive circuit board 31 and screwing it into the housing 60. Thus, the drive circuit board 31 and the semiconductor switching elements (chips) S1 to S6 are arranged with the cooler 50 interposed therebetween. The board on which the controller 40 is mounted is arranged in multiple stages with the drive circuit board 31, that is, overlapped under the drive circuit board 31.

また、筐体６０には複数本の信号ピン８６が埋設されているとともに複数本の信号ピン８８が埋設されている。信号ピン８６，８８はＸ方向において冷却器５０の両側に延設されている。即ち、冷却器５０における冷却水の入口と出口を結ぶ線の両側に信号ピン８６，８８がそれぞれ延設されている。   The housing 60 has a plurality of signal pins 86 embedded therein and a plurality of signal pins 88 embedded therein. The signal pins 86 and 88 extend on both sides of the cooler 50 in the X direction. That is, the signal pins 86 and 88 are extended on both sides of the line connecting the inlet and the outlet of the cooling water in the cooler 50, respectively.

複数本の信号ピン８６のうちの少なくとも１本がゲート信号ピンである。また、複数本の信号ピン８６のうちの少なくとも１本が温度センス用ピンである。信号線を構成する信号ピン８６は上下方向（Ｚ方向）に延設され、上端が筐体６０から露出している。信号ピン８６における筐体６０から露出する部位は、ボンディングワイヤ８５により半導体スイッチング素子（チップ）Ｓ１，Ｓ３，Ｓ５のゲート端子等と接続されている。信号ピン８６の下端が筐体６０から突出して駆動回路基板３１を貫通している。信号ピン８６と駆動回路基板３１とは、はんだ付け等により接続されている。   At least one of the plurality of signal pins 86 is a gate signal pin. Further, at least one of the plurality of signal pins 86 is a temperature sensing pin. A signal pin 86 constituting the signal line extends in the vertical direction (Z direction), and the upper end is exposed from the housing 60. A portion of the signal pin 86 exposed from the housing 60 is connected to the gate terminals of the semiconductor switching elements (chips) S1, S3, and S5 by a bonding wire 85. The lower end of the signal pin 86 protrudes from the housing 60 and penetrates the drive circuit board 31. The signal pin 86 and the drive circuit board 31 are connected by soldering or the like.

複数本の信号ピン８８のうちの少なくとも１本がゲート信号ピンである。また、複数本の信号ピン８８のうちの少なくとも１本が温度センス用ピンである。信号線を構成する信号ピン８８は上下方向（Ｚ方向）に延設され、上端が筐体６０から露出している。信号ピン８８における筐体６０から露出する部位は、ボンディングワイヤ８７により半導体スイッチング素子（チップ）Ｓ２，Ｓ４，Ｓ６のゲート端子等と接続されている。信号ピン８８の下端が筐体６０から突出して駆動回路基板３１を貫通している。信号ピン８８と駆動回路基板３１とは、はんだ付け等により接続されている。   At least one of the plurality of signal pins 88 is a gate signal pin. Further, at least one of the plurality of signal pins 88 is a temperature sensing pin. The signal pin 88 constituting the signal line extends in the vertical direction (Z direction), and the upper end is exposed from the housing 60. A portion of the signal pin 88 exposed from the housing 60 is connected to a gate terminal of the semiconductor switching elements (chips) S2, S4, S6 by a bonding wire 87. The lower end of the signal pin 88 protrudes from the housing 60 and penetrates the drive circuit board 31. The signal pins 88 and the drive circuit board 31 are connected by soldering or the like.

このように、半導体スイッチング素子Ｓ１，Ｓ３，Ｓ５のゲート端子から延びる配線材としてのゲート信号ピン（８６）が冷却器５０側に延設されているとともに、半導体スイッチング素子Ｓ２，Ｓ４，Ｓ６のゲート端子から延びる配線材としてのゲート信号ピン（８８）が冷却器５０側に延設されている。   As described above, the gate signal pin (86) as a wiring member extending from the gate terminals of the semiconductor switching elements S1, S3, S5 extends to the cooler 50 side, and the gates of the semiconductor switching elements S2, S4, S6. A gate signal pin (88) as a wiring material extending from the terminal is extended to the cooler 50 side.

次に、車両用インバータ装置１０の作用について説明する。
駆動回路基板３１における駆動回路３０からのゲート信号によりインバータ回路２０の半導体スイッチング素子Ｓ１〜Ｓ６がスイッチング動作する。この半導体スイッチング素子Ｓ１〜Ｓ６のスイッチング動作により、バッテリから供給される直流が適宜の周波数の３相交流に変換されてモータの各相の巻線に供給される。 Next, the operation of the vehicle inverter device 10 will be described.
The semiconductor switching elements S1 to S6 of the inverter circuit 20 perform a switching operation by a gate signal from the drive circuit 30 on the drive circuit board 31. By the switching operation of the semiconductor switching elements S1 to S6, the direct current supplied from the battery is converted into a three-phase alternating current of an appropriate frequency and supplied to the windings of each phase of the motor.

半導体スイッチング素子Ｓ１〜Ｓ６のスイッチング動作に伴い半導体スイッチング素子Ｓ１〜Ｓ６が発熱する。この熱は冷却器５０において冷却水と熱交換される。
また、半導体スイッチング素子Ｓ１〜Ｓ６のスイッチング動作に伴い電磁波（ノイズ）が発生する。ここで、駆動回路基板３１と半導体スイッチング素子Ｓ１〜Ｓ６が冷却器５０を挟んで配置されているので、半導体スイッチング素子Ｓ１〜Ｓ６から発生する電磁波（ノイズ）は駆動回路基板３１に対し金属製の冷却器５０により遮蔽される。 The semiconductor switching elements S1 to S6 generate heat with the switching operation of the semiconductor switching elements S1 to S6. This heat is exchanged with the cooling water in the cooler 50.
Further, electromagnetic waves (noise) are generated with the switching operation of the semiconductor switching elements S1 to S6. Here, since the drive circuit board 31 and the semiconductor switching elements S1 to S6 are arranged with the cooler 50 interposed therebetween, electromagnetic waves (noise) generated from the semiconductor switching elements S1 to S6 are made of metal with respect to the drive circuit board 31. It is shielded by the cooler 50.

このように、信号ピン８６，８８が下方側へ、また、バスバー８４およびバスバーの延設部８０ｂ，８１ｂ，８２ｂ，８３ａが上方側へ延びており、互いに反対方向に突出した構造となっている。具体的には、信号ピン８６，８８が冷却器５０の上面から下面へ延設され、冷却器５０の下面側に配置された駆動回路基板３１に接続されており、バスバー８４およびバスバーの延設部８０ｂ，８１ｂ，８２ｂ，８３ａを容易に配置（引き出す）ことができる。   In this manner, the signal pins 86 and 88 extend downward, and the bus bar 84 and the bus bar extending portions 80b, 81b, 82b, and 83a extend upward, and project in opposite directions. . Specifically, the signal pins 86 and 88 extend from the upper surface to the lower surface of the cooler 50 and are connected to the drive circuit board 31 disposed on the lower surface side of the cooler 50, and the bus bar 84 and the bus bar are extended. The parts 80b, 81b, 82b, 83a can be easily arranged (drawn).

図１の本実施形態と図５の比較例とを対比しつつ説明する。
比較例として図５においては、冷却器１００と筐体１０１とシールド板１０２と駆動回路基板１０３とバスバー１０４と信号ピン１０５を備える。冷却器１００の上面に素子が配置され、その上方に図示しない固定手段によりシールド板１０２が配置され、さらにその上方に駆動回路基板１０３が配置されている。また、素子に対し信号ピン１０５が上方に延設され、駆動回路基板１０３と接続されている。一方、バスバー１０４が駆動回路基板１０３の下方において駆動回路基板１０３を避けるべく水平方向に延びている。この際、バスバー１０４は上方に延設される信号ピン１０５を避けて配置する必要が生じる。そのために図５のＹ方向での幅Ｌ２が大きくなっている（体格が大きくなっている）。なお図５（ａ）において駆動回路基板１０３，シールド板１０２の図示を省略している。 The present embodiment of FIG. 1 will be described in comparison with the comparative example of FIG.
As a comparative example, FIG. 5 includes a cooler 100, a casing 101, a shield plate 102, a drive circuit board 103, a bus bar 104, and a signal pin 105. An element is arranged on the upper surface of the cooler 100, a shield plate 102 is arranged above it by fixing means (not shown), and a drive circuit board 103 is further arranged above it. A signal pin 105 extends upward from the element and is connected to the drive circuit board 103. On the other hand, the bus bar 104 extends horizontally below the drive circuit board 103 so as to avoid the drive circuit board 103. At this time, the bus bar 104 needs to be arranged avoiding the signal pins 105 extending upward. Therefore, the width L2 in the Y direction in FIG. 5 is large (the physique is large). In FIG. 5A, illustration of the drive circuit board 103 and the shield plate 102 is omitted.

これに対し、本実施形態においては、図１に示すように、信号ピン８６，８８が冷却器５０の上側から筐体６０の内部を通り、筐体６０の下側から突出して駆動回路基板３１に接合されている。よって、バスバー８０，８１，８２，８３，８４は信号ピン８６，８８との接触を考慮することなく延設（引き出す）ことができる。つまり、駆動回路基板３１が上部にないためバスバー８４およびバスバーの延設部８０ｂ，８１ｂ，８２ｂ，８３ａを上方に延ばすことができ、そのためバスバーを避けて信号ピンを配置させる必要がない。これにより、図１のＹ方向での幅Ｌ１と図５のＹ方向での幅Ｌ２との対比において、図５の幅寸法（Ｌ２）に比べ図１の幅寸法（Ｌ１）を小さくすることができる。その結果、小型化が図られる。   On the other hand, in the present embodiment, as shown in FIG. 1, the signal pins 86 and 88 pass from the upper side of the cooler 50 through the inside of the casing 60 and protrude from the lower side of the casing 60 to drive the circuit board 31. It is joined to. Therefore, the bus bars 80, 81, 82, 83, 84 can be extended (drawn) without considering contact with the signal pins 86, 88. That is, since the drive circuit board 31 is not on the upper portion, the bus bar 84 and the extended portions 80b, 81b, 82b, and 83a of the bus bar can be extended upward, so that it is not necessary to arrange the signal pins while avoiding the bus bar. Accordingly, in comparison between the width L1 in the Y direction in FIG. 1 and the width L2 in the Y direction in FIG. 5, the width dimension (L1) in FIG. 1 can be made smaller than the width dimension (L2) in FIG. it can. As a result, downsizing is achieved.

また、図１の本実施形態では、冷却器５０が半導体スイッチング素子Ｓ１〜Ｓ６と駆動回路基板３１との間に配置されることにより、電磁波の遮蔽効果が生まれるので、シールド板を配置させなくてもよい。   Moreover, in this embodiment of FIG. 1, since the cooler 50 is arrange | positioned between semiconductor switching element S1-S6 and the drive circuit board | substrate 31, since the shielding effect of electromagnetic waves arises, it is not necessary to arrange | position a shield board. Also good.

上記実施形態によれば、以下のような効果を得ることができる。
（１）車両用インバータ装置１０の構成として、半導体スイッチング素子Ｓ１〜Ｓ６と冷却器５０と駆動回路基板３１とを備える。駆動回路基板３１と半導体スイッチング素子Ｓ１〜Ｓ６が冷却器５０を挟んで配置されるとともに、信号ピン８６，８８が冷却器５０側に延設されている。よって、半導体スイッチング素子Ｓ１〜Ｓ６から発生する電磁波（ノイズ）は駆動回路基板３１に対し冷却器５０により遮蔽される。また、半導体スイッチング素子Ｓ１〜Ｓ６の制御端子から延びる信号ピン８６，８８が冷却器側に延設されるので、半導体スイッチング素子の配線材（バスバー８４およびバスバーの延設部８０ｂ，８１ｂ，８２ｂ，８３ａ）を容易に配置することができる。その結果、容易に電磁波を遮蔽することができるとともに半導体スイッチング素子の配線材の設計自由度を高くすることができる。 According to the above embodiment, the following effects can be obtained.
(1) The configuration of the vehicle inverter device 10 includes semiconductor switching elements S1 to S6, a cooler 50, and a drive circuit board 31. The drive circuit board 31 and the semiconductor switching elements S1 to S6 are arranged with the cooler 50 interposed therebetween, and signal pins 86 and 88 are extended to the cooler 50 side. Therefore, electromagnetic waves (noise) generated from the semiconductor switching elements S <b> 1 to S <b> 6 are shielded from the drive circuit board 31 by the cooler 50. Further, since the signal pins 86 and 88 extending from the control terminals of the semiconductor switching elements S1 to S6 are extended to the cooler side, the wiring material of the semiconductor switching elements (the bus bar 84 and the bus bar extending portions 80b, 81b, 82b, 83a) can be easily arranged. As a result, the electromagnetic wave can be easily shielded and the degree of freedom in designing the wiring material of the semiconductor switching element can be increased.

（２）冷却器５０における冷却水の入口と出口を結ぶ線の両側に信号ピン８６，８８がそれぞれ延設されている。これにより、片側のみに配置した場合に比べ小型化可能である。また、冷媒の入口・出口側に配線材が配置されないので、冷媒の流れや出入口形状の自由度（入口パイプＰ１，出口パイプＰ２の形状の自由度）を阻害することがない。   (2) Signal pins 86 and 88 are extended on both sides of a line connecting the inlet and the outlet of the cooling water in the cooler 50, respectively. Thereby, it is possible to reduce the size as compared with the case where it is arranged only on one side. Further, since the wiring member is not disposed on the inlet / outlet side of the refrigerant, the flow of the refrigerant and the degree of freedom of the shape of the inlet / outlet (the degree of freedom of the shape of the inlet pipe P1 and outlet pipe P2) are not hindered.

（３）半導体スイッチング素子Ｓ１〜Ｓ６の入出力端子から延びるバスバー８４およびバスバーの延設部８０ｂ，８１ｂ，８２ｂ，８３ａが反冷却器側に延設されているので、実用的である。つまり、配置の自由度が高くできるので、バスバー８４およびバスバーの延設部８０ｂ，８１ｂ，８２ｂ，８３ａを短縮することができる。   (3) Since the bus bar 84 extending from the input / output terminals of the semiconductor switching elements S1 to S6 and the extended portions 80b, 81b, 82b, 83a of the bus bar are extended to the anti-cooler side, it is practical. That is, since the degree of freedom of arrangement can be increased, the bus bar 84 and the extended portions 80b, 81b, 82b, 83a of the bus bar can be shortened.

（４）図５（ｂ）のように、駆動回路基板１０３と筐体１０１との間にバスバーを通す必要がないため、図１（ｂ）のように駆動回路基板３１と筐体６０とが接するように配置することができる。したがって駆動回路基板３１を筐体６０に固定（ねじ止め）が可能であるので、別途、駆動回路基板の固定手段を設ける必要がない。   (4) Since it is not necessary to pass a bus bar between the drive circuit board 103 and the casing 101 as shown in FIG. 5B, the drive circuit board 31 and the casing 60 are not connected as shown in FIG. It can arrange so that it may touch. Therefore, since the drive circuit board 31 can be fixed (screwed) to the housing 60, there is no need to provide a separate means for fixing the drive circuit board.

実施形態は前記に限定されるものではなく、例えば、次のように具体化してもよい。
・図３に示すように、冷却器９０に切り欠き部９１，９２を設け、切り欠き部９１，９２に信号ピン９３を通してもよい。また、切り欠き部の形状は、切り欠き部９１のように矩形でも、切り欠き部９２のように楕円形状でもよい。なお、図３は切り欠き部９１，９２の形状を示すための冷却器９０および信号ピン９３の要部のみを示す。 The embodiment is not limited to the above, and may be embodied as follows, for example.
As shown in FIG. 3, notches 91 and 92 may be provided in the cooler 90, and signal pins 93 may be passed through the notches 91 and 92. Further, the shape of the notch may be rectangular like the notch 91 or elliptical like the notch 92. FIG. 3 shows only the main parts of the cooler 90 and the signal pin 93 for showing the shapes of the notches 91 and 92.

より詳しくは、冷却器９０は、断面が凹形状をなす下側ケース９０ａの上面開口部が平板状をなす上側ケース９０ｂで塞いでおり、かつ、図３でのＸ方向における下側ケース９０ａの幅よりも上側ケース９０ｂの幅が大きくなっている。上側ケース９０ｂにおける下側ケース９０ａよりも幅広部において切り欠き部９１，９２が形成されている。   More specifically, in the cooler 90, the upper surface opening of the lower case 90a having a concave cross section is closed by the upper case 90b having a flat plate shape, and the lower case 90a in the X direction in FIG. The width of the upper case 90b is larger than the width. Cutout portions 91 and 92 are formed in the wider portion of the upper case 90b than the lower case 90a.

・図４に示すように、四角枠状をなす筐体６０における冷却器５０の下面を底板部９９で塞いだ構成とするとともに筐体６０の下面に駆動回路基板３１を固定してもよい。
・冷却器５０はアルミ製であったが、銅製等の他の金属製であってもよい。 As shown in FIG. 4, the lower surface of the cooler 50 in the casing 60 having a rectangular frame shape may be closed by the bottom plate portion 99 and the drive circuit board 31 may be fixed to the lower surface of the casing 60.
The cooler 50 is made of aluminum, but may be made of other metals such as copper.

・冷却器は全体が金属製（アルミ製）であったが、樹脂で容器を構成し、樹脂製容器における半導体スイッチング素子の下側のみにシールド用金属部を有する構成でもよい。要は、冷却器は、半導体スイッチング素子に対向する部位が少なくとも金属部となっていればよい。   -Although the whole cooler was metal (aluminum), the container may be comprised with resin and the structure which has a metal part for a shield only in the lower side of the semiconductor switching element in a resin container may be sufficient. In short, the cooler is only required that the portion facing the semiconductor switching element is at least a metal part.

・半導体スイッチング素子の入出力端子から延びる配線材としてのバスバーは横出し（水平方向に出す）ようにしてもよい。この場合も信号ピン８６，８８は冷却器５０側へ延設されるので、平面視で信号ピン８６，８８上に重ねてバスバーを配置でき、幅寸法を小さくすることができる。   The bus bar as a wiring material extending from the input / output terminal of the semiconductor switching element may be extended sideways (out in the horizontal direction). Also in this case, since the signal pins 86 and 88 are extended to the cooler 50 side, the bus bar can be arranged on the signal pins 86 and 88 in a plan view, and the width dimension can be reduced.

・冷却器の上面に配した基板（セラミック基板７０等）と半導体スイッチング素子とをポッティングしてもよい（樹脂で封止してもよい）。具体的には、図１（ｂ）において筐体６０内にポッティング材をバスバー８４の上端部およびバスバーの延設部８０ｂ，８１ｂ，８２ｂ，８３ａの上端部が露出するように注入する。   A substrate (such as the ceramic substrate 70) disposed on the upper surface of the cooler and the semiconductor switching element may be potted (sealed with resin). Specifically, in FIG. 1B, the potting material is injected into the housing 60 so that the upper end of the bus bar 84 and the upper ends of the extended portions 80b, 81b, 82b, 83a of the bus bar are exposed.

１０…車両用インバータ装置、３１…駆動回路基板、５０…冷却器、７０…セラミック基板、８０…バスバー、８０ｂ…延設部、８１…バスバー、８１ｂ…延設部、８２…バスバー、８２ｂ…延設部、８３…バスバー、８３ａ…延設部、８４…バスバー、８６…信号ピン、８８…信号ピン、Ｓ１〜Ｓ６…半導体スイッチング素子。   DESCRIPTION OF SYMBOLS 10 ... Inverter apparatus for vehicles, 31 ... Drive circuit board, 50 ... Cooler, 70 ... Ceramic substrate, 80 ... Bus bar, 80b ... Extension part, 81 ... Bus bar, 81b ... Extension part, 82 ... Bus bar, 82b ... Extension Installation part, 83 ... Bus bar, 83a ... Extension part, 84 ... Bus bar, 86 ... Signal pin, 88 ... Signal pin, S1-S6 ... Semiconductor switching element.

Claims (3)

アームを構成する半導体スイッチング素子と、
前記半導体スイッチング素子に対向する部位が少なくとも金属部となっており、外面に絶縁部材を介して前記半導体スイッチング素子が固定される冷却器と、
前記半導体スイッチング素子の制御端子と接続される制御基板と、
を備えた車両用インバータ装置であって、
前記制御基板と前記半導体スイッチング素子が前記冷却器を挟んで配置されるとともに、前記半導体スイッチング素子の制御端子から延びる配線材が前記冷却器側に延設されてなることを特徴とする車両用インバータ装置。 A semiconductor switching element constituting an arm;
The cooler in which the part facing the semiconductor switching element is at least a metal part, and the semiconductor switching element is fixed to the outer surface via an insulating member;
A control board connected to a control terminal of the semiconductor switching element;
A vehicle inverter device comprising:
The vehicle inverter, wherein the control board and the semiconductor switching element are disposed with the cooler interposed therebetween, and a wiring material extending from a control terminal of the semiconductor switching element is extended to the cooler side. apparatus. 前記冷却器における冷媒の入口と出口を結ぶ線の両側に前記配線材がそれぞれ延設されていることを特徴とする請求項１に記載の車両用インバータ装置。   2. The vehicle inverter device according to claim 1, wherein the wiring members are respectively extended on both sides of a line connecting an inlet and an outlet of the refrigerant in the cooler. 前記半導体スイッチング素子の入出力端子から延びる配線材が反冷却器側に延設されてなることを特徴とする請求項１または２に記載の車両用インバータ装置。   3. The vehicle inverter device according to claim 1, wherein a wiring member extending from an input / output terminal of the semiconductor switching element is extended to the anti-cooler side. 4.
JP2013005469A 2013-01-16 2013-01-16 Inverter device for vehicle Pending JP2014138474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013005469A JP2014138474A (en) 2013-01-16 2013-01-16 Inverter device for vehicle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013005469A JP2014138474A (en) 2013-01-16 2013-01-16 Inverter device for vehicle

Publications (1)

Publication Number Publication Date
JP2014138474A true JP2014138474A (en) 2014-07-28

Family

ID=51415708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013005469A Pending JP2014138474A (en) 2013-01-16 2013-01-16 Inverter device for vehicle

Country Status (1)

Country Link
JP (1) JP2014138474A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270743A (en) * 2001-03-13 2002-09-20 Nec Corp Mounting structure of semiconductor element
JP2003116282A (en) * 2001-10-09 2003-04-18 Hitachi Ltd Water-cooled inverter
JP2006191774A (en) * 2005-01-07 2006-07-20 Toyota Motor Corp Power control circuit and vehicle
JP2011217553A (en) * 2010-04-01 2011-10-27 Denso Corp Power converter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270743A (en) * 2001-03-13 2002-09-20 Nec Corp Mounting structure of semiconductor element
JP2003116282A (en) * 2001-10-09 2003-04-18 Hitachi Ltd Water-cooled inverter
JP2006191774A (en) * 2005-01-07 2006-07-20 Toyota Motor Corp Power control circuit and vehicle
JP2011217553A (en) * 2010-04-01 2011-10-27 Denso Corp Power converter

Similar Documents

Publication Publication Date Title
US7859103B2 (en) Semiconductor module and inverter device
US7760503B2 (en) Semiconductor module and inverter device
US11018076B2 (en) Cooling apparatus, semiconductor module, and vehicle
WO2018135104A1 (en) Semiconductor device
JP6337394B2 (en) Semiconductor device
GB2539761A (en) Power converter and railway vehicle
US9693476B2 (en) Power conversion apparatus
US20150137344A1 (en) Semiconductor device and method for manufacturing same
JPWO2016158259A1 (en) Power converter
JP7400896B2 (en) semiconductor module
CN110663110B (en) Semiconductor power module
CN111146160A (en) Semiconductor module and vehicle
EP2639953A1 (en) Power converter apparatus
US11631641B2 (en) Semiconductor device, semiconductor module, and vehicle
JP6576360B2 (en) Power converter
WO2020184053A1 (en) Semiconductor device
JP6354283B2 (en) Semiconductor module and semiconductor device
JP6498370B2 (en) Power converter
WO2019003718A1 (en) Power semiconductor device and power conversion device using same
JP2013211946A (en) Electric power conversion apparatus
US10804186B2 (en) Semiconductor module and power converter
JP6123722B2 (en) Semiconductor device
JP5459055B2 (en) Power converter and circuit board vibration suppression structure
JP2004063681A (en) Semiconductor device
JP2014138474A (en) Inverter device for vehicle

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150604

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160414

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160426

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160615

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161206

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170606