JP5092892B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP5092892B2
JP5092892B2 JP2008132267A JP2008132267A JP5092892B2 JP 5092892 B2 JP5092892 B2 JP 5092892B2 JP 2008132267 A JP2008132267 A JP 2008132267A JP 2008132267 A JP2008132267 A JP 2008132267A JP 5092892 B2 JP5092892 B2 JP 5092892B2
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wiring member
terminal
electrode wiring
portions
thickness
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JP2009283567A (en
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俊昭 長瀬
純 石川
一善 紺谷
利成 深津
宏幸 大西
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Toyota Industries Corp
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Toyota Industries Corp
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Priority to EP09154214.2A priority patent/EP2099121B1/en
Priority to US12/397,151 priority patent/US8018730B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Description

本発明は、半導体装置に係り、詳しくは板状の正極用配線部材及び板状の負極用配線部材が相互に電気的に絶縁された状態で近接して平行に配置された半導体装置に関する。   The present invention relates to a semiconductor device, and more particularly, to a semiconductor device in which a plate-like positive electrode wiring member and a plate-like negative electrode wiring member are arranged in close proximity to each other while being electrically insulated from each other.

半導体回路によって直流を交流に変換する半導体装置（パワー半導体モジュール）や、前記パワー半導体モジュールと直流平滑回路を構成するコンデンサモジュールとを備えた電力変換装置（インバータ装置）においては、配線のインダクタンスを低減することが必要である。   In a semiconductor device (power semiconductor module) that converts direct current into alternating current using a semiconductor circuit and a power conversion device (inverter device) that includes the power semiconductor module and a capacitor module that forms a direct current smoothing circuit, the inductance of the wiring is reduced. It is necessary to.

従来、板状の配線部材を有する半導体装置において、プラス側端子間を接続する板状の配線部材と、マイナス側端子間を接続する板状の配線部材とを相互に電気的に絶縁された状態で近接して平行に配置する構成が提案されている。板状の配線部材を使用するのは、大きな電流が支障無く流れるようにするためである。そして、一般に板状の配線部材を使用する場合、図７に示すように、配線部材５１，５２の本体部５１Ａ，５２Ａ及び端子部５１ａ，５２ａは同じ厚みに形成されている。   Conventionally, in a semiconductor device having a plate-like wiring member, the plate-like wiring member that connects the plus-side terminals and the plate-like wiring member that connects the minus-side terminals are electrically insulated from each other A configuration has been proposed in which they are arranged close to each other in parallel. The reason why the plate-like wiring member is used is to allow a large current to flow without trouble. And when using generally a plate-shaped wiring member, as shown in FIG. 7, the main-body parts 51A and 52A and the terminal parts 51a and 52a of the wiring members 51 and 52 are formed in the same thickness.

端子と絶縁基板上の回路とを接続するハンダ部分の信頼性を向上したパワー半導体装置として、端子を絶縁基板上の金属回路に接合する部分の厚さを、端子に主電流が通流する他の部分より薄くした構成が提案されている（特許文献１参照。）。特許文献１には図８に示すように、半導体素子６１と、絶縁基板６２上の金属箔回路６３との間を金属端子６４で接続する構成が開示されている。半導体素子６１と金属端子６４とはハンダ層６５を介して接合され、金属箔回路６３と金属端子６４とはハンダ層６６を介して接合されている。金属端子６４の半導体素子６１側の厚さｔ３を図８に示す部分の厚さｔ４より薄くしている。金属箔回路６３側の厚さも同様に薄くしてもよい旨も記載されている。
特開２００６−２５３５１６号公報 As a power semiconductor device that improves the reliability of the solder part that connects the terminal and the circuit on the insulating substrate, the thickness of the part where the terminal is joined to the metal circuit on the insulating substrate, and the main current flow through the terminal A configuration is proposed in which the thickness is thinner than this part (see Patent Document 1). Patent Document 1 discloses a configuration in which a semiconductor element 61 and a metal foil circuit 63 on an insulating substrate 62 are connected by a metal terminal 64 as shown in FIG. The semiconductor element 61 and the metal terminal 64 are bonded via a solder layer 65, and the metal foil circuit 63 and the metal terminal 64 are bonded via a solder layer 66. The thickness t3 of the metal terminal 64 on the semiconductor element 61 side is made thinner than the thickness t4 of the portion shown in FIG. It is also described that the thickness on the metal foil circuit 63 side may be similarly reduced.
JP 2006-253516 A

配線部材に電流が流れたときの温度上昇を抑制するため、配線部材に十分な電流容量（必要な電流容量）を持たせるためには板厚を厚くする必要がある。一方、端子部の曲げ加工を容易に行うためや、端子部の接合部の回路パターンへの接合を超音波接合で行うためには、端子部の板厚を薄くする必要がある。また、配線インダクタンスを低減するためには２枚の配線部材の間隔を小さく（狭く）する必要がある。そのため、配線部材の板厚を一定にした構成では、これらの要求を満たすことができない。特許文献１には、端子の接合部の厚さを他の部分の厚さより薄くすることが開示されている。しかし、特許文献１の構成は、端子の接合部にかかる応力の低減を目的としており、電流容量の確保、曲げ加工や超音波接合の容易さ、あるいは配線インダクタンスの低減等に関しては何ら記載されていない。   In order to suppress a temperature rise when a current flows through the wiring member, it is necessary to increase the plate thickness in order to provide the wiring member with a sufficient current capacity (required current capacity). On the other hand, it is necessary to reduce the thickness of the terminal portion in order to easily bend the terminal portion or to ultrasonically join the joint portion of the terminal portion to the circuit pattern. In order to reduce the wiring inductance, it is necessary to reduce (narrow) the distance between the two wiring members. Therefore, the configuration in which the thickness of the wiring member is constant cannot satisfy these requirements. Patent Document 1 discloses that the thickness of the joint portion of the terminal is made thinner than the thickness of other portions. However, the configuration of Patent Document 1 is intended to reduce the stress applied to the joint portion of the terminal, and does not describe anything about securing current capacity, easiness of bending or ultrasonic bonding, or reducing wiring inductance. Absent.

本発明は、前記従来の問題に鑑みてなされたものであって、その目的は、必要な電流容量を持つ板厚と、端子部の曲げ加工のし易さとを備え、かつ配線のインダクタンスを低減することができる配線部材を備えた半導体装置を提供することにある。   The present invention has been made in view of the above-described conventional problems, and the object thereof is to provide a plate thickness having a necessary current capacity and ease of bending a terminal portion, and to reduce wiring inductance. An object of the present invention is to provide a semiconductor device including a wiring member that can be used.

前記の目的を達成するため、請求項１に記載の発明は、板状導体で形成されるとともに複数の端子部を有する正極用配線部材及び負極用配線部材が相互に電気的に絶縁された状態で近接して平行に配置された半導体装置である。そして、前記端子部は、本体部に対してアングル状となるように屈曲形成された屈曲部を有するとともに先端側に前記本体部に対して平行に延びる接合部を有し、かつ厚みが前記本体部の厚みより薄く形成されている。ここで、「アングル状」とは、屈曲部を挟む２つの板部が直角状に配置される状態を意味する。   In order to achieve the above object, the invention according to claim 1 is a state in which a positive electrode wiring member and a negative electrode wiring member which are formed of a plate-like conductor and have a plurality of terminal portions are electrically insulated from each other. The semiconductor devices are arranged close to each other in parallel. The terminal portion has a bent portion formed so as to be angled with respect to the main body portion, and has a joint portion extending in parallel to the main body portion on the distal end side, and the thickness is the main body. It is formed thinner than the thickness of the part. Here, the “angle shape” means a state in which two plate portions sandwiching the bent portion are arranged at right angles.

板状導体製の正極用配線部材及び負極用配線部材が使用されるのは、要求される電流を正極用配線部材及び負極用配線部材に支障なく流すことができるように両配線部材に十分な電流容量を持たせるためである。しかし、配線部材の本体部及び端子部を同じ厚さに形成した場合は、必要な電流容量を確保するために板厚を厚くすると、端子部の曲げ加工が難しくなる。この発明では、端子部は、本体部に対してアングル状となるように屈曲形成された屈曲部を有するとともに先端側に本体部に対して平行に延びる接合部を有し、かつ厚みが本体部の厚みより薄く形成されている。したがって、本体部の厚みを、必要な電流容量を確保するために十分な厚みにしても、端子部の曲げ加工を容易に行うことができる。   The positive electrode wiring member and the negative electrode wiring member made of a plate-like conductor are used so that the required current can be passed through the positive electrode wiring member and the negative electrode wiring member without trouble. This is to provide current capacity. However, when the main body portion and the terminal portion of the wiring member are formed to have the same thickness, it is difficult to bend the terminal portion if the plate thickness is increased in order to ensure the necessary current capacity. In this invention, the terminal portion has a bent portion that is bent so as to form an angle with respect to the main body portion, and has a joint portion that extends parallel to the main body portion on the distal end side, and has a thickness of the main body portion. It is formed thinner than the thickness. Therefore, the terminal portion can be easily bent even if the thickness of the main body portion is sufficient to ensure the necessary current capacity.

また、請求項１に記載の発明は、前記正極用配線部材及び前記負極用配線部材は、段差のない面が対向するように配置されている。この発明では、正極用配線部材及び負極用配線部材は、端子部の部分においても相互に絶縁された状態で近接して平行に配置することが可能になり、正極用配線部材及び負極用配線部材を段差のない面と段差のある面とが対向するように配置する場合に比べて配線インダクタンスを低減することができる。 In the invention described in claim 1, the positive electrode wiring member and the negative electrode wiring member are arranged such that surfaces having no step are opposed to each other. In the present invention, the positive electrode wiring member and the negative electrode wiring member can be arranged close to each other in parallel while being insulated from each other even in the terminal portion, and the positive electrode wiring member and the negative electrode wiring member The wiring inductance can be reduced as compared with the case where the surface having no step and the surface having the step are arranged to face each other.

請求項２に記載の発明は、請求項１に記載の発明において、前記屈曲部は、板厚の薄い部分に形成されている。屈曲部は板厚の厚い部分と板厚の薄い部分との境界部に形成することもできる。しかし、この発明では、屈曲部は板厚の薄い部分に形成されるため、境界部に形成するのに比べて曲げ加工が容易になる。また、屈曲部は板厚の薄い部分に形成されるため屈曲部の曲率半径を小さくすることができ、端子部が本体部の幅方向に突出する長さを短くできるため、省スペース化を図ることができる。 According to a second aspect of the present invention, in the first aspect of the present invention, the bent portion is formed in a thin portion. The bent part can also be formed at the boundary between the thick part and the thin part. However, in the present invention, since the bent portion is formed in a portion having a small plate thickness, the bending process is facilitated as compared with the case where the bent portion is formed in the boundary portion. Further, since the bent portion is formed in a thin plate portion, the radius of curvature of the bent portion can be reduced, and the length of the terminal portion protruding in the width direction of the main body portion can be shortened, thereby saving space. be able to.

請求項３に記載の発明は、請求項１又は請求項２に記載の発明において、前記接合部は、回路パターンに超音波接合で接合されている。半導体装置によっては、配線部材の接合部を回路パターンに接合する際に周囲に存在する他の部品に悪影響を与えないために、接合時における発熱量を少なくしたい場合がある。この発明では、超音波接合で接合部の接合を行うことにより、半田付けで接合部の接合を行うより発熱量を少なくすることができる。 According to a third aspect of the invention, in the invention of the first or second aspect , the joining portion is joined to the circuit pattern by ultrasonic joining. Depending on the semiconductor device, there is a case where it is desired to reduce the amount of heat generated at the time of bonding in order not to adversely affect other components existing in the periphery when the bonding portion of the wiring member is bonded to the circuit pattern. In the present invention, the amount of heat generated can be reduced by joining the joining portion by ultrasonic joining, compared to joining the joining portion by soldering.

本発明によれば、必要な電流容量を持つ板厚と、端子部の曲げ加工のし易さとを備え、かつ配線のインダクタンスを低減することができる配線部材を備えた半導体装置を提供することができる。   According to the present invention, it is possible to provide a semiconductor device including a wiring member that has a plate thickness having a necessary current capacity and is easy to bend a terminal portion and that can reduce wiring inductance. it can.

以下、本発明を３相用のインバータ装置に具体化した一実施形態を図１〜図５にしたがって説明する。
先ずインバータ装置の回路構成を説明する。図１（ａ）に示すように、インバータ装置１１は、６個の半導体チップとしてのスイッチング素子Ｑ１〜Ｑ６を有するインバータ回路１２を備えている。各スイッチング素子Ｑ１〜Ｑ６には、ＭＯＳＦＥＴ（metal oxide semiconductor 電界効果トランジスタ）が使用されている。インバータ回路１２は、第１及び第２のスイッチング素子Ｑ１，Ｑ２、第３及び第４のスイッチング素子Ｑ３，Ｑ４、第５及び第６のスイッチング素子Ｑ５，Ｑ６がそれぞれ直列に接続されている。各スイッチング素子Ｑ１〜Ｑ６のドレインとソース間には、ダイオードＤ１〜Ｄ６が、逆並列に接続されている。第１、第３及び第５のスイッチング素子Ｑ１，Ｑ３，Ｑ５及び各第１、第３及び第５のスイッチング素子Ｑ１，Ｑ３，Ｑ５に接続されたダイオードＤ１，Ｄ３，Ｄ５の組はそれぞれ上アームと呼ばれる。また、第２、第４及び第６のスイッチング素子Ｑ２，Ｑ４，Ｑ６及び第２、第４及び第６のスイッチング素子Ｑ２，Ｑ４，Ｑ６に接続されたダイオードＤ２，Ｄ４，Ｄ６の組はそれぞれ下アームと呼ばれる。 Hereinafter, an embodiment in which the present invention is embodied in a three-phase inverter device will be described with reference to FIGS.
First, the circuit configuration of the inverter device will be described. As shown in FIG. 1A, the inverter device 11 includes an inverter circuit 12 having switching elements Q1 to Q6 as six semiconductor chips. MOSFETs (metal oxide semiconductor field effect transistors) are used for the switching elements Q1 to Q6. In the inverter circuit 12, first and second switching elements Q1 and Q2, third and fourth switching elements Q3 and Q4, and fifth and sixth switching elements Q5 and Q6 are connected in series, respectively. Diodes D1 to D6 are connected in antiparallel between the drains and sources of the switching elements Q1 to Q6. The first, third and fifth switching elements Q1, Q3 and Q5 and the diodes D1, D3 and D5 connected to the first, third and fifth switching elements Q1, Q3 and Q5 are respectively upper arms. Called. The second, fourth and sixth switching elements Q2, Q4 and Q6 and the diodes D2, D4 and D6 connected to the second, fourth and sixth switching elements Q2, Q4 and Q6 are respectively lower pairs. Called the arm.

第１、第３及び第５のスイッチング素子Ｑ１，Ｑ３，Ｑ５のドレインが、配線１３を介して電源入力用のプラス入力端子１４に接続され、第２、第４及び第６のスイッチング素子Ｑ２，Ｑ４，Ｑ６が、配線１５を介して電源入力用のマイナス入力端子１６に接続されている。配線１３及び配線１５間にはコンデンサ１７が複数並列に接続されている。この実施形態ではコンデンサ１７として電解コンデンサが使用され、コンデンサ１７の正極（プラス）端子が配線１３に接続され、コンデンサ１７の負極（マイナス）端子が配線１５に接続されている。   The drains of the first, third and fifth switching elements Q1, Q3 and Q5 are connected to the positive input terminal 14 for power supply input via the wiring 13, and the second, fourth and sixth switching elements Q2, Q4 and Q6 are connected to a negative input terminal 16 for power supply input via a wiring 15. A plurality of capacitors 17 are connected in parallel between the wiring 13 and the wiring 15. In this embodiment, an electrolytic capacitor is used as the capacitor 17, the positive electrode (plus) terminal of the capacitor 17 is connected to the wiring 13, and the negative electrode (minus) terminal of the capacitor 17 is connected to the wiring 15.

スイッチング素子Ｑ１，Ｑ２の間の接合点はＵ相端子Ｕに、スイッチング素子Ｑ３，Ｑ４の間の接合点はＶ相端子Ｖに、スイッチング素子Ｑ５，Ｑ６の間の接合点はＷ相端子Ｗに、それぞれ接続されている。各スイッチング素子Ｑ１〜Ｑ６のゲートは駆動信号入力端子Ｇ１〜Ｇ６に接続されている。各スイッチング素子Ｑ１〜Ｑ６のソースは信号端子Ｓ１〜Ｓ６に接続されている。図１（ａ）では各上アーム及び各下アームがそれぞれ、１個のスイッチング素子及び１個のダイオードで示されているが、各アームは、図１（ｂ）に示すように、スイッチング素子ＱとダイオードＤの組が複数並列に接続された構成になっている。この実施形態では各アームはそれぞれ４組のスイッチング素子Ｑ及びダイオードＤで構成されている。   The junction between switching elements Q1 and Q2 is at U-phase terminal U, the junction between switching elements Q3 and Q4 is at V-phase terminal V, and the junction between switching elements Q5 and Q6 is at W-phase terminal W. , Each connected. The gates of the switching elements Q1 to Q6 are connected to the drive signal input terminals G1 to G6. The sources of the switching elements Q1 to Q6 are connected to the signal terminals S1 to S6. In FIG. 1 (a), each upper arm and each lower arm are shown as one switching element and one diode, but each arm has a switching element Q as shown in FIG. 1 (b). And a plurality of pairs of diodes D are connected in parallel. In this embodiment, each arm is composed of four sets of switching elements Q and diodes D.

次にインバータ装置１１の構造を説明する。
図２〜図４に示すように、インバータ装置１１は、銅製の金属ベース２０と、絶縁基板としてのセラミック基板２１とで構成された基板２２上に半導体チップ２３が実装されている。半導体チップ２３は、１個のスイッチング素子（ＭＯＳＦＥＴ）及び１個のダイオードが一つのデバイスとして組み込まれている。即ち、半導体チップ２３は、図１（ｂ）に示される一つのスイッチング素子Ｑ及び一つのダイオードＤを備えたデバイスとなる。 Next, the structure of the inverter device 11 will be described.
As shown in FIGS. 2 to 4, in the inverter device 11, a semiconductor chip 23 is mounted on a substrate 22 composed of a copper metal base 20 and a ceramic substrate 21 as an insulating substrate. In the semiconductor chip 23, one switching element (MOSFET) and one diode are incorporated as one device. That is, the semiconductor chip 23 is a device including one switching element Q and one diode D shown in FIG.

セラミック基板２１は、表面に回路パターン２４ａ，２４ｂ，２４ｃ，２４ｄを有し、裏面にセラミック基板２１と金属ベース２０とを接合する接合層として機能する金属板２５（図４に図示）を有するセラミック板２６で構成されている。セラミック板２６は、例えば、窒化アルミニウム、アルミナ、窒化ケイ素等により形成され、回路パターン２４ａ，２４ｂ，２４ｃ，２４ｄ及び金属板２５は、例えば、アルミニウムや銅等で形成されている。セラミック基板２１は、金属板２５を介して半田（図示せず）で金属ベース２０に接合されている。以下、この明細書では、金属ベース２０をインバータ装置１１の底部（下部）として説明する。   The ceramic substrate 21 has circuit patterns 24a, 24b, 24c, and 24d on the front surface, and a ceramic having a metal plate 25 (shown in FIG. 4) that functions as a bonding layer for bonding the ceramic substrate 21 and the metal base 20 to the back surface. It consists of a plate 26. The ceramic plate 26 is made of, for example, aluminum nitride, alumina, silicon nitride, or the like, and the circuit patterns 24a, 24b, 24c, 24d and the metal plate 25 are made of, for example, aluminum or copper. The ceramic substrate 21 is joined to the metal base 20 with solder (not shown) through the metal plate 25. Hereinafter, in this specification, the metal base 20 is described as the bottom (lower part) of the inverter device 11.

回路パターン２４ａはゲート信号用の回路パターン、回路パターン２４ｂはドレイン用の回路パターン、回路パターン２４ｃはソース用の回路パターン、回路パターン２４ｄはソース信号用の回路パターンである。各回路パターン２４ａ，２４ｂ，２４ｃ，２４ｄは帯状に形成されている。半導体チップ２３は、ドレイン用の回路パターン２４ｂ上に半田で接合されている。図５に示すように、半導体チップ２３は、ゲートとゲート信号用の回路パターン２４ａとの間、ソースとソース用の回路パターン２４ｃとの間及びソースとソース信号用の回路パターン２４ｄとの間をワイヤボンディングにより電気的に接続されている。   The circuit pattern 24a is a circuit pattern for a gate signal, the circuit pattern 24b is a circuit pattern for a drain, the circuit pattern 24c is a circuit pattern for a source, and the circuit pattern 24d is a circuit pattern for a source signal. Each circuit pattern 24a, 24b, 24c, 24d is formed in a strip shape. The semiconductor chip 23 is joined to the drain circuit pattern 24b by solder. As shown in FIG. 5, the semiconductor chip 23 is connected between the gate and the gate signal circuit pattern 24a, between the source and the source circuit pattern 24c, and between the source and the source signal circuit pattern 24d. It is electrically connected by wire bonding.

金属ベース２０はほぼ矩形状に形成され、セラミック基板２１も矩形状に形成されている。セラミック基板２１は１２個設けられ、長手方向が金属ベース２０の長手方向と直交する状態で各列６個となるように２列、６行に配置されている。そして、各行の２個のセラミック基板２１上に配置された半導体チップ２３がインバータ回路１２の各アームを構成する。この実施形態では、半導体チップ２３は、各セラミック基板２１上に２個ずつ実装されており、４個の半導体チップ２３がそれぞれ１つのアームを構成する。   The metal base 20 is formed in a substantially rectangular shape, and the ceramic substrate 21 is also formed in a rectangular shape. Twelve ceramic substrates 21 are provided and arranged in two columns and six rows so that the longitudinal direction is six in each column in a state perpendicular to the longitudinal direction of the metal base 20. The semiconductor chips 23 arranged on the two ceramic substrates 21 in each row constitute each arm of the inverter circuit 12. In this embodiment, two semiconductor chips 23 are mounted on each ceramic substrate 21, and each of the four semiconductor chips 23 constitutes one arm.

基板２２の上方には配線部材として板状導体で形成された正極用配線部材２７及び負極用配線部材２８が、基板２２と平行に、かつ相互に絶縁された状態で近接して重なるように配置されている。正極用配線部材２７及び負極用配線部材２８の間には、両者の電気的絶縁性を確保するための絶縁部材２９（図４（ｂ）に図示）が配置されている。この実施形態では、正極用配線部材２７の上方に負極用配線部材２８が配置されている。負極用配線部材２８上には、複数（この実施形態では４個）のコンデンサ１７が図示しない正極端子及び負極端子が下向きになる状態で配置されている。正極用配線部材２７は図１（ａ）における配線１３を、負極用配線部材２８は図１（ａ）における配線１５をそれぞれ構成する。   Above the substrate 22, a positive electrode wiring member 27 and a negative electrode wiring member 28, which are formed of plate conductors as wiring members, are arranged in parallel and in close proximity to each other while being insulated from each other. Has been. Between the positive electrode wiring member 27 and the negative electrode wiring member 28, an insulating member 29 (shown in FIG. 4B) is disposed to ensure electrical insulation between them. In this embodiment, a negative electrode wiring member 28 is disposed above the positive electrode wiring member 27. On the negative electrode wiring member 28, a plurality of (four in this embodiment) capacitors 17 are arranged with a positive electrode terminal and a negative electrode terminal (not shown) facing downward. The positive wiring member 27 constitutes the wiring 13 in FIG. 1A, and the negative wiring member 28 constitutes the wiring 15 in FIG. 1A.

正極用配線部材２７及び負極用配線部材２８は、それぞれ本体部２７Ａ，２８Ａの幅方向の両端部に端子部２７ａ，２８ａが複数（この実施形態では３対６個）形成されている。端子部２７ａ，２８ａは、本体部２７Ａ，２８Ａに対して基板２２側に向かってアングル状となるように屈曲形成された屈曲部２７ｃ，２８ｃを有し、先端側に本体部２７Ａ，２８Ａに対して平行に延びる接合部２７ｂ，２８ｂを有し、かつ厚みが本体部２７Ａ，２８Ａの厚みより薄く形成されている。即ち、端子部２７ａ，２８ａは、本体部２７Ａ，２８Ａに対してアングル状となるように屈曲形成された屈曲部２７ｃ，２８ｃを有し、端子部２７ａ，２８ａに形成された屈曲部２７ｃ，２８ｃ等は、板厚の薄い部分に形成されている。本体部２７Ａ，２８Ａは、必要な電流容量を持つ板厚、例えば１ｍｍに形成され、端子部２７ａ，２８ａは、曲げ加工のし易さ及び接合部２７ｂ，２８ｂの超音波接合し易さを確保できる板厚、例えば０．５ｍｍに形成されている。   The positive electrode wiring member 27 and the negative electrode wiring member 28 are each formed with a plurality of terminal portions 27a, 28a (3 to 6 in this embodiment) at both ends in the width direction of the main body portions 27A, 28A. The terminal portions 27a and 28a have bent portions 27c and 28c formed so as to be angled toward the substrate 22 side with respect to the main body portions 27A and 28A, and on the distal end side with respect to the main body portions 27A and 28A. The joint portions 27b and 28b extend in parallel with each other, and the thickness is smaller than the thickness of the main body portions 27A and 28A. That is, the terminal portions 27a and 28a have bent portions 27c and 28c formed to be angled with respect to the main body portions 27A and 28A, and the bent portions 27c and 28c formed on the terminal portions 27a and 28a. Etc. are formed in a thin part. The main body portions 27A and 28A are formed to have a plate thickness having a necessary current capacity, for example, 1 mm, and the terminal portions 27a and 28a ensure the ease of bending and the ease of ultrasonic bonding of the joint portions 27b and 28b. The plate thickness can be made, for example, 0.5 mm.

正極用配線部材２７及び負極用配線部材２８は、段差のない面が対向するように配置されている。正極用配線部材２７は、端子部２７ａの接合部２７ｂを介して、上アームを構成するセラミック基板２１上のドレイン用の回路パターン２４ｂの中央部に超音波接合されている。負極用配線部材２８は、端子部２８ａの接合部２８ｂ介して、下アームを構成するセラミック基板２１上のソース用の回路パターン２４ｃの中央部に超音波接合されている。   The positive electrode wiring member 27 and the negative electrode wiring member 28 are arranged such that surfaces having no step are opposed to each other. The positive electrode wiring member 27 is ultrasonically bonded to the central portion of the circuit pattern 24b for drain on the ceramic substrate 21 constituting the upper arm via the bonding portion 27b of the terminal portion 27a. The negative electrode wiring member 28 is ultrasonically bonded to the center portion of the circuit pattern 24c for the source on the ceramic substrate 21 constituting the lower arm through the bonding portion 28b of the terminal portion 28a.

なお、正極用配線部材２７及び負極用配線部材２８には、幅方向の端部両側に、各端子部２７ａ，２８ａの一部と連続するとともに互いに重なる状態で配置される垂下部２７ｄ，２８ｄが形成されている。また、正極用配線部材２７及び負極用配線部材２８は、材料金属を帯状の段階でプレス加工により、肉厚部と肉薄部とを有する状態に形成したものを使用して、プレス加工により端子部２７ａ，２８ａを曲げ加工する。   The positive wiring member 27 and the negative wiring member 28 have drooping portions 27d and 28d arranged on both sides of the end portion in the width direction so as to be continuous with a part of the terminal portions 27a and 28a and overlapping each other. Is formed. Further, the positive electrode wiring member 27 and the negative electrode wiring member 28 are formed by pressing a material metal in a belt-like stage so as to have a thick part and a thin part. 27a and 28a are bent.

図２及び図３に示すように、金属ベース２０には、その周縁に沿うように電気的絶縁性の支持枠３０が、全てのセラミック基板２１を枠内に収容する状態に固定されている。正極用配線部材２７の長手方向の一端部には、外部電源入力用のプラス入力端子１４が、一部が支持枠３０の外側に位置するように配置されている。負極用配線部材２８には、その長手方向の正極用配線部材２７のプラス入力端子１４が形成された側と反対側の端部に、外部電源入力用のマイナス入力端子１６が形成され、一部が支持枠３０の外側に位置するように配置されている。   As shown in FIGS. 2 and 3, an electrically insulating support frame 30 is fixed to the metal base 20 so as to accommodate all the ceramic substrates 21 in the frame along the peripheral edge thereof. At one end in the longitudinal direction of the positive electrode wiring member 27, the positive input terminal 14 for inputting an external power source is arranged so that a part thereof is located outside the support frame 30. The negative wiring member 28 is formed with a negative input terminal 16 for external power input at the end of the positive wiring member 27 in the longitudinal direction opposite to the side where the positive input terminal 14 is formed. Is disposed outside the support frame 30.

図２及び図３に示すように、インバータ装置１１の３つの出力電極部材３２Ｕ，３２Ｖ，３２Ｗは、側面ほぼＬ字状に形成されるとともに、上方に向かって延びる部分が支持枠３０の近くに位置し、横方向に延びる部分が正極用配線部材２７の下方においてその長手方向と直交する状態で配置されている。そして、各出力電極部材３２Ｕ，３２Ｖ，３２Ｗは、２個の接合部３５が水平に延びる部分の先端両側で、２個の接合部３５が屈曲部寄りでそれぞれ下側に突出するように形成されている。正極用配線部材２７と出力電極部材３２Ｕ，３２Ｖ，３２Ｗとは、シリコーンゲル３６（図４（ａ）に図示）で絶縁が確保されている。出力電極部材３２Ｕは、第１のスイッチング素子Ｑ１及びダイオードＤ１で構成される上アームのソース用の回路パターン２４ｃと、第２のスイッチング素子Ｑ２及びダイオードＤ２で構成される下アームのドレイン用の回路パターン２４ｂとに超音波接合されている。出力電極部材３２Ｖは、第３のスイッチング素子Ｑ３及びダイオードＤ３で構成される上アームのソース用の回路パターン２４ｃと、第４のスイッチング素子Ｑ４及びダイオードＤ４で構成される下アームのドレイン用の回路パターン２４ｂとに超音波接合されている。出力電極部材３２Ｗは、第５のスイッチング素子Ｑ５及びダイオードＤ５で構成される上アームのソース用の回路パターン２４ｃと、第６のスイッチング素子Ｑ６及びダイオードＤ６で構成される下アームのドレイン用の回路パターン２４ｂとに超音波接合されている。   As shown in FIGS. 2 and 3, the three output electrode members 32U, 32V, and 32W of the inverter device 11 are formed in a substantially L-shaped side surface, and a portion extending upward is close to the support frame 30. The part which is located and extends in the lateral direction is arranged below the positive electrode wiring member 27 in a state orthogonal to the longitudinal direction. The output electrode members 32U, 32V, and 32W are formed so that the two joint portions 35 protrude toward the lower side near the bent portions on both sides of the tip of the portion where the two joint portions 35 extend horizontally. ing. The positive electrode wiring member 27 and the output electrode members 32U, 32V, 32W are insulated by a silicone gel 36 (shown in FIG. 4A). The output electrode member 32U includes a circuit pattern 24c for the source of the upper arm constituted by the first switching element Q1 and the diode D1, and a circuit for the drain of the lower arm constituted by the second switching element Q2 and the diode D2. It is ultrasonically bonded to the pattern 24b. The output electrode member 32V includes an upper arm source circuit pattern 24c composed of the third switching element Q3 and the diode D3, and a lower arm drain circuit composed of the fourth switching element Q4 and the diode D4. It is ultrasonically bonded to the pattern 24b. The output electrode member 32W includes an upper arm source circuit pattern 24c composed of a fifth switching element Q5 and a diode D5, and a lower arm drain circuit composed of a sixth switching element Q6 and a diode D6. It is ultrasonically bonded to the pattern 24b.

各アームに対応するそれぞれ２個のセラミック基板２１のうち、出力電極部材３２Ｕ，３２Ｖ，３２Ｗの先端側と対応するセラミック基板２１のゲート信号用の回路パターン２４ａには、駆動信号入力端子Ｇ１〜Ｇ６の第１端部が、ソース信号用の回路パターン２４ｄには信号端子Ｓ１〜Ｓ６の第１端部が、それぞれ接合されている。各端子Ｇ１〜Ｇ６，Ｓ１〜Ｓ６は、第２端部が支持枠３０から突出するように、支持枠３０を貫通する状態で支持枠３０に一体成形されている。なお、各アームを構成する２個のセラミック基板２１上に形成された回路パターン２４ａ同士及び回路パターン２４ｄ同士は、図５に示すように、それぞれワイヤボンディングで電気的に接続されている。   Of the two ceramic substrates 21 corresponding to each arm, the circuit pattern 24a for the gate signal of the ceramic substrate 21 corresponding to the distal end side of the output electrode members 32U, 32V, 32W has drive signal input terminals G1 to G6. The first ends of the signal terminals S1 to S6 are joined to the circuit pattern 24d for the source signal, respectively. Each of the terminals G1 to G6 and S1 to S6 is integrally formed with the support frame 30 so as to penetrate the support frame 30 so that the second end portion protrudes from the support frame 30. The circuit patterns 24a and the circuit patterns 24d formed on the two ceramic substrates 21 constituting each arm are electrically connected by wire bonding as shown in FIG.

支持枠３０内には半導体チップ２３の絶縁性確保や保護のためにシリコーンゲル３６が充填、硬化されている。そして、金属ベース２０上には、基板２２の半導体チップ２３、即ちスイッチング素子Ｑ１〜Ｑ６が実装された側の面、正極用配線部材２７、負極用配線部材２８、コンデンサ１７、出力電極部材３２Ｕ，３２Ｖ，３２Ｗ及び支持枠３０を囲繞するカバー３７がボルトにより固定されるようになっている。   The support frame 30 is filled and cured with a silicone gel 36 for securing and protecting the insulation of the semiconductor chip 23. On the metal base 20, the semiconductor chip 23 of the substrate 22, that is, the surface on which the switching elements Q1 to Q6 are mounted, the positive electrode wiring member 27, the negative electrode wiring member 28, the capacitor 17, the output electrode member 32U, The cover 37 surrounding the 32V and 32W and the support frame 30 is fixed by bolts.

次に前記のように構成されたインバータ装置１１の作用を説明する。
インバータ装置１１は、例えば、車両の電源装置の一部を構成するものとして使用される。インバータ装置１１は、プラス入力端子１４及びマイナス入力端子１６が直流電源（図示せず）に接続され、Ｕ相端子Ｕ、Ｖ相端子Ｖ及びＷ相端子Ｗがモータ（図示せず）に接続され、駆動信号入力端子Ｇ１〜Ｇ６及び信号端子Ｓ１〜Ｓ６が制御装置（図示せず）に接続された状態で使用される。 Next, the operation of the inverter device 11 configured as described above will be described.
The inverter device 11 is used, for example, as a part of a vehicle power supply device. The inverter device 11 has a positive input terminal 14 and a negative input terminal 16 connected to a DC power source (not shown), and a U-phase terminal U, a V-phase terminal V, and a W-phase terminal W connected to a motor (not shown). The drive signal input terminals G1 to G6 and the signal terminals S1 to S6 are used in a state of being connected to a control device (not shown).

上アームの第１、第３及び第５のスイッチング素子Ｑ１，Ｑ３，Ｑ５及び下アームの第２、第４及び第６のスイッチング素子Ｑ２，Ｑ４，Ｑ６がそれぞれ所定周期でオン、オフ制御されることによりモータに交流が供給されてモータが駆動される。   The first, third, and fifth switching elements Q1, Q3, and Q5 of the upper arm and the second, fourth, and sixth switching elements Q2, Q4, and Q6 of the lower arm are turned on and off at predetermined intervals, respectively. As a result, alternating current is supplied to the motor to drive the motor.

正極用配線部材２７及び負極用配線部材２８には、スイッチング素子Ｑ１〜Ｑ６のスイッチング時に急峻に立ち上がる電流又は立ち下がる電流が流れ、その電流は正極用配線部材２７及び負極用配線部材２８で逆方向となる。正極用配線部材２７及び負極用配線部材２８は平行な平板状に形成され、互いに近接して配置されているため、相互インダクタンスの効果により配線インダクタンスが低減する。また、垂下部２７ｄ，２８ｄも平行に近接して配置されているため、垂下部２７ｄ，２８ｄが存在しない場合に比較して、配線インダクタンスがより低減する。   The positive wiring member 27 and the negative wiring member 28 are supplied with a current that suddenly rises or falls during switching of the switching elements Q1 to Q6. The current flows in the reverse direction in the positive wiring member 27 and the negative wiring member 28. It becomes. Since the positive electrode wiring member 27 and the negative electrode wiring member 28 are formed in parallel flat plate shapes and are arranged close to each other, the wiring inductance is reduced by the effect of mutual inductance. Further, since the hanging portions 27d and 28d are also arranged close to each other in parallel, the wiring inductance is further reduced as compared with the case where the hanging portions 27d and 28d do not exist.

本体部２７Ａ，２８Ａにはそれぞれ各端子部２７ａに流れる電流の合計電流が流れる。板状導体製の正極用配線部材２７及び負極用配線部材２８は、要求される電流を支障なく流すことができる板厚に形成されているため、負荷の要求に応じて電流が支障なく供給される。配線部材の本体部２７Ａ，２８Ａ及び端子部２７ａ，２８ａを同じ厚さに形成した場合は、必要な電流容量を確保するために板厚を厚くすると、端子部２７ａ，２８ａの曲げ加工が難しくなる。しかし、端子部２７ａ，２８ａは、曲げ加工を容易に行うことが可能な厚みに形成されているため、端子部２７ａ，２８ａの曲げ加工を容易に行うことができる。端子部２７ａ，２８ａに流れる電流は、本体部２７Ａ，２８Ａに流れる電流の一部であるため、端子部２７ａ，２８ａの厚みを端子部２７ａ，２８ａの曲げ加工を容易に行うことができる厚みや、接合部２７ｂ，２８ｂを超音波接合するのに適した厚みに設定しても、各半導体チップ２３に必要な大きさの電流が支障なく供給される。   A total current flowing through each terminal portion 27a flows through the main body portions 27A and 28A. Since the positive electrode wiring member 27 and the negative electrode wiring member 28 made of a plate-like conductor are formed to have a plate thickness that allows a required current to flow without hindrance, the current is supplied without hindrance according to the demand of the load. The When the main body portions 27A and 28A and the terminal portions 27a and 28a of the wiring member are formed to have the same thickness, it is difficult to bend the terminal portions 27a and 28a if the plate thickness is increased in order to secure a necessary current capacity. . However, since the terminal portions 27a and 28a are formed to a thickness that can be easily bent, the terminal portions 27a and 28a can be easily bent. Since the current that flows through the terminal portions 27a and 28a is a part of the current that flows through the main body portions 27A and 28A, the thickness of the terminal portions 27a and 28a can be made thick enough to bend the terminal portions 27a and 28a. Even if the joining portions 27b and 28b are set to a thickness suitable for ultrasonic joining, a current of a necessary magnitude is supplied to each semiconductor chip 23 without any trouble.

この実施形態によれば、以下に示す効果を得ることができる。
（１）半導体装置は、板状導体で形成されるとともに複数の端子部２７ａ，２８ａを有する正極用配線部材２７及び負極用配線部材２８が相互に電気的に絶縁された状態で近接して平行に配置されている。したがって、配線のインダクタンスを低減することができる。 According to this embodiment, the following effects can be obtained.
(1) The semiconductor device is formed of a plate-like conductor and has a plurality of terminal portions 27a and 28a, and the positive electrode wiring member 27 and the negative electrode wiring member 28 are close to each other and electrically parallel to each other. Is arranged. Therefore, the wiring inductance can be reduced.

（２）端子部２７ａ，２８ａは、本体部２７Ａ，２８Ａに対してアングル状となるように屈曲形成された屈曲部２７ｃ，２８ｃを有するとともに先端側に本体部２７Ａ，２８Ａに対して平行に延びる接合部２７ｂ，２８ｂを有し、かつ厚みが本体部２７Ａ，２８Ａの厚みより薄く形成されている。したがって、本体部２７Ａ，２８Ａの厚みを、必要な電流容量を確保するために十分な厚みにしても、端子部２７ａ，２８ａの曲げ加工を容易に行うことができる。   (2) The terminal portions 27a, 28a have bent portions 27c, 28c formed to be angled with respect to the main body portions 27A, 28A and extend parallel to the main body portions 27A, 28A on the distal end side. The joint portions 27b and 28b are provided, and the thickness is smaller than the thickness of the main body portions 27A and 28A. Therefore, the terminal portions 27a and 28a can be easily bent even if the main body portions 27A and 28A have a sufficient thickness to ensure a necessary current capacity.

（３）正極用配線部材２７及び負極用配線部材２８は、段差のない面が対向するように配置されている。したがって、正極用配線部材２７及び負極用配線部材２８は、本体部２７Ａ，２８Ａ以外の部分においても相互に絶縁された状態で近接して平行に配置することが可能になり、正極用配線部材２７及び負極用配線部材２８を段差のない面と段差のある面とが対向するように配置する場合に比べて配線インダクタンスを低減することができる。   (3) The positive electrode wiring member 27 and the negative electrode wiring member 28 are arranged such that surfaces having no step are opposed to each other. Therefore, the positive electrode wiring member 27 and the negative electrode wiring member 28 can be arranged in close proximity and in parallel with each other at portions other than the main body portions 27A and 28A. In addition, the wiring inductance can be reduced as compared with the case where the negative electrode wiring member 28 is arranged so that the surface having no step faces the surface having the step.

（４）屈曲部２７ｃ，２８ｃは、板厚の厚い部分と板厚の薄い部分との境界部に形成することもできる。しかし、この実施形態では、屈曲部２７ｃ，２８ｃは板厚の薄い部分に形成されるため、境界部に形成するのに比べて曲げ加工が容易になる。また、屈曲部２７ｃ，２８ｃは板厚の薄い部分に形成されるため屈曲部２７ｃ，２８ｃの曲率半径を小さくすることができ、端子部２７ａ，２８ａが本体部２７Ａ，２８Ａの幅方向に突出する長さを短くできるため、省スペース化を図ることができる。   (4) The bent portions 27c and 28c can be formed at a boundary portion between a thick plate portion and a thin plate portion. However, in this embodiment, since the bent portions 27c and 28c are formed in a portion having a small plate thickness, the bending process is facilitated as compared with the case where the bent portions 27c and 28c are formed in the boundary portion. In addition, since the bent portions 27c and 28c are formed in thin portions, the radius of curvature of the bent portions 27c and 28c can be reduced, and the terminal portions 27a and 28a protrude in the width direction of the main body portions 27A and 28A. Since the length can be shortened, space can be saved.

（５）接合部２７ｂ，２８ｂは、回路パターン２４ｂ，２４ｃに超音波接合で接合されている。したがって、半田付けで接合部２７ｂ，２８ｂの接合を行うより発熱量を少なくすることができる。   (5) The joining portions 27b and 28b are joined to the circuit patterns 24b and 24c by ultrasonic joining. Therefore, the amount of heat generation can be reduced as compared with the case where the joining portions 27b and 28b are joined by soldering.

（６）負極用配線部材２８上に電気的絶縁状態を保って配置されたコンデンサ１７と、接合部２７ｂ，２８ｂとの距離が近いが、接合時における発熱量が半田付けに比べて少ない超音波接合で行われるため、耐熱性の高い特殊なコンデンサを使用する必要がない。   (6) Although the distance between the capacitor 17 disposed on the negative electrode wiring member 28 while maintaining electrical insulation and the joint portions 27b and 28b is short, the amount of heat generated at the time of joining is less than that of soldering. Since it is performed by joining, it is not necessary to use a special capacitor with high heat resistance.

（７）半導体装置はインバータ装置１１であり、正極用配線部材２７はインバータ装置１１を構成するスイッチング素子に電力を供給するコンデンサ１７の正極端子に電気的に接続され、負極用配線部材２８は、インバータ装置１１を構成するスイッチング素子に電力を供給するコンデンサ１７の負極端子に電気的に接続されている。したがって、大電力が使用されるインバータ装置１１において、スイッチング素子のスイッチング動作時における配線インダクタンスを低減することができる。   (7) The semiconductor device is the inverter device 11, the positive electrode wiring member 27 is electrically connected to the positive terminal of the capacitor 17 that supplies power to the switching elements constituting the inverter device 11, and the negative electrode wiring member 28 is It is electrically connected to the negative terminal of a capacitor 17 that supplies power to the switching elements constituting the inverter device 11. Therefore, in the inverter device 11 that uses high power, the wiring inductance during the switching operation of the switching element can be reduced.

実施形態は前記に限定されるものではなく、例えば、次のように具体化してもよい。
○ 図６に示すように、正極用配線部材２７及び負極用配線部材２８は、段差のない面と段差のある面とが対向するように配置してもよい。正極用配線部材２７及び負極用配線部材２８を段差のない面同士が対向するように配置する構成では、端子部２７ａ，２８ａの屈曲部２７ｃ，２８ｃの曲げ方向を異なるように加工する必要があるため、曲げ加工に使用する金型が２種類必要になり、加工に手間がかかりコストも高くなる。これに対して、段差のない面と段差のある面とが対向するように配置する構成では、端子部２７ａ，２８ａの屈曲部２７ｃ，２８ｃの曲げ方向が正極用配線部材２７及び負極用配線部材２８で同じに形成されるため、屈曲部２７ｃ，２８ｃの曲げ方向を異なるように加工する場合に比べて加工が容易になる。 The embodiment is not limited to the above, and may be embodied as follows, for example.
As shown in FIG. 6, the positive electrode wiring member 27 and the negative electrode wiring member 28 may be arranged so that a surface without a step and a surface with a step are opposed to each other. In the configuration in which the positive electrode wiring member 27 and the negative electrode wiring member 28 are arranged so that the surfaces without steps are opposed to each other, it is necessary to process the bending portions 27c and 28c of the terminal portions 27a and 28a so that the bending directions thereof are different. For this reason, two types of molds used for bending are required, which takes time and increases the cost. On the other hand, in the configuration in which the surface having no step and the surface having the step are arranged to face each other, the bending directions of the bent portions 27c and 28c of the terminal portions 27a and 28a are the positive wiring member 27 and the negative wiring member. Therefore, the processing is easier than in the case where the bending portions 27c and 28c are processed in different bending directions.

○ 接合部２７ｂ，２８ｂの回路パターン２４ｂ，２４ｃへの接合は、超音波接合に限らず、例えば、半田付けによる接合やレーザ溶接による接合あってもよい。
○ 半導体チップ２３はＭＯＳＦＥＴに限らず、他のパワートランジスタ（例えば、ＩＧＢＴ（絶縁ゲートバイポーラ型トランジスタ））やサイリスタを使用してもよい。 The bonding of the bonding portions 27b and 28b to the circuit patterns 24b and 24c is not limited to ultrasonic bonding, and may be bonding by soldering or laser welding, for example.
The semiconductor chip 23 is not limited to a MOSFET, and other power transistors (for example, IGBT (insulated gate bipolar transistor)) or thyristors may be used.

○ 各アームを構成するスイッチング素子Ｑ及びダイオードＤの組は４組に限らず、各アームを流れる電流量の大きさによって３組以下でも５組以上でもよい。また、複数組に限らず、１組のスイッチング素子Ｑ及びダイオードＤの組で構成されてもよい。   The group of switching elements Q and diodes D constituting each arm is not limited to four, and may be three or less or five or more depending on the amount of current flowing through each arm. Moreover, it is not limited to a plurality of sets, and may be configured by a set of a switching element Q and a diode D.

○ 各アームを２個のセラミック基板２１で構成する代わりに、１個のセラミック基板２１で構成したり、あるいは１個のセラミック基板２１上に複数のアームを構成したりするようにしてもよい。この場合、ゲート信号用の回路パターン２４ａ間及びソース信号用の回路パターン２４ｄ間をそれぞれ電気的に接続するワイヤボンディングが不要になる。   Instead of configuring each arm with two ceramic substrates 21, each arm may be configured with one ceramic substrate 21, or a plurality of arms may be configured on one ceramic substrate 21. In this case, wire bonding for electrically connecting the gate signal circuit patterns 24a and the source signal circuit patterns 24d is not required.

○ セラミック基板２１に代えて、絶縁基板として金属基板の表面に絶縁層を形成し、絶縁層上に回路パターン２４ａ，２４ｂ，２４ｃ，２４ｄを形成した構成の物を使用してもよい。   O Instead of the ceramic substrate 21, an insulating substrate may be used in which an insulating layer is formed on the surface of a metal substrate, and circuit patterns 24a, 24b, 24c, and 24d are formed on the insulating layer.

○ コンデンサ１７の数は４個に限らず、インバータ装置１１の定格電流値及び使用するコンデンサの容量により決まり、３個以下でも５個以上でもよい。
○ インバータ装置１１は、３相交流を出力する構成に限らず、単相交流を出力する構成としてもよい。単相交流を出力する構成では上アーム及び下アームの組が２組存在する。 The number of capacitors 17 is not limited to four, and is determined by the rated current value of the inverter device 11 and the capacity of the capacitors used, and may be three or less or five or more.
(Circle) the inverter apparatus 11 is good also as a structure which outputs not only the structure which outputs 3 phase alternating current but single phase alternating current. In the configuration that outputs a single-phase alternating current, there are two sets of upper and lower arms.

○ 半導体装置は、インバータ装置１１に限らず、例えば、ＤＣ−ＤＣコンバータに適用してもよい。
○ 半導体装置は、板状導体で形成されるとともに複数の端子部を有する正極用配線部材及び負極用配線部材が相互に電気的に絶縁された状態で近接して平行に配置された構成を備えた物であれば適用することができ、コンデンサ１７のない半導体装置であってもよい。 The semiconductor device is not limited to the inverter device 11 and may be applied to, for example, a DC-DC converter.
The semiconductor device has a configuration in which a positive electrode wiring member and a negative electrode wiring member which are formed of a plate-like conductor and have a plurality of terminal portions are arranged close to each other in parallel while being electrically insulated from each other. Any semiconductor device without the capacitor 17 may be used.

以下の技術的思想（発明）は前記実施形態から把握できる。
（１）前記半導体装置はインバータ装置であり、前記正極用配線部材は前記インバータ装置を構成するスイッチング素子に電力を供給するコンデンサの正極端子に電気的に接続され、前記負極用配線部材は、前記インバータ装置を構成するスイッチング素子に電力を供給するコンデンサの負極端子に電気的に接続されている。 The following technical idea (invention) can be understood from the embodiment.
(1) pre-Symbol semiconductor device is an inverter device, the positive interconnection member is electrically connected to the positive terminal of the capacitor for supplying electric power to the switching elements constituting the inverter apparatus, the negative interconnection member, It is electrically connected to the negative terminal of a capacitor that supplies power to the switching elements that constitute the inverter device.

（ａ）はインバータの回路図、（ｂ）は一つのアームの回路図。(A) is a circuit diagram of an inverter, (b) is a circuit diagram of one arm. インバータ装置のカバーを省略した平面図。The top view which abbreviate | omitted the cover of the inverter apparatus. コンデンサアッシー、金属ベース、支持枠及び出力電極部材の関係を示す模式分解斜視図。The model disassembled perspective view which shows the relationship between a capacitor | condenser assembly, a metal base, a support frame, and an output electrode member. （ａ）は図２のＡ−Ａ線断面図、（ｂ）は（ａ）の一部省略部分拡大図。(A) is the sectional view on the AA line of FIG. 2, (b) is a partially omitted partial enlarged view of (a). 半導体チップのソース及びゲートと各回路パターンとのワイヤボンディングの状態を示す部分模式図。The partial schematic diagram which shows the state of the wire bonding of the source and gate of a semiconductor chip, and each circuit pattern. 別の実施形態の両配線部材の関係を示す部分模式図。The partial schematic diagram which shows the relationship between the both wiring members of another embodiment. 従来技術の模式図。The schematic diagram of a prior art. 別の従来技術の模式図。The schematic diagram of another prior art.

符号の説明Explanation of symbols

１１…半導体装置としてのインバータ装置、２４ｂ，２４ｃ…回路パターン、２７…正極用配線部材、２７Ａ，２８Ａ…本体部、２７ａ，２８ａ…端子部、２７ｂ，２８ｂ…接合部、２７ｃ，２８ｃ…屈曲部、２８…負極用配線部材。   DESCRIPTION OF SYMBOLS 11 ... Inverter apparatus as a semiconductor device, 24b, 24c ... Circuit pattern, 27 ... Positive electrode wiring member, 27A, 28A ... Main part, 27a, 28a ... Terminal part, 27b, 28b ... Joint part, 27c, 28c ... Bending part 28 ... Wiring member for negative electrode.

Claims (3)

板状導体で形成されるとともに複数の端子部を有する正極用配線部材及び負極用配線部材が相互に電気的に絶縁された状態で近接して平行に配置された半導体装置であって、前記端子部は、本体部に対してアングル状となるように屈曲形成された屈曲部を有するとともに先端側に前記本体部に対して平行に延びる接合部を有し、かつ厚みが前記本体部の厚みより薄く形成されており、
前記正極用配線部材及び前記負極用配線部材は、段差のない面が対向するように配置されていることを特徴とする半導体装置。 A positive electrode wiring member and a negative electrode wiring member formed of a plate-like conductor and having a plurality of terminal portions are arranged in close proximity and in parallel with each other being electrically insulated from each other, wherein the terminal The portion has a bent portion formed so as to be angled with respect to the main body portion, and has a joint portion extending in parallel to the main body portion on the distal end side, and the thickness is larger than the thickness of the main body portion. Thinly formed ,
The semiconductor device according to claim 1, wherein the positive electrode wiring member and the negative electrode wiring member are arranged so that surfaces having no step are opposed to each other . 前記屈曲部は、板厚の薄い部分に形成されている請求項１に記載の半導体装置。 The semiconductor device according to claim 1 , wherein the bent portion is formed in a portion having a small plate thickness. 前記接合部は、回路パターンに超音波接合で接合されている請求項１又は請求項２に記載の半導体装置。 The semiconductor device according to claim 1 , wherein the bonding portion is bonded to the circuit pattern by ultrasonic bonding.
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