JP5989388B2 - パッケージ及びパッケージの製造方法 - Google Patents
パッケージ及びパッケージの製造方法 Download PDFInfo
- Publication number
- JP5989388B2 JP5989388B2 JP2012095488A JP2012095488A JP5989388B2 JP 5989388 B2 JP5989388 B2 JP 5989388B2 JP 2012095488 A JP2012095488 A JP 2012095488A JP 2012095488 A JP2012095488 A JP 2012095488A JP 5989388 B2 JP5989388 B2 JP 5989388B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- package
- housing
- light emitting
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8585—Means for heat extraction or cooling being an interconnection
Landscapes
- Led Device Packages (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012095488A JP5989388B2 (ja) | 2012-04-19 | 2012-04-19 | パッケージ及びパッケージの製造方法 |
| EP13163043.6A EP2654093B1 (en) | 2012-04-19 | 2013-04-10 | Package and method for manufacturing package |
| CN201310131498.0A CN103378268B (zh) | 2012-04-19 | 2013-04-16 | 封装件和封装件的制造方法 |
| US13/864,402 US8890295B2 (en) | 2012-04-19 | 2013-04-17 | Package for mounting a light emitting element including a flat plate-shaped electrode and method for manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012095488A JP5989388B2 (ja) | 2012-04-19 | 2012-04-19 | パッケージ及びパッケージの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013222931A JP2013222931A (ja) | 2013-10-28 |
| JP2013222931A5 JP2013222931A5 (enExample) | 2015-04-02 |
| JP5989388B2 true JP5989388B2 (ja) | 2016-09-07 |
Family
ID=48326072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012095488A Expired - Fee Related JP5989388B2 (ja) | 2012-04-19 | 2012-04-19 | パッケージ及びパッケージの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8890295B2 (enExample) |
| EP (1) | EP2654093B1 (enExample) |
| JP (1) | JP5989388B2 (enExample) |
| CN (1) | CN103378268B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10170674B2 (en) * | 2013-06-28 | 2019-01-01 | Citizen Watch Co., Ltd. | LED device |
| JP6002858B2 (ja) * | 2013-12-03 | 2016-10-05 | 日本カーバイド工業株式会社 | 発光素子搭載用基板、及び、それを用いた発光装置 |
| USD778848S1 (en) * | 2015-04-07 | 2017-02-14 | Cree, Inc. | Solid state light emitter component |
| JP6168096B2 (ja) | 2015-04-28 | 2017-07-26 | 日亜化学工業株式会社 | 発光装置、パッケージ及びそれらの製造方法 |
| JP6628031B2 (ja) * | 2015-11-04 | 2020-01-08 | ローム株式会社 | 電子部品 |
| DE102016106270A1 (de) * | 2016-04-06 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Herstellung eines halbleiterbauelements |
| JP1566953S (enExample) * | 2016-04-28 | 2017-01-16 | ||
| TWI647867B (zh) * | 2016-08-31 | 2019-01-11 | 大陸商開發晶照明(廈門)有限公司 | Led金屬基板和led模組 |
| US10378736B2 (en) * | 2016-11-03 | 2019-08-13 | Foshan Nationstar Optoelectronics Co., Ltd. | LED bracket, LED bracket array, LED device and LED display screen |
| CN108269899B (zh) * | 2016-12-30 | 2020-06-05 | 光宝光电(常州)有限公司 | 发光二极管封装结构及其制造方法 |
| WO2019059703A2 (ko) * | 2017-09-22 | 2019-03-28 | 엘지이노텍 주식회사 | 발광소자 패키지 및 조명 모듈 |
| JP6809442B2 (ja) * | 2017-11-27 | 2021-01-06 | Tdk株式会社 | センサシステム、センサモジュールおよびセンサシステムの実装方法 |
| JP7231809B2 (ja) * | 2018-06-05 | 2023-03-02 | 日亜化学工業株式会社 | 発光装置 |
| USD865688S1 (en) * | 2018-07-03 | 2019-11-05 | Lumens Co., Ltd. | LED package |
| WO2024235649A1 (en) * | 2023-05-17 | 2024-11-21 | Ams-Osram International Gmbh | Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4066608B2 (ja) | 2001-03-16 | 2008-03-26 | 日亜化学工業株式会社 | パッケージ成形体及びその製造方法 |
| JP3912607B2 (ja) * | 2002-06-19 | 2007-05-09 | サンケン電気株式会社 | 半導体発光装置の製法 |
| JP2005197329A (ja) | 2004-01-05 | 2005-07-21 | Stanley Electric Co Ltd | 表面実装型半導体装置及びそのリードフレーム構造 |
| US20050199899A1 (en) * | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
| WO2006016398A1 (ja) * | 2004-08-10 | 2006-02-16 | Renesas Technology Corp. | 発光装置および発光装置の製造方法 |
| JP2006222271A (ja) * | 2005-02-10 | 2006-08-24 | Ngk Spark Plug Co Ltd | 発光素子実装用基板 |
| KR100735310B1 (ko) * | 2006-04-21 | 2007-07-04 | 삼성전기주식회사 | 다층 반사 면 구조를 갖는 엘이디 패키지 및 그 제조방법 |
| TWI314366B (en) * | 2006-04-28 | 2009-09-01 | Delta Electronics Inc | Light emitting apparatus |
| US7485480B2 (en) * | 2006-09-21 | 2009-02-03 | Harvatek Corporation | Method of manufacturing high power light-emitting device package and structure thereof |
| US20080089072A1 (en) * | 2006-10-11 | 2008-04-17 | Alti-Electronics Co., Ltd. | High Power Light Emitting Diode Package |
| US8058667B2 (en) * | 2009-03-10 | 2011-11-15 | Nepes Led Corporation | Leadframe package for light emitting diode device |
| JPWO2010119830A1 (ja) * | 2009-04-13 | 2012-10-22 | パナソニック株式会社 | 発光ダイオード |
| DE102010025319B4 (de) * | 2010-06-28 | 2022-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente |
| US8253330B2 (en) * | 2010-11-30 | 2012-08-28 | GEM Weltronics TWN Corporation | Airtight multi-layer array type LED |
-
2012
- 2012-04-19 JP JP2012095488A patent/JP5989388B2/ja not_active Expired - Fee Related
-
2013
- 2013-04-10 EP EP13163043.6A patent/EP2654093B1/en not_active Not-in-force
- 2013-04-16 CN CN201310131498.0A patent/CN103378268B/zh not_active Expired - Fee Related
- 2013-04-17 US US13/864,402 patent/US8890295B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN103378268A (zh) | 2013-10-30 |
| CN103378268B (zh) | 2017-10-03 |
| EP2654093B1 (en) | 2018-11-28 |
| EP2654093A2 (en) | 2013-10-23 |
| JP2013222931A (ja) | 2013-10-28 |
| US20130277701A1 (en) | 2013-10-24 |
| EP2654093A3 (en) | 2015-11-18 |
| US8890295B2 (en) | 2014-11-18 |
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Legal Events
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