JP5968931B2 - 電子デバイス又は他の部品上のコーティングに使用するハイブリッド層 - Google Patents
電子デバイス又は他の部品上のコーティングに使用するハイブリッド層 Download PDFInfo
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- JP5968931B2 JP5968931B2 JP2014036437A JP2014036437A JP5968931B2 JP 5968931 B2 JP5968931 B2 JP 5968931B2 JP 2014036437 A JP2014036437 A JP 2014036437A JP 2014036437 A JP2014036437 A JP 2014036437A JP 5968931 B2 JP5968931 B2 JP 5968931B2
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- hybrid layer
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- silicon
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- 238000000576 coating method Methods 0.000 title claims description 31
- 239000011248 coating agent Substances 0.000 title claims description 28
- 239000000463 material Substances 0.000 claims description 156
- 238000000034 method Methods 0.000 claims description 83
- 239000002243 precursor Substances 0.000 claims description 77
- 238000000151 deposition Methods 0.000 claims description 64
- 229920000642 polymer Polymers 0.000 claims description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 230000008021 deposition Effects 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 13
- -1 dimethylsiloxane Chemical class 0.000 claims description 12
- 239000012495 reaction gas Substances 0.000 claims description 12
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000009736 wetting Methods 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 230000002776 aggregation Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 6
- 238000010397 one-hybrid screening Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005054 agglomeration Methods 0.000 claims description 3
- 238000004220 aggregation Methods 0.000 claims description 3
- 238000002329 infrared spectrum Methods 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 3
- 229910010272 inorganic material Inorganic materials 0.000 claims 2
- 239000011147 inorganic material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 17
- 239000010408 film Substances 0.000 description 17
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- 230000007613 environmental effect Effects 0.000 description 14
- 229920001721 polyimide Polymers 0.000 description 13
- 238000001878 scanning electron micrograph Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000000356 contaminant Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 8
- 230000035699 permeability Effects 0.000 description 8
- 239000011541 reaction mixture Substances 0.000 description 8
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- 230000008859 change Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 239000011888 foil Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
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- 239000011253 protective coating Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052729 chemical element Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- PUNGSQUVTIDKNU-UHFFFAOYSA-N 2,4,6,8,10-pentamethyl-1,3,5,7,9,2$l^{3},4$l^{3},6$l^{3},8$l^{3},10$l^{3}-pentaoxapentasilecane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O[Si](C)O1 PUNGSQUVTIDKNU-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
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- 230000007423 decrease Effects 0.000 description 2
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
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- WGGNJZRNHUJNEM-UHFFFAOYSA-N 2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 WGGNJZRNHUJNEM-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- VFHJWQUCFQTIAR-UHFFFAOYSA-N 2-methylideneoxatrisiletane Chemical compound C=[Si]1O[SiH2][SiH2]1 VFHJWQUCFQTIAR-UHFFFAOYSA-N 0.000 description 1
- OPLQHQZLCUPOIX-UHFFFAOYSA-N 2-methylsilirane Chemical compound CC1C[SiH2]1 OPLQHQZLCUPOIX-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- AVBDXTVULLVYCT-UHFFFAOYSA-N N-[[acetyl(butyl)amino]-prop-1-enylsilyl]-N-butylacetamide Chemical compound CCCCN(C(C)=O)[SiH](C=CC)N(C(C)=O)CCCC AVBDXTVULLVYCT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- OIKHZBFJHONJJB-UHFFFAOYSA-N dimethyl(phenyl)silicon Chemical compound C[Si](C)C1=CC=CC=C1 OIKHZBFJHONJJB-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- OKHRRIGNGQFVEE-UHFFFAOYSA-N methyl(diphenyl)silicon Chemical compound C=1C=CC=CC=1[Si](C)C1=CC=CC=C1 OKHRRIGNGQFVEE-UHFFFAOYSA-N 0.000 description 1
- OFLMWACNYIOTNX-UHFFFAOYSA-N methyl(methylsilyloxy)silane Chemical compound C[SiH2]O[SiH2]C OFLMWACNYIOTNX-UHFFFAOYSA-N 0.000 description 1
- FWITZJRQRZACHD-UHFFFAOYSA-N methyl-[2-[methyl(silyloxy)silyl]propan-2-yl]-silyloxysilane Chemical compound C[SiH](O[SiH3])C(C)(C)[SiH](C)O[SiH3] FWITZJRQRZACHD-UHFFFAOYSA-N 0.000 description 1
- ANKWZKDLZJQPKN-UHFFFAOYSA-N methyl-[[methyl(silyloxy)silyl]methyl]-silyloxysilane Chemical compound [SiH3]O[SiH](C)C[SiH](C)O[SiH3] ANKWZKDLZJQPKN-UHFFFAOYSA-N 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- KSVMTHKYDGMXFJ-UHFFFAOYSA-N n,n'-bis(trimethylsilyl)methanediimine Chemical compound C[Si](C)(C)N=C=N[Si](C)(C)C KSVMTHKYDGMXFJ-UHFFFAOYSA-N 0.000 description 1
- MYADPEFFMQPOQC-UHFFFAOYSA-N n-[[acetyl(ethyl)amino]-dimethylsilyl]-n-ethylacetamide Chemical compound CCN(C(C)=O)[Si](C)(C)N(CC)C(C)=O MYADPEFFMQPOQC-UHFFFAOYSA-N 0.000 description 1
- XJSOFJATDVCLHI-UHFFFAOYSA-N n-[[acetyl(methyl)amino]-dimethylsilyl]-n-methylacetamide Chemical compound CC(=O)N(C)[Si](C)(C)N(C)C(C)=O XJSOFJATDVCLHI-UHFFFAOYSA-N 0.000 description 1
- WWOJHRGOXHGXEX-UHFFFAOYSA-N n-[[acetyl(methyl)amino]-ethenyl-methylsilyl]-n-methylacetamide Chemical compound CC(=O)N(C)[Si](C)(C=C)N(C)C(C)=O WWOJHRGOXHGXEX-UHFFFAOYSA-N 0.000 description 1
- WOFLNHIWMZYCJH-UHFFFAOYSA-N n-[bis(diethylaminooxy)-methylsilyl]oxy-n-ethylethanamine Chemical compound CCN(CC)O[Si](C)(ON(CC)CC)ON(CC)CC WOFLNHIWMZYCJH-UHFFFAOYSA-N 0.000 description 1
- NASKMVWXSAHSLX-UHFFFAOYSA-N n-[bis(n-acetylanilino)-methylsilyl]-n-phenylacetamide Chemical compound C=1C=CC=CC=1N(C(C)=O)[Si](C)(N(C(C)=O)C=1C=CC=CC=1)N(C(=O)C)C1=CC=CC=C1 NASKMVWXSAHSLX-UHFFFAOYSA-N 0.000 description 1
- GEEYEXCEWMASIB-UHFFFAOYSA-N n-[bis[acetyl(ethyl)amino]-ethenylsilyl]-n-ethylacetamide Chemical compound CCN(C(C)=O)[Si](C=C)(N(CC)C(C)=O)N(CC)C(C)=O GEEYEXCEWMASIB-UHFFFAOYSA-N 0.000 description 1
- DXCDKJNAUJTZGP-UHFFFAOYSA-N n-[diethylaminooxy(diphenyl)silyl]oxy-n-ethylethanamine Chemical compound C=1C=CC=CC=1[Si](ON(CC)CC)(ON(CC)CC)C1=CC=CC=C1 DXCDKJNAUJTZGP-UHFFFAOYSA-N 0.000 description 1
- WKWOFMSUGVVZIV-UHFFFAOYSA-N n-bis(ethenyl)silyl-n-trimethylsilylmethanamine Chemical compound C[Si](C)(C)N(C)[SiH](C=C)C=C WKWOFMSUGVVZIV-UHFFFAOYSA-N 0.000 description 1
- XGTQMIMKLICSCM-UHFFFAOYSA-N n-methyl-n-tris[acetyl(methyl)amino]silylacetamide Chemical compound CC(=O)N(C)[Si](N(C)C(C)=O)(N(C)C(C)=O)N(C)C(C)=O XGTQMIMKLICSCM-UHFFFAOYSA-N 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920003257 polycarbosilane Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XOAJIYVOSJHEQB-UHFFFAOYSA-N trimethyl trimethoxysilyl silicate Chemical compound CO[Si](OC)(OC)O[Si](OC)(OC)OC XOAJIYVOSJHEQB-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 238000010396 two-hybrid screening Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Photovoltaic Devices (AREA)
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Description
下においてクラックが現われない十分な柔軟性を有する。
20 反応チャンバ
22 電極
24 ホルダー
26 電極スタンドオフ
30 電子デバイス
40 前駆体物質源
42 反応混合物
50 N2ガスタンク
60 反応ガスタンク
70 真空ポンプ
80 質量流量制御装置
82 遮断弁
84 逆止め弁
100、160、180 OLED
110 バリアコーティング
140 OLED本体
150 基板
162、164、174、182、192 ハイブリッド層
170 平坦化副層
172 接着−促進副層
184 エンドキャップ
194 ポリイミド膜
196 トレンチ
Claims (43)
- 前駆体物質の原料を使用する段階、
コーティングされる表面に近接する反応位置に前記前駆体物質を運ぶ段階、及び
前記前駆体物質の原料を使用する化学気相成長法によって、前記表面上にハイブリッド層を堆積する段階を備え、
前記ハイブリッド層が、主にポリマーシリコン及び無機シリコンの混合物から成り、
前記ポリマーシリコンと無機シリコンとの重量比が、95:5から5:95の範囲であり、
前記ポリマーシリコン及び無機シリコンが、前記前駆体物質の同一の原料から形成され、
前記堆積する段階において一定の反応条件下で、少なくとも0.1μmの厚さの前記ハイブリッド層が堆積され、
少なくとも0.1μmの厚さの前記ハイブリッド層を介した水蒸気透過速度が、1日あたり10−6g/m2未満であることを特徴とする表面上にコーティングを形成する方法。 - 前記前駆体物質が、ヘキサメチルジシロキサン又はジメチルシロキサンであることを特徴とする請求項1に記載の方法。
- 前記前駆体物質が、単一有機−シリコン化合物を含むことを特徴とする請求項1に記載の方法。
- 前記前駆体物質が、有機−シリコン化合物の混合物を含むことを特徴とする請求項1に記載の方法。
- 前記化学気相成長法が、プラズマ助長型であることを特徴とする請求項1に記載の方法。
- 反応ガスを提供する段階をさらに含み、
前記化学気相成長法が、前記反応ガスの存在下で行われることを特徴とする請求項5に記載の方法。 - 前記反応ガスが、酸素であることを特徴とする請求項6に記載の方法。
- 前記ポリマーシリコンと無機シリコンとの重量比が、90:10から10:90の範囲であることを特徴とする請求項1に記載の方法。
- 前記ポリマーシリコンと無機シリコンとの重量比が、25:75から10:90の範囲であることを特徴とする請求項1に記載の方法。
- 前記堆積する段階において一定の反応条件下で、少なくとも1,600Åの厚さの前記ハイブリッド層が堆積されることを特徴とする請求項1に記載の方法。
- 前記堆積する段階において一定の反応条件下で、1,600Åから60,000Åの厚さの前記ハイブリッド層が堆積されることを特徴とする請求項1に記載の方法。
- 前記前駆体物質が、ヘキサメチルジシロキサン又はジメチルシロキサンであり、
前記化学気相成長法が、プラズマ助長型であることを特徴とする請求項1に記載の方法。 - 前記ハイブリッド層を堆積する段階の前に、前記前駆体物質の原料を使用する前記表面上に非混合ポリマーシリコン層を堆積する段階をさらに含むことを特徴とする請求項1に記載の方法。
- 前記ハイブリッド層を堆積する段階の前に、前記前駆体物質の原料を使用する前記表面上に非混合無機シリコン層を堆積する段階をさらに含むことを特徴とする請求項1に記載の方法。
- 前記ハイブリッド層を堆積する段階の後に、前記前駆体物質の原料を使用する前記表面上に非混合ポリマーシリコン層を堆積する段階をさらに含むことを特徴とする請求項1に記載の方法。
- 前記ハイブリッド層を堆積する段階の後に、前記前駆体物質の原料を使用する前記表面上に非混合無機シリコン層を堆積する段階をさらに含むことを特徴とする請求項1に記載の方法。
- 堆積された前記ハイブリッド層が、36°から60°の範囲の水滴のぬれ接触角を有することを特徴とする請求項1に記載の方法。
- 前記ハイブリッド層が、光透過性であることを特徴とする請求項1に記載の方法。
- 前記ハイブリッド層が、近紫外線から近赤外線スペクトルにおいて、90%以上の透過率を有することを特徴とする請求項18に記載の方法。
- 前記表面と前記ハイブリッド層との間の界面凝集を改善するように、前記ハイブリッド層を堆積する段階の前に、前記表面が前処理されることを特徴とする請求項1に記載の方法。
- 前記表面を前処理する段階が、化学的処理を含むことを特徴とする請求項20に記載の方法。
- 前記表面を前処理する段階が、物理的−化学的処理を含むことを特徴とする請求項20に記載の方法。
- 前記物理的−化学的処理が、プラズマ処理であることを特徴とする請求項22に記載の方法。
- 前記ハイブリッド層を堆積する段階の前に、前記前処理する段階が、前記表面上に仲介層を堆積する段階を含むことを特徴とする請求項20に記載の方法。
- 前記仲介層が、前記表面と前記ハイブリッド層との間の界面凝集を増加させるように機能する材料を含むことを特徴とする請求項24に記載の方法。
- 一定の反応条件下で堆積された前記ハイブリッド層の厚さが、0.1から10μmの範囲であることを特徴とする請求項1に記載の方法。
- 前記前駆体物質の原料を使用する化学気相成長法によって、前記表面上に複数のハイブリッド層を堆積する段階をさらに備え、
前記各ハイブリッド層が、独立して、主にポリマーシリコン及び無機シリコンの混合物から成り、
前記ポリマーシリコンと無機シリコンとの重量比が、95:5から5:95の範囲であり、
前記ポリマーシリコン及び無機シリコンが、前記前駆体物質の同一の原料から形成され、
前記複数のハイブリッド層の各ハイブリッド層において、前記堆積する段階において一定の反応条件下で、少なくとも0.1μmの厚さの前記ハイブリッド層が堆積されることを特徴とする請求項1に記載の方法。 - 前記複数のハイブリッド層が、化学気相成長法プロセスにおける1つ以上の反応条件を順次に変えることによって形成されることを特徴とする請求項27に記載の方法。
- 反応ガスを提供する段階をさらに含み、
前記化学気相成長法が、前記反応ガスの存在下で行われ、
前記複数のハイブリッド層が、化学気相成長法プロセスにおける前記反応ガスの量を順次に変えることによって形成されることを特徴とする請求項28に記載の方法。 - あるハイブリッド層における前記ポリマーシリコンの量が、他のハイブリッド層における前記ポリマーシリコンの量と、少なくとも10重量%だけ異なることを特徴とする請求項27に記載の方法。
- 前記化学気相成長法が、プラズマ助長型であり、
前記複数のハイブリッド層が、プラズマ化学気相成長法プロセスにおけるプラズマ出力レベルを順次変化させることによって形成されることを特徴とする請求項28に記載の方法。 - 前記多層コーティング内の全体の内部応力が、各ハイブリッド層内の内部応力を調整することによって制御されることを特徴とする請求項27に記載の方法。
- 各ハイブリッド層を堆積するために使用される堆積条件を制御することにより、各ハイブリッド層内の前記内部応力が調整される請求項32に記載の方法。
- 前記内部応力に影響を及ぼす少なくとも2つの堆積条件を制御することにより、前記各ハイブリッド層内の内部応力が調整されることを特徴とする請求項33に記載の方法。
- 各ハイブリッド層が、プラズマ化学気相成長法(PE−CVD)によって堆積され、
制御される前記堆積条件が、堆積圧、堆積出力、ガス流量、及び電極距離から構成される群から選択されることを特徴とする請求項33に記載の方法。 - 前記多層コーティング内の全体の内部応力が平衡するように、各ハイブリッド層内の前記内部応力が、調整されることを特徴とする請求項32に記載の方法。
- 前記多層コーティング内の全体の内部応力がゼロであることを特徴とする請求項36に記載の方法。
- 前記表面に近い少なくとも1つのハイブリッド層が、前記表面から遠い少なくとも1つのハイブリッド層よりも小さな内部応力を有することを特徴とする請求項32に記載の方法。
- 前記仲介層が、光透過性であることを特徴とする請求項24に記載の方法。
- 前記仲介層が、無機材料を含むことを特徴とする請求項24に記載の方法。
- 前記無機材料が、クロム又は窒化シリコンであることを特徴とする請求項40に記載の方法。
- 前記前駆体物質が、ヘキサメチルジシロキサン又はジメチルシロキサンであり、
前記化学気相成長法が、プラズマ助長型であることを特徴とする請求項27に記載の方法。 - 前記複数のハイブリッド層の各ハイブリッド層において、一定の反応条件下で堆積された前記ハイブリッド層の厚さが、0.1から10μmの範囲であることを特徴とする請求項27に記載の方法。
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JP2014150063A (ja) | 2014-08-21 |
EP2097555A1 (en) | 2009-09-09 |
US20080102223A1 (en) | 2008-05-01 |
WO2008057394A1 (en) | 2008-05-15 |
JP6716521B2 (ja) | 2020-07-01 |
JP2016207660A (ja) | 2016-12-08 |
TWI514641B (zh) | 2015-12-21 |
KR20150084893A (ko) | 2015-07-22 |
JP2010508640A (ja) | 2010-03-18 |
JP2018018830A (ja) | 2018-02-01 |
TW200832776A (en) | 2008-08-01 |
CN103187455B (zh) | 2017-07-04 |
JP5491186B2 (ja) | 2014-05-14 |
EP2466665A1 (en) | 2012-06-20 |
CN103187455A (zh) | 2013-07-03 |
KR20090087457A (ko) | 2009-08-17 |
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