JP5965696B2 - 半導体装置及び半導体装置の作製方法 - Google Patents

半導体装置及び半導体装置の作製方法 Download PDF

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Publication number
JP5965696B2
JP5965696B2 JP2012077643A JP2012077643A JP5965696B2 JP 5965696 B2 JP5965696 B2 JP 5965696B2 JP 2012077643 A JP2012077643 A JP 2012077643A JP 2012077643 A JP2012077643 A JP 2012077643A JP 5965696 B2 JP5965696 B2 JP 5965696B2
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layer
electrode layer
film
oxide
insulating layer
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JP2013207247A5 (enrdf_load_stackoverflow
JP2013207247A (ja
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慎也 笹川
慎也 笹川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electrodes Of Semiconductors (AREA)
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JP2012077643A 2012-03-29 2012-03-29 半導体装置及び半導体装置の作製方法 Expired - Fee Related JP5965696B2 (ja)

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JP2013207247A JP2013207247A (ja) 2013-10-07
JP2013207247A5 JP2013207247A5 (enrdf_load_stackoverflow) 2015-04-30
JP5965696B2 true JP5965696B2 (ja) 2016-08-10

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6237279B2 (ja) 2014-01-31 2017-11-29 国立大学法人 奈良先端科学技術大学院大学 保護膜を具備する薄膜トランジスタ基板およびその製造方法
CN116234296B (zh) * 2022-01-18 2024-09-17 北京超弦存储器研究院 动态存储器以及soc芯片
CN116209244B (zh) * 2022-01-26 2024-02-23 北京超弦存储器研究院 动态存储器及存储装置
CN116234298B (zh) * 2022-01-26 2024-02-23 北京超弦存储器研究院 动态存储器及soc芯片
CN116234299B (zh) * 2022-01-27 2024-02-23 北京超弦存储器研究院 动态存储器及其制作方法、soc芯片

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120499A (ja) * 1992-10-05 1994-04-28 Sharp Corp 薄膜トランジスタ、液晶表示装置および薄膜トランジスタの製造方法
JP3600712B2 (ja) * 1997-06-25 2004-12-15 三菱電機株式会社 薄膜トランジスタおよびその製造方法ならびにこれを搭載した液晶表示装置
JP4342826B2 (ja) * 2003-04-23 2009-10-14 株式会社半導体エネルギー研究所 半導体素子の作製方法
JP5255756B2 (ja) * 2005-08-23 2013-08-07 株式会社半導体エネルギー研究所 半導体装置の作製方法

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