JP5964234B2 - 金属錯体量子結晶の製造方法 - Google Patents
金属錯体量子結晶の製造方法 Download PDFInfo
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- JP5964234B2 JP5964234B2 JP2012532985A JP2012532985A JP5964234B2 JP 5964234 B2 JP5964234 B2 JP 5964234B2 JP 2012532985 A JP2012532985 A JP 2012532985A JP 2012532985 A JP2012532985 A JP 2012532985A JP 5964234 B2 JP5964234 B2 JP 5964234B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B17/00—Sulfur; Compounds thereof
- C01B17/64—Thiosulfates; Dithionites; Polythionates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G5/00—Compounds of silver
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- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C229/00—Compounds containing amino and carboxyl groups bound to the same carbon skeleton
- C07C229/02—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton
- C07C229/04—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated
- C07C229/06—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton
- C07C229/08—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to hydrogen atoms
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic System
- C07F1/10—Silver compounds
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
- C01P2004/24—Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
Description
そこで、原点に帰って考えると、プラズモン現象における増強の大きさは金属表面における電磁場に関する吸着分子中に存在するさまざまな結合の位置及び配向を含む多数のパラメータに依存するといわれるので、SERS法における最適基板を提供し、再現性を確保するためにはSERS現象が生ずるメカニズムに関与する(i)入射光の局所的強度を増強する金属中の表面プラズモン共鳴の最適物理的状況の達成と(ii)金属表面とラマン活性分子との間の電荷移動錯体の形成及びその後の遷移という最適化学的状況の達成が必要であり、最適物理的状況の達成のためには、最適状態への粒子サイズ及び配列の制御が難しいものの、蒸着法の採用も可能であるが、蒸着法では同時に電荷移動錯体の形成という最適化学的状況を達成することができないという観点に達した。
2)また、金属錯体は金属成分がイオン化しやすい状態にあり、(ii)イオン化金属表面にラマン活性分子が吸着して電荷移動錯体を形成するため、最適化学状態を達成し、再現性のよい結果を招来する。
3)金属錯体は電荷の調整によりタンパク質であるウイルス等を吸着しやすい電荷をもつことができ、例えば量子ドットにタンパク質アビジン又は生体物質ビオチンを結合させた量子ドットを合成し、タンパク検出に好適なSERS基板も形成させることができる。
4)金属錯体水溶液に抗体を分散させ、金属錯体ともに担体上に析出させると、抗体の選択により適切な抗原のみを吸着して抗原抗体反応を検出することができる。
5)金属針を担体として本発明の量子結晶を針先に形成すれば、患部に直接金属針を挿入してレーザ光を照射することによりプラズモン効果を利用して温熱療法を実施することができる。
本発明においては図7(a)〜(c)に示すように、ガラス又はプラスチック板1上に円形打ち抜き成形して皿上の0.1mm程度の薄い金属板2を貼り付けて製造することができる。この基板は金属部分2が皿状に形成されるので、上記分散液を滴下すると、液滴3となって盛り上がる(図7(b))。その後液滴を窒素ブロー等で吹き飛ばすと、金属錯体が析出して凝集域4が金属表面上に形成されて金属ナノクラスタを量子ドットとする測定基板が作成される(図7(c))。薄い金属板2に代え、金属膜を化学鍍金、蒸着により形成するようにしてもよい。
Claims (9)
- 金、銀、銅、ニッケル、亜鉛、アルミニウム又は白金から選ばれるプラズモン金属と配位子とからなるプラズモン金属錯体水溶液を用意し、プラズモン金属より電極電位が卑なる金属又は金属合金またはプラズモン金属より卑なる電極電位を持たせた金属からなる担体と接触させて両者の電極電位差によってプラズモン金属錯体を析出させ、プラズモン増強効果を有する量子結晶を前記金属担体上に配列することを特徴とするプラズモン増強効果を有する金属錯体量子結晶の製造方法。
- 前記担体が金属基板、金属粒子、金属針、キャピラリー内金属膜である請求項1記載の製造方法。
- 前記金属担体上で形成された金属錯体の量子結晶中のナノクラスターを形成するプラズモン金属の少なくとも一部が配位子とイオン結合状態にある請求項1記載の製造方法。
- プラズモン金属錯体がアミノ酸イオン、アンモニアイオン、チオ硫酸イオン及び硝酸イオンの1種を配位子として形成される請求項1記載の製造方法。
- 前記プラズモン金属が金、銀または銅から選ばれる請求項1記載の製造方法。
- プラズモン金属錯体水溶液が500ppmから5000ppmの濃度である請求項1記載の製造方法。
- プラズモン金属錯体水溶液が500ppmから2000ppmの濃度である請求項1記載の製造方法。
- プラズモン金属錯体水溶液が銀と配位子とからなるプラズモン金属錯体を含み、銀と配位子とで銀ナノクラスタを形成するに分散剤を添加する場合、銀ナノクラスタに対する分散剤のモル分率が銀原子量換算で1/50〜1/150である請求項1記載の製造方法。
- プラズモン金属錯体水溶液に抗体を添加し、金属基板上に抗体とともに金属錯体を析出させ、対応する抗原に特異的に反応する抗原−抗体反応用測定基板とする請求項1記載の製造方法。
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JP2010198555 | 2010-09-06 | ||
JP2010198555 | 2010-09-06 | ||
PCT/JP2011/070274 WO2012033097A1 (ja) | 2010-09-06 | 2011-09-06 | 金属錯体量子結晶の製造方法 |
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EP (1) | EP2615059B1 (ja) |
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JPWO2013065747A1 (ja) * | 2011-10-31 | 2015-04-02 | 有限会社マイテック | 金属錯体量子結晶及びそれを用いる生化学物質の表面増強ラマン散乱(sers)分析法 |
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KR20120022754A (ko) * | 2009-03-04 | 2012-03-12 | 유키 하세가와 | 표면 증강 라먼 산란 활성 측정 기판 |
JP6188826B2 (ja) * | 2013-01-29 | 2017-08-30 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 外面に表面増感分光法要素を有する装置 |
US10067060B2 (en) | 2013-01-30 | 2018-09-04 | Hewlett-Packard Development Company, L.P. | Polarization selective surface enhanced raman spectroscopy |
CN105102962A (zh) | 2013-01-30 | 2015-11-25 | 惠普发展公司,有限责任合伙企业 | 偏振选择性表面增强拉曼光谱学分析 |
JP6294614B2 (ja) * | 2013-05-08 | 2018-03-14 | 有限会社マイテック | 癌関連物質の定量方法 |
CN103400900B (zh) * | 2013-08-08 | 2017-05-31 | 扬州大学 | ZnO量子点基深紫外传感器及制备方法 |
ES2905092T3 (es) * | 2014-05-08 | 2022-04-07 | Mytech Co Ltd | Chip plasmónico y procedimientos de diagnóstico de enfermedades cancerígenas empleando una imagen fluorescente y espectroscopia Raman respectivamente |
JP2017156104A (ja) * | 2016-02-29 | 2017-09-07 | 西松建設株式会社 | 光増強素子とその製造方法ならびに分光分析用キットおよび分光分析方法 |
JP6300864B2 (ja) * | 2016-08-09 | 2018-03-28 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 外面に表面増感分光法要素を有する装置 |
US11609229B2 (en) * | 2020-04-30 | 2023-03-21 | Mytech Co. Ltd. | Fluorescence counting system for quantifying viruses or antibodies on an immobilized metal substrate by using an antigen-antibody reaction |
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2011
- 2011-09-06 US US13/821,235 patent/US9139907B2/en active Active
- 2011-09-06 CN CN201180049341.2A patent/CN103168001B/zh active Active
- 2011-09-06 WO PCT/JP2011/070274 patent/WO2012033097A1/ja active Application Filing
- 2011-09-06 JP JP2012532985A patent/JP5964234B2/ja active Active
- 2011-09-06 EP EP11823572.0A patent/EP2615059B1/en active Active
- 2011-09-06 KR KR1020137008636A patent/KR101832206B1/ko active IP Right Grant
- 2011-09-06 CN CN201510177698.9A patent/CN104880452B/zh active Active
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- 2016-06-29 JP JP2016128252A patent/JP6294911B2/ja active Active
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JP2006083450A (ja) * | 2004-09-17 | 2006-03-30 | Fuji Photo Film Co Ltd | 微細構造体およびその製造方法 |
WO2006065762A2 (en) * | 2004-12-13 | 2006-06-22 | University Of South Carolina | Surface enhanced raman spectroscopy using shaped gold nanoparticles |
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JPWO2013065747A1 (ja) * | 2011-10-31 | 2015-04-02 | 有限会社マイテック | 金属錯体量子結晶及びそれを用いる生化学物質の表面増強ラマン散乱(sers)分析法 |
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Publication number | Publication date |
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CN104880452B (zh) | 2018-04-10 |
US9139907B2 (en) | 2015-09-22 |
JP6294911B2 (ja) | 2018-03-14 |
EP2615059A4 (en) | 2014-03-12 |
US20130230660A1 (en) | 2013-09-05 |
KR101832206B1 (ko) | 2018-02-26 |
WO2012033097A1 (ja) | 2012-03-15 |
CN103168001A (zh) | 2013-06-19 |
KR20130102066A (ko) | 2013-09-16 |
CN104880452A (zh) | 2015-09-02 |
CN103168001B (zh) | 2015-05-20 |
JP2016197114A (ja) | 2016-11-24 |
EP2615059B1 (en) | 2017-11-08 |
JPWO2012033097A1 (ja) | 2014-01-20 |
EP2615059A1 (en) | 2013-07-17 |
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