JP5963860B2 - パワーモジュールの劣化検知装置 - Google Patents

パワーモジュールの劣化検知装置 Download PDF

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Publication number
JP5963860B2
JP5963860B2 JP2014521238A JP2014521238A JP5963860B2 JP 5963860 B2 JP5963860 B2 JP 5963860B2 JP 2014521238 A JP2014521238 A JP 2014521238A JP 2014521238 A JP2014521238 A JP 2014521238A JP 5963860 B2 JP5963860 B2 JP 5963860B2
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Japan
Prior art keywords
signal
deterioration
temperature
semiconductor chip
power module
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JP2014521238A
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English (en)
Japanese (ja)
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JPWO2013187207A1 (ja
Inventor
古谷　真一
真一 古谷
輝明 田中
輝明 田中
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2014521238A priority Critical patent/JP5963860B2/ja
Publication of JPWO2013187207A1 publication Critical patent/JPWO2013187207A1/ja
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/40—Testing power supplies
    • G01R31/42—AC power supplies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/66—Testing of connections, e.g. of plugs or non-disconnectable joints
    • G01R31/70—Testing of connections between components and printed circuit boards
    • G01R31/71—Testing of solder joints

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Inverter Devices (AREA)
JP2014521238A 2012-06-14 2013-05-23 パワーモジュールの劣化検知装置 Active JP5963860B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014521238A JP5963860B2 (ja) 2012-06-14 2013-05-23 パワーモジュールの劣化検知装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012134362 2012-06-14
JP2012134362 2012-06-14
PCT/JP2013/064356 WO2013187207A1 (ja) 2012-06-14 2013-05-23 パワーモジュールの劣化検知装置
JP2014521238A JP5963860B2 (ja) 2012-06-14 2013-05-23 パワーモジュールの劣化検知装置

Publications (2)

Publication Number Publication Date
JPWO2013187207A1 JPWO2013187207A1 (ja) 2016-02-04
JP5963860B2 true JP5963860B2 (ja) 2016-08-03

Family

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Family Applications (1)

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JP2014521238A Active JP5963860B2 (ja) 2012-06-14 2013-05-23 パワーモジュールの劣化検知装置

Country Status (3)

Country Link
JP (1) JP5963860B2 (zh)
CN (1) CN104380126B (zh)
WO (1) WO2013187207A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11016045B2 (en) 2017-12-18 2021-05-25 Kabushiki Kaisha Toshiba Inverter device and method for detecting heat dissipation characteristics of inverter device

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6432126B2 (ja) * 2013-11-08 2018-12-05 株式会社明電舎 半導体モジュールの検査方法及び半導体システム
JP6015718B2 (ja) * 2014-07-14 2016-10-26 トヨタ自動車株式会社 情報出力装置
EP3109649B1 (en) * 2015-06-25 2019-08-07 ABB Schweiz AG Aging determination of power semiconductor device in electric drive system
DE102016201596A1 (de) * 2016-02-03 2017-08-03 Robert Bosch Gmbh Alterungsdetektor für eine elektrische Schaltungskomponente, Verfahren zur Überwachung einer Alterung einer Schaltungskomponente, Bauelement und Steuergerät
EP3203250B1 (en) * 2016-02-03 2023-05-24 Mitsubishi Electric R&D Centre Europe B.V. Method and device for estimating a level of damage or a lifetime expectation of a power semiconductor module
US10560047B2 (en) 2017-10-11 2020-02-11 Toyota Motor Engineering & Manufacturing North America, Inc. Method and apparatus for predicting degradation in power modules
JP6633719B1 (ja) * 2018-11-07 2020-01-22 電元社トーア株式会社 インバータ電源装置
CN112903001A (zh) * 2019-12-03 2021-06-04 财团法人纺织产业综合研究所 织物定型机的操作方法
CN113027606B (zh) * 2020-02-17 2022-05-03 陆忠利 发动机自动智能监控系统
CN113497613A (zh) 2020-04-03 2021-10-12 台达电子企业管理（上海）有限公司 复合开关电路结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3668708B2 (ja) * 2001-10-22 2005-07-06 株式会社日立製作所 故障検知システム
US7356441B2 (en) * 2005-09-28 2008-04-08 Rockwell Automation Technologies, Inc. Junction temperature prediction method and apparatus for use in a power conversion module
US7995012B2 (en) * 2005-12-27 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8151094B2 (en) * 2005-12-30 2012-04-03 Intel Corporation Dynamically estimating lifetime of a semiconductor device
JP2007240368A (ja) * 2006-03-09 2007-09-20 Fuji Electric Holdings Co Ltd 半導体素子の劣化検知方法
GB2457752B (en) * 2006-06-30 2010-05-05 Intel Corp Leakage power estimation
CN101458285A (zh) * 2007-12-13 2009-06-17 中芯国际集成电路制造(上海)有限公司 可靠性测试的方法和装置
JP2011247735A (ja) * 2010-05-26 2011-12-08 Denki Kagaku Kogyo Kk レーザーパルス励起赤外線カメラ測定法による金属／セラミックス接合基板の熱特性の面内分布の測定方法
CN102353885A (zh) * 2011-07-05 2012-02-15 中国科学院微电子研究所 一种绝缘体上硅场效应晶体管热阻提取方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11016045B2 (en) 2017-12-18 2021-05-25 Kabushiki Kaisha Toshiba Inverter device and method for detecting heat dissipation characteristics of inverter device

Also Published As

Publication number Publication date
CN104380126B (zh) 2017-03-29
CN104380126A (zh) 2015-02-25
WO2013187207A1 (ja) 2013-12-19
JPWO2013187207A1 (ja) 2016-02-04

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