JP5960403B2 - Current sensor - Google Patents

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JP5960403B2
JP5960403B2 JP2011209157A JP2011209157A JP5960403B2 JP 5960403 B2 JP5960403 B2 JP 5960403B2 JP 2011209157 A JP2011209157 A JP 2011209157A JP 2011209157 A JP2011209157 A JP 2011209157A JP 5960403 B2 JP5960403 B2 JP 5960403B2
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泰典 川口
泰典 川口
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Yazaki Corp
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本発明は、電流センサに関する。   The present invention relates to a current sensor.

この種の従来の電流センサとして、特許文献1に開示されたものがある。この電流センサ50は、図7に示すように、電流が流れる導体であるバスバー51と、バスバー51を流れる電流値を算出するセンサ本体52と、このセンサ本体52を収容するハウジング53と、バスバー51及びセンサ本体52を外側から囲む磁気シールド部材54と、この磁気シールド部材54をハウジング53との間で固定する下カバー55とを備えている。   A conventional current sensor of this type is disclosed in Patent Document 1. As shown in FIG. 7, the current sensor 50 includes a bus bar 51 that is a conductor through which a current flows, a sensor main body 52 that calculates a current value flowing through the bus bar 51, a housing 53 that accommodates the sensor main body 52, and the bus bar 51. And a magnetic shield member 54 that surrounds the sensor main body 52 from the outside, and a lower cover 55 that fixes the magnetic shield member 54 to the housing 53.

センサ本体52は、磁界強度(磁束密度)を検出する磁気検出素子であるホール素子52aと、ホール素子52aが固定され、ホール素子52aの検出した磁気量に基づいて電流値を算出する演算回路を有する回路基板52bとから構成されている。   The sensor main body 52 includes a Hall element 52a that is a magnetic detection element that detects magnetic field strength (magnetic flux density), and an arithmetic circuit that fixes the Hall element 52a and calculates a current value based on the amount of magnetism detected by the Hall element 52a. Circuit board 52b.

磁気シールド部材54は、略コ字形状に形成されている。ホール素子52aは、このコ字形状の磁気シールド部材54に囲まれる位置に配置される。   The magnetic shield member 54 is formed in a substantially U shape. The hall element 52 a is disposed at a position surrounded by the U-shaped magnetic shield member 54.

バスバー51に電流が通電されると、バスバー51から電流量に比例する磁界が発生する。センサ本体52は、この磁界をホール素子52aが検出し、検出した磁界の大きさに基づいた電流値を算出する。又、磁気シールド部材54は外部磁界を遮蔽する。   When a current is passed through the bus bar 51, a magnetic field proportional to the amount of current is generated from the bus bar 51. In the sensor body 52, the Hall element 52a detects this magnetic field, and calculates a current value based on the magnitude of the detected magnetic field. The magnetic shield member 54 shields an external magnetic field.

ここで、ホール素子52aは、磁気シールド部材54によって外部磁界の悪影響がないとみなし、磁気シールド部材54内のZ方向の中央位置(図4のZ=0の位置)に設置されるのが通常である。   Here, it is assumed that the Hall element 52a is not adversely affected by the external magnetic field by the magnetic shield member 54, and is usually installed at the center position in the Z direction (position Z = 0 in FIG. 4) in the magnetic shield member 54. It is.

特開2010−243440号公報JP 2010-243440 A

しかしながら、磁気シールド部材54は、外部磁界の内部侵入を完全に防止することができない。そのため、磁気シールド部材54の内部に侵入する外部磁界によって検出誤差が発生する恐れがある。特に、電流センサ50が外部磁界の強い状況下に設置される場合には、外部磁界に対して強い電流センサ50が要望される。   However, the magnetic shield member 54 cannot completely prevent the internal penetration of the external magnetic field. Therefore, a detection error may occur due to an external magnetic field that enters the magnetic shield member 54. In particular, when the current sensor 50 is installed in a situation where the external magnetic field is strong, the current sensor 50 strong against the external magnetic field is desired.

そこで、本発明は、前記した課題を解決すべくなされたものであり、外部磁界に対して強い電流センサを提供することを目的とする。   Accordingly, the present invention has been made to solve the above-described problems, and an object thereof is to provide a current sensor that is strong against an external magnetic field.

本発明は、電流が流れる導体と、磁気を検出する磁気検出素子を有し、前記磁気検出素子の検出した磁気量に基づいて電流値を算出するセンサ本体と、前記導体及び前記磁気検出素子を囲む外側位置に配置された磁気シールド部材とを備えた電流センサであって、前記磁気検出素子は、一方向の磁気感度を持ち、その磁気感度方向が前記導体を流れる電流による磁束の検出に適した方向とし、且つ、前記磁気感度方向の外部磁界のうち前記磁気シールド部材の開口部を介して侵入する侵入外部磁界(磁気シールド部材の開口部を介して該磁気シールド部材内に侵入する外部磁界を「侵入外部磁界」と定義する)において、前記磁気検出素子の位置における前記侵入外部磁界による磁束の向きが磁気感度方向とほぼ直交する位置に配置されたことを特徴とする電流センサである。 The present invention includes a conductor through which a current flows and a magnetic detection element that detects magnetism, and a sensor body that calculates a current value based on the amount of magnetism detected by the magnetic detection element; the conductor and the magnetic detection element; The magnetic sensor has a magnetic sensitivity in one direction, and the magnetic sensitivity direction is suitable for detecting a magnetic flux due to a current flowing through the conductor. Of the external magnetic field in the direction of magnetic sensitivity and entering through the opening of the magnetic shield member (external magnetic field entering into the magnetic shield member through the opening of the magnetic shield member) in is defined as "intrusion external magnetic field"), this said entering external magnetic field due to the magnetic flux direction at the position of the magnetic detecting elements are arranged in a position substantially perpendicular to the magnetic sensitivity direction A current sensor according to claim.

本発明によれば、磁気検出素子は、導体を流れる電流によって発生する磁界を検出するが、磁気シールド部材の内部に侵入する外部磁界を検出しない。従って、電流センサは、外部磁界に対して強い。   According to the present invention, the magnetic detection element detects the magnetic field generated by the current flowing through the conductor, but does not detect the external magnetic field that enters the magnetic shield member. Therefore, the current sensor is strong against an external magnetic field.

本発明の一実施形態を示し、電流センサの斜視図である。1 is a perspective view of a current sensor according to an embodiment of the present invention. 本発明の一実施形態を示し、電流センサの断面図である。1 is a cross-sectional view of a current sensor according to an embodiment of the present invention. 本発明の一実施形態を示し、外部磁界を印加した場合にあって、磁気シールド部材内に侵入する外部磁界の状態を示す模式図である。FIG. 5 is a schematic diagram showing an embodiment of the present invention and a state of an external magnetic field that penetrates into a magnetic shield member when an external magnetic field is applied. 本発明の一実施形態を示し、磁気シールド部材内のZ方向の座標を示す図である。It is a figure which shows one Embodiment of this invention and shows the coordinate of the Z direction in a magnetic shielding member. 本発明の一実施形態を示し、Z方向位置に対する外部磁界のZ方向透過率を示す特性線図である。It is a characteristic diagram which shows one Embodiment of this invention and shows the Z direction transmittance | permeability of the external magnetic field with respect to a Z direction position. 本発明の一実施形態を示し、各周波数毎のZ方向の磁束密度を示す特性線図である。It is a characteristic diagram which shows one Embodiment of this invention and shows the magnetic flux density of the Z direction for every frequency. 従来例を示し、電流センサの分解斜視図である。It is a disassembled perspective view of a current sensor showing a conventional example.

以下、本発明の一実施形態を図面に基づいて説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

図1〜図6は本発明の一実施形態を示す。図1及び図2に示すように、電流センサ1は、電流が流れる導体であるバスバー2と、バスバー2を流れる電流値を算出するセンサ本体3と、このセンサ本体3を収容する樹脂ケース6と、樹脂ケース6に固定され、バスバー2及びセンサ本体3を外側から囲む磁気シールド部材10とを備えている。   1 to 6 show an embodiment of the present invention. As shown in FIGS. 1 and 2, the current sensor 1 includes a bus bar 2 that is a conductor through which a current flows, a sensor body 3 that calculates a current value that flows through the bus bar 2, and a resin case 6 that houses the sensor body 3. The magnetic shield member 10 is fixed to the resin case 6 and surrounds the bus bar 2 and the sensor body 3 from the outside.

バスバー2は、ストレート状の金属プレートである。バスバー2は、その中央箇所が樹脂ケース6内を貫通し、その両端部が樹脂ケース6より露出している。   The bus bar 2 is a straight metal plate. The central portion of the bus bar 2 passes through the resin case 6, and both end portions thereof are exposed from the resin case 6.

樹脂ケース6は、バスバー2、センサ本体3をインサート部品としてインサート樹脂成形により形成されている。樹脂ケース6は、外部出力用コネクタ部6aを一体に有する。   The resin case 6 is formed by insert resin molding using the bus bar 2 and the sensor body 3 as insert parts. The resin case 6 integrally has an external output connector portion 6a.

磁気シールド部材10は、底面部11と、この底面部11の両端より上方に突出する一対の側面壁12とから略コ字形状に形成されている。磁気シールド部材10は、樹脂ケース6に例えば圧入によって固定されている。磁気シールド部材10は、強磁性材である。   The magnetic shield member 10 is formed in a substantially U shape from a bottom surface portion 11 and a pair of side wall walls 12 projecting upward from both ends of the bottom surface portion 11. The magnetic shield member 10 is fixed to the resin case 6 by, for example, press fitting. The magnetic shield member 10 is a ferromagnetic material.

センサ本体3は、磁界強度(磁束密度)を検出する磁気検出素子であるホール素子4と、ホール素子4が固定され、ホール素子4の検出した磁気量に基づいて電流値を算出する演算回路を有する回路基板5とから構成されている。   The sensor body 3 includes a Hall element 4 that is a magnetic detection element that detects magnetic field strength (magnetic flux density), and an arithmetic circuit that fixes the Hall element 4 and calculates a current value based on the amount of magnetism detected by the Hall element 4. And a circuit board 5 having the same.

ホール素子4は、磁気シールド部材10の底面部11の上方位置に配置されている。ホール素子4は、一方向のみの磁気感度を持っている。ホール素子4は、その磁気感度方向がバスバー2を流れる電流による磁界強度(磁束密度)の検出に適した方向(Z方向)で、且つ、外部磁界による磁束の向きが直交する位置に配置されている。   The hall element 4 is disposed above the bottom surface portion 11 of the magnetic shield member 10. The Hall element 4 has magnetic sensitivity in only one direction. The Hall element 4 is arranged at a position where the magnetic sensitivity direction is a direction (Z direction) suitable for detecting the magnetic field strength (magnetic flux density) due to the current flowing through the bus bar 2 and the direction of the magnetic flux due to the external magnetic field is orthogonal. Yes.

外部磁界による磁束の向きが直交する位置は、例えば次のようにして決定する。磁気シールド部材10への外部磁界の内部侵入は、磁気シールド部材10の形状等によって異なる。コ字形状のシールド部材10の内部領域について、想定される外部磁界(他の電流経路からの磁界、磁石等)に基づき磁場シュミレーションを行う。例えば、磁場シュミレーションで図3に示すような結果が得られる。図3のa,b,cの位置は、ホール素子4の磁気感度方向と外部磁界による磁束の向き(Y方向の向き)が直交する位置となり、このいずれかの位置にホール素子4を配置する。   The position where the direction of the magnetic flux by the external magnetic field is orthogonal is determined as follows, for example. The internal penetration of the external magnetic field into the magnetic shield member 10 varies depending on the shape of the magnetic shield member 10 and the like. Magnetic field simulation is performed on the inner region of the U-shaped shield member 10 based on an assumed external magnetic field (magnetic field, magnet, etc. from another current path). For example, the result shown in FIG. 3 is obtained by magnetic field simulation. The positions a, b, and c in FIG. 3 are positions where the magnetic sensitivity direction of the Hall element 4 and the direction of the magnetic flux by the external magnetic field (direction in the Y direction) are orthogonal to each other, and the Hall element 4 is disposed at any one of these positions. .

図4に示すように、磁気シールド部材10の内部をZ方向の座標(Z=0が中央)とし、外部磁界のZ方向透過率を調べると、図5に示す特性線が得られた。つまり、外部磁界のZ方向透過率は、Z=4の位置で0(ゼロ)となり、この位置(図3のa位置に相当)に配置する。この位置では、Z方向を感度方向とするホール素子4は、外部磁界を検出しない。   As shown in FIG. 4, when the inside of the magnetic shield member 10 is coordinated in the Z direction (Z = 0 is the center) and the Z direction transmittance of the external magnetic field is examined, the characteristic line shown in FIG. 5 is obtained. That is, the Z direction transmittance of the external magnetic field is 0 (zero) at the position of Z = 4, and the external magnetic field is disposed at this position (corresponding to the position a in FIG. 3). At this position, the Hall element 4 whose sensitivity direction is the Z direction does not detect an external magnetic field.

上記構成において、バスバー2に電流が通電されると、バスバー2から電流量に比例する磁界が発生する。センサ本体3は、この磁界をホール素子4が検出し、検出した磁界の大きさに基づいた電流値を算出する。   In the above configuration, when a current is passed through the bus bar 2, a magnetic field proportional to the amount of current is generated from the bus bar 2. In the sensor body 3, the Hall element 4 detects this magnetic field, and calculates a current value based on the magnitude of the detected magnetic field.

ここで、ホール素子4は、バスバー2を流れる電流によって発生する磁界を検出するが、上記したように、磁気シールド部材10の内部に侵入する外部磁界を検出しない。従って、電流センサ1は、磁気シールド部材10内に侵入する外部磁界によって検出誤差を発生せず、外部磁界に対して強い。   Here, the Hall element 4 detects the magnetic field generated by the current flowing through the bus bar 2, but does not detect the external magnetic field that enters the inside of the magnetic shield member 10 as described above. Therefore, the current sensor 1 does not generate a detection error due to the external magnetic field entering the magnetic shield member 10 and is strong against the external magnetic field.

又、外部磁界について、各周波数毎のZ方向の磁束密度を示す特性線が図6に示されている。図6に示すように、外部磁界のZ方向透過率が0の位置(Z=4)は、磁束密度が周波数で変化し難い位置となる。従って、電流センサ1の出力応答特性が向上するという利点もある。   FIG. 6 shows characteristic lines indicating the magnetic flux density in the Z direction for each frequency with respect to the external magnetic field. As shown in FIG. 6, the position where the Z-direction transmittance of the external magnetic field is 0 (Z = 4) is a position where the magnetic flux density hardly changes with frequency. Therefore, there is an advantage that the output response characteristic of the current sensor 1 is improved.

前記実施形態では、ホール素子4は、その磁気感度方向に対し、外部磁界による磁束の向き(Y方向の向き)が直交する位置に配置されているが、外部磁界による磁束の向き(Y方向の向き)が正確に直交する位置がないときには、極力直交する位置、ほぼ直交する位置に配置する。   In the embodiment, the Hall element 4 is disposed at a position where the direction of the magnetic flux by the external magnetic field (direction of the Y direction) is orthogonal to the magnetic sensitivity direction. When there is no position where the orientation is accurately orthogonal, the position is orthogonally crossed as much as possible, and almost perpendicular.

前記実施形態では、導体は、バスバー2にて形成されているが、バスバー2以外で形成しても良い。   In the above embodiment, the conductor is formed by the bus bar 2, but may be formed by other than the bus bar 2.

前記実施形態では、磁気検出素子は、ホール素子4であるが、バスバー2に流れる電流による磁界強度(磁束密度)を検出できるものであれば良い。   In the above-described embodiment, the magnetic detection element is the Hall element 4, but may be any element that can detect the magnetic field strength (magnetic flux density) due to the current flowing through the bus bar 2.

1 電流センサ
2 バスバー(導体)
3 センサ本体
4 ホール素子(磁気検出素子)
10 磁気シールド部材
1 Current sensor 2 Bus bar (conductor)
3 Sensor body 4 Hall element (magnetic detection element)
10 Magnetic shield member

Claims (1)

電流が流れる導体と、磁気を検出する磁気検出素子を有し、前記磁気検出素子の検出した磁気量に基づいて電流値を算出するセンサ本体と、前記導体及び前記磁気検出素子を囲む外側位置に配置された磁気シールド部材とを備えた電流センサであって、
前記磁気検出素子は、
一方向の磁気感度を持ち、その磁気感度方向が前記導体を流れる電流による磁束の検出に適した方向とし、且つ、
前記磁気感度方向の外部磁界のうち前記磁気シールド部材の開口部を介して侵入する侵入外部磁界において、前記磁気検出素子の位置における前記侵入外部磁界による磁束の向きが磁気感度方向とほぼ直交する位置に配置されたことを特徴とする電流センサ。
A sensor body that has a conductor through which a current flows and a magnetic detection element that detects magnetism, calculates a current value based on the amount of magnetism detected by the magnetic detection element, and an outer position that surrounds the conductor and the magnetic detection element A current sensor comprising a magnetic shield member disposed;
The magnetic detection element is
Having a magnetic sensitivity in one direction, the magnetic sensitivity direction being a direction suitable for detection of magnetic flux due to a current flowing through the conductor, and
Of the external magnetic field in the magnetic sensitivity direction, an intruding external magnetic field that enters through the opening of the magnetic shield member, a position in which the magnetic flux direction by the intruding external magnetic field at the position of the magnetic detection element is substantially orthogonal to the magnetic sensitivity direction A current sensor characterized by being arranged in
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