JP5959833B2 - 側壁イメージ転写からパターンを作る改善された方法 - Google Patents

側壁イメージ転写からパターンを作る改善された方法 Download PDF

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Publication number
JP5959833B2
JP5959833B2 JP2011260794A JP2011260794A JP5959833B2 JP 5959833 B2 JP5959833 B2 JP 5959833B2 JP 2011260794 A JP2011260794 A JP 2011260794A JP 2011260794 A JP2011260794 A JP 2011260794A JP 5959833 B2 JP5959833 B2 JP 5959833B2
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JP
Japan
Prior art keywords
etching mask
etching
layer
covering
covering layer
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Expired - Fee Related
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JP2011260794A
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English (en)
Japanese (ja)
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JP2012138570A5 (enExample
JP2012138570A (ja
Inventor
セバスチャン、バルノラ
ジェローム、ベルダン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication of JP2012138570A5 publication Critical patent/JP2012138570A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2011260794A 2010-11-30 2011-11-29 側壁イメージ転写からパターンを作る改善された方法 Expired - Fee Related JP5959833B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR10/04655 2010-11-30
FR1004655A FR2968122B1 (fr) 2010-11-30 2010-11-30 Procédé de réalisation amélioré d'un motif a partir du transfert par espaceurs latéraux

Publications (3)

Publication Number Publication Date
JP2012138570A JP2012138570A (ja) 2012-07-19
JP2012138570A5 JP2012138570A5 (enExample) 2015-01-15
JP5959833B2 true JP5959833B2 (ja) 2016-08-02

Family

ID=44276342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011260794A Expired - Fee Related JP5959833B2 (ja) 2010-11-30 2011-11-29 側壁イメージ転写からパターンを作る改善された方法

Country Status (7)

Country Link
US (1) US8669188B2 (enExample)
EP (1) EP2458621B1 (enExample)
JP (1) JP5959833B2 (enExample)
KR (1) KR101881594B1 (enExample)
FR (1) FR2968122B1 (enExample)
SG (1) SG181266A1 (enExample)
TW (1) TWI529777B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2990794B1 (fr) * 2012-05-16 2016-11-18 Commissariat Energie Atomique Procede de realisation d'un substrat muni de zones actives variees et de transistors planaires et tridimensionnels
US8735296B2 (en) * 2012-07-18 2014-05-27 International Business Machines Corporation Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer
US8716133B2 (en) * 2012-08-23 2014-05-06 International Business Machines Corporation Three photomask sidewall image transfer method
US9040371B2 (en) 2013-08-07 2015-05-26 International Business Machines Corporation Integration of dense and variable pitch fin structures
US9293345B2 (en) 2013-08-16 2016-03-22 Globalfoundries Inc. Sidewall image transfer with a spin-on hardmask
US9064901B1 (en) 2013-12-23 2015-06-23 International Business Machines Corporation Fin density control of multigate devices through sidewall image transfer processes
US9252243B2 (en) 2014-02-07 2016-02-02 International Business Machines Corporation Gate structure integration scheme for fin field effect transistors
CN106373880B (zh) * 2015-07-22 2021-05-25 联华电子股份有限公司 半导体元件及其形成方法
CN112768351B (zh) * 2019-11-06 2022-06-10 长鑫存储技术有限公司 一种图形形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7151040B2 (en) * 2004-08-31 2006-12-19 Micron Technology, Inc. Methods for increasing photo alignment margins
US7615445B2 (en) * 2006-09-21 2009-11-10 Sandisk Corporation Methods of reducing coupling between floating gates in nonvolatile memory
US7479429B2 (en) * 2007-01-31 2009-01-20 Freescale Semiconductor, Inc. Split game memory cell method
KR100966976B1 (ko) * 2007-12-28 2010-06-30 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US9330934B2 (en) * 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates

Also Published As

Publication number Publication date
FR2968122B1 (fr) 2012-12-07
KR101881594B1 (ko) 2018-07-24
EP2458621A1 (fr) 2012-05-30
TW201222627A (en) 2012-06-01
KR20120059426A (ko) 2012-06-08
FR2968122A1 (fr) 2012-06-01
EP2458621B1 (fr) 2015-02-25
SG181266A1 (en) 2012-06-28
US20120132616A1 (en) 2012-05-31
JP2012138570A (ja) 2012-07-19
TWI529777B (en) 2016-04-11
US8669188B2 (en) 2014-03-11

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