FR2968122B1 - Procédé de réalisation amélioré d'un motif a partir du transfert par espaceurs latéraux - Google Patents

Procédé de réalisation amélioré d'un motif a partir du transfert par espaceurs latéraux

Info

Publication number
FR2968122B1
FR2968122B1 FR1004655A FR1004655A FR2968122B1 FR 2968122 B1 FR2968122 B1 FR 2968122B1 FR 1004655 A FR1004655 A FR 1004655A FR 1004655 A FR1004655 A FR 1004655A FR 2968122 B1 FR2968122 B1 FR 2968122B1
Authority
FR
France
Prior art keywords
realization method
lateral spacer
improved pattern
pattern realization
spacer transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1004655A
Other languages
English (en)
French (fr)
Other versions
FR2968122A1 (fr
Inventor
Sebastien Barnola
Jerome Belledent
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1004655A priority Critical patent/FR2968122B1/fr
Priority to US13/301,251 priority patent/US8669188B2/en
Priority to SG2011086600A priority patent/SG181266A1/en
Priority to TW100143525A priority patent/TWI529777B/zh
Priority to EP11354071.0A priority patent/EP2458621B1/fr
Priority to KR1020110126366A priority patent/KR101881594B1/ko
Priority to JP2011260794A priority patent/JP5959833B2/ja
Publication of FR2968122A1 publication Critical patent/FR2968122A1/fr
Application granted granted Critical
Publication of FR2968122B1 publication Critical patent/FR2968122B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
FR1004655A 2010-11-30 2010-11-30 Procédé de réalisation amélioré d'un motif a partir du transfert par espaceurs latéraux Expired - Fee Related FR2968122B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1004655A FR2968122B1 (fr) 2010-11-30 2010-11-30 Procédé de réalisation amélioré d'un motif a partir du transfert par espaceurs latéraux
US13/301,251 US8669188B2 (en) 2010-11-30 2011-11-21 Method for making a pattern from sidewall image transfer
SG2011086600A SG181266A1 (en) 2010-11-30 2011-11-22 Improved method for making a pattern from sidewall image transfer
TW100143525A TWI529777B (en) 2010-11-30 2011-11-28 Improved method for making a pattern from sidewall image transfer
EP11354071.0A EP2458621B1 (fr) 2010-11-30 2011-11-29 Procédé de réalisation amélioré d'un motif à partir du transfert par espaceurs latéraux
KR1020110126366A KR101881594B1 (ko) 2010-11-30 2011-11-29 측벽 이미지 트랜스퍼로부터 패턴을 제조하기 위한 향상된 방법
JP2011260794A JP5959833B2 (ja) 2010-11-30 2011-11-29 側壁イメージ転写からパターンを作る改善された方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1004655A FR2968122B1 (fr) 2010-11-30 2010-11-30 Procédé de réalisation amélioré d'un motif a partir du transfert par espaceurs latéraux

Publications (2)

Publication Number Publication Date
FR2968122A1 FR2968122A1 (fr) 2012-06-01
FR2968122B1 true FR2968122B1 (fr) 2012-12-07

Family

ID=44276342

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1004655A Expired - Fee Related FR2968122B1 (fr) 2010-11-30 2010-11-30 Procédé de réalisation amélioré d'un motif a partir du transfert par espaceurs latéraux

Country Status (7)

Country Link
US (1) US8669188B2 (enExample)
EP (1) EP2458621B1 (enExample)
JP (1) JP5959833B2 (enExample)
KR (1) KR101881594B1 (enExample)
FR (1) FR2968122B1 (enExample)
SG (1) SG181266A1 (enExample)
TW (1) TWI529777B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2990794B1 (fr) * 2012-05-16 2016-11-18 Commissariat Energie Atomique Procede de realisation d'un substrat muni de zones actives variees et de transistors planaires et tridimensionnels
US8735296B2 (en) * 2012-07-18 2014-05-27 International Business Machines Corporation Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer
US8716133B2 (en) * 2012-08-23 2014-05-06 International Business Machines Corporation Three photomask sidewall image transfer method
US9040371B2 (en) 2013-08-07 2015-05-26 International Business Machines Corporation Integration of dense and variable pitch fin structures
US9293345B2 (en) 2013-08-16 2016-03-22 Globalfoundries Inc. Sidewall image transfer with a spin-on hardmask
US9064901B1 (en) 2013-12-23 2015-06-23 International Business Machines Corporation Fin density control of multigate devices through sidewall image transfer processes
US9252243B2 (en) 2014-02-07 2016-02-02 International Business Machines Corporation Gate structure integration scheme for fin field effect transistors
CN106373880B (zh) * 2015-07-22 2021-05-25 联华电子股份有限公司 半导体元件及其形成方法
CN112768351B (zh) * 2019-11-06 2022-06-10 长鑫存储技术有限公司 一种图形形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7151040B2 (en) * 2004-08-31 2006-12-19 Micron Technology, Inc. Methods for increasing photo alignment margins
US7615445B2 (en) * 2006-09-21 2009-11-10 Sandisk Corporation Methods of reducing coupling between floating gates in nonvolatile memory
US7479429B2 (en) * 2007-01-31 2009-01-20 Freescale Semiconductor, Inc. Split game memory cell method
KR100966976B1 (ko) * 2007-12-28 2010-06-30 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US9330934B2 (en) * 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates

Also Published As

Publication number Publication date
KR101881594B1 (ko) 2018-07-24
EP2458621A1 (fr) 2012-05-30
TW201222627A (en) 2012-06-01
KR20120059426A (ko) 2012-06-08
FR2968122A1 (fr) 2012-06-01
JP5959833B2 (ja) 2016-08-02
EP2458621B1 (fr) 2015-02-25
SG181266A1 (en) 2012-06-28
US20120132616A1 (en) 2012-05-31
JP2012138570A (ja) 2012-07-19
TWI529777B (en) 2016-04-11
US8669188B2 (en) 2014-03-11

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Year of fee payment: 6

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Effective date: 20170731