TWI529777B - Improved method for making a pattern from sidewall image transfer - Google Patents
Improved method for making a pattern from sidewall image transferInfo
- Publication number
- TWI529777B TWI529777B TW100143525A TW100143525A TWI529777B TW I529777 B TWI529777 B TW I529777B TW 100143525 A TW100143525 A TW 100143525A TW 100143525 A TW100143525 A TW 100143525A TW I529777 B TWI529777 B TW I529777B
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- making
- improved method
- image transfer
- sidewall image
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1004655A FR2968122B1 (fr) | 2010-11-30 | 2010-11-30 | Procédé de réalisation amélioré d'un motif a partir du transfert par espaceurs latéraux |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201222627A TW201222627A (en) | 2012-06-01 |
| TWI529777B true TWI529777B (en) | 2016-04-11 |
Family
ID=44276342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100143525A TWI529777B (en) | 2010-11-30 | 2011-11-28 | Improved method for making a pattern from sidewall image transfer |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8669188B2 (enExample) |
| EP (1) | EP2458621B1 (enExample) |
| JP (1) | JP5959833B2 (enExample) |
| KR (1) | KR101881594B1 (enExample) |
| FR (1) | FR2968122B1 (enExample) |
| SG (1) | SG181266A1 (enExample) |
| TW (1) | TWI529777B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2990794B1 (fr) * | 2012-05-16 | 2016-11-18 | Commissariat Energie Atomique | Procede de realisation d'un substrat muni de zones actives variees et de transistors planaires et tridimensionnels |
| US8735296B2 (en) * | 2012-07-18 | 2014-05-27 | International Business Machines Corporation | Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer |
| US8716133B2 (en) * | 2012-08-23 | 2014-05-06 | International Business Machines Corporation | Three photomask sidewall image transfer method |
| US9040371B2 (en) | 2013-08-07 | 2015-05-26 | International Business Machines Corporation | Integration of dense and variable pitch fin structures |
| US9293345B2 (en) | 2013-08-16 | 2016-03-22 | Globalfoundries Inc. | Sidewall image transfer with a spin-on hardmask |
| US9064901B1 (en) | 2013-12-23 | 2015-06-23 | International Business Machines Corporation | Fin density control of multigate devices through sidewall image transfer processes |
| US9252243B2 (en) | 2014-02-07 | 2016-02-02 | International Business Machines Corporation | Gate structure integration scheme for fin field effect transistors |
| CN106373880B (zh) * | 2015-07-22 | 2021-05-25 | 联华电子股份有限公司 | 半导体元件及其形成方法 |
| CN112768351B (zh) * | 2019-11-06 | 2022-06-10 | 长鑫存储技术有限公司 | 一种图形形成方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7151040B2 (en) * | 2004-08-31 | 2006-12-19 | Micron Technology, Inc. | Methods for increasing photo alignment margins |
| US7615445B2 (en) * | 2006-09-21 | 2009-11-10 | Sandisk Corporation | Methods of reducing coupling between floating gates in nonvolatile memory |
| US7479429B2 (en) * | 2007-01-31 | 2009-01-20 | Freescale Semiconductor, Inc. | Split game memory cell method |
| KR100966976B1 (ko) * | 2007-12-28 | 2010-06-30 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| US9330934B2 (en) * | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
-
2010
- 2010-11-30 FR FR1004655A patent/FR2968122B1/fr not_active Expired - Fee Related
-
2011
- 2011-11-21 US US13/301,251 patent/US8669188B2/en active Active
- 2011-11-22 SG SG2011086600A patent/SG181266A1/en unknown
- 2011-11-28 TW TW100143525A patent/TWI529777B/zh not_active IP Right Cessation
- 2011-11-29 EP EP11354071.0A patent/EP2458621B1/fr not_active Not-in-force
- 2011-11-29 JP JP2011260794A patent/JP5959833B2/ja not_active Expired - Fee Related
- 2011-11-29 KR KR1020110126366A patent/KR101881594B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2968122B1 (fr) | 2012-12-07 |
| KR101881594B1 (ko) | 2018-07-24 |
| EP2458621A1 (fr) | 2012-05-30 |
| TW201222627A (en) | 2012-06-01 |
| KR20120059426A (ko) | 2012-06-08 |
| FR2968122A1 (fr) | 2012-06-01 |
| JP5959833B2 (ja) | 2016-08-02 |
| EP2458621B1 (fr) | 2015-02-25 |
| SG181266A1 (en) | 2012-06-28 |
| US20120132616A1 (en) | 2012-05-31 |
| JP2012138570A (ja) | 2012-07-19 |
| US8669188B2 (en) | 2014-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |