JP5957546B2 - 導電性組成物 - Google Patents

導電性組成物 Download PDF

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Publication number
JP5957546B2
JP5957546B2 JP2015001855A JP2015001855A JP5957546B2 JP 5957546 B2 JP5957546 B2 JP 5957546B2 JP 2015001855 A JP2015001855 A JP 2015001855A JP 2015001855 A JP2015001855 A JP 2015001855A JP 5957546 B2 JP5957546 B2 JP 5957546B2
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Japan
Prior art keywords
electrode
mass
conductive composition
silicone resin
conductive
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Active
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JP2015001855A
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English (en)
Japanese (ja)
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JP2016127212A (ja
Inventor
佑一朗 佐合
佑一朗 佐合
智久 小池
智久 小池
高啓 杉山
高啓 杉山
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Noritake Co Ltd
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Noritake Co Ltd
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Publication date
Application filed by Noritake Co Ltd filed Critical Noritake Co Ltd
Priority to JP2015001855A priority Critical patent/JP5957546B2/ja
Priority to CN201680005302.5A priority patent/CN107210325A/zh
Priority to PCT/JP2016/050161 priority patent/WO2016111299A1/ja
Priority to CN202110405333.2A priority patent/CN113178495A/zh
Priority to TW105100219A priority patent/TWI673726B/zh
Publication of JP2016127212A publication Critical patent/JP2016127212A/ja
Application granted granted Critical
Publication of JP5957546B2 publication Critical patent/JP5957546B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/40—Glass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
JP2015001855A 2015-01-07 2015-01-07 導電性組成物 Active JP5957546B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015001855A JP5957546B2 (ja) 2015-01-07 2015-01-07 導電性組成物
CN201680005302.5A CN107210325A (zh) 2015-01-07 2016-01-05 导电性组合物、半导体元件及太阳能电池元件
PCT/JP2016/050161 WO2016111299A1 (ja) 2015-01-07 2016-01-05 導電性組成物、半導体素子および太陽電池素子
CN202110405333.2A CN113178495A (zh) 2015-01-07 2016-01-05 导电性组合物、半导体元件及太阳能电池元件
TW105100219A TWI673726B (zh) 2015-01-07 2016-01-06 導電性組成物、半導體元件與太陽電池元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015001855A JP5957546B2 (ja) 2015-01-07 2015-01-07 導電性組成物

Publications (2)

Publication Number Publication Date
JP2016127212A JP2016127212A (ja) 2016-07-11
JP5957546B2 true JP5957546B2 (ja) 2016-07-27

Family

ID=56355986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015001855A Active JP5957546B2 (ja) 2015-01-07 2015-01-07 導電性組成物

Country Status (4)

Country Link
JP (1) JP5957546B2 (zh)
CN (2) CN113178495A (zh)
TW (1) TWI673726B (zh)
WO (1) WO2016111299A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10403770B2 (en) 2015-02-04 2019-09-03 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US10593439B2 (en) 2016-10-21 2020-03-17 Dupont Electronics, Inc. Conductive paste composition and semiconductor devices made therewith
US10741300B2 (en) 2016-10-07 2020-08-11 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101930286B1 (ko) * 2016-10-31 2019-03-12 엘에스니꼬동제련 주식회사 태양전지 전극용 도전성 페이스트 및 이를 사용하여 제조된 태양전지
KR101930284B1 (ko) * 2016-11-01 2018-12-19 엘에스니꼬동제련 주식회사 태양전지 전극용 도전성 페이스트 및 이를 사용하여 제조된 태양전지
JP6762848B2 (ja) * 2016-11-02 2020-09-30 東洋アルミニウム株式会社 ペースト組成物
KR102152842B1 (ko) * 2018-11-30 2020-09-07 엘에스니꼬동제련 주식회사 요변성 및 슬립성이 향상된 태양전지 전극용 도전성 페이스트 제조방법
CN112509727B (zh) * 2020-11-10 2022-08-12 广东工业大学 一种用于低温共烧陶瓷的内电极铜浆及其制备方法和应用
CN114283963B (zh) * 2021-12-20 2023-05-26 江苏索特电子材料有限公司 导电浆料组合物及其制备方法和应用、晶硅太阳能电池
CN114538916A (zh) * 2022-03-03 2022-05-27 太原理工大学 一种低温共烧陶瓷介质材料及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040055635A1 (en) * 2002-09-19 2004-03-25 Hiroshi Nagakubo Conductive paste, method for manufacturing solar battery, and solar battery
JP5309440B2 (ja) * 2005-11-15 2013-10-09 三菱マテリアル株式会社 太陽電池の電極形成用組成物及び該電極の形成方法並びに該形成方法により得られた電極を用いた太陽電池の製造方法
JP4847154B2 (ja) * 2006-02-24 2011-12-28 三洋電機株式会社 導電性ペースト組成物及びそのペースト組成物を用いた太陽電池セル、並びにそのセルを用いた太陽電池モジュール
US20090266409A1 (en) * 2008-04-28 2009-10-29 E.I.Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
JP4691211B2 (ja) * 2009-07-01 2011-06-01 積水化学工業株式会社 導電性ペースト用バインダー樹脂、導電性ペースト及び太陽電池素子
CN101609847B (zh) * 2009-07-08 2011-05-18 西安交通大学苏州研究院 太阳能电池电极形成用浆料
CN102687205B (zh) * 2009-11-16 2014-05-07 贺利氏北美肯肖霍肯贵金属材料有限责任公司 导电浆料组合物
CN102117844A (zh) * 2009-12-30 2011-07-06 比亚迪股份有限公司 太阳电池正面电极浆料及太阳电池正面电极的制备方法
JP2012023095A (ja) * 2010-07-12 2012-02-02 Yokohama Rubber Co Ltd:The 導電性組成物および太陽電池セル
KR101181190B1 (ko) * 2010-07-30 2012-09-18 엘지이노텍 주식회사 태양 전지 및 이의 후면 전극용 페이스트 조성물
WO2013089128A1 (ja) * 2011-12-16 2013-06-20 株式会社村田製作所 導電性組成物、多層セラミック基板およびその製造方法
JP6027765B2 (ja) * 2012-05-02 2016-11-16 株式会社ノリタケカンパニーリミテド 太陽電池用無鉛導電性ペースト組成物
JP5321723B1 (ja) * 2012-10-29 2013-10-23 横浜ゴム株式会社 導電性組成物および太陽電池セル
JP6060661B2 (ja) * 2012-12-07 2017-01-18 富士通株式会社 音抽出装置、音抽出方法、および音抽出プログラム
JPWO2014103896A1 (ja) * 2012-12-25 2017-01-12 株式会社ノリタケカンパニーリミテド 電極形成用ペースト
CN103531265B (zh) * 2013-10-18 2014-12-03 南通天盛新能源科技有限公司 晶体硅太阳能电池背场局域接触铝浆及其制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10403770B2 (en) 2015-02-04 2019-09-03 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US10741300B2 (en) 2016-10-07 2020-08-11 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US10593439B2 (en) 2016-10-21 2020-03-17 Dupont Electronics, Inc. Conductive paste composition and semiconductor devices made therewith
US10825575B2 (en) 2016-10-21 2020-11-03 Dupont Electronics, Inc. Conductive paste composition and semiconductor devices made therewith

Also Published As

Publication number Publication date
TWI673726B (zh) 2019-10-01
CN113178495A (zh) 2021-07-27
CN107210325A (zh) 2017-09-26
JP2016127212A (ja) 2016-07-11
TW201626404A (zh) 2016-07-16
WO2016111299A1 (ja) 2016-07-14

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