JP5949411B2 - 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 - Google Patents

補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 Download PDF

Info

Publication number
JP5949411B2
JP5949411B2 JP2012222460A JP2012222460A JP5949411B2 JP 5949411 B2 JP5949411 B2 JP 5949411B2 JP 2012222460 A JP2012222460 A JP 2012222460A JP 2012222460 A JP2012222460 A JP 2012222460A JP 5949411 B2 JP5949411 B2 JP 5949411B2
Authority
JP
Japan
Prior art keywords
pulse
time constant
peak value
current
waveform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012222460A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014075492A (ja
JP2014075492A5 (enExample
Inventor
前田　修
修 前田
大尾　桂久
桂久 大尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012222460A priority Critical patent/JP5949411B2/ja
Priority to US14/030,345 priority patent/US9136670B2/en
Priority to CN201310446673.5A priority patent/CN103715602B/zh
Publication of JP2014075492A publication Critical patent/JP2014075492A/ja
Publication of JP2014075492A5 publication Critical patent/JP2014075492A5/ja
Application granted granted Critical
Publication of JP5949411B2 publication Critical patent/JP5949411B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06812—Stabilisation of laser output parameters by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2012222460A 2012-10-04 2012-10-04 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 Active JP5949411B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012222460A JP5949411B2 (ja) 2012-10-04 2012-10-04 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
US14/030,345 US9136670B2 (en) 2012-10-04 2013-09-18 Correction circuit, drive circuit, light emission unit, and method of correcting current pulse waveform
CN201310446673.5A CN103715602B (zh) 2012-10-04 2013-09-25 校正电路、驱动电路、发光单元和电流脉冲波形校正方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012222460A JP5949411B2 (ja) 2012-10-04 2012-10-04 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法

Publications (3)

Publication Number Publication Date
JP2014075492A JP2014075492A (ja) 2014-04-24
JP2014075492A5 JP2014075492A5 (enExample) 2015-04-09
JP5949411B2 true JP5949411B2 (ja) 2016-07-06

Family

ID=50408349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012222460A Active JP5949411B2 (ja) 2012-10-04 2012-10-04 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法

Country Status (3)

Country Link
US (1) US9136670B2 (enExample)
JP (1) JP5949411B2 (enExample)
CN (1) CN103715602B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016096647A1 (en) * 2014-12-19 2016-06-23 Koninklijke Philips N.V. Laser sensor module
JP6918014B2 (ja) * 2016-11-28 2021-08-11 ソニーセミコンダクタソリューションズ株式会社 駆動装置および発光装置
WO2020100572A1 (ja) * 2018-11-16 2020-05-22 ソニーセミコンダクタソリューションズ株式会社 面発光レーザの駆動方法および面発光レーザ装置
JP7739899B2 (ja) * 2021-09-27 2025-09-17 富士フイルムビジネスイノベーション株式会社 発光装置および検出装置
DE102021130538A1 (de) * 2021-11-22 2023-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur überwachung der übergangstemperatur und optoelektronische vorrichtung
CN114356131B (zh) * 2021-12-20 2024-06-04 深圳市汇顶科技股份有限公司 驱动电路及相关电子装置
WO2023198866A1 (en) * 2022-04-14 2023-10-19 Ams-Osram International Gmbh Transition temperature monitoring method and optoelectronic laser device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378795A (en) * 1976-12-23 1978-07-12 Fujitsu Ltd Driver circuit of luminous element
JPS55137740A (en) * 1979-04-16 1980-10-27 Nippon Telegr & Teleph Corp <Ntt> Light analogue signal modulation system
JPS58225679A (ja) * 1982-06-23 1983-12-27 Nec Corp 半導体レ−ザ
JPH0821746B2 (ja) * 1986-12-08 1996-03-04 株式会社リコー 半導体レ−ザ駆動回路
JPH0330376A (ja) * 1989-06-27 1991-02-08 Sony Corp 発光ダイオード駆動回路
JP3293968B2 (ja) * 1993-08-24 2002-06-17 株式会社東芝 半導体レーザ装置
US7850083B2 (en) * 1999-12-24 2010-12-14 Jorge Sanchez-Olea Digital control system for an electro-optical device
DE10063707A1 (de) * 2000-12-20 2002-07-04 Heidelberger Druckmasch Ag Verfahren zur thermischen Stabilisierung einer Laserdiode in einem Recorder
US6807206B2 (en) * 2001-04-16 2004-10-19 The Furukawa Electric Co., Ltd. Semiconductor laser device and drive control method for a semiconductor laser device
JP3908971B2 (ja) * 2001-10-11 2007-04-25 浜松ホトニクス株式会社 発光素子駆動回路
JP2007158092A (ja) * 2005-12-06 2007-06-21 Sony Corp レーザ発光装置およびレーザ駆動方法
JP4924144B2 (ja) * 2007-03-29 2012-04-25 日本電気株式会社 光通信モジュール及び半導体レーザ出力制御方法
JP2008306118A (ja) 2007-06-11 2008-12-18 Sony Corp 面発光型半導体レーザ
JP4341708B2 (ja) * 2007-08-13 2009-10-07 オムロン株式会社 半導体レーザ駆動装置、半導体レーザ駆動方法、光送信装置、光配線モジュール、および電子機器
JP5659476B2 (ja) * 2009-09-25 2015-01-28 ソニー株式会社 補正回路、駆動回路および発光装置
JP5651983B2 (ja) * 2010-03-31 2015-01-14 ソニー株式会社 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP5717402B2 (ja) * 2010-11-04 2015-05-13 キヤノン株式会社 画像形成装置
JP5791282B2 (ja) * 2011-01-20 2015-10-07 キヤノン株式会社 画像形成装置

Also Published As

Publication number Publication date
CN103715602A (zh) 2014-04-09
JP2014075492A (ja) 2014-04-24
US20140105234A1 (en) 2014-04-17
CN103715602B (zh) 2017-11-24
US9136670B2 (en) 2015-09-15

Similar Documents

Publication Publication Date Title
JP5949411B2 (ja) 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP5651983B2 (ja) 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
KR101253396B1 (ko) 면 발광 레이저 소자, 면 발광 레이저 어레이, 광 주사 장치, 및 화상 형성 장치
JP5659476B2 (ja) 補正回路、駆動回路および発光装置
JP2012209501A (ja) 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
US20240085534A1 (en) Light emitting device, ranging device and movable object
JP6328876B2 (ja) 駆動装置および発光装置
US7873092B2 (en) Laser diode
EP2401794B1 (en) Output power stabilization for laser diodes using the photon-cooling dependent laser voltage
JP5533154B2 (ja) 半導体発光装置
WO2020100572A1 (ja) 面発光レーザの駆動方法および面発光レーザ装置
KR20240031418A (ko) 면 발광 레이저, 레이저 디바이스, 검출 디바이스, 이동체 및 면 발광 레이저 구동 방법
JP2024135973A (ja) 面発光レーザ、レーザ装置、検出装置、移動体、情報端末機器及び面発光レーザの駆動方法
JP2024058613A (ja) 面発光レーザ、レーザ装置、検出装置、移動体及び面発光レーザの駆動方法
KR20240011783A (ko) 면 발광 레이저, 레이저 디바이스, 검출 디바이스, 이동 대상체 및 면 발광 레이저 구동 방법
JP2024121668A (ja) 面発光レーザ、レーザ装置、検出装置、移動体及び面発光レーザの駆動方法
US20140022326A1 (en) Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device
US20130188993A1 (en) Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device
JP2023020850A (ja) 面発光レーザ、レーザ装置、検出装置、移動体及び面発光レーザの駆動方法
CN117795793A (zh) 表面发射激光器，激光装置，检测装置，移动体，以及表面发射激光器驱动方法
JP2015133426A (ja) 面発光レーザ素子

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150220

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160112

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160210

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160523

R151 Written notification of patent or utility model registration

Ref document number: 5949411

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250