JP5946227B2 - 電力送達システム、電力制御システム、および、電力を送達するまたは電力制御する方法 - Google Patents

電力送達システム、電力制御システム、および、電力を送達するまたは電力制御する方法 Download PDF

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JP5946227B2
JP5946227B2 JP2013547731A JP2013547731A JP5946227B2 JP 5946227 B2 JP5946227 B2 JP 5946227B2 JP 2013547731 A JP2013547731 A JP 2013547731A JP 2013547731 A JP2013547731 A JP 2013547731A JP 5946227 B2 JP5946227 B2 JP 5946227B2
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generator
power
matching network
sensor
local controller
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JP2014508378A (ja
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トーマス ジョエル ブラックバーン，
トーマス ジョエル ブラックバーン，
トーマス マッキンタイアー，
トーマス マッキンタイアー，
フェルナンド グスターボ トマセル，
フェルナンド グスターボ トマセル，
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Advanced Energy Industries Inc
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Advanced Energy Industries Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/40—Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2013547731A 2011-01-04 2012-01-04 電力送達システム、電力制御システム、および、電力を送達するまたは電力制御する方法 Active JP5946227B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161429472P 2011-01-04 2011-01-04
US61/429,472 2011-01-04
PCT/US2012/020219 WO2012094416A1 (en) 2011-01-04 2012-01-04 System level power delivery to a plasma processing load

Related Child Applications (1)

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JP2016053392A Division JP6141478B2 (ja) 2011-01-04 2016-03-17 プラズマ処理負荷へのシステムレベルの電力送達

Publications (2)

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JP2014508378A JP2014508378A (ja) 2014-04-03
JP5946227B2 true JP5946227B2 (ja) 2016-07-05

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JP2013547731A Active JP5946227B2 (ja) 2011-01-04 2012-01-04 電力送達システム、電力制御システム、および、電力を送達するまたは電力制御する方法
JP2016053392A Active JP6141478B2 (ja) 2011-01-04 2016-03-17 プラズマ処理負荷へのシステムレベルの電力送達
JP2017091857A Active JP6425765B2 (ja) 2011-01-04 2017-05-02 プラズマ処理負荷へのシステムレベルの電力送達

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JP2016053392A Active JP6141478B2 (ja) 2011-01-04 2016-03-17 プラズマ処理負荷へのシステムレベルの電力送達
JP2017091857A Active JP6425765B2 (ja) 2011-01-04 2017-05-02 プラズマ処理負荷へのシステムレベルの電力送達

Country Status (4)

Country Link
US (2) US9088267B2 (enrdf_load_stackoverflow)
JP (3) JP5946227B2 (enrdf_load_stackoverflow)
KR (1) KR101675625B1 (enrdf_load_stackoverflow)
WO (1) WO2012094416A1 (enrdf_load_stackoverflow)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009082814A1 (en) * 2007-12-31 2009-07-09 Ray Ganong Method, system, and computer program for identification and sharing of digital images with face signatures
KR101675625B1 (ko) * 2011-01-04 2016-11-22 어드밴스드 에너지 인더스트리즈 인코포레이티드 플라즈마 처리 부하에 대한 시스템 레벨 전원 공급
KR101303040B1 (ko) * 2012-02-28 2013-09-03 주식회사 뉴파워 프라즈마 플라즈마 챔버의 아크 검출 방법 및 장치
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP6113450B2 (ja) * 2012-09-07 2017-04-12 株式会社ダイヘン インピーダンス調整装置
JP6084417B2 (ja) 2012-09-28 2017-02-22 株式会社ダイヘン インピーダンス調整装置
CN103730316B (zh) * 2012-10-16 2016-04-06 中微半导体设备(上海)有限公司 一种等离子处理方法及等离子处理装置
US8736377B2 (en) * 2012-10-30 2014-05-27 Mks Instruments, Inc. RF pulse edge shaping
US9620334B2 (en) * 2012-12-17 2017-04-11 Lam Research Corporation Control of etch rate using modeling, feedback and impedance match
US9536713B2 (en) * 2013-02-27 2017-01-03 Advanced Energy Industries, Inc. Reliable plasma ignition and reignition
US10821542B2 (en) 2013-03-15 2020-11-03 Mks Instruments, Inc. Pulse synchronization by monitoring power in another frequency band
US9854659B2 (en) * 2014-10-16 2017-12-26 Advanced Energy Industries, Inc. Noise based frequency tuning and identification of plasma characteristics
EP3091559A1 (en) 2015-05-05 2016-11-09 TRUMPF Huettinger Sp. Z o. o. Plasma impedance matching unit, system for supplying rf power to a plasma load, and method of supplying rf power to a plasma load
US9721758B2 (en) * 2015-07-13 2017-08-01 Mks Instruments, Inc. Unified RF power delivery single input, multiple output control for continuous and pulse mode operation
KR101777762B1 (ko) * 2015-09-03 2017-09-12 에이피시스템 주식회사 고주파 전원 공급장치 및 이를 포함하는 기판 처리장치
US9577516B1 (en) * 2016-02-18 2017-02-21 Advanced Energy Industries, Inc. Apparatus for controlled overshoot in a RF generator
JP6157036B1 (ja) * 2016-07-08 2017-07-05 株式会社京三製作所 高周波電源装置、及び高周波電源装置の制御方法
JP2017073770A (ja) * 2016-09-30 2017-04-13 株式会社ダイヘン 高周波整合システム
JP2017073772A (ja) * 2016-09-30 2017-04-13 株式会社ダイヘン 高周波整合システム
JP6463786B2 (ja) * 2017-01-25 2019-02-06 株式会社ダイヘン 高周波整合システムのインピーダンス調整方法
US10879044B2 (en) * 2017-04-07 2020-12-29 Lam Research Corporation Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing
US11651939B2 (en) * 2017-07-07 2023-05-16 Advanced Energy Industries, Inc. Inter-period control system for plasma power delivery system and method of operating same
WO2019010312A1 (en) * 2017-07-07 2019-01-10 Advanced Energy Industries, Inc. INTER-PERIODIC CONTROL SYSTEM FOR PLASMA POWER SUPPLY SYSTEM AND METHOD OF OPERATION
US11615943B2 (en) * 2017-07-07 2023-03-28 Advanced Energy Industries, Inc. Inter-period control for passive power distribution of multiple electrode inductive plasma source
US10679825B2 (en) * 2017-11-15 2020-06-09 Lam Research Corporation Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate
TWI744566B (zh) 2017-11-17 2021-11-01 新加坡商Ａｅｓ全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
US12288673B2 (en) 2017-11-29 2025-04-29 COMET Technologies USA, Inc. Retuning for impedance matching network control
US11290080B2 (en) 2017-11-29 2022-03-29 COMET Technologies USA, Inc. Retuning for impedance matching network control
US10553400B2 (en) * 2018-03-30 2020-02-04 Applied Materials, Inc. Methods and apparatus for frequency generator and match network communication
US10916409B2 (en) * 2018-06-18 2021-02-09 Lam Research Corporation Active control of radial etch uniformity
US11804362B2 (en) 2018-12-21 2023-10-31 Advanced Energy Industries, Inc. Frequency tuning for modulated plasma systems
KR102763163B1 (ko) * 2019-04-29 2025-02-07 삼성전자주식회사 Rf 파워 모니터링 장치, 및 그 장치를 포함하는 pe 시스템
CN114041201B (zh) 2019-04-29 2024-12-06 朗姆研究公司 用于rf等离子体工具中的多级脉冲的系统和方法
US11114279B2 (en) 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
US11527385B2 (en) 2021-04-29 2022-12-13 COMET Technologies USA, Inc. Systems and methods for calibrating capacitors of matching networks
US11107661B2 (en) 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology
US11596309B2 (en) 2019-07-09 2023-03-07 COMET Technologies USA, Inc. Hybrid matching network topology
WO2021040707A1 (en) 2019-08-28 2021-03-04 Applied Materials, Inc. Methods of tuning to improve plasma stability
KR20220053547A (ko) 2019-08-28 2022-04-29 코멧 테크놀로지스 유에스에이, 인크. 고전력 저주파 코일들
US11670488B2 (en) 2020-01-10 2023-06-06 COMET Technologies USA, Inc. Fast arc detecting match network
US11830708B2 (en) 2020-01-10 2023-11-28 COMET Technologies USA, Inc. Inductive broad-band sensors for electromagnetic waves
US11887820B2 (en) 2020-01-10 2024-01-30 COMET Technologies USA, Inc. Sector shunts for plasma-based wafer processing systems
US12027351B2 (en) 2020-01-10 2024-07-02 COMET Technologies USA, Inc. Plasma non-uniformity detection
US11521832B2 (en) 2020-01-10 2022-12-06 COMET Technologies USA, Inc. Uniformity control for radio frequency plasma processing systems
US11605527B2 (en) 2020-01-20 2023-03-14 COMET Technologies USA, Inc. Pulsing control match network
US11961711B2 (en) 2020-01-20 2024-04-16 COMET Technologies USA, Inc. Radio frequency match network and generator
WO2021257374A1 (en) * 2020-06-17 2021-12-23 Lam Research Corporation Protection system for switches in direct drive circuits of substrate processing systems
US11373844B2 (en) 2020-09-28 2022-06-28 COMET Technologies USA, Inc. Systems and methods for repetitive tuning of matching networks
KR20220067554A (ko) * 2020-11-16 2022-05-25 세메스 주식회사 기판 처리 장치 및 임피던스 정합 방법
US12057296B2 (en) 2021-02-22 2024-08-06 COMET Technologies USA, Inc. Electromagnetic field sensing device
US11961712B2 (en) 2021-04-26 2024-04-16 Advanced Energy Industries, Inc. Combining the determination of single and mutual, preset preserving, impedance loads with advances in single and double sensor calibration techniques in the application of single and pairwise calibration of sensors
US12020901B2 (en) * 2021-05-07 2024-06-25 Applied Materials, Inc. RF impedance matching networks for substrate processing platform
EP4105963A1 (en) * 2021-06-17 2022-12-21 Impedans Ltd A controller for a matching unit of a plasma processing system
EP4105962A1 (en) * 2021-06-17 2022-12-21 Impedans Ltd A controller for a matching unit of a plasma processing system
US11923175B2 (en) 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
WO2023167854A1 (en) * 2022-03-03 2023-09-07 COMET Technologies USA, Inc. Retuning for impedance matching network control
US12243717B2 (en) 2022-04-04 2025-03-04 COMET Technologies USA, Inc. Variable reactance device having isolated gate drive power supplies
DE102022108642A1 (de) * 2022-04-08 2023-10-12 TRUMPF Hüttinger GmbH + Co. KG Plasmazünderkennungsvorrichtung zum Anschluss an eine Impedanzanpassungsschaltung für ein Plasmaerzeugungssystem
US11657980B1 (en) 2022-05-09 2023-05-23 COMET Technologies USA, Inc. Dielectric fluid variable capacitor
US12040139B2 (en) 2022-05-09 2024-07-16 COMET Technologies USA, Inc. Variable capacitor with linear impedance and high voltage breakdown
US12051549B2 (en) 2022-08-02 2024-07-30 COMET Technologies USA, Inc. Coaxial variable capacitor
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US12132435B2 (en) 2022-10-27 2024-10-29 COMET Technologies USA, Inc. Method for repeatable stepper motor homing
KR20240138176A (ko) * 2023-03-10 2024-09-20 삼성전자주식회사 Rf 전력 제공 장치 및 그것의 동작 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3251087B2 (ja) * 1993-02-16 2002-01-28 東京エレクトロン株式会社 プラズマ処理装置
JP2929284B2 (ja) * 1997-09-10 1999-08-03 株式会社アドテック 高周波プラズマ処理装置のためのインピーダンス整合及び電力制御システム
JP4088499B2 (ja) * 2002-08-28 2008-05-21 株式会社ダイヘン インピーダンス整合器の出力端特性解析方法、およびインピーダンス整合器、ならびにインピーダンス整合器の出力端特性解析システム
US6703080B2 (en) * 2002-05-20 2004-03-09 Eni Technology, Inc. Method and apparatus for VHF plasma processing with load mismatch reliability and stability
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems
KR100877304B1 (ko) * 2003-11-27 2009-01-09 가부시키가이샤 다이헨 고주파 전력 공급 시스템
US7169256B2 (en) * 2004-05-28 2007-01-30 Lam Research Corporation Plasma processor with electrode responsive to multiple RF frequencies
JP4739793B2 (ja) * 2005-03-31 2011-08-03 株式会社ダイヘン 高周波電源装置
US20080179948A1 (en) * 2005-10-31 2008-07-31 Mks Instruments, Inc. Radio frequency power delivery system
EP1952533A1 (en) * 2005-10-31 2008-08-06 MKS Instruments, Inc. Radio frequency power delivery system
US7764140B2 (en) * 2005-10-31 2010-07-27 Mks Instruments, Inc. Radio frequency power delivery system
JP2007336148A (ja) * 2006-06-14 2007-12-27 Daihen Corp 電気特性調整装置
JP2007313432A (ja) 2006-05-25 2007-12-06 Nippon Kankyo Calcium Kenkyusho:Kk 廃棄物処分場を覆う盛土部における設備
JP2008157906A (ja) * 2006-12-25 2008-07-10 Adtec Plasma Technology Co Ltd 出力インピーダンス検出方法およびこの方法を用いたインピーダンスのセンサー、高周波電源につながる負荷側の電力モニターならびに高周波電源の制御装置
WO2009140371A2 (en) 2008-05-14 2009-11-19 Applied Materials, Inc. Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery
US8040068B2 (en) * 2009-02-05 2011-10-18 Mks Instruments, Inc. Radio frequency power control system
KR101675625B1 (ko) * 2011-01-04 2016-11-22 어드밴스드 에너지 인더스트리즈 인코포레이티드 플라즈마 처리 부하에 대한 시스템 레벨 전원 공급

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Publication number Publication date
KR20130133815A (ko) 2013-12-09
JP2016149366A (ja) 2016-08-18
JP6141478B2 (ja) 2017-06-07
KR101675625B1 (ko) 2016-11-22
US9088267B2 (en) 2015-07-21
JP6425765B2 (ja) 2018-11-21
US9478397B2 (en) 2016-10-25
WO2012094416A1 (en) 2012-07-12
JP2014508378A (ja) 2014-04-03
JP2017188464A (ja) 2017-10-12
US20130002136A1 (en) 2013-01-03
US20150279625A1 (en) 2015-10-01

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