JP5946112B2 - 基板加工方法 - Google Patents

基板加工方法 Download PDF

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Publication number
JP5946112B2
JP5946112B2 JP2011027612A JP2011027612A JP5946112B2 JP 5946112 B2 JP5946112 B2 JP 5946112B2 JP 2011027612 A JP2011027612 A JP 2011027612A JP 2011027612 A JP2011027612 A JP 2011027612A JP 5946112 B2 JP5946112 B2 JP 5946112B2
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Prior art keywords
substrate
processing method
modified layer
adhesive
substrate processing
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Japanese (ja)
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JP2012169363A (ja
JP2012169363A5 (enrdf_load_stackoverflow
Inventor
順一 池野
順一 池野
利香 松尾
利香 松尾
鈴木　秀樹
秀樹 鈴木
国司　洋介
洋介 国司
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Shin Etsu Polymer Co Ltd
Saitama University NUC
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Shin Etsu Polymer Co Ltd
Saitama University NUC
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Priority to JP2011027612A priority Critical patent/JP5946112B2/ja
Publication of JP2012169363A publication Critical patent/JP2012169363A/ja
Publication of JP2012169363A5 publication Critical patent/JP2012169363A5/ja
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2011027612A 2011-02-10 2011-02-10 基板加工方法 Active JP5946112B2 (ja)

Priority Applications (1)

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JP2011027612A JP5946112B2 (ja) 2011-02-10 2011-02-10 基板加工方法

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JP2011027612A JP5946112B2 (ja) 2011-02-10 2011-02-10 基板加工方法

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JP2012169363A JP2012169363A (ja) 2012-09-06
JP2012169363A5 JP2012169363A5 (enrdf_load_stackoverflow) 2014-03-27
JP5946112B2 true JP5946112B2 (ja) 2016-07-05

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JP (1) JP5946112B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6265522B2 (ja) * 2013-02-28 2018-01-24 国立大学法人埼玉大学 表面３次元構造部材の製造方法
KR101803790B1 (ko) 2013-04-18 2017-12-04 한화테크윈 주식회사 웨이퍼의 시닝 방법 및 장치
EP3178971A4 (en) 2014-08-08 2018-05-16 Sumitomo Electric Industries, Ltd. Method for manufacturing diamond, diamond, diamond composite substrate, diamond bonded substrate, and tool
JP6822146B2 (ja) 2015-01-16 2021-01-27 住友電気工業株式会社 半導体基板の製造方法及び複合半導体基板の製造方法
JP6552898B2 (ja) * 2015-07-13 2019-07-31 株式会社ディスコ 多結晶ＳｉＣウエーハの生成方法
WO2018235843A1 (ja) * 2017-06-19 2018-12-27 ローム株式会社 半導体装置の製造方法およびウエハ貼着構造体
JP7330695B2 (ja) * 2018-12-21 2023-08-22 浜松ホトニクス株式会社 レーザ加工方法、及び、半導体デバイス製造方法
CN112635309B (zh) * 2020-12-07 2024-07-12 福建晶安光电有限公司 衬底加工方法及利用该方法加工的衬底
CN113193078B (zh) * 2021-04-15 2023-04-25 山东交通学院 一种光伏电池片生产设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4128204B2 (ja) * 2000-09-13 2008-07-30 浜松ホトニクス株式会社 レーザ加工方法
JP2007194533A (ja) * 2006-01-23 2007-08-02 Okamoto Machine Tool Works Ltd 半導体基板の平坦化方法
JP2010021398A (ja) * 2008-07-11 2010-01-28 Disco Abrasive Syst Ltd ウェーハの処理方法
JP2010155259A (ja) * 2008-12-26 2010-07-15 Seiko Epson Corp 溝形成方法
JP5398332B2 (ja) * 2009-04-16 2014-01-29 信越ポリマー株式会社 半導体ウェーハの製造方法及びその装置
WO2012108055A1 (ja) * 2011-02-10 2012-08-16 信越ポリマー株式会社 単結晶基板製造方法および内部改質層形成単結晶部材

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