JP5943888B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5943888B2 JP5943888B2 JP2013176472A JP2013176472A JP5943888B2 JP 5943888 B2 JP5943888 B2 JP 5943888B2 JP 2013176472 A JP2013176472 A JP 2013176472A JP 2013176472 A JP2013176472 A JP 2013176472A JP 5943888 B2 JP5943888 B2 JP 5943888B2
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- interlayer insulating
- insulating film
- wafer
- semiconductor device
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Claims (5)
- 半導体を含むウェーハ上に少なくともシリコンと酸素とを含む層間絶縁膜を形成する第1のステップと、
前記層間絶縁膜の表面から前記ウェーハに向かう方向に延在するコンタクトホールを形成する第2のステップと、
前記コンタクトホールの内部にコンタクトプラグを形成する第3のステップと、
前記層間絶縁膜の上に前記コンタクトプラグに接続された配線を形成する第4のステップと、
前記層間絶縁膜にマイクロ波を照射し、前記第2のステップから前記第4のステップにおいて前記層間絶縁膜中に形成された前記シリコンの未結合手と、前記酸素の未結合手と、を結合させる第5のステップと、
を備えた半導体装置の製造方法。 - 前記マイクロ波は、水素濃度が0.01ppm以下の雰囲気中で照射される請求項1記載の半導体装置の製造方法。
- 前記マイクロ波は、ウェーハの温度を400℃以下に保持した状態で照射される請求項1または2に記載の半導体装置の製造方法。
- 前記ウェーハは、金属酸化物を含む半導体素子を有する請求項1〜3のいずれか1つに記載の半導体装置の製造方法。
- 前記第1のステップから前記第4のステップを少なくとも2回以上繰り返した後に、前記第5のステップを実施する請求項1〜4のいずれか1つに記載の半導体装置の製造方法。
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JP2013176472A JP5943888B2 (ja) | 2013-08-28 | 2013-08-28 | 半導体装置の製造方法 |
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JP2013176472A JP5943888B2 (ja) | 2013-08-28 | 2013-08-28 | 半導体装置の製造方法 |
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JP2015046469A JP2015046469A (ja) | 2015-03-12 |
JP5943888B2 true JP5943888B2 (ja) | 2016-07-05 |
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Families Citing this family (2)
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KR102013807B1 (ko) * | 2017-09-27 | 2019-08-23 | 한국과학기술원 | 자가 수리 가능한 전자 장치 및 이를 이용한 반도체 칩의 자가 수리 방법 |
KR20210021292A (ko) | 2018-04-27 | 2021-02-25 | 펨토매트릭스, 인코포레이티드. | 반도체 장치들의 특성들을 판단하는 시스템들 및 방법들 |
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EP2024532A4 (en) * | 2006-05-30 | 2014-08-06 | Applied Materials Inc | HIGH QUALITY SILICON DIOXIDE VAPOR PHASE CHEMICAL DEPOSITION FROM A PRECURSOR CONTAINING SILICON AND ATOMIC OXYGEN |
TWI366876B (en) * | 2006-05-30 | 2012-06-21 | Applied Materials Inc | A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide |
JP2009176808A (ja) * | 2008-01-22 | 2009-08-06 | Elpida Memory Inc | 半導体装置の製造方法 |
US8153348B2 (en) * | 2008-02-20 | 2012-04-10 | Applied Materials, Inc. | Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch |
JP5615207B2 (ja) * | 2011-03-03 | 2014-10-29 | 株式会社東芝 | 半導体装置の製造方法 |
JP2013073950A (ja) * | 2011-09-26 | 2013-04-22 | Toshiba Corp | 半導体装置の製造方法 |
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