JP5941653B2 - シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置 - Google Patents

シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置 Download PDF

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Publication number
JP5941653B2
JP5941653B2 JP2011233620A JP2011233620A JP5941653B2 JP 5941653 B2 JP5941653 B2 JP 5941653B2 JP 2011233620 A JP2011233620 A JP 2011233620A JP 2011233620 A JP2011233620 A JP 2011233620A JP 5941653 B2 JP5941653 B2 JP 5941653B2
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gas
plasma
silicon nitride
nitride film
processing
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Japanese (ja)
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JP2012188735A (ja
JP2012188735A5 (OSRAM
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拓 石川
拓 石川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2011233620A priority Critical patent/JP5941653B2/ja
Priority to CN2012800105318A priority patent/CN103403847A/zh
Priority to KR1020137022207A priority patent/KR101881470B1/ko
Priority to PCT/JP2012/052608 priority patent/WO2012114856A1/ja
Priority to TW101105934A priority patent/TWI533378B/zh
Publication of JP2012188735A publication Critical patent/JP2012188735A/ja
Publication of JP2012188735A5 publication Critical patent/JP2012188735A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2011233620A 2011-02-24 2011-10-25 シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置 Active JP5941653B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011233620A JP5941653B2 (ja) 2011-02-24 2011-10-25 シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置
CN2012800105318A CN103403847A (zh) 2011-02-24 2012-02-06 氮化硅膜的成膜方法、有机电子器件的制造方法和氮化硅膜的成膜装置
KR1020137022207A KR101881470B1 (ko) 2011-02-24 2012-02-06 실리콘 질화막의 성막 방법, 유기 전자 디바이스의 제조 방법 및 실리콘 질화막의 성막 장치
PCT/JP2012/052608 WO2012114856A1 (ja) 2011-02-24 2012-02-06 シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置
TW101105934A TWI533378B (zh) 2011-02-24 2012-02-23 A silicon nitride film forming method, and a silicon nitride film forming apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011038342 2011-02-24
JP2011038342 2011-02-24
JP2011233620A JP5941653B2 (ja) 2011-02-24 2011-10-25 シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置

Publications (3)

Publication Number Publication Date
JP2012188735A JP2012188735A (ja) 2012-10-04
JP2012188735A5 JP2012188735A5 (OSRAM) 2014-12-11
JP5941653B2 true JP5941653B2 (ja) 2016-06-29

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JP2011233620A Active JP5941653B2 (ja) 2011-02-24 2011-10-25 シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置

Country Status (5)

Country Link
JP (1) JP5941653B2 (OSRAM)
KR (1) KR101881470B1 (OSRAM)
CN (1) CN103403847A (OSRAM)
TW (1) TWI533378B (OSRAM)
WO (1) WO2012114856A1 (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014060378A (ja) * 2012-08-23 2014-04-03 Tokyo Electron Ltd シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置
US10559459B2 (en) 2016-03-11 2020-02-11 Taiyo Nippon Sanso Corporation Method for producing silicon nitride film and silicon nitride film
JP6613196B2 (ja) * 2016-03-31 2019-11-27 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネル
JP6742165B2 (ja) * 2016-06-14 2020-08-19 東京エレクトロン株式会社 窒化珪素膜の処理方法および窒化珪素膜の形成方法
US10454029B2 (en) * 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
JP6640160B2 (ja) * 2017-09-07 2020-02-05 東京エレクトロン株式会社 成膜装置及び成膜方法
GB201806865D0 (en) * 2018-04-26 2018-06-13 Spts Technologies Ltd Method of depositing a SiN film
US11239420B2 (en) 2018-08-24 2022-02-01 Lam Research Corporation Conformal damage-free encapsulation of chalcogenide materials
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
WO2022020528A1 (en) 2020-07-23 2022-01-27 Lam Research Corporation Conformal thermal cvd with controlled film properties and high deposition rate
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
US12473633B2 (en) 2021-07-09 2025-11-18 Lam Research Corporation Plasma enhanced atomic layer deposition of silicon-containing films

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
JP2003288983A (ja) 2002-01-24 2003-10-10 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法、及び製造装置
US7214600B2 (en) * 2004-06-25 2007-05-08 Applied Materials, Inc. Method to improve transmittance of an encapsulating film
JP4455381B2 (ja) * 2005-03-28 2010-04-21 住友電工デバイス・イノベーション株式会社 半導体装置およびその製造方法、容量素子およびその製造方法、並びにｍｉｓ型半導体装置およびその製造方法。
JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
JP2009076232A (ja) * 2007-09-19 2009-04-09 Fujifilm Corp 環境感受性デバイス、環境感受性素子の封止方法
JP2009187990A (ja) * 2008-02-01 2009-08-20 Tokyo Electron Ltd プラズマ処理装置
JP2009246130A (ja) * 2008-03-31 2009-10-22 Tokyo Electron Ltd 成膜装置、成膜方法及び半導体集積回路装置の製造方法
JP2010219112A (ja) 2009-03-13 2010-09-30 Tokyo Electron Ltd アモルファスハイドロカーボンナイトライド（ａ−ＣＮ：Ｈｘ）膜の成膜方法、有機ＥＬデバイスおよびその製造方法

Also Published As

Publication number Publication date
KR20140006907A (ko) 2014-01-16
TW201248729A (en) 2012-12-01
TWI533378B (zh) 2016-05-11
JP2012188735A (ja) 2012-10-04
WO2012114856A1 (ja) 2012-08-30
CN103403847A (zh) 2013-11-20
KR101881470B1 (ko) 2018-07-24

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