JP5941157B2 - インゴット成長装置 - Google Patents
インゴット成長装置 Download PDFInfo
- Publication number
- JP5941157B2 JP5941157B2 JP2014544662A JP2014544662A JP5941157B2 JP 5941157 B2 JP5941157 B2 JP 5941157B2 JP 2014544662 A JP2014544662 A JP 2014544662A JP 2014544662 A JP2014544662 A JP 2014544662A JP 5941157 B2 JP5941157 B2 JP 5941157B2
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- JP
- Japan
- Prior art keywords
- dopant
- silicon melt
- hole
- ingot
- providing unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002019 doping agent Substances 0.000 claims description 127
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 69
- 229910052710 silicon Inorganic materials 0.000 claims description 69
- 239000010703 silicon Substances 0.000 claims description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 28
- 239000013078 crystal Substances 0.000 description 17
- 239000010453 quartz Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000011109 contamination Methods 0.000 description 4
- 238000004880 explosion Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Description
ルツボにシリコン融液を用意し、石英を含むドーパント提供部にドーパント690gを用意した。以後、前記ドーパント提供部をシリコン融液に浸漬させてシリコン融液をドーピングさせた。
直方体状の種結晶にドーパント860gを付着させた。以後、前記ドーパントを前記シリコン融液に投入してシリコン融液をドーピングさせた。
Claims (8)
- シリコン融液が収容されるルツボと、
前記ルツボの上側に位置し、上下に移動可能な引き上げ機構と、
前記引き上げ機構に連結され、前記シリコン融液にドーパントを提供するためのドーパント提供部と、を含み、
前記ドーパント提供部は、
底面と側面を含む収容部と、
前記収容部の上側を選択的に閉鎖できる密閉部と、
前記収容部の底面に形成された複数の第1孔と、
前記収容部の側面に形成された複数の第2孔と、を含み、
前記ドーパントは、円筒形状または湾曲形状を有し、
前記ドーパントの上部面または下部面の大きさは、前記第1孔と第2孔の大きさより大きい形状を有するインゴット成長装置。 - 前記ドーパントの上部面または下部面の直径や長さは15mm〜20mmの範囲であり、前記ドーパントの高さは40mm〜50mmの範囲である請求項1に記載のインゴット成長装置。
- 前記収容部の底面に形成された複数の第1孔の面積は、前記底面の面積に対して40%〜80%の範囲である請求項1に記載のインゴット成長装置。
- 前記複数の第2孔の面積は、前記第1孔の面積より小さい請求項3に記載のインゴット成長装置。
- 前記第1孔の直径または長さは、第2孔の直径または長さより小さい請求項3に記載のインゴット成長装置。
- 前記第1孔の直径または長さは、5mm〜13mmの範囲である請求項3に記載のインゴット成長装置。
- 前記密閉部が前記収容部の上部面と選択的に締結されるための構造として、前記収容部の側面に形成された少なくとも一つ以上の突出部と、前記突出部に締結できるように、前記密閉部の側面に形成された締結溝とが形成される請求項1に記載のインゴット成長装置。
- 前記ドーパント提供部は、酸化ケイ素からなる請求項1に記載のインゴット成長装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110125492A KR101350114B1 (ko) | 2011-11-29 | 2011-11-29 | 잉곳 성장 장치 및 잉곳 성장 방법 |
KR10-2011-0125492 | 2011-11-29 | ||
PCT/KR2012/010187 WO2013081378A1 (ko) | 2011-11-29 | 2012-11-28 | 잉곳 성장 장치 및 잉곳 성장 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014534160A JP2014534160A (ja) | 2014-12-18 |
JP5941157B2 true JP5941157B2 (ja) | 2016-06-29 |
Family
ID=48535764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014544662A Active JP5941157B2 (ja) | 2011-11-29 | 2012-11-28 | インゴット成長装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20140331914A1 (ja) |
JP (1) | JP5941157B2 (ja) |
KR (1) | KR101350114B1 (ja) |
CN (1) | CN103958745A (ja) |
DE (1) | DE112012004967B4 (ja) |
WO (1) | WO2013081378A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101443489B1 (ko) * | 2013-01-23 | 2014-09-22 | 주식회사 엘지실트론 | 단결정 제조장비의 도펀트 주입장치 |
JP6569485B2 (ja) * | 2015-11-09 | 2019-09-04 | 株式会社Sumco | 原料のリチャージ又は単結晶引上げに用いられる蓋付容器 |
KR101725690B1 (ko) * | 2015-12-17 | 2017-04-10 | 주식회사 엘지실트론 | 단결정 성장장치 |
CN116200808A (zh) * | 2021-11-30 | 2023-06-02 | Tcl中环新能源科技股份有限公司 | 一种用于单晶硅合金补掺的工装及补掺方法 |
CN115449895A (zh) * | 2022-08-31 | 2022-12-09 | 双良硅材料(包头)有限公司 | 一种补掺母合金装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6294918A (ja) * | 1985-10-22 | 1987-05-01 | Mitsubishi Electric Corp | 薄膜形成装置 |
JPH0345587A (ja) * | 1989-07-14 | 1991-02-27 | Toshiba Corp | 半導体結晶棒の製造方法 |
JPH085737B2 (ja) * | 1990-10-17 | 1996-01-24 | コマツ電子金属株式会社 | 半導体単結晶製造装置 |
JPH04305089A (ja) * | 1991-04-02 | 1992-10-28 | Fujitsu Ltd | 半導体の製造方法及び装置 |
JPH0840794A (ja) * | 1994-08-03 | 1996-02-13 | Hitachi Ltd | 単結晶シリコン製造工程におけるリチャージ方法 |
US6179914B1 (en) * | 1999-02-02 | 2001-01-30 | Seh America, Inc. | Dopant delivery system and method |
DE10007179B4 (de) * | 2000-02-17 | 2004-08-19 | Siltronic Ag | Verfahren und Vorrichtung zum Dotieren einer Schmelze mit einem Dotierstoff |
WO2003027362A1 (en) | 2001-09-28 | 2003-04-03 | Memc Electronic Materials, Inc. | Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder |
KR100486877B1 (ko) * | 2002-10-15 | 2005-05-03 | 주식회사 실트론 | 저융점 도판트 주입관이 설치된 실리콘 단결정 성장 장치및 저융점 도판트 주입 방법 |
KR100509185B1 (ko) * | 2003-12-01 | 2005-08-17 | 주식회사 실트론 | 실리콘 단결정 성장장치의 저융점 도판트 주입장치 |
JP2006266813A (ja) * | 2005-03-23 | 2006-10-05 | Komatsu Electronic Metals Co Ltd | 融液採取治具及びこの融液採取治具を用いたインゴット製造装置 |
JP5074826B2 (ja) * | 2007-05-31 | 2012-11-14 | Sumco Techxiv株式会社 | ドーパントの注入方法、及びドーピング装置 |
-
2011
- 2011-11-29 KR KR1020110125492A patent/KR101350114B1/ko active IP Right Grant
-
2012
- 2012-11-28 DE DE112012004967.5T patent/DE112012004967B4/de active Active
- 2012-11-28 WO PCT/KR2012/010187 patent/WO2013081378A1/ko active Application Filing
- 2012-11-28 JP JP2014544662A patent/JP5941157B2/ja active Active
- 2012-11-28 CN CN201280058583.2A patent/CN103958745A/zh active Pending
- 2012-11-28 US US13/821,006 patent/US20140331914A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN103958745A (zh) | 2014-07-30 |
JP2014534160A (ja) | 2014-12-18 |
US20140331914A1 (en) | 2014-11-13 |
WO2013081378A1 (ko) | 2013-06-06 |
DE112012004967T5 (de) | 2014-08-21 |
KR101350114B1 (ko) | 2014-01-09 |
KR20130059491A (ko) | 2013-06-07 |
DE112012004967B4 (de) | 2017-03-23 |
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