JP5934745B2 - 発光ダイオードパッケージ及びその製造方法 - Google Patents
発光ダイオードパッケージ及びその製造方法 Download PDFInfo
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- JP5934745B2 JP5934745B2 JP2014114125A JP2014114125A JP5934745B2 JP 5934745 B2 JP5934745 B2 JP 5934745B2 JP 2014114125 A JP2014114125 A JP 2014114125A JP 2014114125 A JP2014114125 A JP 2014114125A JP 5934745 B2 JP5934745 B2 JP 5934745B2
- Authority
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- Prior art keywords
- led die
- stepped
- curved
- ceramic phosphor
- wavelength conversion
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 58
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 31
- 239000000919 ceramic Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 23
- 239000011248 coating agent Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 17
- 230000005855 radiation Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229920006302 stretch film Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Devices (AREA)
- Optical Filters (AREA)
Description
本願は、2008年9月24日付けで同一出願人により出願された米国特許出願第12/236527号明細書(代理人整理番号:PH009874US1、発明の名称:“LED with Controlled Angular Non-Uniformity”)に関する。この特許文献は、参照により本願に援用される。
104 底面
106,706 湾曲/非平坦面
108 リム
202,702,1202,1600 波長変換素子
206,706,1206 放射面
208,508,808 側面コーティング
300,1100,1200,1400 LEDパッケージ
306 LEDダイ
308,608 支持体
310 サブマウント/インターポーザ
312 ヒートシンク
314 筐体
316 電気リード
602 波長変換材
900 デバイスウェハ
1100 反射体
1202−1〜1202−4 セラミックリン光体プレート
1300 波長変換ウェハ
Claims (4)
- アクティブ領域を含む半導体レイヤのスタックを有するLEDダイ;及び
所定の角度色分布パターンを生成するよう配置される複数の湾曲した放射面に相当する複数の階段状の放射面を形成する複数のセラミックリン光体プレートを有する、前記LEDダイ上の波長変換素子
を有し、
前記複数のセラミックリン光体プレートは、異なった長さ及び幅を有し、
前記複数の階段状の放射面は、大きいセラミックリン光体プレートが前記LEDダイの上にマウントされ、より小さいセラミックリン光体が前記大きいセラミックリン光体プレートの上にマウントされている前記複数のセラミックリン光体プレートのスタックを有し、
前記複数の階段状の放射面は、異なる形状の少なくとも2つの凸状表面を有し、該少なくとも2つの凸状表面は、部分的に重なり合う少なくとも2つの半球を有する、発光ダイオードパッケージ。 - 前記複数の階段状の放射面は、前記LEDダイに関して中心をなすX軸及びY軸に対して非対称形状を有する、
請求項1に記載の発光ダイオードパッケージ。 - 発光ダイオードパッケージの製造方法であって:
所定の角度色分布パターンを生成するよう配置される複数の湾曲した放射面に相当する複数の階段状の放射面を形成するよう複数のセラミックリン光体プレートを、アクティブ領域を含む半導体レイヤのスタックを有するLEDダイ上に形成するステップ
を有し、
前記複数のセラミックリン光体プレートは、異なった長さ及び幅を有し、
前記複数の階段状の放射面は、大きいセラミックリン光体プレートが前記LEDダイの上にマウントされ、より小さいセラミックリン光体が前記大きいセラミックリン光体プレートの上にマウントされている前記複数のセラミックリン光体プレートのスタックを有し、
前記複数の階段状の放射面は、異なる形状の少なくとも2つの凸状表面を有し、該少なくとも2つの凸状表面は、部分的に重なり合う少なくとも2つの半球を有する、発光ダイオードパッケージの製造方法。 - 前記複数の階段状の放射面は、前記LEDダイに関して中心をなすX軸及びY軸に対して非対称形状を有する、
請求項3に記載の発光ダイオードパッケージの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/507,493 US8803171B2 (en) | 2009-07-22 | 2009-07-22 | Reduced color over angle variation LEDs |
US12/507,493 | 2009-07-22 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012521125A Division JP2012533904A (ja) | 2009-07-22 | 2010-06-24 | 角度に対する色変化が低減されたled |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014158054A JP2014158054A (ja) | 2014-08-28 |
JP5934745B2 true JP5934745B2 (ja) | 2016-06-15 |
Family
ID=42813148
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012521125A Pending JP2012533904A (ja) | 2009-07-22 | 2010-06-24 | 角度に対する色変化が低減されたled |
JP2014114125A Active JP5934745B2 (ja) | 2009-07-22 | 2014-06-02 | 発光ダイオードパッケージ及びその製造方法 |
JP2015145694A Active JP6074669B2 (ja) | 2009-07-22 | 2015-07-23 | 発光ダイオードパッケージ及びその製造方法 |
JP2016243476A Pending JP2017069574A (ja) | 2009-07-22 | 2016-12-15 | 発光ダイオードパッケージ及びその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012521125A Pending JP2012533904A (ja) | 2009-07-22 | 2010-06-24 | 角度に対する色変化が低減されたled |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015145694A Active JP6074669B2 (ja) | 2009-07-22 | 2015-07-23 | 発光ダイオードパッケージ及びその製造方法 |
JP2016243476A Pending JP2017069574A (ja) | 2009-07-22 | 2016-12-15 | 発光ダイオードパッケージ及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8803171B2 (ja) |
EP (1) | EP2457268B1 (ja) |
JP (4) | JP2012533904A (ja) |
KR (1) | KR101704087B1 (ja) |
CN (1) | CN102473818B (ja) |
TW (2) | TWI524561B (ja) |
WO (1) | WO2011010237A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MX2013005202A (es) * | 2010-03-30 | 2013-11-20 | Changchn Inst Of Applied Chemistry Chinese Academy Of Sciences | Dispositivo de corriente alterna de led blanco. |
JP5893888B2 (ja) * | 2011-10-13 | 2016-03-23 | シチズン電子株式会社 | 半導体発光装置 |
EP2777080B1 (en) * | 2011-11-08 | 2019-07-03 | LG Innotek Co., Ltd. | Light emitting device |
KR101338704B1 (ko) * | 2011-12-18 | 2013-12-06 | 엘지이노텍 주식회사 | 발광장치 |
US9379293B2 (en) | 2012-07-20 | 2016-06-28 | Koninklijke Philips N.V. | LED with ceramic green phosphor and protected red phosphor layer |
CN102751428B (zh) * | 2012-07-20 | 2016-02-17 | 佛山市国星光电股份有限公司 | 一种光转换结构及其制造方法及发光二级管器件 |
JP2016507764A (ja) | 2012-12-12 | 2016-03-10 | レッディル オサケユキチュアLedil Oy | 光学面、レンズ、リフレクタ、光学構成、及び照明装置 |
US9235054B2 (en) | 2012-12-12 | 2016-01-12 | Ledil Oy | Optical surface, lens and reflector |
US10416356B2 (en) | 2014-01-23 | 2019-09-17 | Lumileds, LLC | Light emitting device with self-aligning preformed lens |
CN105304787A (zh) * | 2014-06-30 | 2016-02-03 | 山东浪潮华光光电子股份有限公司 | 一种led薄膜芯片白光封装结构及其制备方法 |
EP2963474A1 (de) | 2014-07-05 | 2016-01-06 | Swareflex GmbH | Teilmattierte optische Linsen |
EP3265862B1 (en) | 2015-02-05 | 2022-03-30 | Signify Holding B.V. | Color correcting collimation of light from a color over position light source |
WO2018162076A1 (en) * | 2017-03-10 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
US20220131052A1 (en) * | 2019-03-14 | 2022-04-28 | Osram Opto Semiconductors Gmbh | Optoelectronic Semiconductor Component and Method for Producing An Optoelectronic Semiconductor Component |
JP7529700B2 (ja) | 2019-06-19 | 2024-08-06 | ジェイド バード ディスプレイ(シャンハイ) リミテッド | マルチカラーledピクセルユニットのシステム及び方法 |
DE102019121507B4 (de) * | 2019-08-09 | 2021-04-22 | Schott Ag | Beleuchtungseinrichtung mit Lichtkonversionselement |
WO2021247887A1 (en) | 2020-06-03 | 2021-12-09 | Jade Bird Display (shanghai) Limited | Systems and methods for multi-color led pixel unit with vertical light emission |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03214101A (ja) * | 1990-01-18 | 1991-09-19 | Nippon Sheet Glass Co Ltd | 稠密充填レンズアレイ |
JPH07306304A (ja) * | 1994-05-11 | 1995-11-21 | Ricoh Opt Ind Co Ltd | オプチカル・ホモジナイザー |
JP4122738B2 (ja) | 2001-07-26 | 2008-07-23 | 松下電工株式会社 | 発光装置の製造方法 |
JP2003110146A (ja) | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
US7554258B2 (en) | 2002-10-22 | 2009-06-30 | Osram Opto Semiconductors Gmbh | Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body |
JP4123057B2 (ja) | 2003-05-26 | 2008-07-23 | 松下電工株式会社 | 発光装置及びその製造方法 |
JP2004349646A (ja) | 2003-05-26 | 2004-12-09 | Matsushita Electric Works Ltd | 発光装置 |
JP4259198B2 (ja) * | 2003-06-18 | 2009-04-30 | 豊田合成株式会社 | 発光装置用波長変換部の製造方法及び発光装置の製造方法 |
JP4241457B2 (ja) * | 2003-06-26 | 2009-03-18 | 富士ゼロックス株式会社 | レンズ付き発光素子の製造方法 |
DE602004028648D1 (de) * | 2003-11-25 | 2010-09-23 | Panasonic Elec Works Co Ltd | Lichtemittierendes bauelement mit einem leuchtdiodenchip |
JP4020092B2 (ja) | 2004-03-16 | 2007-12-12 | 住友電気工業株式会社 | 半導体発光装置 |
US7361938B2 (en) | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
KR100576866B1 (ko) * | 2004-06-16 | 2006-05-10 | 삼성전기주식회사 | 발광다이오드 및 그 제조방법 |
DE102004047727B4 (de) | 2004-09-30 | 2018-01-18 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip mit einer Konverterschicht und Verfahren zur Herstellung eines Lumineszenzdiodenchips mit einer Konverterschicht |
DE102004053116A1 (de) * | 2004-11-03 | 2006-05-04 | Tridonic Optoelectronics Gmbh | Leuchtdioden-Anordnung mit Farbkonversions-Material |
US7462502B2 (en) * | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
JP2006237264A (ja) * | 2005-02-24 | 2006-09-07 | Kyocera Corp | 発光装置および照明装置 |
JP2006286701A (ja) * | 2005-03-31 | 2006-10-19 | Mitsubishi Electric Corp | 半導体発光装置 |
WO2006126119A2 (en) | 2005-05-25 | 2006-11-30 | Philips Intellectual Property & Standards Gmbh | Electroluminescence device |
US7736945B2 (en) | 2005-06-09 | 2010-06-15 | Philips Lumileds Lighting Company, Llc | LED assembly having maximum metal support for laser lift-off of growth substrate |
WO2007007236A2 (en) | 2005-07-14 | 2007-01-18 | Philips Intellectual Property & Standards Gmbh | Electroluminescent device |
JP2007109946A (ja) * | 2005-10-14 | 2007-04-26 | Toyoda Gosei Co Ltd | 蛍光体板及びこれを備えた発光装置 |
JP4956977B2 (ja) | 2005-12-05 | 2012-06-20 | 日亜化学工業株式会社 | 発光装置 |
RU2008139408A (ru) * | 2006-03-06 | 2010-04-20 | Конинклейке Филипс Электроникс Н.В. (Nl) | Модуль светоизлучающего диода |
KR20090005194A (ko) * | 2006-04-18 | 2009-01-12 | 라미나 라이팅, 인크. | 피제어 색 혼합용 광 디바이스 |
JP2007311445A (ja) | 2006-05-17 | 2007-11-29 | Stanley Electric Co Ltd | 半導体発光装置及びその製造方法 |
JP2008053702A (ja) * | 2006-07-26 | 2008-03-06 | Kyocera Corp | 発光装置および照明装置 |
KR100851636B1 (ko) * | 2006-07-27 | 2008-08-13 | 삼성전기주식회사 | 표면실장형 발광다이오드 소자 |
JPWO2008096714A1 (ja) * | 2007-02-05 | 2010-05-20 | 株式会社ニコン | 樹脂封止発光素子、平面状光源及びそれらの製造方法、並びに液晶表示装置 |
KR100862532B1 (ko) * | 2007-03-13 | 2008-10-09 | 삼성전기주식회사 | 발광 다이오드 패키지 제조방법 |
US8783887B2 (en) | 2007-10-01 | 2014-07-22 | Intematix Corporation | Color tunable light emitting device |
US20090321758A1 (en) * | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
-
2009
- 2009-07-22 US US12/507,493 patent/US8803171B2/en active Active
-
2010
- 2010-06-24 JP JP2012521125A patent/JP2012533904A/ja active Pending
- 2010-06-24 KR KR1020127004495A patent/KR101704087B1/ko active IP Right Grant
- 2010-06-24 CN CN201080033001.6A patent/CN102473818B/zh active Active
- 2010-06-24 WO PCT/IB2010/052897 patent/WO2011010237A1/en active Application Filing
- 2010-06-24 EP EP10734317.0A patent/EP2457268B1/en active Active
- 2010-07-19 TW TW099123674A patent/TWI524561B/zh active
- 2010-07-19 TW TW104144791A patent/TWI624084B/zh active
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2014
- 2014-06-02 JP JP2014114125A patent/JP5934745B2/ja active Active
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2015
- 2015-07-23 JP JP2015145694A patent/JP6074669B2/ja active Active
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2016
- 2016-12-15 JP JP2016243476A patent/JP2017069574A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP6074669B2 (ja) | 2017-02-08 |
EP2457268B1 (en) | 2017-05-24 |
KR101704087B1 (ko) | 2017-02-08 |
CN102473818A (zh) | 2012-05-23 |
JP2015195407A (ja) | 2015-11-05 |
JP2014158054A (ja) | 2014-08-28 |
US8803171B2 (en) | 2014-08-12 |
KR20120037020A (ko) | 2012-04-18 |
EP2457268A1 (en) | 2012-05-30 |
TWI624084B (zh) | 2018-05-11 |
TW201130166A (en) | 2011-09-01 |
WO2011010237A1 (en) | 2011-01-27 |
JP2012533904A (ja) | 2012-12-27 |
TWI524561B (zh) | 2016-03-01 |
US20110018016A1 (en) | 2011-01-27 |
JP2017069574A (ja) | 2017-04-06 |
CN102473818B (zh) | 2015-09-16 |
TW201614872A (en) | 2016-04-16 |
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