WO2018162076A1 - Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component - Google Patents

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component Download PDF

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Publication number
WO2018162076A1
WO2018162076A1 PCT/EP2017/055674 EP2017055674W WO2018162076A1 WO 2018162076 A1 WO2018162076 A1 WO 2018162076A1 EP 2017055674 W EP2017055674 W EP 2017055674W WO 2018162076 A1 WO2018162076 A1 WO 2018162076A1
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WO
WIPO (PCT)
Prior art keywords
encapsulant
optoelectronic semiconductor
carrier
emission surface
radiation emission
Prior art date
Application number
PCT/EP2017/055674
Other languages
French (fr)
Inventor
Keng Chong LIM
Ting Qiao LEOW
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to PCT/EP2017/055674 priority Critical patent/WO2018162076A1/en
Publication of WO2018162076A1 publication Critical patent/WO2018162076A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the present invention relates to an optoelectronic semicon ⁇ ductor component and to a method for producing an optoelec ⁇ tronic semiconductor component.
  • Optoelectronic semiconductor components comprising optoelec ⁇ tronic semiconductor chips and wavelength conversion elements are known in the state of the art.
  • the wavelength conversion element serves to convert at least a fraction of light emit ⁇ ted by the optoelectronic semiconductor chip into light of a different wavelength. It is known to embed the optoelectronic semiconductor chip of such optoelectronic semiconductor components into the wavelength conversion element.
  • An optoelectronic semiconductor comprises a carrier having an upper side, and an optoelectronic semiconductor chip arranged on the upper side of the carrier.
  • a radiation emission surface of the optoelectronic semiconductor chip faces away from the carrier.
  • a first encapsulant covers the radiation emis ⁇ sion surface.
  • a thickness of the first encapsulant measured in a direction perpendicular to the radiation emission surface is larger above a centre of the radiation emission surface than above a margin of the radiation emission surface.
  • a second encapsulant is arranged above the upper side of the carrier and covers the first encapsulant at least partially.
  • the first encapsulant comprises a first concentration of em ⁇ bedded phosphor particles.
  • the phosphor particles embedded in the first encapsulant of this optoelectronic semiconductor component are provided to convert light emitted at the radiation emission surface of the optoelectronic semiconductor chip into light of a differ ⁇ ent wavelength.
  • the larger thickness of the first encapsulant above the centre of the radiation emission surface compared to the thickness of the first encapsulant above the margin of the radiation emission surface advantageously ensures that the light paths within the first encapsulant of light emitted into different angular directions at the radiation emission surface of the optoelectronic semiconductor chip are approxi- mately equal, independent of the angular direction.
  • the probability of light conversion is approximately equal in all directions. This may result in a high angular colour homogeneity of the lights emitted by this optoelec ⁇ tronic semiconductor component.
  • the second encapsulant comprises a second concentration of embedded phosphor particles.
  • the second concentration is lower than the first concentration.
  • Light emitted at the ra- diation emission surface of the optoelectronic semiconductor chip of this optoelectronic semiconductor component at a large angle has a longer light path within the first encap ⁇ sulant and the second encapsulant than light emitted in a perpendicular direction at the radiation emission surface.
  • the larger light path of the light emitted at a large angle is at least partially compensated by the lower second concen ⁇ tration of embedded phosphor particles in the second encap ⁇ sulant compared to the first concentration of embedded phos ⁇ phor particles in the first encapsulant.
  • all light emitted at the radiation emission surface of the optoe ⁇ lectronic semiconductor chip is subject to a similar proba ⁇ bility of light conversion.
  • the phosphor particles embedded in the second encapsul- ant comprise a median diameter between 15 ym and 30 ym.
  • such coarse phosphor particles may provide a high luminous extraction efficiency and a low scattering rate.
  • a low scattering rate prevents converted and unconvert ⁇ ed light from getting trapped inside the second encapsulant and getting reabsorbed by phosphor particles or other package components. Consequently, the coarse phosphor particles em- bedded in the second encapsulant may support a high efficien ⁇ cy of the optoelectronic semiconductor component.
  • the phosphor particles embedded in the first encapsul- ant comprise a median diameter between 15 ym and 30 ym.
  • such coarse phosphor particles may provide a high luminous extraction efficiency and a low scattering rate.
  • a low scattering rate prevents converted and unconvert ⁇ ed light from getting trapped inside the first encapsulant and getting reabsorbed by phosphor particles or other package components. Consequently, the coarse phosphor particles em ⁇ bedded in the first encapsulant may support a high efficiency of the optoelectronic semiconductor component.
  • an upper surface of the second encapsulant which faces away from the carrier comprises the shape of a hemisphere.
  • the hemisphere-shape of the upper surface of the second encapsulant ensures that light paths of light emitted at an angle at the radiation emission surface of the optoelectronic semiconductor chip are not much larger than the light paths of light emitted in a perpendicular direction at the radiation emission surface of the optoelectronic semi ⁇ conductor chip.
  • the upper surface of the first encapsulant which faces away from the carrier comprises the shape of a stepped pyra- mid.
  • the stepped-pyramid-shape of the upper surface of the first encapsulant makes sure that the light path inside the first encapsulant of light emitted at an an ⁇ gle is not much larger than the light path of light emitted in a perpendicular direction.
  • a method for producing an optoelectronic semiconductor component comprises steps for arranging an optoelectronic semicon ⁇ ductor chip on an upper side of a carrier such that a radia- tion emission surface of the optoelectronic semiconductor chip faces away from the carrier, covering the radiation emission surface with a first encapsulant such that a thick ⁇ ness of the first encapsulant measured in a direction perpen ⁇ dicular to the radiation emission surface is larger above a centre of the radiation emission surface than above a margin of the radiation emission surface, wherein the first encap ⁇ sulant comprises a first concentration of embedded phosphor particles, and arranging a second encapsulant above the upper side of the carrier such that the second encapsulant covers the first encapsulant at least partially.
  • this method allows for producing an optoelec ⁇ tronic semiconductor component which may emit light with a high angular colour homogeneity.
  • the method only involves simple standard processes which can be carried out in an easy and cost-effective manner.
  • the first encapsulant is ar ⁇ ranged above the radiation emission surface by means of a first molding process.
  • this allows to arrange the first encapsulant in a simple and cost-effective manner.
  • the second encapsulant is ar ⁇ ranged above the upper side of the carrier by means of a sec- ond molding process.
  • this allows to arrange the second encapsulant in a simple and cost-effective manner.
  • Fig. 1 shows an optoelectronic semiconductor chip arranged on a carrier
  • Fig. 2 shows an embedding of the optoelectronic semiconductor chip in a first encapsulant
  • Fig. 3 shows an embedding of the optoelectronic semiconductor chip and the first encapsulant in a second encapsulant
  • Fig. 4 shows an optoelectronic semiconductor component com ⁇ prising the carrier, the optoelectronic semiconductor chip, the first encapsulant and the second encapsulant.
  • Fig. 1 shows in schematic depiction a side view of a carrier 100 and an optoelectronic semiconductor chip 200 in an unfinished processing state during a manufacture of an optoelec ⁇ tronic semiconductor component.
  • the carrier 100 may comprise a ceramic material, for example.
  • the carrier 100 may comprise silicon, or may be a printed circuit board (PCB) or another type of carrier.
  • the carrier 100 comprises an upper side 110 which is essen ⁇ tially flat. Electric contact pads and electric conductor paths may be arranged on the upper side 110 of the carrier 100.
  • the optoelectronic semiconductor chip 200 is designed for emitting electromagnetic radiation.
  • the electromagnetic radi ⁇ ation emitted by the optoelectronic semiconductor chip 200 may be visible light, for example light comprising a wave- length in the blue or ultraviolet spectral range.
  • the optoe ⁇ lectronic semiconductor chip 200 may be a light emitting di ⁇ ode chip (LED chip), for example.
  • the optoelectronic semiconductor chip 200 comprises a radia ⁇ tion emission surface 210.
  • electromagnetic radiation is emitted at the radiation emission surface 210.
  • the optoelec ⁇ tronic semiconductor chip 200 may be a surface emitting LED chip, in which case electromagnetic radiation is only emitted at the radiation emission surface 210.
  • the optoelectronic semiconductor chip 200 may also be a volume emitting LED chip, however. In this case electromagnetic radiation is emitted also at other surfaces than the radiation emission surface 210 of the optoelectronic semiconductor chip 200.
  • Light emitted by the optoelectronic semiconductor chip 200 at the radiation emission surface 210 is radiated in a direction 211 which is perpendicular to the radiation emission surface 210 of the optoelectronic semiconductor chip 200. A part of the light emitted by the optoelectronic semiconductor chip 200 is emitted in other directions at an angle to the perpen ⁇ dicular direction 211.
  • the optoelectronic semiconductor chip 200 is arranged on the upper side 110 of the carrier 100 such that the radiation emission surface 210 of the optoelectronic semiconductor chip 200 faces away from the upper side 111 of the carrier 100.
  • the radiation emission surface 210 is parallel to the upper side 110 of the carrier 100.
  • the optoelectronic semiconductor chip 200 is electrically connected to electric contact pads arranged on the upper side 110 of the carrier 100.
  • the electric connections can be es- tablished via bond wires or via solder connections, for exam ⁇ ple .
  • Fig. 2 shows a schematic depiction of the carrier 100 and the optoelectronic semiconductor chip 200 arranged on the upper side 110 of the carrier 100 in a processing state which fol ⁇ lows the depiction of Fig. 1.
  • a first molding tool 500 has been arranged above the upper side 110 of the carrier 100.
  • the first molding tool 500 com ⁇ prises a first cavity 510 which is oriented towards the upper side 110 of the carrier 100 such that the optoelectronic sem- iconductor chip 200 arranged on the upper side 110 of the carrier is located inside the first cavity 510.
  • the first molding tool 500 is brought in contact with the upper side 110 of the carrier 100 such that the first cavity 510 is her ⁇ metically sealed between the upper side 110 of the carrier 100 and the first molding tool 500.
  • the optoelectronic semi ⁇ conductor chip 200 is enclosed in the first cavity 510.
  • the hermetically sealed first cavity 510 has been filled with a first molding compound to form a first encapsulant 300.
  • the first encapsulant 300 thus has a shape which is a negative of the shape of the first cavity 510.
  • the first encapsulant 300 covers the radiation emission sur ⁇ face 210 of the optoelectronic semiconductor chip 200.
  • the first encapsulant 300 also covers side faces of the optoelectronic semiconductor chip 200 such that the optoelectronic semiconductor chip 200 is at least partially embedded into the first encapsulant 300.
  • the part of the first encapsulant 300 covering the radiation emission surface 210 comprises a first thickness 320.
  • the first thickness 320 is measured in the direction 211 which is perpendicular to the radiation emission surface 210.
  • the part of the first encap ⁇ sulant 300 that covers the radiation emission surface 210 comprises a second thickness 330 measured in the direction 211 perpendicular to the radiation emission surface 210.
  • the first thickness 320 is larger than the second thickness 330.
  • An upper surface 310 of the first encapsulant 300 which faces away from the upper side 110 of the carrier 100 comprises the shape of a stepped pyramid. Consequently, the thickness 320, 330 of the first encapsulant 300, measured in the direction 211 perpendicular to the emission surface 210, decreases in steps between the centre 220 of the radiation emission sur- face 210 and the margin 230 of the radiation emission surface 210. It is, however, also possible to design the upper sur ⁇ face 310 of the first encapsulant 300 such that the thickness of the first encapsulant 300 decreases continuously from the centre 220 of the radiation emission surface 210 towards the margin 230 of the radiation emission surface 210. In this case, the upper surface 310 of the first encapsulant 300 can comprise the shape of a hemisphere, for example.
  • the first encapsulant 300 comprises a matrix material and a first concentration of phosphor particles embedded into the matrix material.
  • the matrix material may comprise a silicon or an epoxy, for example.
  • the phosphor particles embedded in the first encapsulant 300 are designed for converting electromagnetic radiation emitted by the optoelectronic semiconductor chip 200 into electromag ⁇ netic radiation comprising another wavelength.
  • the phosphor particles embedded in the first encapsulant 300 may be designed to convert light comprising a wavelength in the blue or ultraviolet spectral range into light comprising a wavelength in the yellow, orange or red spectral range.
  • the phosphor particles embedded in the first encapsulant 300 may be coarse particles. This means that the phosphor parti- cles embedded in the first encapsulant 300 may comprise a me ⁇ dian diameter between 15 ym and 30 ym, for example. The phosphor particles embedded in the first encapsulant 300 may also comprise different diameters, however.
  • Fig. 3 shows a schematic depiction of the carrier 100, the optoelectronic semiconductor chip 200 and the first encapsul ⁇ ant 300 in a processing state that follows the processing state depicted in Fig. 2.
  • the first molding tool 500 has been removed from the carrier 100, leaving behind the first encapsulant 300 which covers the radiation emission surface 210 of the optoelectronic sem- iconductor chip 200.
  • a second molding tool 600 has been brought in contact with the upper side 110 of the carrier 100.
  • the sec ⁇ ond molding tool 600 comprises a second cavity 610.
  • the sec- ond cavity 610 of the second molding tool 600 is larger than the first cavity 510 of the first molding tool 500.
  • the sec ⁇ ond molding tool 600 has been arranged on the upper side 110 of the carrier 100 such that the second cavity 610 faces the upper side 110 of the carrier 100.
  • the optoelectronic semi- conductor chip 200 and the first encapsulant 300 are arranged in the second cavity 610.
  • the second cavity 610 is hermeti ⁇ cally sealed between the upper side 110 of the carrier 100 and the second molding tool 600.
  • a second molding compound has been filled into the second cavity 610 to form a second encapsulant 400.
  • the second encapsulant 400 is arranged above the upper side 110 of the carrier 100 such that the second encapsulant 400 co ⁇ vers the first encapsulant 300 at least partially.
  • the second encapsulant 400 comprises a shape which is a nega ⁇ tive of the shape of the second cavity 610 of the second molding tool 600.
  • An upper surface 410 of the second encap ⁇ sulant 400 which faces away from the carrier 100 comprises the shape of a hemisphere. It is possible, however, to form the second encapsulant 400 with a different shape.
  • the second encapsulant 400 comprises a matrix material and a second concentration of phosphor particles embedded in the matrix material.
  • the matrix material of the second encapsul ⁇ ant 400 may comprise a silicon or an epoxy, for example.
  • the second concentration of embedded phosphor particles of the second encapsulant 400 is lower than the first concentra ⁇ tion of embedded phosphor particles in the first encapsulant 300.
  • the phosphor particles embedded in the second encapsulant 400 may be the same kind of phosphor particles as those embedded in the first encapsulant 300. Consequently, the phosphor par ⁇ ticles embedded in the second encapsulant 400 may comprise a median diameter between 15 ym and 30 ym.
  • Fig. 4 shows a schematic drawing of an optoelectronic semi ⁇ conductor component 10 comprising the carrier 100, the optoe ⁇ lectronic semiconductor chip 200, the first encapsulant 300 and the second encapsulant 400.
  • the optoelectronic semicon ⁇ ductor component 10 is obtained after removing the second molding tool 600 from the carrier 100.
  • Figs. 1 to 4 may be used to produce a plurality of optoelec ⁇ tronic semiconductor components 10 simultaneously.
  • a larger carrier 10 is used.
  • a plurality of optoelec ⁇ tronic semiconductor chips 200 is arranged at the upper side 110 of the carrier 100 in a spaced manner.
  • the first molding tool 500 and the second molding tool 600 each comprise a plu ⁇ rality of cavities 510, 610 and are arranged such that each one optoelectronic semiconductor chip 200 arranged on the up ⁇ per side 110 of the carrier 100 is arranged in one respective cavity 510, 610.
  • first a plurality of first encapsulants 300 and then a plurality of second encapsulants 400 are formed simultaneously.
  • the carrier 100 is divided such that a plu- rality of optoelectronic semiconductor components 10 is ob ⁇ tained, each optoelectronic semiconductor component 10 being developed as depicted in Fig. 4.

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Abstract

An optoelectronic semiconductor component (10) comprises a carrier (100) having an upper side (110), and an optoelectronic semiconductor chip (200) arranged on the upper side (110) of the carrier (100). A radiation emission surface (210) of the optoelectronic semiconductor chip (200) faces away from the carrier (100). A first encapsulant (300) covers the radiation emission surface (210). A thickness of the first encapsulant (300) measured in a direction (211) perpendicular to the radiation emission surface (210) is larger above a centre (220) of the radiation emission surface (210) than above a margin (230) of the radiation emission surface (210). A second encapsulant (400) is arranged above the upper side (110) of the carrier (100) and covers the first encapsulant (300) at least partially. The first encapsulant (300) comprises a first concentration of embedded phosphor particles, and the second encapsulant (400) comprises a second concentration of embedded phosphor particles.

Description

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
DESCRIPTION
The present invention relates to an optoelectronic semicon¬ ductor component and to a method for producing an optoelec¬ tronic semiconductor component.
Optoelectronic semiconductor components comprising optoelec¬ tronic semiconductor chips and wavelength conversion elements are known in the state of the art. The wavelength conversion element serves to convert at least a fraction of light emit¬ ted by the optoelectronic semiconductor chip into light of a different wavelength. It is known to embed the optoelectronic semiconductor chip of such optoelectronic semiconductor components into the wavelength conversion element.
It is an object of the present invention to provide an optoe¬ lectronic semiconductor component. It is a further object of the present invention to provide a method for producing an optoelectronic semiconductor component. These objectives are achieved by an optoelectronic semiconductor component and by a method for producing an optoelectronic semiconductor compo¬ nent with the features of the independent claims. Various em¬ bodiments are disclosed in the dependent claims.
An optoelectronic semiconductor comprises a carrier having an upper side, and an optoelectronic semiconductor chip arranged on the upper side of the carrier. A radiation emission surface of the optoelectronic semiconductor chip faces away from the carrier. A first encapsulant covers the radiation emis¬ sion surface. A thickness of the first encapsulant measured in a direction perpendicular to the radiation emission surface is larger above a centre of the radiation emission surface than above a margin of the radiation emission surface. A second encapsulant is arranged above the upper side of the carrier and covers the first encapsulant at least partially. The first encapsulant comprises a first concentration of em¬ bedded phosphor particles.
The phosphor particles embedded in the first encapsulant of this optoelectronic semiconductor component are provided to convert light emitted at the radiation emission surface of the optoelectronic semiconductor chip into light of a differ¬ ent wavelength. The larger thickness of the first encapsulant above the centre of the radiation emission surface compared to the thickness of the first encapsulant above the margin of the radiation emission surface advantageously ensures that the light paths within the first encapsulant of light emitted into different angular directions at the radiation emission surface of the optoelectronic semiconductor chip are approxi- mately equal, independent of the angular direction. In conse¬ quence, the probability of light conversion is approximately equal in all directions. This may result in a high angular colour homogeneity of the lights emitted by this optoelec¬ tronic semiconductor component.
In an embodiment of the optoelectronic semiconductor compo¬ nent, the second encapsulant comprises a second concentration of embedded phosphor particles. The second concentration is lower than the first concentration. Light emitted at the ra- diation emission surface of the optoelectronic semiconductor chip of this optoelectronic semiconductor component at a large angle has a longer light path within the first encap¬ sulant and the second encapsulant than light emitted in a perpendicular direction at the radiation emission surface. The larger light path of the light emitted at a large angle is at least partially compensated by the lower second concen¬ tration of embedded phosphor particles in the second encap¬ sulant compared to the first concentration of embedded phos¬ phor particles in the first encapsulant. In consequence, all light emitted at the radiation emission surface of the optoe¬ lectronic semiconductor chip is subject to a similar proba¬ bility of light conversion. In an embodiment of the optoelectronic semiconductor compo¬ nent, the phosphor particles embedded in the second encapsul- ant comprise a median diameter between 15 ym and 30 ym. Advantageously, such coarse phosphor particles may provide a high luminous extraction efficiency and a low scattering rate. A low scattering rate prevents converted and unconvert¬ ed light from getting trapped inside the second encapsulant and getting reabsorbed by phosphor particles or other package components. Consequently, the coarse phosphor particles em- bedded in the second encapsulant may support a high efficien¬ cy of the optoelectronic semiconductor component.
In an embodiment of the optoelectronic semiconductor compo¬ nent, the phosphor particles embedded in the first encapsul- ant comprise a median diameter between 15 ym and 30 ym. Advantageously, such coarse phosphor particles may provide a high luminous extraction efficiency and a low scattering rate. A low scattering rate prevents converted and unconvert¬ ed light from getting trapped inside the first encapsulant and getting reabsorbed by phosphor particles or other package components. Consequently, the coarse phosphor particles em¬ bedded in the first encapsulant may support a high efficiency of the optoelectronic semiconductor component. In an embodiment of the optoelectronic semiconductor compo¬ nent, an upper surface of the second encapsulant which faces away from the carrier comprises the shape of a hemisphere. Advantageously, the hemisphere-shape of the upper surface of the second encapsulant ensures that light paths of light emitted at an angle at the radiation emission surface of the optoelectronic semiconductor chip are not much larger than the light paths of light emitted in a perpendicular direction at the radiation emission surface of the optoelectronic semi¬ conductor chip.
In an embodiment of the optoelectronic semiconductor compo¬ nent, the upper surface of the first encapsulant which faces away from the carrier comprises the shape of a stepped pyra- mid. Advantageously, the stepped-pyramid-shape of the upper surface of the first encapsulant makes sure that the light path inside the first encapsulant of light emitted at an an¬ gle is not much larger than the light path of light emitted in a perpendicular direction.
A method for producing an optoelectronic semiconductor component comprises steps for arranging an optoelectronic semicon¬ ductor chip on an upper side of a carrier such that a radia- tion emission surface of the optoelectronic semiconductor chip faces away from the carrier, covering the radiation emission surface with a first encapsulant such that a thick¬ ness of the first encapsulant measured in a direction perpen¬ dicular to the radiation emission surface is larger above a centre of the radiation emission surface than above a margin of the radiation emission surface, wherein the first encap¬ sulant comprises a first concentration of embedded phosphor particles, and arranging a second encapsulant above the upper side of the carrier such that the second encapsulant covers the first encapsulant at least partially.
Advantageously, this method allows for producing an optoelec¬ tronic semiconductor component which may emit light with a high angular colour homogeneity. Advantageously, the method only involves simple standard processes which can be carried out in an easy and cost-effective manner.
In an embodiment of the method, the first encapsulant is ar¬ ranged above the radiation emission surface by means of a first molding process. Advantageously, this allows to arrange the first encapsulant in a simple and cost-effective manner.
In an embodiment of the method, the second encapsulant is ar¬ ranged above the upper side of the carrier by means of a sec- ond molding process. Advantageously, this allows to arrange the second encapsulant in a simple and cost-effective manner. The above-described properties, features and advantages of this invention and the way in which they are achieved will become clearer and more clearly understood in association with the following description of the exemplary embodiments which are explained in greater detail in association with the drawings, in which, in schematic representation:
Fig. 1 shows an optoelectronic semiconductor chip arranged on a carrier;
Fig. 2 shows an embedding of the optoelectronic semiconductor chip in a first encapsulant;
Fig. 3 shows an embedding of the optoelectronic semiconductor chip and the first encapsulant in a second encapsulant; and
Fig. 4 shows an optoelectronic semiconductor component com¬ prising the carrier, the optoelectronic semiconductor chip, the first encapsulant and the second encapsulant.
Fig. 1 shows in schematic depiction a side view of a carrier 100 and an optoelectronic semiconductor chip 200 in an unfinished processing state during a manufacture of an optoelec¬ tronic semiconductor component.
The carrier 100 may comprise a ceramic material, for example. Alternatively, the carrier 100 may comprise silicon, or may be a printed circuit board (PCB) or another type of carrier. The carrier 100 comprises an upper side 110 which is essen¬ tially flat. Electric contact pads and electric conductor paths may be arranged on the upper side 110 of the carrier 100. The optoelectronic semiconductor chip 200 is designed for emitting electromagnetic radiation. The electromagnetic radi¬ ation emitted by the optoelectronic semiconductor chip 200 may be visible light, for example light comprising a wave- length in the blue or ultraviolet spectral range. The optoe¬ lectronic semiconductor chip 200 may be a light emitting di¬ ode chip (LED chip), for example. The optoelectronic semiconductor chip 200 comprises a radia¬ tion emission surface 210. When the optoelectronic semicon¬ ductor chip 200 is operated, electromagnetic radiation is emitted at the radiation emission surface 210. The optoelec¬ tronic semiconductor chip 200 may be a surface emitting LED chip, in which case electromagnetic radiation is only emitted at the radiation emission surface 210. The optoelectronic semiconductor chip 200 may also be a volume emitting LED chip, however. In this case electromagnetic radiation is emitted also at other surfaces than the radiation emission surface 210 of the optoelectronic semiconductor chip 200.
Light emitted by the optoelectronic semiconductor chip 200 at the radiation emission surface 210 is radiated in a direction 211 which is perpendicular to the radiation emission surface 210 of the optoelectronic semiconductor chip 200. A part of the light emitted by the optoelectronic semiconductor chip 200 is emitted in other directions at an angle to the perpen¬ dicular direction 211. The optoelectronic semiconductor chip 200 is arranged on the upper side 110 of the carrier 100 such that the radiation emission surface 210 of the optoelectronic semiconductor chip 200 faces away from the upper side 111 of the carrier 100. The radiation emission surface 210 is parallel to the upper side 110 of the carrier 100.
The optoelectronic semiconductor chip 200 is electrically connected to electric contact pads arranged on the upper side 110 of the carrier 100. The electric connections can be es- tablished via bond wires or via solder connections, for exam¬ ple . Fig. 2 shows a schematic depiction of the carrier 100 and the optoelectronic semiconductor chip 200 arranged on the upper side 110 of the carrier 100 in a processing state which fol¬ lows the depiction of Fig. 1.
A first molding tool 500 has been arranged above the upper side 110 of the carrier 100. The first molding tool 500 com¬ prises a first cavity 510 which is oriented towards the upper side 110 of the carrier 100 such that the optoelectronic sem- iconductor chip 200 arranged on the upper side 110 of the carrier is located inside the first cavity 510. The first molding tool 500 is brought in contact with the upper side 110 of the carrier 100 such that the first cavity 510 is her¬ metically sealed between the upper side 110 of the carrier 100 and the first molding tool 500. The optoelectronic semi¬ conductor chip 200 is enclosed in the first cavity 510.
The hermetically sealed first cavity 510 has been filled with a first molding compound to form a first encapsulant 300. The first encapsulant 300 thus has a shape which is a negative of the shape of the first cavity 510.
The first encapsulant 300 covers the radiation emission sur¬ face 210 of the optoelectronic semiconductor chip 200. In the example depicted in Fig. 2, the first encapsulant 300 also covers side faces of the optoelectronic semiconductor chip 200 such that the optoelectronic semiconductor chip 200 is at least partially embedded into the first encapsulant 300. Above a centre 220 of the radiation emission surface 210 of the optoelectronic semiconductor chip 200, the part of the first encapsulant 300 covering the radiation emission surface 210 comprises a first thickness 320. The first thickness 320 is measured in the direction 211 which is perpendicular to the radiation emission surface 210. Above a margin 230 of the radiation emission surface 210, the part of the first encap¬ sulant 300 that covers the radiation emission surface 210 comprises a second thickness 330 measured in the direction 211 perpendicular to the radiation emission surface 210. The first thickness 320 is larger than the second thickness 330.
An upper surface 310 of the first encapsulant 300 which faces away from the upper side 110 of the carrier 100 comprises the shape of a stepped pyramid. Consequently, the thickness 320, 330 of the first encapsulant 300, measured in the direction 211 perpendicular to the emission surface 210, decreases in steps between the centre 220 of the radiation emission sur- face 210 and the margin 230 of the radiation emission surface 210. It is, however, also possible to design the upper sur¬ face 310 of the first encapsulant 300 such that the thickness of the first encapsulant 300 decreases continuously from the centre 220 of the radiation emission surface 210 towards the margin 230 of the radiation emission surface 210. In this case, the upper surface 310 of the first encapsulant 300 can comprise the shape of a hemisphere, for example.
The first encapsulant 300 comprises a matrix material and a first concentration of phosphor particles embedded into the matrix material. The matrix material may comprise a silicon or an epoxy, for example.
The phosphor particles embedded in the first encapsulant 300 are designed for converting electromagnetic radiation emitted by the optoelectronic semiconductor chip 200 into electromag¬ netic radiation comprising another wavelength. For example, the phosphor particles embedded in the first encapsulant 300 may be designed to convert light comprising a wavelength in the blue or ultraviolet spectral range into light comprising a wavelength in the yellow, orange or red spectral range.
The phosphor particles embedded in the first encapsulant 300 may be coarse particles. This means that the phosphor parti- cles embedded in the first encapsulant 300 may comprise a me¬ dian diameter between 15 ym and 30 ym, for example. The phosphor particles embedded in the first encapsulant 300 may also comprise different diameters, however. Fig. 3 shows a schematic depiction of the carrier 100, the optoelectronic semiconductor chip 200 and the first encapsul¬ ant 300 in a processing state that follows the processing state depicted in Fig. 2.
The first molding tool 500 has been removed from the carrier 100, leaving behind the first encapsulant 300 which covers the radiation emission surface 210 of the optoelectronic sem- iconductor chip 200.
Afterwards, a second molding tool 600 has been brought in contact with the upper side 110 of the carrier 100. The sec¬ ond molding tool 600 comprises a second cavity 610. The sec- ond cavity 610 of the second molding tool 600 is larger than the first cavity 510 of the first molding tool 500. The sec¬ ond molding tool 600 has been arranged on the upper side 110 of the carrier 100 such that the second cavity 610 faces the upper side 110 of the carrier 100. The optoelectronic semi- conductor chip 200 and the first encapsulant 300 are arranged in the second cavity 610. The second cavity 610 is hermeti¬ cally sealed between the upper side 110 of the carrier 100 and the second molding tool 600. Afterwards, a second molding compound has been filled into the second cavity 610 to form a second encapsulant 400. The second encapsulant 400 is arranged above the upper side 110 of the carrier 100 such that the second encapsulant 400 co¬ vers the first encapsulant 300 at least partially.
The second encapsulant 400 comprises a shape which is a nega¬ tive of the shape of the second cavity 610 of the second molding tool 600. An upper surface 410 of the second encap¬ sulant 400 which faces away from the carrier 100 comprises the shape of a hemisphere. It is possible, however, to form the second encapsulant 400 with a different shape. The second encapsulant 400 comprises a matrix material and a second concentration of phosphor particles embedded in the matrix material. The matrix material of the second encapsul¬ ant 400 may comprise a silicon or an epoxy, for example.
The second concentration of embedded phosphor particles of the second encapsulant 400 is lower than the first concentra¬ tion of embedded phosphor particles in the first encapsulant 300.
The phosphor particles embedded in the second encapsulant 400 may be the same kind of phosphor particles as those embedded in the first encapsulant 300. Consequently, the phosphor par¬ ticles embedded in the second encapsulant 400 may comprise a median diameter between 15 ym and 30 ym.
Fig. 4 shows a schematic drawing of an optoelectronic semi¬ conductor component 10 comprising the carrier 100, the optoe¬ lectronic semiconductor chip 200, the first encapsulant 300 and the second encapsulant 400. The optoelectronic semicon¬ ductor component 10 is obtained after removing the second molding tool 600 from the carrier 100.
The method for producing the optoelectronic semiconductor component 10 which has been described in conjunction with
Figs. 1 to 4 may be used to produce a plurality of optoelec¬ tronic semiconductor components 10 simultaneously. To this end, a larger carrier 10 is used. A plurality of optoelec¬ tronic semiconductor chips 200 is arranged at the upper side 110 of the carrier 100 in a spaced manner. The first molding tool 500 and the second molding tool 600 each comprise a plu¬ rality of cavities 510, 610 and are arranged such that each one optoelectronic semiconductor chip 200 arranged on the up¬ per side 110 of the carrier 100 is arranged in one respective cavity 510, 610. In this manner, first a plurality of first encapsulants 300 and then a plurality of second encapsulants 400 are formed simultaneously. After removing the second molding tool 600, the carrier 100 is divided such that a plu- rality of optoelectronic semiconductor components 10 is ob¬ tained, each optoelectronic semiconductor component 10 being developed as depicted in Fig. 4.
The invention has been illustrated and described in greater detail on the basis of the preferred exemplary embodiments. Nevertheless, the invention is not restricted to the examples disclosed. Rather, other variations can be derived therefrom by a person skilled in the art, without departing from the scope of protection of the invention.
REFERENCE SYMBOLS
10 optoelectronic semiconductor component 100 carrier
110 upper side
200 optoelectronic semiconductor chip
210 radiation emission surface
211 direction
220 centre
230 margin
300 first encapsulant
310 upper surface
320 first thickness
330 second thickness
400 second encapsulant
410 upper surface
500 first molding tool
510 first cavity 600 second molding tool
610 second cavity

Claims

An optoelectronic semiconductor component (10)
comprising
a carrier (100) having an upper side (110),
and an optoelectronic semiconductor chip (200) arranged on the upper side (110) of the carrier (100),
wherein a radiation emission surface (210) of the optoe¬ lectronic semiconductor chip (200) faces away from the carrier (100) ,
wherein a first encapsulant (300) covers the radiation emission surface (210),
wherein a thickness (320, 330) of the first encapsulant (300) measured in a direction (211) perpendicular to the radiation emission surface (210) is larger above a centre (220) of the radiation emission surface (210) than above a margin (230) of the radiation emission surface (210), wherein a second encapsulant (400) is arranged above the upper side (110) of the carrier (100) and covers the first encapsulant (300) at least partially,
wherein the first encapsulant (300) comprises a first concentration of embedded phosphor particles.
The optoelectronic semiconductor component (10) of claim 1,
wherein the second encapsulant (400) comprises a second concentration of embedded phosphor particles,
wherein the second concentration is lower than the first concentration.
The optoelectronic semiconductor component (10) of claim 2,
wherein the phosphor particles embedded in the second en¬ capsulant (400) comprise a median diameter between 15 ym and 30 ym.
4. The optoelectronic semiconductor component (10) of one of the previous claims, wherein the phosphor particles embedded in the first en- capsulant (300) comprise a median diameter between 15 ym and 30 ym.
5. The optoelectronic semiconductor component (10) of one of the previous claims,
wherein an upper surface (410) of the second encapsulant (400) which faces away from the carrier (100) comprises the shape of a hemisphere.
6. The optoelectronic semiconductor component (10) of one of the previous claims,
wherein an upper surface (310) of the first encapsulant (300) which faces away from the carrier (100) comprises the shape of a stepped pyramid.
7. A method for producing an optoelectronic semiconductor component (10)
with the following steps:
- arranging an optoelectronic semiconductor chip (200) on an upper side (110) of a carrier (100) such that a radia¬ tion emission surface (210) of the optoelectronic semi¬ conductor chip (200) faces away from the carrier (100);
- covering the radiation emission surface (210) with a first encapsulant (300) such that a thickness (320, 330) of the first encapsulant (300) measured in a direction (211) perpendicular to the radiation emission surface (210) is larger above a centre (220) of the radiation emission surface (210) than above a margin (230) of the radiation emission surface (210), wherein the first encapsulant (300) comprises a first concentration of embed¬ ded phosphor particles;
- arranging a second encapsulant (400) above the upper side (110) of the carrier (100) such that the second en¬ capsulant (400) covers the first encapsulant (300) at least partially.
8. The method of claim 7,
wherein the first encapsulant (300) is arranged above the radiation emission surface (210) by means of a first molding process.
9. The method of one of claims 7 and 8,
wherein the second encapsulant (400) is arranged above the upper side (110) of the carrier (100) by means of a second molding process.
PCT/EP2017/055674 2017-03-10 2017-03-10 Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component WO2018162076A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020182313A1 (en) * 2019-03-14 2020-09-17 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1895600A1 (en) * 2005-06-20 2008-03-05 Rohm Co., Ltd. White semiconductor light emitting element and manufacturing method thereof
US20110018016A1 (en) * 2009-07-22 2011-01-27 Koninklijke Philips Electronics N.V. Reduced color over angle variation leds
US20140070248A1 (en) * 2012-09-07 2014-03-13 Kabushiki Kaisha Toshiba Light emitting device and light emitting module
EP2851971A1 (en) * 2013-09-23 2015-03-25 Brightek Optoelectronic (Shenzhen) Co., Ltd. LED package structures for preventing lateral light leakage and method of manufacturing the same
US20150255437A1 (en) * 2012-09-27 2015-09-10 Osram Opto Semiconductors Gmbh Optoelectronic Component

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1895600A1 (en) * 2005-06-20 2008-03-05 Rohm Co., Ltd. White semiconductor light emitting element and manufacturing method thereof
US20110018016A1 (en) * 2009-07-22 2011-01-27 Koninklijke Philips Electronics N.V. Reduced color over angle variation leds
US20140070248A1 (en) * 2012-09-07 2014-03-13 Kabushiki Kaisha Toshiba Light emitting device and light emitting module
US20150255437A1 (en) * 2012-09-27 2015-09-10 Osram Opto Semiconductors Gmbh Optoelectronic Component
EP2851971A1 (en) * 2013-09-23 2015-03-25 Brightek Optoelectronic (Shenzhen) Co., Ltd. LED package structures for preventing lateral light leakage and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020182313A1 (en) * 2019-03-14 2020-09-17 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

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