JP5927602B2 - 表示装置の製造方法 - Google Patents

表示装置の製造方法 Download PDF

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Publication number
JP5927602B2
JP5927602B2 JP2011221980A JP2011221980A JP5927602B2 JP 5927602 B2 JP5927602 B2 JP 5927602B2 JP 2011221980 A JP2011221980 A JP 2011221980A JP 2011221980 A JP2011221980 A JP 2011221980A JP 5927602 B2 JP5927602 B2 JP 5927602B2
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JP
Japan
Prior art keywords
display
target
substrate
display device
layer
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Active
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JP2011221980A
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English (en)
Japanese (ja)
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JP2013084669A (ja
JP2013084669A5 (enExample
Inventor
俊明 荒井
俊明 荒井
隆成 藤森
隆成 藤森
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Joled Inc
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Joled Inc
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Publication date
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Priority to JP2011221980A priority Critical patent/JP5927602B2/ja
Priority to US13/613,337 priority patent/US8815619B2/en
Publication of JP2013084669A publication Critical patent/JP2013084669A/ja
Publication of JP2013084669A5 publication Critical patent/JP2013084669A5/ja
Application granted granted Critical
Publication of JP5927602B2 publication Critical patent/JP5927602B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
JP2011221980A 2011-10-06 2011-10-06 表示装置の製造方法 Active JP5927602B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011221980A JP5927602B2 (ja) 2011-10-06 2011-10-06 表示装置の製造方法
US13/613,337 US8815619B2 (en) 2011-10-06 2012-09-13 Method of manufacturing display unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011221980A JP5927602B2 (ja) 2011-10-06 2011-10-06 表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013084669A JP2013084669A (ja) 2013-05-09
JP2013084669A5 JP2013084669A5 (enExample) 2014-10-02
JP5927602B2 true JP5927602B2 (ja) 2016-06-01

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ID=48042334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011221980A Active JP5927602B2 (ja) 2011-10-06 2011-10-06 表示装置の製造方法

Country Status (2)

Country Link
US (1) US8815619B2 (enExample)
JP (1) JP5927602B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07121322B2 (ja) 1991-08-30 1995-12-25 株式会社東芝 水切り洗浄方法および水切り洗浄装置
JP3109871B2 (ja) 1991-10-21 2000-11-20 関東電化工業株式会社 物品の水切り・乾燥方法及び装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101930383B1 (ko) 2012-10-31 2019-03-11 엘지디스플레이 주식회사 유기발광장치 및 그 제조방법
US9012261B2 (en) 2013-03-13 2015-04-21 Intermolecular, Inc. High productivity combinatorial screening for stable metal oxide TFTs
WO2015107606A1 (ja) * 2014-01-15 2015-07-23 株式会社Ｊｏｌｅｄ 表示装置及び薄膜トランジスタ基板
US9337030B2 (en) 2014-03-26 2016-05-10 Intermolecular, Inc. Method to grow in-situ crystalline IGZO using co-sputtering targets
JP6274968B2 (ja) * 2014-05-16 2018-02-07 ローム株式会社 半導体装置
JP6673731B2 (ja) * 2016-03-23 2020-03-25 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102485169B1 (ko) * 2017-09-08 2023-01-09 삼성디스플레이 주식회사 표시 장치, 이의 제조 방법, 및 전극 형성 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088213A (ja) * 1994-06-23 1996-01-12 Casio Comput Co Ltd スパッタ法およびその装置
JP4470029B2 (ja) 1999-06-01 2010-06-02 東ソー株式会社 分割ｉｔｏスパッタリングターゲット
WO2010090197A1 (ja) * 2009-02-04 2010-08-12 シャープ株式会社 透明導電膜形成体及びその製造方法
US8174021B2 (en) * 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07121322B2 (ja) 1991-08-30 1995-12-25 株式会社東芝 水切り洗浄方法および水切り洗浄装置
JP3109871B2 (ja) 1991-10-21 2000-11-20 関東電化工業株式会社 物品の水切り・乾燥方法及び装置

Also Published As

Publication number Publication date
US20130089940A1 (en) 2013-04-11
JP2013084669A (ja) 2013-05-09
US8815619B2 (en) 2014-08-26

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