JP5919607B2 - 相変化物質に基づくプログラマブル抵抗を用いた遅延発生器 - Google Patents
相変化物質に基づくプログラマブル抵抗を用いた遅延発生器 Download PDFInfo
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- JP5919607B2 JP5919607B2 JP2012143199A JP2012143199A JP5919607B2 JP 5919607 B2 JP5919607 B2 JP 5919607B2 JP 2012143199 A JP2012143199 A JP 2012143199A JP 2012143199 A JP2012143199 A JP 2012143199A JP 5919607 B2 JP5919607 B2 JP 5919607B2
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- 239000012782 phase change material Substances 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims description 32
- 150000004770 chalcogenides Chemical class 0.000 claims description 27
- 230000005611 electricity Effects 0.000 claims description 12
- 238000013528 artificial neural network Methods 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 210000002569 neuron Anatomy 0.000 claims description 2
- 230000001934 delay Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000001537 neural effect Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 241000207199 Citrus Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000020971 citrus fruits Nutrition 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 210000003061 neural cell Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
- G06N3/049—Temporal neural networks, e.g. delay elements, oscillating neurons or pulsed inputs
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
- H03K2005/00019—Variable delay
- H03K2005/00026—Variable delay controlled by an analog electrical signal, e.g. obtained after conversion by a D/A converter
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
- H03K2005/0015—Layout of the delay element
- H03K2005/00156—Layout of the delay element using opamps, comparators, voltage multipliers or other analog building blocks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Biophysics (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Data Mining & Analysis (AREA)
- Artificial Intelligence (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Computing Systems (AREA)
- Computational Linguistics (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Nonlinear Science (AREA)
- Neurology (AREA)
- Semiconductor Memories (AREA)
- Pulse Circuits (AREA)
Description
Rは時間tにおけるPCM物質の抵抗値、
R0は初期時間t0におけるPCM物質の抵抗値、
νは使用されるカルコゲナイドに依存する定数である。
Rは時間tにおけるPCM物質の抵抗値、
R0は初期時間t0、例えば前記抵抗がプログラミングされている時間におけるPCM物質の抵抗値、
νは使用されるカルコゲナイドに依存するパラメータである。例として、Ge2Sb2Te5が用いられる場合、νの値は0.11〜0.13の間にある。
101 金属電極
102 金属電極
103 円筒形のタングステンシート
104 中間膜
200 第一の曲線
201 第二の曲線
202 第三の曲線
203 第四の曲線
204 第五の曲線
205 第六の曲線
10 プログラミング・モジュール
11 プログラマブル抵抗
12 基準抵抗
13 比較器
14 比較器の第一入力
15 比較器の第二入力
16 電流比較器
17 遅延発生器
18 遅延発生器
19 電圧比較器
20 ニューラルネットワーク
21 遅延発生器による制御
22 遅延発生器
24 電流比較器の第一入力
25 電流比較器の第二入力
26 電圧比較器の第一入力
27 電圧比較器の第二入力
30 電圧発生装置
Claims (11)
- 遅延発生器であって、カルコゲナイドに基づく相変化物質で作られる、少なくとも1つのプログラマブル抵抗RPCM(11)を含み、前記抵抗RPCMが、遅延を発生させるために、前記抵抗RPCMの抵抗値が初期値R0に等しく、そして前記カルコゲナイドが非晶相であるようなやり方で初期化され、比較器(13、16、19)が、時間の経過に対して安定な基準電気量を、前記プログラマブル抵抗RPCM(11)の抵抗値を表わす可変電気量と比較し、前記比較器が特異信号sを発生させ、前記特異性が、前記2つの電気量の間の差が符号を変えるときに生成される、遅延発生器。
- 前記基準電気量が基準抵抗値Rreferenceを表わす、請求項1に記載の遅延発生器。
- プログラミング・モジュール(10)が、電気的パルスを放出することにより前記抵抗RPCMを初期化し、前記パルスは、前記抵抗RPCMの抵抗値が前記初期値R0に達するようなものである、請求項1〜2のいずれか一項に記載の遅延発生器。
- 前記抵抗RPCMをプログラミングするために使用される前記電気的パルスの特性が、ルックアップ表を用いて定義される、請求項3に記載の遅延発生器。
- 前記信号sが2つの状態をとることができ、前記特異性が1つの状態から別の状態への移行に対応する、請求項1〜4のいずれか一項に記載の遅延発生器。
- 前記比較器(16)が電流比較器であり、前記可変電気量と前記基準電気量が電流である、請求項1〜5のいずれか一項に記載の遅延発生器。
- 前記比較器(19)が電圧比較器であり、前記可変電気量と前記基準電気量が電圧である、請求項1〜5のいずれか一項に記載の遅延発生器。
- 所与の遅延Tを得ることを可能にするR0の値が式:
Rは時間tにおけるPCM物質の抵抗値、
R0は初期時間t0における前記PCM物質の抵抗値、
νは使用される前記カルコゲナイドに依存する定数である、請求項1〜7のいずれか一項に記載の遅延発生器。 - 使用される前記カルコゲナイドがゲルマニウム、アンチモン、及びテルルの混合物である、請求項1〜8のいずれか一項に記載の遅延発生器。
- 使用される前記カルコゲナイドがGe2Sb2Te5である、請求項9に記載の遅延発生器。
- ニューラルネットワーク(20)を含む人工神経細胞を抑制するシステムであって、その経過後に前記ニューラルネットワークの出力が利用できるようになる時間が、請求項1〜10のいずれか一項に記載の遅延発生器(22)による制御(21)を受けるシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1155698 | 2011-06-27 | ||
FR1155698A FR2977077B1 (fr) | 2011-06-27 | 2011-06-27 | Generateur de retards utilisant une resistance programmable a base de materiau a changement de phase |
Publications (2)
Publication Number | Publication Date |
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JP2013013081A JP2013013081A (ja) | 2013-01-17 |
JP5919607B2 true JP5919607B2 (ja) | 2016-05-18 |
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JP2012143199A Expired - Fee Related JP5919607B2 (ja) | 2011-06-27 | 2012-06-26 | 相変化物質に基づくプログラマブル抵抗を用いた遅延発生器 |
Country Status (4)
Country | Link |
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US (1) | US9015094B2 (ja) |
EP (1) | EP2541770B1 (ja) |
JP (1) | JP5919607B2 (ja) |
FR (1) | FR2977077B1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2996029B1 (fr) * | 2012-09-26 | 2018-02-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Systeme neuromorphique exploitant les caracteristiques intrinseque de cellules de memoire |
CN103580668B (zh) * | 2013-10-28 | 2016-04-20 | 华中科技大学 | 一种基于忆阻器的联想记忆电路 |
DE102014202107A1 (de) * | 2014-02-05 | 2015-08-06 | Martin Salinga | Vorrichtung zur Auswertung eines Zeitintervalls zwischen zwei Anregungen |
CN103943144B (zh) * | 2014-04-30 | 2017-07-11 | 中国科学院上海微系统与信息技术研究所 | 参考电阻优化的相变存储器读电路及参考电阻优选方法 |
KR102255309B1 (ko) * | 2014-10-17 | 2021-05-25 | 삼성전자주식회사 | 3차원 구조의 인공 뉴런 반도체 소자 및 이를 이용한 인공 뉴런 반도체 시스템 |
US9547819B1 (en) | 2015-11-23 | 2017-01-17 | International Business Machines Corporation | Phase-change material time-delay element for neuromorphic networks |
US10713562B2 (en) * | 2016-06-18 | 2020-07-14 | International Business Machines Corporation | Neuromorphic memory circuit |
US10528865B2 (en) * | 2016-06-21 | 2020-01-07 | International Business Machines Corporation | System to duplicate neuromorphic core functionality |
KR102608887B1 (ko) * | 2016-08-10 | 2023-12-04 | 에스케이하이닉스 주식회사 | 반도체 장치 |
US11138500B1 (en) * | 2018-03-06 | 2021-10-05 | U.S. Government As Represented By The Director, National Security Agency | General purpose neural processor |
KR102115369B1 (ko) | 2018-10-16 | 2020-05-27 | 주식회사 성안테크 | 타이어 트레드 결함 검출장치 |
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JPS63312715A (ja) * | 1987-06-16 | 1988-12-21 | Toshiba Corp | 遅延回路 |
JP3702038B2 (ja) * | 1996-05-14 | 2005-10-05 | 株式会社ルネサステクノロジ | 遅延回路 |
JP2003085972A (ja) * | 2001-09-13 | 2003-03-20 | Toshiba Corp | タイマ回路及び半導体メモリ装置 |
US7085155B2 (en) * | 2003-03-10 | 2006-08-01 | Energy Conversion Devices, Inc. | Secured phase-change devices |
US6967344B2 (en) * | 2003-03-10 | 2005-11-22 | Energy Conversion Devices, Inc. | Multi-terminal chalcogenide switching devices |
US7186998B2 (en) * | 2003-03-10 | 2007-03-06 | Energy Conversion Devices, Inc. | Multi-terminal device having logic functional |
WO2004084228A1 (en) * | 2003-03-18 | 2004-09-30 | Kabushiki Kaisha Toshiba | Phase change memory device |
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JP4728055B2 (ja) * | 2005-06-24 | 2011-07-20 | エルピーダメモリ株式会社 | 人工神経回路 |
KR100764738B1 (ko) * | 2006-04-06 | 2007-10-09 | 삼성전자주식회사 | 향상된 신뢰성을 갖는 상변화 메모리 장치, 그것의 쓰기방법, 그리고 그것을 포함한 시스템 |
US7969769B2 (en) * | 2007-03-15 | 2011-06-28 | Ovonyx, Inc. | Multi-terminal chalcogenide logic circuits |
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WO2011074021A1 (en) * | 2009-12-18 | 2011-06-23 | Mattia Boniardi | Modified reset state for enhanced read margin of phase change memory |
US8605531B2 (en) * | 2011-06-20 | 2013-12-10 | Intel Corporation | Fast verify for phase change memory with switch |
-
2011
- 2011-06-27 FR FR1155698A patent/FR2977077B1/fr not_active Expired - Fee Related
-
2012
- 2012-06-22 US US13/531,226 patent/US9015094B2/en active Active
- 2012-06-26 EP EP12173611.0A patent/EP2541770B1/fr active Active
- 2012-06-26 JP JP2012143199A patent/JP5919607B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US20120330873A1 (en) | 2012-12-27 |
FR2977077A1 (fr) | 2012-12-28 |
EP2541770A1 (fr) | 2013-01-02 |
US9015094B2 (en) | 2015-04-21 |
FR2977077B1 (fr) | 2013-08-02 |
EP2541770B1 (fr) | 2014-04-23 |
JP2013013081A (ja) | 2013-01-17 |
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