JP5917480B2 - 静電センサ - Google Patents
静電センサ Download PDFInfo
- Publication number
- JP5917480B2 JP5917480B2 JP2013253955A JP2013253955A JP5917480B2 JP 5917480 B2 JP5917480 B2 JP 5917480B2 JP 2013253955 A JP2013253955 A JP 2013253955A JP 2013253955 A JP2013253955 A JP 2013253955A JP 5917480 B2 JP5917480 B2 JP 5917480B2
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- Japan
- Prior art keywords
- layer
- protective layer
- conductive layer
- connection
- pattern
- Prior art date
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- 239000010410 layer Substances 0.000 claims description 179
- 239000011241 protective layer Substances 0.000 claims description 76
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 63
- 229910052759 nickel Inorganic materials 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 description 59
- 238000000034 method Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 31
- 239000000463 material Substances 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000000243 solution Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000956 alloy Substances 0.000 description 6
- 229910003336 CuNi Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000570 Cupronickel Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Human Computer Interaction (AREA)
- Ceramic Engineering (AREA)
- Position Input By Displaying (AREA)
- Laminated Bodies (AREA)
Description
(1)透明電極層31上に、電気抵抗の低い接続層32、導電層33、保護層34を積層し、特に抵抗の低い導電層33を形成したことにより、配線パターン16の配線抵抗を低減することができ、また、それぞれの配線パターン16の長さの差異による配線抵抗の差異をより小さくすることができる。
<実施例1>
実施例1においては、以下の条件で配線パターン16を形成した。実施例1は、保護層34より接続層32の方がニッケルの含有率が高く、接続層32の膜厚は保護層34の膜厚の4倍になっている。
透明電極層31:ITO、膜厚25nm
接続層32:CuNi、膜厚40nm、Niの含有率25%
導電層33:Cu、膜厚120nm
保護層34:CuNi、膜厚10nm、Niの含有率15%
レジスト40:ノボラック樹脂を使用
エッチング液:硫酸系エッチング液又は塩化鉄水溶液
エッチング時間:1〜3分程度
温度:常温
エッチング液:硫酸・硝酸の混合液又は塩酸系エッチング液
エッチング時間:1〜3分程度
温度:常温
剥離液:NMP(N−メチル−2−ピロリドン)
実施例2においては、以下の条件で配線パターン16を形成した。実施例2は、接続層32と保護層34のニッケル含有率が同一であり、接続層32と保護層34の膜厚の関係は実施例1と同じである。
基材20、透明電極層31、導電層33、保護層34、レジスト40については、実施例1と同じ材料を用いた。
図4は、比較例1に係る静電センサの配線パターン116の製造工程を示す断面図である。
保護層134:CuNi、膜厚30nm、Niの含有率25%
基材120、透明電極層131、導電層133、レジスト140については、実施例1の基材20、透明電極層31、導電層33、レジスト40とそれぞれ同じ材料を用いた。
13 X電極パターン
13a 幅広電極部
14 Y電極パターン
14a 幅広電極部
16 配線パターン
20 基材
31 透明電極層
32 接続層
33 導電層
34 保護層
Claims (1)
- 電極パターンと、前記電極パターンに電気的に接続された配線パターンとが基材の表面に形成された静電センサであって、
少なくとも前記配線パターンが、
前記基材上に形成された透明電極層と、
前記透明電極層上に形成され、銅とニッケルを含む接続層と、
前記接続層上に形成され、前記接続層よりも銅の含有率の高い導電層と、
前記導電層上に形成され、銅とニッケルを含む保護層とを備え、
前記接続層の膜厚は、前記保護層の膜厚の2倍よりも大きく、
前記保護層におけるニッケルの含有率は前記導電層におけるニッケルの含有率よりも大きく、
前記接続層におけるニッケルの含有率は前記保護層におけるニッケルの含有率よりも大きく、前記保護層におけるニッケルの含有率は0.1wt%以上15wt%未満であり、
前記導電層の方が前記保護層よりも厚く、
前記透明電極層および前記接続層の幅は、前記導電層および前記保護層の幅よりも大きいことを特徴とする静電センサ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013253955A JP5917480B2 (ja) | 2013-12-09 | 2013-12-09 | 静電センサ |
KR1020140168271A KR101642600B1 (ko) | 2013-12-09 | 2014-11-28 | 정전 센서 |
CN201420770414.8U CN204302942U (zh) | 2013-12-09 | 2014-12-09 | 静电传感器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013253955A JP5917480B2 (ja) | 2013-12-09 | 2013-12-09 | 静電センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015114690A JP2015114690A (ja) | 2015-06-22 |
JP5917480B2 true JP5917480B2 (ja) | 2016-05-18 |
Family
ID=53108470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013253955A Active JP5917480B2 (ja) | 2013-12-09 | 2013-12-09 | 静電センサ |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5917480B2 (ja) |
KR (1) | KR101642600B1 (ja) |
CN (1) | CN204302942U (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6531596B2 (ja) * | 2015-09-28 | 2019-06-19 | 住友金属鉱山株式会社 | 積層体基板、導電性基板、積層体基板の製造方法、導電性基板の製造方法 |
JP7049759B2 (ja) * | 2016-07-12 | 2022-04-07 | 住友金属鉱山株式会社 | 積層体基板、導電性基板、積層体基板の製造方法、導電性基板の製造方法 |
US20240047694A1 (en) * | 2021-01-20 | 2024-02-08 | Tdk Corporation | Layered body, negative electrode current collector for lithium ion secondary battery, and negative electrode for lithium ion secondary battery |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4934456B2 (ja) * | 2006-02-20 | 2012-05-16 | 古河電気工業株式会社 | めっき材料および前記めっき材料が用いられた電気電子部品 |
KR101161239B1 (ko) * | 2010-03-25 | 2012-07-02 | 박준영 | 터치패널용 패드 및 이를 이용한 터치패널 |
CN102870072B (zh) * | 2010-07-14 | 2015-03-25 | 阿尔卑斯电气株式会社 | 输入装置及其制造方法 |
JP5473990B2 (ja) * | 2011-06-17 | 2014-04-16 | 日東電工株式会社 | 導電性積層体、パターン配線付き透明導電性積層体、および光学デバイス。 |
TWI537400B (zh) * | 2011-12-06 | 2016-06-11 | 神戶製鋼所股份有限公司 | 觸控面板感測器用銅合金配線膜及其之製造方法、以及觸控面板感測器、以及濺鍍靶 |
JP5846953B2 (ja) | 2012-02-15 | 2016-01-20 | アルプス電気株式会社 | 入力装置及びその製造方法 |
JP5364186B2 (ja) * | 2012-02-27 | 2013-12-11 | 積水ナノコートテクノロジー株式会社 | 金属層付き導電性フィルム、その製造方法及びそれを含有するタッチパネル |
JP5918614B2 (ja) * | 2012-04-24 | 2016-05-18 | グンゼ株式会社 | 導電性基板、タッチパネル、および導電性基板の製造方法 |
-
2013
- 2013-12-09 JP JP2013253955A patent/JP5917480B2/ja active Active
-
2014
- 2014-11-28 KR KR1020140168271A patent/KR101642600B1/ko active IP Right Grant
- 2014-12-09 CN CN201420770414.8U patent/CN204302942U/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2015114690A (ja) | 2015-06-22 |
KR20150067028A (ko) | 2015-06-17 |
KR101642600B1 (ko) | 2016-07-25 |
CN204302942U (zh) | 2015-04-29 |
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