JP5902469B2 - 照明装置の作製方法 - Google Patents
照明装置の作製方法 Download PDFInfo
- Publication number
- JP5902469B2 JP5902469B2 JP2011282868A JP2011282868A JP5902469B2 JP 5902469 B2 JP5902469 B2 JP 5902469B2 JP 2011282868 A JP2011282868 A JP 2011282868A JP 2011282868 A JP2011282868 A JP 2011282868A JP 5902469 B2 JP5902469 B2 JP 5902469B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- electrode
- referred
- abbreviation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/86—Series electrical configurations of multiple OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011282868A JP5902469B2 (ja) | 2010-12-28 | 2011-12-26 | 照明装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010293534 | 2010-12-28 | ||
| JP2010293534 | 2010-12-28 | ||
| JP2011282868A JP5902469B2 (ja) | 2010-12-28 | 2011-12-26 | 照明装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012151104A JP2012151104A (ja) | 2012-08-09 |
| JP2012151104A5 JP2012151104A5 (enExample) | 2015-01-15 |
| JP5902469B2 true JP5902469B2 (ja) | 2016-04-13 |
Family
ID=46317681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011282868A Expired - Fee Related JP5902469B2 (ja) | 2010-12-28 | 2011-12-26 | 照明装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8557614B2 (enExample) |
| JP (1) | JP5902469B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104756274B (zh) * | 2012-09-18 | 2017-06-09 | 荷兰应用自然科学研究组织Tno | 电光器件堆叠体 |
| KR101981252B1 (ko) * | 2013-01-14 | 2019-05-23 | 삼성디스플레이 주식회사 | 쇼트 불량 리페어 방법, 상기 리페어 방법에 의해 제조된 표시 장치 및 유기 발광 표시 장치 |
| KR102047922B1 (ko) * | 2013-02-07 | 2019-11-25 | 삼성디스플레이 주식회사 | 플렉서블 기판, 플렉서블 기판의 제조 방법, 플렉서블 표시 장치, 및 플렉서블 표시 장치 제조 방법 |
| KR101946905B1 (ko) * | 2014-05-13 | 2019-04-22 | 엘지디스플레이 주식회사 | 유기발광소자 |
| JP2017069030A (ja) | 2015-09-30 | 2017-04-06 | 住友化学株式会社 | 有機el素子の製造方法 |
| JP2018170129A (ja) * | 2017-03-29 | 2018-11-01 | 株式会社ジャパンディスプレイ | 表示装置、及び表示装置の製造方法 |
| CN110459578B (zh) * | 2019-08-21 | 2022-06-10 | 合肥鑫晟光电科技有限公司 | 显示基板及其制备方法和修复方法、显示装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU594359B2 (en) | 1985-08-24 | 1990-03-08 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same |
| AU583423B2 (en) | 1985-09-21 | 1989-04-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same |
| KR900006772B1 (ko) | 1985-11-06 | 1990-09-21 | 세미콘닥터 에너지 라보라토리 컴파니 리미티드 | 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법 |
| US4749454A (en) * | 1986-11-17 | 1988-06-07 | Solarex Corporation | Method of removing electrical shorts and shunts from a thin-film semiconductor device |
| US6909111B2 (en) * | 2000-12-28 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light emitting device and thin film forming apparatus |
| US6809023B2 (en) | 2001-04-06 | 2004-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device having uniform crystal grains in a crystalline semiconductor film |
| JP2002343567A (ja) * | 2001-05-22 | 2002-11-29 | Canon Inc | 有機el素子、露光装置、発光装置の製造方法 |
| JP4593019B2 (ja) * | 2001-06-25 | 2010-12-08 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2003017262A (ja) | 2001-07-04 | 2003-01-17 | Dainippon Printing Co Ltd | 絶縁材料によってel層の成膜欠陥が被覆されたel素子とその製造方法 |
| WO2004112440A1 (ja) * | 2003-06-13 | 2004-12-23 | Matsushita Electric Industrial Co., Ltd. | 発光素子及びその製造方法、表示装置 |
| JP2006221982A (ja) * | 2005-02-10 | 2006-08-24 | Toshiba Matsushita Display Technology Co Ltd | アレイ基板の製造方法及び有機el表示装置の製造方法 |
| US7851989B2 (en) * | 2005-03-25 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2006323032A (ja) * | 2005-05-17 | 2006-11-30 | Sony Corp | フラットパネルディスプレイディバイスの欠陥画素リペア装置及びその欠陥画素リペア方法 |
| US8062085B2 (en) * | 2007-03-23 | 2011-11-22 | Canon Kabushiki Kaisha | Method of producing organic light emitting device |
| JP2008268880A (ja) * | 2007-03-23 | 2008-11-06 | Canon Inc | 有機発光装置の製造方法 |
| JP2009027037A (ja) * | 2007-07-20 | 2009-02-05 | Fujifilm Corp | 表示装置及び欠陥画素のリペア方法 |
| EP2075850A3 (en) * | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Photoelectric conversion device and manufacturing method thereof |
| CN102210193B (zh) * | 2009-02-10 | 2014-12-10 | 松下电器产业株式会社 | 有机电致发光显示器及其制造方法 |
| EP2404336A2 (en) * | 2009-03-05 | 2012-01-11 | Koninklijke Philips Electronics N.V. | Oleds connected in series |
| WO2011013493A1 (en) | 2009-07-28 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Inspection method and manufacturing method of light-emitting device |
-
2011
- 2011-12-23 US US13/336,356 patent/US8557614B2/en not_active Expired - Fee Related
- 2011-12-26 JP JP2011282868A patent/JP5902469B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20120164761A1 (en) | 2012-06-28 |
| JP2012151104A (ja) | 2012-08-09 |
| US8557614B2 (en) | 2013-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9882165B2 (en) | Light-emitting device and lighting device | |
| JP5969216B2 (ja) | 発光素子、表示装置、照明装置、及びこれらの作製方法 | |
| US8928018B2 (en) | Light-emitting device and manufacturing method thereof, lighting device, and display device | |
| JP6412548B2 (ja) | 発光装置 | |
| JP5820295B2 (ja) | 照明装置 | |
| JP5970198B2 (ja) | 照明装置 | |
| US9905632B2 (en) | Light-emitting unit, light-emitting device, and lighting device | |
| JP5902469B2 (ja) | 照明装置の作製方法 | |
| US8932097B2 (en) | Insulating pattern, method of forming the insulating pattern, light-emitting device, method of manufacturing the light-emitting device, and lighting device | |
| JP6093423B2 (ja) | 発光装置、照明装置および発光装置の作製方法 | |
| JP5860677B2 (ja) | 発光素子、発光素子の作製方法、及び照明装置 | |
| JP6250019B2 (ja) | 発光装置 | |
| US8878223B2 (en) | Light emitting device and method for manufacturing thereof | |
| US8624284B2 (en) | Light-emitting device and lighting device | |
| US20120175244A1 (en) | Film Formation Apparatus and Manufacturing Apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141124 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141124 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150819 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150825 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150929 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160301 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160310 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5902469 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |