JP5895971B2 - 太陽電池、及び太陽電池の製造方法 - Google Patents
太陽電池、及び太陽電池の製造方法 Download PDFInfo
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- G—PHYSICS
- G04—HOROLOGY
- G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
- G04C10/00—Arrangements of electric power supplies in time pieces
- G04C10/02—Arrangements of electric power supplies in time pieces the power supply being a radioactive or photovoltaic source
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本発明の一側面においては、C 1 が83〜96%であってよい。
図1a及び2に示すように、本実施形態に係る太陽電池200は、シート状である。太陽電池200は、第一硬化樹脂層40と、第一硬化樹脂層40の一部又は全体に重なる基板10と、基板10の一部又は全体に重なる光電変換層100と、光電変換層100の一部又は全体に重なる第二硬化樹脂層9(保護層)と、を備える。基板10はフィルム状であり、樹脂を含む。
C={1−(i×iS/iS0)/i0}×100 (1)
式1中、i0とは、硬化樹脂の前駆体である未反応のモノマー(全く硬化していない樹脂)の赤外分光スペクトルの波数wにおける強度である。iS0とは、未反応のモノマーの赤外分光スペクトルの波数wSにおける強度であり、樹脂の硬化(硬化反応)の前後において略一定である強度である。つまり、波数wSとは、モノマーの分子構造のうち硬化反応によって変化しない部分に由来する。iとは、硬化度が未知である樹脂(硬化度が特定されるべき試料)の赤外分光スペクトルの波数wにおける強度である。iSとは、硬化度が未知である樹脂の赤外分光スペクトルの波数wSにおける強度である。波数wSは、モノマーの分子構造のうち硬化反応によって変化しない部分に由来するため、理論的には硬化樹脂のiSはモノマーのiS0と略等しくなる。ただし、実際の測定では、硬化度のみならず他の種々の要因も赤外分光スペクトルに影響するので、測定毎に赤外分光スペクトルの強度が異なる。そのため、iSの測定値は必ずしもiS0の測定値と一致せず、測定値i及びi0の比(i/i0)は、硬化度のみならず他の要因によって影響され得る。したがって、測定値i及びi0に基づき正確な硬化度Cを算出するためには、iを標準化して、硬化度以外の要因に起因する硬化度の誤差を補正する必要がある。このような理由から、iS/iS0を補正係数としてiに乗じて強度iを標準化して、標準化されたi(つまり、i×iS/iS0)とi0とを比較することで、硬化度Cを求める。i0は、未反応のモノマーの赤外分光スペクトルの波数wにおける強度から、スペクトル全体のベースラインの強度を引いた補正値であってよい。iS0は、未反応のモノマーの赤外分光スペクトルの波数wSにおける強度から、スペクトル全体のベースラインの強度を引いた補正値であってよい。iは、硬化度が未知である樹脂の赤外分光スペクトルの波数wにおける強度から、スペクトル全体のベースラインの強度を引いた補正値であってよい。i0は、硬化度が未知である樹脂の赤外分光スペクトルの波数wSにおける強度から、スペクトル全体のベースラインの強度を引いた補正値であってよい。
σ=Δt×CTE×Y×T (2)
式2中、σは、内部応力である。Δtは、硬化樹脂層の温度変化量(t2−t1)である。CTEは、硬化樹脂層に含まれる樹脂の線膨張係数である。Yは、硬化樹脂層のヤング率(弾性率)である。Tは、硬化樹脂層の厚さである。
図3aに示すように、本実施形態に係る太陽電池200の製造方法では、まず光電変換層100を基板10上に形成する。光電変換層100の形成には、プラズマCVD、又はスパッタリングを用いるため、光電変換層100と基板10との間に温度差が生じ、基板10を圧縮する応力が生じる。その結果、図3aに示す光電変換層100及び基板10からなる積層体では、光電変換層100の表面が凸状に反ることがある。
[光電変換層の形成]
以下の手順で、図2に示す光電変換層100を、シート状の基板10の表面全体に形成した。
γ−ブチロラクトン100質量部及びブチルセロソルブアセテート50質量部を混合して溶剤を調製した。この溶剤を攪拌しながら、溶剤150質量部に対して、飽和ポリエステル樹脂(熱硬化樹脂)100質量部を加えた。飽和ポリエステル樹脂として、東洋紡社製のバイロン200を用いた。飽和ポリエステル樹脂が完全に溶剤に溶解した後、溶剤を攪拌しながら、消泡剤2.5質量部と架橋アクリルビーズ50質量部とを溶剤に加えた。架橋アクリルビーズとしては、根上工業社製のJ−4PYを用いた。架橋アクリルビーズの平均粒径は2.2μmであった。
以下の成分を含む樹脂の混合物を調製した。
3’,4’−エポキシシクロヘキシルメチル(紫外線硬化型樹脂) 50質量部(株式会社ダイセル製のセロキサイドCEL2021P)。
オキセタン(紫外線硬化型樹脂) 50質量部(東亜合成株式会社製のOXT−221)。
光重合開始剤 2質量部(BASF社製のIRGACURE290)。
実施例2、3及び比較例5では、UV積算光量を下記表1に示す値に調整した。実施例2、3及び比較例5では、紫外線の照射時における前駆体層の表面温度は、下記の表1に示す値であった。これらの事項以外は実施例1と同様の方法で、実施例2、3及び比較例5其々の太陽電池を作製した。実施例2、3及び比較例5其々の太陽電池も、実施例1の同様に、第一硬化樹脂層と、第一硬化樹脂層に重なる基板と、基板に重なる光電変換層と、光電変換層に重なる第二硬化樹脂層と、を備えるものであった。
比較例1〜4では、ヒートシンクを用いることなく、第一硬化樹脂層を形成した。比較例1〜4では、UV積算光量を下記表1に示す値に調整した。比較例1〜4では、紫外線の照射時における前駆体層の表面温度は、下記の表1に示す値であった。これらの事項以外は実施例1と同様の方法で、比較例1〜4其々の太陽電池を作製した。比較例1〜4其々の太陽電池も、実施例1の同様に、第一硬化樹脂層と、第一硬化樹脂層に重なる基板と、基板に重なる光電変換層と、光電変換層に重なる第二硬化樹脂層と、を備えるものであった。
以下の方法により、実施例1の基板10に対向する第一硬化樹脂層40の第一表面40a側の硬化度(C1)、第一表面40aの反対側にある第一硬化樹脂層40の第二表面40b側の硬化度(C2)、及び硬化度の差(C2−C1)を求めた。
各実施例及び各比較例の第一硬化樹脂層の外観を目視で評価した。評価結果を下記表1に示す。全実施例並びに比較例2及び3其々の第一硬化樹脂層の外観に欠陥はなかった。比較例1の第一硬化樹脂層は歪んでいた。比較例4及び5其々の第一硬化樹脂層には皺があった。
実施例1の太陽電池を、第二硬化樹脂層(太陽電池の受光面)を上に向けた状態で、熱機械分析装置内に設置した。熱機械分析装置内の相対湿度(RH)を50%に調整し、熱機械分析装置内の温度を25℃に調整し、太陽電池を熱機械分析装置内に1時間放置した。放置直後の太陽電池の形状を目視で観察した。
Claims (7)
- シート状の太陽電池であって、
第一硬化樹脂層と、
前記第一硬化樹脂層に重なり、樹脂を含む基板と、
前記基板に重なる光電変換層と、
前記光電変換層に重なる第二硬化樹脂層と、
を備え、
前記第一硬化樹脂層に含まれる硬化樹脂の線膨張係数が、前記第二硬化樹脂層に含まれる硬化樹脂の線膨張係数以上であり、
前記第二硬化樹脂層に含まれる前記硬化樹脂の前記線膨張係数が、前記基板に含まれる前記樹脂の線膨張係数よりも大きく、
前記基板に対向する前記第一硬化樹脂層の第一表面側の硬化度が、C1%であり、前記第一表面の反対側にある前記第一硬化樹脂層の第二表面側の硬化度が、C2%であるとき、C2はC1よりも大きく、(C2−C1)が2〜15%であり、
前記太陽電池の前記第一硬化樹脂層側の表面が、凸状に反っており、
前記太陽電池の前記第二硬化樹脂層側の表面が、凹状に反っている、
太陽電池。 - 前記第一硬化樹脂層の厚さが、5〜50μmであり、
前記第二硬化樹脂層の厚さが、3〜30μmである、
請求項1に記載の太陽電池。 - 前記第一硬化樹脂層が、紫外線硬化型エポキシ樹脂から形成されている、
請求項1又は2に記載の太陽電池。 - 前記第一硬化樹脂層の内部応力が、前記第二硬化樹脂層の内部応力よりも大きい、
請求項1〜3のいずれか一項に記載の太陽電池。 - 前記第一硬化樹脂層が、前記第二硬化樹脂層よりも厚い、
請求項1〜4のいずれか一項に記載の太陽電池。 - 前記C 1 が83〜96%である、
請求項1〜5のいずれか一項に記載の太陽電池。 - 請求項1〜6のいずれか一項に記載の太陽電池の製造方法であって、
前記光電変換層を前記基板上に形成する工程と、
前記第二硬化樹脂層を前記光電変換層上に形成する工程と、
前記光電変換層の反対側に位置する前記基板の表面に紫外線硬化型樹脂を付着させて、前記第二硬化樹脂層にヒートシンクを接触させた状態で前記紫外線硬化型樹脂に紫外線を照射することにより、前記第一硬化樹脂層を形成する工程と、
を備える、
太陽電池の製造方法。
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