JP5885971B2 - 銅および銅合金のエッチング液 - Google Patents

銅および銅合金のエッチング液 Download PDF

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Publication number
JP5885971B2
JP5885971B2 JP2011196394A JP2011196394A JP5885971B2 JP 5885971 B2 JP5885971 B2 JP 5885971B2 JP 2011196394 A JP2011196394 A JP 2011196394A JP 2011196394 A JP2011196394 A JP 2011196394A JP 5885971 B2 JP5885971 B2 JP 5885971B2
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JP
Japan
Prior art keywords
copper
etching
copper alloy
solution
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011196394A
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English (en)
Japanese (ja)
Other versions
JP2013058629A5 (enExample
JP2013058629A (ja
Inventor
高橋　秀樹
秀樹 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Chemical Co Inc
Original Assignee
Kanto Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Chemical Co Inc filed Critical Kanto Chemical Co Inc
Priority to JP2011196394A priority Critical patent/JP5885971B2/ja
Priority to SG2012065843A priority patent/SG188734A1/en
Priority to KR1020120099231A priority patent/KR20130028014A/ko
Priority to TW101132768A priority patent/TW201323661A/zh
Priority to CN2012103305021A priority patent/CN102995021A/zh
Publication of JP2013058629A publication Critical patent/JP2013058629A/ja
Publication of JP2013058629A5 publication Critical patent/JP2013058629A5/ja
Application granted granted Critical
Publication of JP5885971B2 publication Critical patent/JP5885971B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • ing And Chemical Polishing (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2011196394A 2011-09-08 2011-09-08 銅および銅合金のエッチング液 Expired - Fee Related JP5885971B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011196394A JP5885971B2 (ja) 2011-09-08 2011-09-08 銅および銅合金のエッチング液
SG2012065843A SG188734A1 (en) 2011-09-08 2012-09-05 Etching solution for copper and copper alloy
KR1020120099231A KR20130028014A (ko) 2011-09-08 2012-09-07 구리 및 구리 합금의 에칭액
TW101132768A TW201323661A (zh) 2011-09-08 2012-09-07 銅和銅合金的蝕刻液
CN2012103305021A CN102995021A (zh) 2011-09-08 2012-09-07 铜及铜合金的蚀刻液组合物及蚀刻方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011196394A JP5885971B2 (ja) 2011-09-08 2011-09-08 銅および銅合金のエッチング液

Publications (3)

Publication Number Publication Date
JP2013058629A JP2013058629A (ja) 2013-03-28
JP2013058629A5 JP2013058629A5 (enExample) 2014-09-18
JP5885971B2 true JP5885971B2 (ja) 2016-03-16

Family

ID=47924114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011196394A Expired - Fee Related JP5885971B2 (ja) 2011-09-08 2011-09-08 銅および銅合金のエッチング液

Country Status (5)

Country Link
JP (1) JP5885971B2 (enExample)
KR (1) KR20130028014A (enExample)
CN (1) CN102995021A (enExample)
SG (1) SG188734A1 (enExample)
TW (1) TW201323661A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6777420B2 (ja) * 2016-04-21 2020-10-28 関東化学株式会社 単層膜または積層膜のエッチング組成物または前記組成物を用いたエッチング方法
CN105887092B (zh) * 2016-04-28 2019-01-15 华南理工大学 一种适用于臭氧回收法的pcb酸性蚀刻液
JP7333755B2 (ja) * 2018-01-05 2023-08-25 株式会社Adeka エッチング液組成物及びエッチング方法
KR102205628B1 (ko) 2019-02-12 2021-01-21 김진호 구리 또는 구리 함유 금속막 식각액 조성물
CN110093606A (zh) * 2019-06-14 2019-08-06 大连亚太电子有限公司 一种用于pcb板的蚀刻液及其制作方法
CN110938822A (zh) * 2019-11-14 2020-03-31 浙江工业大学 一种钼/铜复合金属层的蚀刻液、蚀刻方法与应用
CN111041489B (zh) * 2020-01-03 2021-10-15 易安爱富(武汉)科技有限公司 一种钼/钛合金薄膜蚀刻液组合物及其应用
WO2021251204A1 (ja) * 2020-06-08 2021-12-16 三菱瓦斯化学株式会社 銅または銅合金の表面処理に用いられる化学研磨液および表面処理方法
CN111809183B (zh) * 2020-07-14 2022-08-09 北京航空航天大学宁波创新研究院 一种铜镓合金的金相腐蚀液以及金相显示方法
CN112635553B (zh) * 2020-12-25 2022-09-16 广东省科学院半导体研究所 薄膜晶体管的制作方法和显示装置
JP7569252B2 (ja) * 2021-03-26 2024-10-17 花王株式会社 エッチング液組成物の保存方法
CN113667979A (zh) * 2021-08-05 2021-11-19 Tcl华星光电技术有限公司 铜钼金属蚀刻液及其应用
US12276033B2 (en) 2021-10-19 2025-04-15 Tokyo Electron Limited Methods for wet etching of noble metals
JP2024063315A (ja) * 2022-10-26 2024-05-13 関東化学株式会社 エッチング液組成物およびエッチング方法
WO2024107260A1 (en) * 2022-11-14 2024-05-23 Tokyo Electron Limited Methods for wet etching of noble metals
CN116573782B (zh) * 2023-04-03 2023-11-03 迁安市宏奥工贸有限公司 脱硫废液的处理方法
CN118186394B (zh) * 2024-05-16 2024-08-16 苏州高芯众科半导体有限公司 Tf液晶面板刻蚀腔铝板清洁再生的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4706081B2 (ja) * 2001-06-05 2011-06-22 メック株式会社 銅または銅合金のエッチング剤ならびにエッチング法
JP4069387B2 (ja) * 2003-08-27 2008-04-02 上村工業株式会社 エッチング液
JP4093147B2 (ja) * 2003-09-04 2008-06-04 三菱電機株式会社 エッチング液及びエッチング方法
US7442323B2 (en) * 2006-06-02 2008-10-28 E. I. Du Pont De Nemours And Company Potassium monopersulfate solutions
JP4973231B2 (ja) * 2006-09-05 2012-07-11 日立化成工業株式会社 銅のエッチング処理方法およびこの方法を用いてなる配線基板と半導体パッケージ
US20080224092A1 (en) * 2007-03-15 2008-09-18 Samsung Electronics Co., Ltd. Etchant for metal
KR101310310B1 (ko) * 2007-03-15 2013-09-23 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각액 조성물
US8518281B2 (en) * 2008-06-03 2013-08-27 Kesheng Feng Acid-resistance promoting composition
KR101520921B1 (ko) * 2008-11-07 2015-05-18 삼성디스플레이 주식회사 식각액 조성물, 이를 사용한 금속 패턴의 형성 방법 및 박막 트랜지스터 표시판의 제조 방법
JP5604056B2 (ja) * 2009-05-15 2014-10-08 関東化学株式会社 銅含有積層膜用エッチング液
CN101807572A (zh) * 2010-02-25 2010-08-18 友达光电股份有限公司 刻蚀液、主动组件阵列基板及其制作方法
KR20120066950A (ko) * 2010-12-15 2012-06-25 삼성전자주식회사 식각액, 이를 이용한 표시 장치 및 그 제조 방법

Also Published As

Publication number Publication date
TW201323661A (zh) 2013-06-16
KR20130028014A (ko) 2013-03-18
JP2013058629A (ja) 2013-03-28
SG188734A1 (en) 2013-04-30
CN102995021A (zh) 2013-03-27

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