JP5883861B2 - 第一及び第二半導体の混合物から成る有機半導体層の製造方法 - Google Patents
第一及び第二半導体の混合物から成る有機半導体層の製造方法 Download PDFInfo
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- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 16
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- FXMBKAAULHJRKL-UHFFFAOYSA-N [amino(dimethoxy)silyl]oxymethane Chemical compound CO[Si](N)(OC)OC FXMBKAAULHJRKL-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
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- MVPPADPHJFYWMZ-IDEBNGHGSA-N chlorobenzene Chemical group Cl[13C]1=[13CH][13CH]=[13CH][13CH]=[13CH]1 MVPPADPHJFYWMZ-IDEBNGHGSA-N 0.000 description 1
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- 238000011065 in-situ storage Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
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- 239000011859 microparticle Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32056—Deposition of conductive or semi-conductive organic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
12 透明基板
14 第一電極
16 注入層
18 活性層
20 第二電極
22 第一半導体材料の層
24 第二半導体材料の層
26 接触面
30 エマルジョン
32 多孔質層
34 PCBM溶液
38 有機半導体層
Claims (2)
- 第一及び第二有機半導体材料の混合物から形成される有機半導体層(38)の製造方法であって、
有効多孔率を備え、且つ前記第二半導体材料を受け入れ可能な、前記第一半導体材料から形成される多孔質固体体積(32)を形成する段階と、
前記第一半導体材料に対して不活性であり、且つ前記第二半導体材料の蒸発温度未満の蒸発温度を有する溶媒(A)中に溶解又は分散された前記第二半導体材料を含む液体(32)を少なくとも前記多孔質固体体積の外面上に堆積する段階と、
前記多孔質固体体積(32)が少なくとも部分的に前記液体で含浸されるとすぐに、前記溶媒の蒸発温度より高く、且つ前記第一及び前記第二半導体材料の蒸発温度未満の温度まで加熱することで前記溶媒(A)を蒸発させる段階と、を含み、
前記多孔質固体体積の形成が、溶媒中に溶解又は分散された前記第一半導体材料の溶液中へ気泡を導入するための気体を加える段階と、続く前記溶媒を蒸発させる段階とを含み、前記溶媒の蒸発温度が前記第一半導体材料の溶液中へ気泡を導入するための前記気体の蒸発温度未満であることを特徴とする製造方法。 - 前記第一半導体材料がP3HTであり、及び前記第二半導体材料がPCBMであることを特徴とする、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1055990A FR2963166B1 (fr) | 2010-07-22 | 2010-07-22 | Procede pour la fabrication d'une couche semi-conductrice organique constituee d'un melange d'un premier et d'un second materiaux semi-conducteurs |
FR1055990 | 2010-07-22 | ||
PCT/FR2011/051332 WO2012010759A1 (fr) | 2010-07-22 | 2011-06-10 | Procede pour la fabrication d'une couche semi-conductrice organique constituee d'un melange d'un premier et d'un second materiaux semi-conducteurs |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013539597A JP2013539597A (ja) | 2013-10-24 |
JP2013539597A5 JP2013539597A5 (ja) | 2015-09-10 |
JP5883861B2 true JP5883861B2 (ja) | 2016-03-15 |
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JP2013520177A Expired - Fee Related JP5883861B2 (ja) | 2010-07-22 | 2011-06-10 | 第一及び第二半導体の混合物から成る有機半導体層の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8951830B2 (ja) |
EP (1) | EP2596536B1 (ja) |
JP (1) | JP5883861B2 (ja) |
KR (1) | KR101894110B1 (ja) |
CN (1) | CN102959754A (ja) |
BR (1) | BR112012033070A2 (ja) |
FR (1) | FR2963166B1 (ja) |
WO (1) | WO2012010759A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681886B (zh) * | 2013-12-26 | 2017-09-22 | 中国科学院物理研究所 | 用于钙钛矿基薄膜太阳电池的支架层及其制备方法 |
CN108963080B (zh) * | 2018-07-07 | 2020-05-26 | 河南大学 | 一种多孔有机半导体薄膜的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US7605327B2 (en) * | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
DE102004021567A1 (de) * | 2004-05-03 | 2005-12-08 | Covion Organic Semiconductors Gmbh | Elektronische Vorrichtungen enthaltend organische Halbleiter |
GB2421353A (en) * | 2004-12-14 | 2006-06-21 | Cambridge Display Tech Ltd | Method of preparing opto-electronic device |
JP4972921B2 (ja) * | 2005-01-14 | 2012-07-11 | セイコーエプソン株式会社 | 光電変換素子の製造方法 |
JP2008060092A (ja) * | 2005-01-31 | 2008-03-13 | Sharp Corp | 光機能性膜およびその製造方法 |
FR2892563B1 (fr) * | 2005-10-25 | 2008-06-27 | Commissariat Energie Atomique | Reseau de nanofibrilles polymeriques pour cellules photovoltaiques |
DE102007000791A1 (de) * | 2007-09-28 | 2009-04-02 | Universität Köln | Verfahren zur Herstellung einer organischen Leuchtdiode oder einer organischen Solarzelle und hergestellte organische Leuchtdioden oder Solarzellen |
US20090194167A1 (en) * | 2008-02-05 | 2009-08-06 | Konarka Technologies, Inc. | Methods of Forming Photoactive Layer |
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2010
- 2010-07-22 FR FR1055990A patent/FR2963166B1/fr not_active Expired - Fee Related
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2011
- 2011-06-10 EP EP11735481.1A patent/EP2596536B1/fr active Active
- 2011-06-10 WO PCT/FR2011/051332 patent/WO2012010759A1/fr active Application Filing
- 2011-06-10 CN CN2011800315805A patent/CN102959754A/zh active Pending
- 2011-06-10 BR BR112012033070A patent/BR112012033070A2/pt not_active IP Right Cessation
- 2011-06-10 KR KR1020127033877A patent/KR101894110B1/ko active IP Right Grant
- 2011-06-10 JP JP2013520177A patent/JP5883861B2/ja not_active Expired - Fee Related
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2012
- 2012-12-13 US US13/713,435 patent/US8951830B2/en active Active
Also Published As
Publication number | Publication date |
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KR20130095653A (ko) | 2013-08-28 |
BR112012033070A2 (pt) | 2016-12-20 |
US20130092921A1 (en) | 2013-04-18 |
KR101894110B1 (ko) | 2018-08-31 |
US8951830B2 (en) | 2015-02-10 |
JP2013539597A (ja) | 2013-10-24 |
WO2012010759A1 (fr) | 2012-01-26 |
CN102959754A (zh) | 2013-03-06 |
FR2963166B1 (fr) | 2013-03-29 |
FR2963166A1 (fr) | 2012-01-27 |
EP2596536B1 (fr) | 2015-09-30 |
EP2596536A1 (fr) | 2013-05-29 |
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