JP5883571B2 - 電極箔および有機デバイス - Google Patents
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Description
前記グラフェン層に直接設けられる、有機EL層および/または有機太陽電池活性層からなる有機半導体層と、
前記有機半導体層上に設けられる、透明又は半透明の対向電極と、
を備えた、有機EL素子および/または有機太陽電池である、有機デバイスが提供される。
図1に本発明による電極箔の一例の模式断面図を示す。図1に示される電極箔10は、金属箔12と、金属箔12上に直接設けられるグラフェン層13とを備えてなる。
本発明による電極箔を電極として用いて、有機太陽電池等の有機デバイスを構築することができる。
金属箔として、厚さ64μmの市販の両面平坦電解銅箔(三井金属鉱業社製DFF(Dual Flat Foil)を用意した。銅箔表面の粗さを走査型プローブ顕微鏡(Veeco社製、Nano Scope V)を用いてJIS B 0601−2001に準拠して測定したところ、算術平均粗さRa:12.20nmであった。この測定は、10μm平方の範囲について、Tapping Mode AFMにて行った。
例1で作製された電極箔をアノードとして用いて、図2および図3に示されるような構造の有機太陽電池用有機デバイスを作製した。まず、厚さ0.1mm、幅2mmおよび長さ10mmの薄ガラスを2mm間隔で、5cm平方の電極箔20の上に並べて、電極箔20上の受光部となるべき個所を覆った。この状態のまま、窒化ケイ素からなる層間絶縁膜29をプラズマCVD法により形成した。このプラズマCVDは、メカニカルブースターポンプ(MBP)およびロータリーポンプ(RP)が接続されたプラズマCVD装置(PD−2202L、サムコ社製)を用い、成膜領域:直径8インチの有効領域、投入パワー(RF):250W(0.8W/cm2)、到達真空度:<5×10−3Pa、スパッタリング圧力:80Pa、雰囲気:SiH4(H2希釈10%):NH3:N2=100:10:200sccm、基板温度:250℃の条件で行った。その後、薄ガラスを電極箔22から除去した。次に、層間絶縁膜が形成された電極箔の表面を40〜50℃に加熱したイソプロピルアルコール溶液(以下IPA)で洗浄し、窒素ガス雰囲気下で乾燥させた。
Claims (10)
- 電解銅箔と、前記電解銅箔上に直接設けられるグラフェン層とを備え、
前記電解銅箔の前記グラフェン層側の表面が、JIS B 0601−2001に準拠して測定される、3nm以下の算術平均粗さRaを有する超平坦面である、電極箔。 - 有機デバイス素子の電極として用いられる、請求項1に記載の電極箔。
- 有機太陽電池の電極として用いられる、請求項1に記載の電極箔。
- 前記電解銅箔の前記グラフェン層側の表面が、JIS B 0601−2001に準拠して測定される、1.5nm以下の算術平均粗さRaを有する超平坦面である、請求項1〜3のいずれか一項に記載の電極箔。
- 前記電解銅箔が、1〜100μmの厚さを有する、請求項1〜4のいずれか一項に記載の電極箔。
- 前記グラフェン層は、5層以下のグラフェンの積層からなる、請求項1〜5のいずれか一項に記載の電極箔。
- 前記グラフェン層の表面が、JIS B 0601−2001に準拠して測定される、3nm以下の算術平均粗さRaを有する超平坦面である、請求項1〜6のいずれか一項に記載の電極箔。
- 請求項1〜7のいずれか一項に記載の電極箔と、
前記グラフェン層に直接設けられる、有機EL層および/または有機太陽電池活性層からなる有機半導体層と、
前記有機半導体層上に設けられる、透明又は半透明の対向電極と、
を備えた、有機EL素子および/または有機太陽電池である、有機デバイス。 - 前記有機半導体層が、50〜1000nmの厚さを有する、請求項8に記載の有機デバイス。
- 請求項8又は9に記載の有機デバイスを備えてなる、有機太陽電池。
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KR101237351B1 (ko) * | 2011-05-27 | 2013-03-04 | 포항공과대학교 산학협력단 | 전극 및 이를 포함한 전자 소자 |
CN103000817B (zh) * | 2012-11-29 | 2016-04-20 | 无锡格菲电子薄膜科技有限公司 | 一种柔性有机发光二极管 |
JP2014207321A (ja) * | 2013-04-12 | 2014-10-30 | 三菱化学株式会社 | 有機薄膜太陽電池素子 |
KR101487729B1 (ko) | 2013-07-03 | 2015-01-29 | 코닝정밀소재 주식회사 | 광전소자용 기판 및 이를 포함하는 광전소자 |
US20160284811A1 (en) * | 2013-11-04 | 2016-09-29 | Massachusetts Institute Of Technology | Electronics including graphene-based hybrid structures |
US20150136215A1 (en) * | 2013-11-21 | 2015-05-21 | Tsmc Solar Ltd. | Solar cell contacts and method of fabricating same |
JP2015179695A (ja) * | 2014-03-18 | 2015-10-08 | 国立研究開発法人科学技術振興機構 | 半導体素子の製造方法、半導体素子および透明導電膜 |
JP6663142B2 (ja) * | 2015-02-19 | 2020-03-11 | 国立研究開発法人産業技術総合研究所 | 有機エレクトロルミネセンス素子 |
KR102430705B1 (ko) | 2017-10-30 | 2022-08-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
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KR101344493B1 (ko) * | 2007-12-17 | 2013-12-24 | 삼성전자주식회사 | 단결정 그라펜 시트 및 그의 제조방법 |
JP5626948B2 (ja) * | 2008-10-08 | 2014-11-19 | 独立行政法人物質・材料研究機構 | グラフェン被覆部材の製造方法 |
JP5453045B2 (ja) * | 2008-11-26 | 2014-03-26 | 株式会社日立製作所 | グラフェン層が成長された基板およびそれを用いた電子・光集積回路装置 |
WO2011027585A1 (ja) * | 2009-09-04 | 2011-03-10 | 並木精密宝石株式会社 | グラフェン基板、グラフェン電子デバイス及びそれらの製造方法 |
JP4527194B1 (ja) * | 2009-12-11 | 2010-08-18 | エンパイア テクノロジー ディベロップメント エルエルシー | グラフェン構造体、グラフェン構造体の製造方法、及び電子デバイス |
JP2012025004A (ja) * | 2010-07-22 | 2012-02-09 | Seiko Epson Corp | グラフェンシート付き基材及びグラフェンシートの製造方法 |
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