JP5881053B2 - 太陽電池用基板の作製方法および太陽電池 - Google Patents
太陽電池用基板の作製方法および太陽電池 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 claims description 94
- 229910052710 silicon Inorganic materials 0.000 claims description 81
- 239000010703 silicon Substances 0.000 claims description 81
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 80
- 238000005530 etching Methods 0.000 claims description 41
- 238000005488 sandblasting Methods 0.000 claims description 23
- 239000006061 abrasive grain Substances 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 229910003460 diamond Inorganic materials 0.000 claims description 11
- 239000010432 diamond Substances 0.000 claims description 11
- 238000004381 surface treatment Methods 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 239000000243 solution Substances 0.000 description 32
- 238000002310 reflectometry Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Description
)にして、太陽電池表面における光の反射率を低下させ、かつ基板内での光路長を長くすることで入射した光を有効に基板内に閉じ込める(光閉じ込め)方法が広く用いられている。この場合、効率の向上という観点からは、シリコン基板の両面にテクスチャー構造が形成される必要はない。むしろ、基板の片面のみにテクスチャー構造が形成され、もう片方の面は、テクスチャー構造を形成した面よりも反射率の高い鏡面であることが望ましい(非特許文献1)。
前記第一の面と前記第二の面とが前記エッチング溶液により同時に表面処理が行われてもよい。
ヤーに固着させたものを用いる。なお、本実施形態で用いられるシリコンインゴットは、多結晶シリコンインゴットであるが、単結晶シリコンインゴットでもよい。
0%以上36%以下であることが求められる。反射率が28%未満であれば、遊離砥粒方
法でスライスしたアズスライス基板の表面反射率とあまり変わらなくなってしまう。一方、反射率の上限値は36%である。これは、波長600nmから800nmの範囲における鏡面の単結晶シリコン基板の反射率の最大値が、36%程度であることに起因する(Phys.Rev.,Vol.120,p.37(1960))。波長600nmから800nmの範囲における鏡面状態になっているシリコン基板の反射率の最大値が36%であるため、本実施形態に係るシリコン基板の表面反射率の上限値は36%である。
ーネットであることが望ましい。また、研磨剤の大きさは、粒度番号が400番から3000番の研磨剤の大きさであることが望ましい。更に、研磨剤を吹き付ける圧力は、0.2〜0.6MPaであることが望ましい。サンドブラスト処理の方式としては、研磨材を空
気、窒素などの気体と共に吹き付ける方式のほかに、研磨材と水とを混合させてそれを吹きつける方式でもよい。なお、サンドブラスト処理を行った面は、本発明の第一の面に相当する。
まり、片方の面はテクスチャー構造を有し、もう片方の面は、該テクスチャー構造を有する面よりも反射率の高い面を有する光閉じ込めに有効なシリコン基板を作製することができる。
00nmの範囲の光の波長に対する、固定砥粒方式でスライスした基板表面の反射率は32〜34%の範囲、遊離砥粒方式でスライスした基板表面の反射率は26〜27%の範囲である。よって、固定砥粒方式でスライスした基板の反射率は、その表面形状を反映して、遊離砥粒方式でスライスした基板より高くなっている。これより、固定砥粒方式では、適
当なスライス条件によって、遊離砥粒方法でスライスした基板表面よりもより高い反射率を有するシリコン基板が作成可能であることが示された。
5%反射率が高いことがわかった。
Claims (4)
- シリコンインゴットを、ダイヤモンド砥粒を含む固定砥粒ワイヤーでスライスすることで、アズスライス状態のシリコン基板を作成するスライス工程と、
前記スライス工程により作製されたアズスライス状態の前記シリコン基板の第一の面に対して、サンドブラスト処理による表面処理を行うサンドブラスト工程と、
前記サンドブラスト工程の後に、前記シリコン基板に対して、フッ酸、硝酸のいずれか1つ以上を含むエッチング溶液による表面処理を行う工程と、を含み、
前記スライス工程で作成される前記シリコン基板は、前記第一の面と、前記第一の面の反対側の面である第二の面とが、600nmから800nmの範囲の光の波長に対して、28%以上36%以下の反射率を有することを特徴とする
を含むことを特徴とする半導体基板の作製方法。 - 前記スライス工程が、電着、レジン、メタルまたはそれらの複合による方法によってダイヤモンド砥粒を金属ワイヤー表面に固着させた固定砥粒方式のワイヤーを用いたスライス工程であることを特徴とする請求項1に記載の半導体基板の作製方法。
- 前記エッチング溶液による表面処理を行う工程では、前記第一の面と前記第二の面とが前記エッチング溶液により同時に表面処理が行われることを特徴とする請求項1または2に記載の半導体基板の作製方法。
- 前記シリコンインゴットが多結晶シリコンであることを特徴とする請求項1から3のいずれか1項に記載の半導体基板の作製方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2011019092A JP5881053B2 (ja) | 2011-01-31 | 2011-01-31 | 太陽電池用基板の作製方法および太陽電池 |
PCT/JP2012/051783 WO2012105441A1 (ja) | 2011-01-31 | 2012-01-27 | 太陽電池用基板の作製方法および太陽電池 |
CN201280007026.8A CN103339738B (zh) | 2011-01-31 | 2012-01-27 | 太阳能电池用基板的制造方法和太阳能电池 |
US13/982,104 US20130306148A1 (en) | 2011-01-31 | 2012-01-27 | Method for fabricating substrate for solar cell and solar cell |
KR1020137018639A KR101662054B1 (ko) | 2011-01-31 | 2012-01-27 | 태양전지용 기판의 제작 방법 및 태양전지 |
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JP2011019092A JP5881053B2 (ja) | 2011-01-31 | 2011-01-31 | 太陽電池用基板の作製方法および太陽電池 |
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JP2012160568A JP2012160568A (ja) | 2012-08-23 |
JP5881053B2 true JP5881053B2 (ja) | 2016-03-09 |
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US (1) | US20130306148A1 (ja) |
JP (1) | JP5881053B2 (ja) |
KR (1) | KR101662054B1 (ja) |
CN (1) | CN103339738B (ja) |
WO (1) | WO2012105441A1 (ja) |
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JP5510935B2 (ja) * | 2011-09-27 | 2014-06-04 | Pvクリスタロックスソーラー株式会社 | 半導体ウェハの製造方法 |
CN103361738A (zh) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | 一种多晶硅太阳电池及太阳电池多晶硅片制绒方法 |
CN102832291A (zh) * | 2012-08-16 | 2012-12-19 | 常州天合光能有限公司 | 太阳能电池制绒方法 |
CN104218122B (zh) * | 2014-08-28 | 2016-08-17 | 奥特斯维能源(太仓)有限公司 | 一种降低金刚线切割的多晶硅反射率的制绒方法 |
CN105047764A (zh) * | 2015-09-01 | 2015-11-11 | 浙江晶科能源有限公司 | 一种硅片的制绒方法 |
CN105932078B (zh) * | 2016-01-15 | 2017-08-01 | 北京创世捷能机器人有限公司 | 一种金刚线切割的多晶硅片的制绒方法 |
CN107971933B (zh) * | 2016-10-21 | 2020-05-01 | 乐山新天源太阳能科技有限公司 | 一种多晶硅片表面金刚线切割损伤层的去除方法 |
CN106409983A (zh) * | 2016-11-30 | 2017-02-15 | 浙江晶科能源有限公司 | 一种金刚线切片的制绒方法 |
DE102017203977A1 (de) | 2017-03-10 | 2018-09-13 | Gebr. Schmid Gmbh | Verfahren zur Herstellung texturierter Wafer und Aufrausprühstrahlbehandlungsvorrichtung |
CN108807595B (zh) * | 2018-06-13 | 2020-02-14 | 苏州澳京光伏科技有限公司 | 一种低翘曲多晶硅太阳能电池用基板的制造方法 |
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JP3909913B2 (ja) * | 1997-04-28 | 2007-04-25 | 信越半導体株式会社 | 半導体シリコン単結晶インゴットの工程管理方法および工程管理システム |
US6376335B1 (en) * | 2000-02-17 | 2002-04-23 | Memc Electronic Materials, Inc. | Semiconductor wafer manufacturing process |
JP4340031B2 (ja) | 2001-09-26 | 2009-10-07 | 京セラ株式会社 | 太陽電池用基板の粗面化方法 |
JP4378485B2 (ja) * | 2004-01-20 | 2009-12-09 | 信越化学工業株式会社 | 太陽電池の製造方法 |
JP2005340643A (ja) * | 2004-05-28 | 2005-12-08 | Sharp Corp | 太陽電池用半導体基板の製造方法 |
JP2006108151A (ja) | 2004-09-30 | 2006-04-20 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハの製造方法 |
JP4766880B2 (ja) * | 2005-01-18 | 2011-09-07 | シャープ株式会社 | 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 |
WO2009041266A1 (ja) * | 2007-09-28 | 2009-04-02 | Sharp Kabushiki Kaisha | 太陽電池用ウエハの製造方法 |
KR20110003360A (ko) * | 2008-04-09 | 2011-01-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 방법 |
WO2010091087A1 (en) * | 2009-02-03 | 2010-08-12 | The Nanosteel Company, Inc. | Method and product for cutting materials |
CN102458768A (zh) * | 2009-06-05 | 2012-05-16 | 应用材料公司 | 用于制造磨料线的设备和方法 |
JP5509410B2 (ja) * | 2010-01-12 | 2014-06-04 | 株式会社ノリタケカンパニーリミテド | 太陽電池用シリコン基板の製造方法 |
JP2011238846A (ja) * | 2010-05-12 | 2011-11-24 | Mitsubishi Electric Corp | 太陽電池セルの製造方法 |
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- 2011-01-31 JP JP2011019092A patent/JP5881053B2/ja not_active Expired - Fee Related
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2012
- 2012-01-27 US US13/982,104 patent/US20130306148A1/en not_active Abandoned
- 2012-01-27 KR KR1020137018639A patent/KR101662054B1/ko active IP Right Grant
- 2012-01-27 WO PCT/JP2012/051783 patent/WO2012105441A1/ja active Application Filing
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KR20140014112A (ko) | 2014-02-05 |
CN103339738A (zh) | 2013-10-02 |
US20130306148A1 (en) | 2013-11-21 |
KR101662054B1 (ko) | 2016-10-04 |
CN103339738B (zh) | 2016-08-24 |
JP2012160568A (ja) | 2012-08-23 |
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