JP5866911B2 - 多チャネル光導波路型受光デバイス - Google Patents
多チャネル光導波路型受光デバイス Download PDFInfo
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- JP5866911B2 JP5866911B2 JP2011203724A JP2011203724A JP5866911B2 JP 5866911 B2 JP5866911 B2 JP 5866911B2 JP 2011203724 A JP2011203724 A JP 2011203724A JP 2011203724 A JP2011203724 A JP 2011203724A JP 5866911 B2 JP5866911 B2 JP 5866911B2
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- 239000003990 capacitor Substances 0.000 claims description 79
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- 239000012792 core layer Substances 0.000 description 11
- 230000010287 polarization Effects 0.000 description 11
- 238000005253 cladding Methods 0.000 description 6
- 230000001427 coherent effect Effects 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
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- 230000006866 deterioration Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/4279—Radio frequency signal propagation aspects of the electrical connection, high frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Optical Communication System (AREA)
Description
Claims (3)
- 四位相偏移変調方式によって変調された第1〜第4の信号成分を含む光信号を入力する入力ポートと、
前記入力ポートに光結合され、前記光信号を前記第1〜第4の信号成分に分岐する光分岐部と、
前記光分岐部から出力された前記第1〜第4の信号成分の光強度に応じた電気信号をそれぞれ生成する第1〜第4の受光素子部と、
前記第1〜第4の受光素子部それぞれにバイアス電圧を供給する第1〜第4の配線と、
前記バイアス電圧が供給される前記第1〜第4の受光素子部の電極と基準電位線との間に電気的に接続された第1〜第4のキャパシタと、
前記第1〜第4の受光素子部から出力された電気信号を増幅する信号増幅部とを備え、
前記光分岐部、前記第1〜第4の受光素子部、及び前記第1〜第4のキャパシタが、共通の光導波路基板に形成されており、
前記信号増幅部の第1〜第4の信号入力用電極が、前記光導波路基板の第1の方向に延びる一端縁に沿ってこの順で配置されており、
前記第1〜第4の受光素子部が前記光導波路基板において前記一端縁に沿ってこの順で配置されており、前記第1〜第4の受光素子部それぞれの信号出力用電極が、前記信号増幅部の前記第1〜第4の信号入力用電極と第1〜第4のボンディングワイヤそれぞれを介して電気的に接続されており、
前記第1〜第4のキャパシタそれぞれが、前記第1〜第4の受光素子部それぞれに対し前記第1の方向に並んで配置されており、
前記第1〜第4のキャパシタの基準電位側電極にそれぞれの一端が接続された第5〜第8のボンディングワイヤが前記第1〜第4のボンディングワイヤに沿って設けられており、該第5〜第8のボンディングワイヤの各他端が前記信号増幅部の第1〜第4の基準電位用電極に接続されており、
前記第1〜第4の配線が、前記第1〜第4のキャパシタのバイアス電圧側電極にそれぞれの一端が接続され、他端がバイアス電圧源に電気的に接続された第9〜第12のボンディングワイヤを含んでおり、
前記第1の方向と交差する第2の方向における前記第2及び第3のキャパシタの前記バイアス電圧側電極の先端と前記光導波路基板の前記一端縁との距離が、前記第1及び第4のキャパシタの前記バイアス電圧側電極の該第2の方向における先端と前記一端縁との距離よりも長い、ことを特徴とする多チャネル光導波路型受光デバイス。 - 前記第1及び第2の受光素子部が、前記第1の方向において前記第1のキャパシタと前記第2のキャパシタとの間に配置されており、
前記第3及び第4の受光素子部が、前記第1の方向において前記第3のキャパシタと前記第4のキャパシタとの間に配置されていることを特徴とする、請求項1に記載の多チャネル光導波路型受光デバイス。 - 前記第1〜第4のキャパシタそれぞれが、2層の金属層と、該2層の金属層間に挟まれた絶縁層とを有することを特徴とする、請求項1または2に記載の多チャネル光導波路型受光デバイス。
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JP2011203724A JP5866911B2 (ja) | 2011-09-16 | 2011-09-16 | 多チャネル光導波路型受光デバイス |
US13/609,591 US8811830B2 (en) | 2011-09-16 | 2012-09-11 | Multi-channel optical waveguide receiver |
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JP2011203724A JP5866911B2 (ja) | 2011-09-16 | 2011-09-16 | 多チャネル光導波路型受光デバイス |
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JP5866911B2 true JP5866911B2 (ja) | 2016-02-24 |
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Families Citing this family (15)
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JP2014027479A (ja) * | 2012-07-26 | 2014-02-06 | Seiko Instruments Inc | 光電変換装置 |
JP5968713B2 (ja) * | 2012-07-30 | 2016-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5920128B2 (ja) * | 2012-09-07 | 2016-05-18 | 住友電気工業株式会社 | 光導波路型受光素子の製造方法および光導波路型受光素子 |
JP6089953B2 (ja) * | 2013-05-17 | 2017-03-08 | 住友電気工業株式会社 | Iii−v化合物半導体素子を作製する方法 |
US9848782B2 (en) | 2014-02-13 | 2017-12-26 | Nec Corporation | Blood pressure estimation device, blood pressure estimation method, blood pressure measurement device, and recording medium |
US10072977B2 (en) | 2014-02-26 | 2018-09-11 | Nec Corporation | Optical module with capacitor and digital coherent receiver using the same |
JP2015162576A (ja) * | 2014-02-27 | 2015-09-07 | 住友電気工業株式会社 | 半導体光集積素子、半導体光集積素子を作製する方法 |
JP6364830B2 (ja) * | 2014-03-11 | 2018-08-01 | 住友電気工業株式会社 | 半導体光集積素子 |
JP6447045B2 (ja) * | 2014-11-20 | 2019-01-09 | 住友電気工業株式会社 | 光受信モジュール |
JP6798662B2 (ja) * | 2016-04-25 | 2020-12-09 | 住友電工デバイス・イノベーション株式会社 | コヒーレント光受信器の特性評価方法 |
JP6957825B2 (ja) * | 2017-03-03 | 2021-11-02 | 住友電工デバイス・イノベーション株式会社 | コヒーレント光通信用受光デバイス |
JP7037958B2 (ja) * | 2018-02-27 | 2022-03-17 | 住友電気工業株式会社 | 半導体光集積デバイス |
JP7003819B2 (ja) * | 2018-04-09 | 2022-01-21 | 富士通株式会社 | 光受信器 |
JP2020030333A (ja) * | 2018-08-23 | 2020-02-27 | 住友電工デバイス・イノベーション株式会社 | 光90°ハイブリッド素子 |
CN113924658B (zh) * | 2019-06-12 | 2023-09-05 | 三菱电机株式会社 | 光接收模块 |
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JPH05158096A (ja) * | 1991-12-09 | 1993-06-25 | Fujitsu Ltd | コヒーレント光波通信用光受信機 |
US20020033979A1 (en) * | 1999-05-27 | 2002-03-21 | Edwin Dair | Method and apparatus for multiboard fiber optic modules and fiber optic module arrays |
US8687981B2 (en) * | 2007-10-02 | 2014-04-01 | Luxtera, Inc. | Method and system for split voltage domain transmitter circuits |
JP5077158B2 (ja) * | 2008-09-09 | 2012-11-21 | 三菱電機株式会社 | 受光素子 |
JP2012518202A (ja) * | 2009-02-17 | 2012-08-09 | オクラロ テクノロジー リミテッド | 光通信用の光チップおよび光デバイス |
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