JP5865870B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP5865870B2
JP5865870B2 JP2013127968A JP2013127968A JP5865870B2 JP 5865870 B2 JP5865870 B2 JP 5865870B2 JP 2013127968 A JP2013127968 A JP 2013127968A JP 2013127968 A JP2013127968 A JP 2013127968A JP 5865870 B2 JP5865870 B2 JP 5865870B2
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electrode
layer
light emitting
semiconductor layer
semiconductor
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Japanese (ja)
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JP2014041999A (ja
JP2014041999A5 (enExample
Inventor
弘 勝野
弘 勝野
三木　聡
聡 三木
俊秀 伊藤
俊秀 伊藤
布上　真也
真也 布上
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Toshiba Corp
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Toshiba Corp
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JP2013127968A 2013-06-18 2013-06-18 半導体発光素子 Active JP5865870B2 (ja)

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JP2013127968A JP5865870B2 (ja) 2013-06-18 2013-06-18 半導体発光素子

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JP2013127968A JP5865870B2 (ja) 2013-06-18 2013-06-18 半導体発光素子

Related Parent Applications (1)

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JP2012182748A Division JP5377725B1 (ja) 2012-08-21 2012-08-21 半導体発光素子

Publications (3)

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JP2014041999A JP2014041999A (ja) 2014-03-06
JP2014041999A5 JP2014041999A5 (enExample) 2014-09-11
JP5865870B2 true JP5865870B2 (ja) 2016-02-17

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JP2013127968A Active JP5865870B2 (ja) 2013-06-18 2013-06-18 半導体発光素子

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JP (1) JP5865870B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107155373B (zh) * 2014-06-18 2019-01-15 艾克斯瑟乐普林特有限公司 微组装led显示器
JP2016146389A (ja) * 2015-02-06 2016-08-12 株式会社東芝 半導体発光素子及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4359263B2 (ja) * 2005-05-18 2009-11-04 ローム株式会社 半導体発光装置
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP5251038B2 (ja) * 2007-08-23 2013-07-31 豊田合成株式会社 発光装置
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
JP5246199B2 (ja) * 2010-03-31 2013-07-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR100974787B1 (ko) * 2010-02-04 2010-08-06 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지

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