JP5845557B2 - 半導体発光素子の製造方法 - Google Patents

半導体発光素子の製造方法 Download PDF

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Publication number
JP5845557B2
JP5845557B2 JP2010078239A JP2010078239A JP5845557B2 JP 5845557 B2 JP5845557 B2 JP 5845557B2 JP 2010078239 A JP2010078239 A JP 2010078239A JP 2010078239 A JP2010078239 A JP 2010078239A JP 5845557 B2 JP5845557 B2 JP 5845557B2
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Prior art keywords
layer
plating
light emitting
semiconductor
light reflecting
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Expired - Fee Related
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JP2010078239A
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English (en)
Japanese (ja)
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JP2011211015A5 (enrdf_load_stackoverflow
JP2011211015A (ja
Inventor
直樹 平尾
直樹 平尾
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Sony Corp
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Sony Corp
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Priority to JP2010078239A priority Critical patent/JP5845557B2/ja
Priority to US13/053,433 priority patent/US20110241047A1/en
Priority to CN201110073883.5A priority patent/CN102208513B/zh
Publication of JP2011211015A publication Critical patent/JP2011211015A/ja
Publication of JP2011211015A5 publication Critical patent/JP2011211015A5/ja
Application granted granted Critical
Publication of JP5845557B2 publication Critical patent/JP5845557B2/ja
Priority to US15/679,459 priority patent/US11335830B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/0346—Plating
    • H01L2224/03464—Electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
    • H01L2224/0391—Forming a passivation layer after forming the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05561—On the entire surface of the internal layer
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05575—Plural external layers
    • H01L2224/0558—Plural external layers being stacked
    • H01L2224/05582—Two-layer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2010078239A 2010-03-30 2010-03-30 半導体発光素子の製造方法 Expired - Fee Related JP5845557B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010078239A JP5845557B2 (ja) 2010-03-30 2010-03-30 半導体発光素子の製造方法
US13/053,433 US20110241047A1 (en) 2010-03-30 2011-03-22 Photo-emission semiconductor device and method of manufacturing same
CN201110073883.5A CN102208513B (zh) 2010-03-30 2011-03-23 发光半导体器件及其制造方法
US15/679,459 US11335830B2 (en) 2010-03-30 2017-08-17 Photo-emission semiconductor device and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010078239A JP5845557B2 (ja) 2010-03-30 2010-03-30 半導体発光素子の製造方法

Publications (3)

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JP2011211015A JP2011211015A (ja) 2011-10-20
JP2011211015A5 JP2011211015A5 (enrdf_load_stackoverflow) 2013-04-11
JP5845557B2 true JP5845557B2 (ja) 2016-01-20

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JP2010078239A Expired - Fee Related JP5845557B2 (ja) 2010-03-30 2010-03-30 半導体発光素子の製造方法

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US (2) US20110241047A1 (enrdf_load_stackoverflow)
JP (1) JP5845557B2 (enrdf_load_stackoverflow)
CN (1) CN102208513B (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5845557B2 (ja) 2010-03-30 2016-01-20 ソニー株式会社 半導体発光素子の製造方法
KR101125025B1 (ko) 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
TW201414012A (zh) * 2012-09-26 2014-04-01 Chi Mei Lighting Tech Corp 發光裝置及其製作方法
JP6208051B2 (ja) * 2014-03-06 2017-10-04 大同特殊鋼株式会社 点光源発光ダイオード
CN105226160A (zh) * 2015-09-01 2016-01-06 中国科学院半导体研究所 化学镀银制作氮化镓基发光二极管反射镜金属层的方法
CN106057993B (zh) * 2016-08-18 2019-07-23 厦门市三安光电科技有限公司 一种薄膜垂直发光组件及其制作方法
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
CN111200046B (zh) * 2020-01-13 2022-06-03 广东省半导体产业技术研究院 Led芯片结构及其制作方法

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US1627900A (en) * 1926-08-23 1927-05-10 Eastman Kodak Co Process of coating aluminum surfaces
JP2003168823A (ja) * 2001-09-18 2003-06-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
TWI243488B (en) 2003-02-26 2005-11-11 Osram Opto Semiconductors Gmbh Electrical contact-area for optoelectronic semiconductor-chip and its production method
KR100624411B1 (ko) * 2003-08-25 2006-09-18 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
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JP4973189B2 (ja) * 2004-10-19 2012-07-11 日亜化学工業株式会社 半導体素子
US7479663B2 (en) * 2005-09-12 2009-01-20 Showa Denko K.K. Gallium nitride-based semiconductor light emitting device and process for its production
JP4819453B2 (ja) * 2005-09-12 2011-11-24 昭和電工株式会社 窒化ガリウム系半導体発光素子およびその製造方法
WO2007032546A1 (en) * 2005-09-16 2007-03-22 Showa Denko K.K. Production method for nitride semiconductor light emitting device
JP2007081312A (ja) * 2005-09-16 2007-03-29 Showa Denko Kk 窒化物系半導体発光素子の製造方法
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JP2007157852A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
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JP4367531B2 (ja) * 2007-06-06 2009-11-18 ソニー株式会社 発光素子における電極構造の形成方法、及び、積層構造体の形成方法
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JP5310371B2 (ja) * 2009-08-10 2013-10-09 ソニー株式会社 半導体発光素子及びその製造方法
JP5845557B2 (ja) 2010-03-30 2016-01-20 ソニー株式会社 半導体発光素子の製造方法
JP5740901B2 (ja) 2010-10-15 2015-07-01 ソニー株式会社 発光装置および表示装置
JP6328497B2 (ja) 2014-06-17 2018-05-23 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子、パッケージ素子、および発光パネル装置

Also Published As

Publication number Publication date
US20170345973A1 (en) 2017-11-30
US20110241047A1 (en) 2011-10-06
JP2011211015A (ja) 2011-10-20
CN102208513B (zh) 2016-06-22
US11335830B2 (en) 2022-05-17
CN102208513A (zh) 2011-10-05

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