JP5845256B2 - デバイス貫通バイアのための試験技法 - Google Patents
デバイス貫通バイアのための試験技法 Download PDFInfo
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- JP5845256B2 JP5845256B2 JP2013518769A JP2013518769A JP5845256B2 JP 5845256 B2 JP5845256 B2 JP 5845256B2 JP 2013518769 A JP2013518769 A JP 2013518769A JP 2013518769 A JP2013518769 A JP 2013518769A JP 5845256 B2 JP5845256 B2 JP 5845256B2
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- Japan
- Prior art keywords
- probe
- card assembly
- vias
- test
- probe card
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000012360 testing method Methods 0.000 title claims description 99
- 238000000034 method Methods 0.000 title description 15
- 239000000523 sample Substances 0.000 claims description 126
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 239000003351 stiffener Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2889—Interfaces, e.g. between probe and tester
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Tests Of Electronic Circuits (AREA)
- Measuring Leads Or Probes (AREA)
Description
Claims (7)
- 基板と、
前記基板上に配置され、電子デバイスのデバイス貫通バイアの端部を含む接続構造に接触するように構成されたプローブと、
前記プローブの第1の対における第1のプローブ及び第2のプローブを電気的に接続する第1の電気的接続と、
前記プローブの第2の対における第3のプローブ及び第4のプローブを電気的に接続する第2の電気的接続と、
前記第1の電気的接続及び前記第2の電気的接続を電気的に接続する第3の電気的接続と、を備え、
前記第1のプローブが前記デバイス貫通バイアの第1のものに接触するとともに前記第2のプローブが前記デバイス貫通バイアの第2のものに接触している間、前記第1のプローブ、前記第2のプローブ及び前記第1の電気的接続が、前記第1のデバイス貫通バイアから前記第2のデバイス貫通バイアまでの第1の直接戻りループを形成し、
前記第3のプローブが前記デバイス貫通バイアの第3のものに接触するとともに前記第4のプローブが前記デバイス貫通バイアの第4のものに接触している間、前記第3のプローブ、前記第4のプローブ、及び前記第2の電気的接続が、前記第3のデバイス貫通バイアから前記第4のデバイス貫通バイアまでの第2の直接戻りループを形成する、
プローブカードアセンブリ。 - 前記第3の電気的接続が、前記第1の電気的接続及び前記第2の電気的接続を選択的に接続及び切断するスイッチを有する、請求項1に記載のプローブカードアセンブリ。
- 前記電子デバイスの試験を制御するように構成されたテスタに対する電気的インタフェースを更に備える、請求項1に記載のプローブカードアセンブリ。
- 前記第1の電気的接続が、前記電気的インタフェースに直接接続されていない、請求項3に記載のプローブカードアセンブリ。
- 前記電気的インタフェースが、前記プローブのいくつかに直接接続されている、請求項4に記載のプローブカードアセンブリ。
- 前記第1の電気的接続を接地に対して選択的に接続及び切断するスイッチを更に備える、請求項1に記載のプローブカードアセンブリ。
- 前記基板が、剛性であり、
前記プローブが、細長く、可撓性で、弾性である、請求項1に記載のプローブカードアセンブリ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36180010P | 2010-07-06 | 2010-07-06 | |
US61/361,800 | 2010-07-06 | ||
US13/172,001 US8896336B2 (en) | 2010-07-06 | 2011-06-29 | Testing techniques for through-device vias |
US13/172,001 | 2011-06-29 | ||
PCT/US2011/042850 WO2012006249A2 (en) | 2010-07-06 | 2011-07-01 | Testing techniques for through-device vias |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013533484A JP2013533484A (ja) | 2013-08-22 |
JP5845256B2 true JP5845256B2 (ja) | 2016-01-20 |
Family
ID=45438154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013518769A Expired - Fee Related JP5845256B2 (ja) | 2010-07-06 | 2011-07-01 | デバイス貫通バイアのための試験技法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8896336B2 (ja) |
JP (1) | JP5845256B2 (ja) |
KR (1) | KR101870302B1 (ja) |
SG (1) | SG186924A1 (ja) |
TW (1) | TWI547696B (ja) |
WO (1) | WO2012006249A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8344746B2 (en) * | 2008-09-29 | 2013-01-01 | Thermo Fisher Scientific Inc. | Probe interface for electrostatic discharge testing of an integrated circuit |
US8232115B2 (en) * | 2009-09-25 | 2012-07-31 | International Business Machines Corporation | Test structure for determination of TSV depth |
CN102623370A (zh) * | 2012-04-07 | 2012-08-01 | 成都聚合科技有限公司 | 一种高倍聚光光伏光电转换接收器测试系统装置 |
US20130297981A1 (en) * | 2012-05-01 | 2013-11-07 | Qualcomm Incorporated | Low cost high throughput tsv/microbump probe |
US9024315B2 (en) * | 2013-03-13 | 2015-05-05 | Qualcomm, Incorporated | Daisy chain connection for testing continuity in a semiconductor die |
US9269603B2 (en) * | 2013-05-09 | 2016-02-23 | Globalfoundries Inc. | Temporary liquid thermal interface material for surface tension adhesion and thermal control |
JP6127901B2 (ja) * | 2013-10-21 | 2017-05-17 | セイコーエプソン株式会社 | シート製造装置、シート製造方法 |
KR101963121B1 (ko) * | 2014-12-02 | 2019-03-28 | 주식회사 레이언스 | 구강내 센서 |
TWI721147B (zh) * | 2016-04-04 | 2021-03-11 | 美商矽立科技有限公司 | 供集成微機電裝置用的設備及方法 |
TWI668457B (zh) * | 2018-08-27 | 2019-08-11 | 創意電子股份有限公司 | 檢測裝置 |
CN116811040B (zh) * | 2023-08-26 | 2023-11-10 | 江苏鹏利芝达恩半导体有限公司 | 用于制造立式探针卡的陶瓷棒制造方法、设备及存储介质 |
Family Cites Families (22)
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US5477160A (en) * | 1992-08-12 | 1995-12-19 | Fujitsu Limited | Module test card |
JP3320517B2 (ja) | 1993-09-14 | 2002-09-03 | 松下電器産業株式会社 | 回路基板検査用プローブおよびこれを備えた回路基板検査システム |
JPH11160356A (ja) | 1997-11-25 | 1999-06-18 | Matsushita Electric Ind Co Ltd | ウェハ一括型測定検査用プローブカードおよびセラミック多層配線基板ならびにそれらの製造方法 |
US6620731B1 (en) * | 1997-12-18 | 2003-09-16 | Micron Technology, Inc. | Method for fabricating semiconductor components and interconnects with contacts on opposing sides |
US6657455B2 (en) * | 2000-01-18 | 2003-12-02 | Formfactor, Inc. | Predictive, adaptive power supply for an integrated circuit under test |
US6729019B2 (en) * | 2001-07-11 | 2004-05-04 | Formfactor, Inc. | Method of manufacturing a probe card |
JP2004093451A (ja) * | 2002-09-02 | 2004-03-25 | Tokyo Electron Ltd | プローブ方法及びプローブ装置 |
US7342402B2 (en) * | 2003-04-10 | 2008-03-11 | Formfactor, Inc. | Method of probing a device using captured image of probe structure in which probe tips comprise alignment features |
US7046027B2 (en) * | 2004-10-15 | 2006-05-16 | Teradyne, Inc. | Interface apparatus for semiconductor device tester |
JP4535494B2 (ja) | 2004-10-20 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 薄膜プローブシートの製造方法および半導体チップの検査方法 |
KR100655689B1 (ko) | 2005-08-30 | 2006-12-08 | 삼성전자주식회사 | 프로브 방법, 프로브 방법에 사용되는 프로브 카드, 및프로브 카드를 이용해서 프로브 방법을 수행하기 위한프로브 장치 |
US7733106B2 (en) * | 2005-09-19 | 2010-06-08 | Formfactor, Inc. | Apparatus and method of testing singulated dies |
US7622935B2 (en) * | 2005-12-02 | 2009-11-24 | Formfactor, Inc. | Probe card assembly with a mechanically decoupled wiring substrate |
US7671614B2 (en) * | 2005-12-02 | 2010-03-02 | Formfactor, Inc. | Apparatus and method for adjusting an orientation of probes |
US20080018350A1 (en) * | 2006-07-21 | 2008-01-24 | Clinton Chao | Test probe for integrated circuits with ultra-fine pitch terminals |
US7598523B2 (en) * | 2007-03-19 | 2009-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Test structures for stacking dies having through-silicon vias |
JP4949947B2 (ja) * | 2007-06-25 | 2012-06-13 | 日置電機株式会社 | 回路基板検査方法および回路基板検査装置 |
JP2009105247A (ja) * | 2007-10-24 | 2009-05-14 | Seiko Epson Corp | 半導体装置の製造方法 |
US8471577B2 (en) * | 2010-06-11 | 2013-06-25 | Texas Instruments Incorporated | Lateral coupling enabled topside only dual-side testing of TSV die attached to package substrate |
US8993432B2 (en) * | 2011-11-16 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Test structure and method of testing electrical characteristics of through vias |
US8791712B2 (en) * | 2012-02-02 | 2014-07-29 | International Business Machines Corporation | 3-dimensional integrated circuit testing using MEMS switches with tungsten cone contacts |
US20130297981A1 (en) * | 2012-05-01 | 2013-11-07 | Qualcomm Incorporated | Low cost high throughput tsv/microbump probe |
-
2011
- 2011-06-29 US US13/172,001 patent/US8896336B2/en not_active Expired - Fee Related
- 2011-07-01 KR KR1020137003156A patent/KR101870302B1/ko active IP Right Grant
- 2011-07-01 JP JP2013518769A patent/JP5845256B2/ja not_active Expired - Fee Related
- 2011-07-01 SG SG2013000609A patent/SG186924A1/en unknown
- 2011-07-01 WO PCT/US2011/042850 patent/WO2012006249A2/en active Application Filing
- 2011-07-05 TW TW100123653A patent/TWI547696B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2012006249A2 (en) | 2012-01-12 |
WO2012006249A3 (en) | 2012-04-26 |
KR101870302B1 (ko) | 2018-06-22 |
US8896336B2 (en) | 2014-11-25 |
KR20130125354A (ko) | 2013-11-18 |
TW201213815A (en) | 2012-04-01 |
TWI547696B (zh) | 2016-09-01 |
SG186924A1 (en) | 2013-02-28 |
US20120007626A1 (en) | 2012-01-12 |
JP2013533484A (ja) | 2013-08-22 |
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