JP5840894B2 - 基板処理装置及び基板処理方法 - Google Patents
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- 238000000866 electrolytic etching Methods 0.000 claims description 6
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- Condensed Matter Physics & Semiconductors (AREA)
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- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
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- General Chemical & Material Sciences (AREA)
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- Chemically Coating (AREA)
Description
これにより、常に一定量の処理液を処理槽内に供給しながら、処理槽内の基板の表面に沿った処理液の流れ方向を切替えることができる。
前記複数の入口配管及び前記出口配管のうちの第1入口配管及び第1出口配管から第2入口配管及び第2出口配管に切替える時、前記制御部は、前記第1入口配管及び前記第1出口配管の内部を流れる流量を徐々に減少させてゼロにすると同時に、前記第2入口配管及び前記第2出口配管の内部を流れる流量を徐々に増加させるように、前記流量制御装置を制御することが好ましい。
前記複数の入口配管及び前記出口配管のうちの第1入口配管及び第1出口配管から第2入口配管及び第2出口配管に切替える時、前記第1入口配管及び前記第1出口配管の内部を流れる流量を徐々に減少させてゼロにすると同時に、前記第2入口配管及び前記第2出口配管の内部を流れる流量を徐々に増加させるように、前記流量制御装置を制御することが好ましい。
22 基板ホルダ
23a 流路形成空間
23b アノード収容空間
24 隔膜
26a,26b,50a,50b 入口配管
28a,28b,52a,52b 出口配管
30 ポンプ
40 第1めっき液供給系
42 第2めっき液供給系、
44a,44b、46a,46b,58a,58b、60a,60b 流量制御装置(マスフローコントローラ)
48 制御部
54 第3めっき液供給系
56 第4めっき液供給系
62a,62b,62c,62d 共通配管
104 アノード
112 シール部
114 接点
Claims (6)
- 電気めっき装置用の処理液、無電解めっき装置用の処理液、めっき前処理装置用の処理液、および電解エッチング装置用の処理液からなる一群から選択された処理液を保持する処理槽と、
基板を保持して処理槽内の処理液に接触させる基板ホルダと、
前記処理槽に接続され、該処理槽内に基板の表面に沿った方向が異なる処理液の流れが形成されるように切替えて使用される複数の入口配管及び出口配管と、
前記入口配管及び前記出口配管を通して前記処理槽内に処理液を供給し循環させるポンプを備え、
前記入口配管及び前記出口配管には、切替えて使用される時に、基板の表面に沿って流れる処理液の流量が1〜10秒の間で変化するように制御部で制御される流量制御装置がそれぞれ設けられていることを特徴とする基板処理装置。 - 前記制御部は、前記入口配管及び前記出口配管を切替えて使用する時を含め、前記処理槽内に常に一定量の処理液が供給されるように、前記流量制御装置を制御することを特徴とする請求項1記載の基板処理装置。
- 前記複数の入口配管及び前記出口配管のうちの第1入口配管及び第1出口配管から第2入口配管及び第2出口配管に切替える時、前記制御部は、前記第1入口配管及び前記第1出口配管の内部を流れる流量を徐々に減少させてゼロにすると同時に、前記第2入口配管及び前記第2出口配管の内部を流れる流量を徐々に増加させるように、前記流量制御装置を制御することを特徴とする請求項1または2記載の基板処理装置。
- 電気めっき装置用の処理液、無電解めっき装置用の処理液、めっき前処理装置用の処理液、および電解エッチング装置用の処理液からなる一群から選択された処理液を保持する処理槽に接続された複数の入口配管及び出口配管の内の任意の入口配管及び出口配管を使用し、処理槽内に基板の表面に沿って一方向に向かう処理液の流れが形成されるように処理液を供給して循環させ、
前記処理槽に接続された前記入口配管及び前記出口配管の内の他の任意の入口配管及び出口配管を切替え使用して、前記処理槽内に基板の表面に沿って他方向に向かう処理液の流れが形成されるように処理液を供給して循環させ、
前記入口配管及び前記出口配管を切替えて使用する時に、前記入口配管及び前記出口配管の内部をそれぞれ流れる処理液の流量を、前記入口配管及び前記出口配管に設けられた流量制御装置により1〜10秒の間で変化させることを特徴とする基板処理方法。 - 前記入口配管及び前記出口配管を切替えて使用する時を含め、前記処理槽内に常に一定量の処理液が供給されるように、前記流量制御装置を制御することを特徴とする請求項4記載の基板処理方法。
- 前記複数の入口配管及び前記出口配管のうちの第1入口配管及び第1出口配管から第2入口配管及び第2出口配管に切替える時、前記第1入口配管及び前記第1出口配管の内部を流れる流量を徐々に減少させてゼロにすると同時に、前記第2入口配管及び前記第2出口配管の内部を流れる流量を徐々に増加させるように、前記流量制御装置を制御することを特徴とする請求項4または5記載の基板処理方法。
Priority Applications (4)
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JP2011179544A JP5840894B2 (ja) | 2011-08-19 | 2011-08-19 | 基板処理装置及び基板処理方法 |
TW101128272A TWI565839B (zh) | 2011-08-19 | 2012-08-06 | A substrate processing apparatus and a substrate processing method |
US13/572,924 US9556533B2 (en) | 2011-08-19 | 2012-08-13 | Substrate processing apparatus and substrate processing method |
KR1020120088935A KR101796326B1 (ko) | 2011-08-19 | 2012-08-14 | 기판 처리 장치 및 기판 처리 방법 |
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KR20220073822A (ko) * | 2019-10-08 | 2022-06-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 기계적으로-구동되는 진동 유동 교반 |
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JPS53119225A (en) * | 1977-03-28 | 1978-10-18 | Sankuesuto Kk | Plating method |
JPH0598455A (ja) * | 1991-10-07 | 1993-04-20 | Mitsubishi Electric Corp | 無電解めつき槽 |
JPH06146068A (ja) * | 1992-11-11 | 1994-05-27 | Kobe Steel Ltd | 電気めっき方法及び電気めっき装置 |
JP3379216B2 (ja) * | 1994-06-08 | 2003-02-24 | 啓一郎 菅沼 | 半導体の製造方法 |
JP3411103B2 (ja) * | 1994-09-14 | 2003-05-26 | イビデン株式会社 | 電解めっき方法、電解めっき装置、電解めっき用ラック |
JPH09273000A (ja) * | 1996-04-09 | 1997-10-21 | Hitachi Kyowa Eng Kk | めっき装置 |
JP3778239B2 (ja) | 1998-01-30 | 2006-05-24 | 株式会社荏原製作所 | めっき装置及びそれを用いた基板の加工方法 |
JP3772941B2 (ja) * | 1998-03-05 | 2006-05-10 | 株式会社荏原製作所 | めっき装置 |
JP3939456B2 (ja) * | 1998-03-05 | 2007-07-04 | 株式会社荏原製作所 | 基板のめっき方法及び装置 |
JP2000256896A (ja) | 1999-03-11 | 2000-09-19 | Ebara Corp | めっき装置 |
JP2000087290A (ja) * | 1998-09-14 | 2000-03-28 | Electroplating Eng Of Japan Co | ウエーハめっき装置 |
JP3706294B2 (ja) * | 2000-03-27 | 2005-10-12 | 東京エレクトロン株式会社 | 処理液供給装置及び処理液供給方法 |
JP2003073893A (ja) * | 2001-09-04 | 2003-03-12 | Kgk Co Ltd | 平板めっき装置 |
JP2008121062A (ja) * | 2006-11-10 | 2008-05-29 | Ebara Corp | めっき装置及びめっき方法 |
JP2009263758A (ja) * | 2008-04-30 | 2009-11-12 | Ebara Corp | 電解めっき装置及び電解めっき方法 |
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KR20130020584A (ko) | 2013-02-27 |
US20130056361A1 (en) | 2013-03-07 |
US9556533B2 (en) | 2017-01-31 |
TWI565839B (zh) | 2017-01-11 |
JP2013040395A (ja) | 2013-02-28 |
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