JP5838079B2 - 半導体用途での正確な温度測定 - Google Patents
半導体用途での正確な温度測定 Download PDFInfo
- Publication number
- JP5838079B2 JP5838079B2 JP2011251423A JP2011251423A JP5838079B2 JP 5838079 B2 JP5838079 B2 JP 5838079B2 JP 2011251423 A JP2011251423 A JP 2011251423A JP 2011251423 A JP2011251423 A JP 2011251423A JP 5838079 B2 JP5838079 B2 JP 5838079B2
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- JP
- Japan
- Prior art keywords
- process chamber
- temperature
- sensing element
- phase
- temperature sensing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/06—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using melting, freezing, or softening
- G01K11/08—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using melting, freezing, or softening of disposable test bodies, e.g. cone
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/06—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using melting, freezing, or softening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
本発明の原理を例示した添付図面との関連で行う以下の説明から、本発明のその他の態様および利点が明らかになる。
Claims (10)
- プロセスチャンバであって、
前記プロセスチャンバを区画する壁の内面に配置され、空洞を有する温度検知要素と、
前記空洞の開口部を覆うよう配置された透明カバーと、
前記温度検知要素の前記空洞内に配置された材料と、
前記透明カバーを通して、前記材料の固相から液相への変化と液相から固相への変化とのいずれかの相変化を光学的に検知するよう構成されたセンサと
を備え、前記センサを、前記温度検知要素と対向する前記プロセスチャンバ壁上の位置に設けたプロセスチャンバ。 - 請求項1に記載のプロセスチャンバであって、前記材料は、有機化合物と無機化合物とのいずれかであるプロセスチャンバ。
- 請求項2に記載のプロセスチャンバであって、
前記有機化合物は、ナフタレン、サリチル酸、および、ベンゾフェノンの中から選択され、
前記無機化合物は、硝酸コバルト(II)、安息香酸アルミニウム、酢酸アルミニウム、臭化アンチモン(III)、および、塩化アンチモン(III)の中から選択された
プロセスチャンバ。 - 請求項1に記載のプロセスチャンバであって、
前記空洞は、少なくとも2つの空間を有し、
前記空洞内の前記材料は、前記材料の前記固相から液相への相変化が起きると、第1の空間から第2の空間に移動される
プロセスチャンバ。 - 請求項1に記載のプロセスチャンバであって、前記センサはレーザ分光計であり、前記透明な材料は石英であるプロセスチャンバ。
- プロセスチャンバ内の温度分布を決定する方法であって、
埋め込まれた材料を有する温度検知要素を前記プロセスチャンバの壁の内面に配置する工程と、
前記プロセスチャンバ内でプロセス動作を開始する工程と、
前記温度検知要素と対向する前記プロセスチャンバ壁上の位置に設けられたセンサを用いて、前記埋め込まれた材料の固相から液相への変化と液相から固相への変化とのいずれかの相変化を光学的に検出する工程と、
前記相変化に対応する温度を記録する工程と
を備える方法。 - 請求項6に記載の方法であって、さらに、
前記プロセスチャンバの基板支持部の内面上に、更に温度検知要素を配置する工程を備える方法。 - 前記温度検知要素が配置される前記プロセスチャンバの壁は、側壁である請求項6に記載の方法。
- 請求項6に記載の方法であって、前記相変化は、固相から液相への変化であり、前記固相から液相への相変化は、前記温度検出要素内で第1の空間から第2の空の空間への前記材料の移動を引き起こす
方法。 - 請求項6に記載の方法であって、さらに、
前記埋め込まれた材料を透明カバーで覆う工程を備える方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/097,063 | 2005-04-01 | ||
US11/097,063 US7380982B2 (en) | 2005-04-01 | 2005-04-01 | Accurate temperature measurement for semiconductor applications |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008504129A Division JP5101490B2 (ja) | 2005-04-01 | 2006-03-17 | 半導体用途での正確な温度測定 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012094875A JP2012094875A (ja) | 2012-05-17 |
JP5838079B2 true JP5838079B2 (ja) | 2015-12-24 |
Family
ID=37073932
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008504129A Expired - Fee Related JP5101490B2 (ja) | 2005-04-01 | 2006-03-17 | 半導体用途での正確な温度測定 |
JP2011251423A Expired - Fee Related JP5838079B2 (ja) | 2005-04-01 | 2011-11-17 | 半導体用途での正確な温度測定 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008504129A Expired - Fee Related JP5101490B2 (ja) | 2005-04-01 | 2006-03-17 | 半導体用途での正確な温度測定 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7380982B2 (ja) |
JP (2) | JP5101490B2 (ja) |
KR (1) | KR101034169B1 (ja) |
CN (1) | CN101156056B (ja) |
TW (1) | TWI310961B (ja) |
WO (1) | WO2006107571A2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7795605B2 (en) | 2007-06-29 | 2010-09-14 | International Business Machines Corporation | Phase change material based temperature sensor |
US8388223B2 (en) * | 2007-08-09 | 2013-03-05 | The Edward Orton Jr. Ceramic Foundation | Furnace temperature monitoring device and method |
KR101514098B1 (ko) * | 2009-02-02 | 2015-04-21 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치와 온도 측정 방법 및 장치 |
US9297705B2 (en) * | 2009-05-06 | 2016-03-29 | Asm America, Inc. | Smart temperature measuring device |
US8911145B2 (en) * | 2009-11-20 | 2014-12-16 | The United States Of America As Represented By The Secretary Of The Navy | Method to measure the characteristics in an electrical component |
CN102313599B (zh) * | 2010-06-29 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 耦合窗的温度测量装置、等离子体设备及温度测量方法 |
CN104296889B (zh) * | 2013-07-16 | 2017-09-29 | 泰科电子(上海)有限公司 | 温度指示器和设置有该温度指示器的物品 |
JP5769835B2 (ja) * | 2014-02-14 | 2015-08-26 | 日油技研工業株式会社 | 高温不可逆性温度管理材 |
US9851263B2 (en) | 2015-09-29 | 2017-12-26 | Stephen Bugglin | Portable heating chamber system for pyrometric proficiency testing |
SG11201805608WA (en) * | 2016-01-25 | 2018-08-30 | Klt Technology Inc | Visual and electronically readable temperature indicator |
US10736180B2 (en) * | 2017-04-28 | 2020-08-04 | Tutco Llc | Heater with an optical sensor for over-temperature protection |
US10345159B1 (en) | 2018-03-20 | 2019-07-09 | Klt Technology, Inc. | Visual and electronically readable temperature indicator |
CN111928967A (zh) * | 2020-07-27 | 2020-11-13 | 北京航空航天大学 | 一种碱金属气室内部温度测量装置 |
TW202240136A (zh) * | 2021-02-01 | 2022-10-16 | 日商愛發科股份有限公司 | 溫度測定方法、溫度測定裝置、及薄膜形成方法 |
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US2261473A (en) * | 1938-04-16 | 1941-11-04 | George W Jennings | Temperature indicator |
US4353990A (en) * | 1981-02-09 | 1982-10-12 | Minnesota Mining And Manufacturing Company | Sanitation indicator |
GB8614839D0 (en) * | 1986-06-18 | 1986-07-23 | Gen Electric Co Plc | Indicating changes in temperatures |
DE3732992A1 (de) * | 1987-09-30 | 1989-04-13 | Holzer Walter | Verfahren zur temperatur-ueberwachung von kuehl- und tiefkuehleinrichtungen und vorrichtungen zur ausuebung des verfahrens |
US5159564A (en) * | 1988-12-22 | 1992-10-27 | North Carolina State University | Thermal memory cell and thermal system evaluation |
US5310260A (en) * | 1990-04-10 | 1994-05-10 | Luxtron Corporation | Non-contact optical techniques for measuring surface conditions |
US5118200A (en) * | 1990-06-13 | 1992-06-02 | Varian Associates, Inc. | Method and apparatus for temperature measurements |
US5158364A (en) * | 1990-12-21 | 1992-10-27 | Temple University | Method of making and using an improved liquid crystal cumulative dosimeter container |
US5377126A (en) * | 1991-09-13 | 1994-12-27 | Massachusetts Institute Of Technology | Non-contact temperature measurement of a film growing on a substrate |
US5215378A (en) * | 1992-04-17 | 1993-06-01 | Introtech, Inc. | Dual temperature indicator |
US5313044A (en) * | 1992-04-28 | 1994-05-17 | Duke University | Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor |
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JP3407749B2 (ja) * | 1992-09-03 | 2003-05-19 | 富士電機株式会社 | 誘導炉の棚吊り保護装置 |
US5641707A (en) * | 1994-10-31 | 1997-06-24 | Texas Instruments Incorporated | Direct gas-phase doping of semiconductor wafers using an organic dopant source of phosphorus |
US6561694B1 (en) * | 1998-07-28 | 2003-05-13 | Steag Rtp Systems Gmbh | Method and device for calibrating measurements of temperatures independent of emissivity |
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JP2003065862A (ja) * | 2001-08-30 | 2003-03-05 | Kuromikku:Kk | 示温表示装置 |
US6786637B2 (en) * | 2002-09-13 | 2004-09-07 | The University Of Bristol | Temperature measurement of an electronic device |
DE10307933B3 (de) * | 2003-02-25 | 2004-06-03 | Ivoclar Vivadent Ag | Kalibriervorrichtung |
-
2005
- 2005-04-01 US US11/097,063 patent/US7380982B2/en not_active Expired - Fee Related
-
2006
- 2006-03-17 JP JP2008504129A patent/JP5101490B2/ja not_active Expired - Fee Related
- 2006-03-17 WO PCT/US2006/009879 patent/WO2006107571A2/en active Application Filing
- 2006-03-17 KR KR1020077025446A patent/KR101034169B1/ko active IP Right Grant
- 2006-03-17 CN CN2006800110594A patent/CN101156056B/zh not_active Expired - Fee Related
- 2006-03-31 TW TW095111411A patent/TWI310961B/zh not_active IP Right Cessation
-
2011
- 2011-11-17 JP JP2011251423A patent/JP5838079B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2006107571A3 (en) | 2007-03-01 |
JP2012094875A (ja) | 2012-05-17 |
KR20080004566A (ko) | 2008-01-09 |
TW200707510A (en) | 2007-02-16 |
US20080025370A1 (en) | 2008-01-31 |
JP5101490B2 (ja) | 2012-12-19 |
CN101156056A (zh) | 2008-04-02 |
CN101156056B (zh) | 2013-12-11 |
US7380982B2 (en) | 2008-06-03 |
TWI310961B (en) | 2009-06-11 |
JP2008534961A (ja) | 2008-08-28 |
WO2006107571A2 (en) | 2006-10-12 |
KR101034169B1 (ko) | 2011-05-12 |
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