JP5833362B2 - サファイア基板の加工方法 - Google Patents

サファイア基板の加工方法 Download PDF

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Publication number
JP5833362B2
JP5833362B2 JP2011149388A JP2011149388A JP5833362B2 JP 5833362 B2 JP5833362 B2 JP 5833362B2 JP 2011149388 A JP2011149388 A JP 2011149388A JP 2011149388 A JP2011149388 A JP 2011149388A JP 5833362 B2 JP5833362 B2 JP 5833362B2
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JP
Japan
Prior art keywords
sapphire substrate
laser beam
processing
optical device
lot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011149388A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013016703A (ja
Inventor
信守 生越
信守 生越
篤 植木
篤 植木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2011149388A priority Critical patent/JP5833362B2/ja
Priority to TW101119303A priority patent/TWI590900B/zh
Priority to KR1020120068965A priority patent/KR101876578B1/ko
Priority to CN201210226284.7A priority patent/CN102861992B/zh
Publication of JP2013016703A publication Critical patent/JP2013016703A/ja
Application granted granted Critical
Publication of JP5833362B2 publication Critical patent/JP5833362B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP2011149388A 2011-07-05 2011-07-05 サファイア基板の加工方法 Active JP5833362B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011149388A JP5833362B2 (ja) 2011-07-05 2011-07-05 サファイア基板の加工方法
TW101119303A TWI590900B (zh) 2011-07-05 2012-05-30 Sapphire substrate processing methods
KR1020120068965A KR101876578B1 (ko) 2011-07-05 2012-06-27 사파이어 기판의 가공 방법
CN201210226284.7A CN102861992B (zh) 2011-07-05 2012-06-29 蓝宝石基板的加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011149388A JP5833362B2 (ja) 2011-07-05 2011-07-05 サファイア基板の加工方法

Publications (2)

Publication Number Publication Date
JP2013016703A JP2013016703A (ja) 2013-01-24
JP5833362B2 true JP5833362B2 (ja) 2015-12-16

Family

ID=47441264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011149388A Active JP5833362B2 (ja) 2011-07-05 2011-07-05 サファイア基板の加工方法

Country Status (4)

Country Link
JP (1) JP5833362B2 (ko)
KR (1) KR101876578B1 (ko)
CN (1) CN102861992B (ko)
TW (1) TWI590900B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6121733B2 (ja) 2013-01-31 2017-04-26 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP2017204574A (ja) * 2016-05-12 2017-11-16 株式会社ディスコ サファイアウェーハの加工方法及びレーザー加工装置
JP6651257B2 (ja) * 2016-06-03 2020-02-19 株式会社ディスコ 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置
CN115519238A (zh) * 2021-06-25 2022-12-27 台达电子工业股份有限公司 采用动态光斑的激光焊接系统及其方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63193842U (ko) * 1987-05-30 1988-12-14
JP2571656B2 (ja) * 1992-08-06 1997-01-16 浜松ホトニクス株式会社 レーザ加工装置
CN1126633C (zh) * 1995-01-13 2003-11-05 东海工业缝纫机株式会社 激光加工机和具有激光加工功能的缝纫机
JP4005440B2 (ja) * 2002-08-01 2007-11-07 住友重機械工業株式会社 レーザ加工方法
JP4468151B2 (ja) * 2004-12-16 2010-05-26 大日本印刷株式会社 材質判別装置
JP4909657B2 (ja) * 2006-06-30 2012-04-04 株式会社ディスコ サファイア基板の加工方法
CN101253018B (zh) * 2006-09-28 2010-05-19 三菱电机株式会社 激光加工装置
JP2009140958A (ja) * 2007-12-03 2009-06-25 Tokyo Seimitsu Co Ltd レーザーダイシング装置及びダイシング方法
JP5552627B2 (ja) * 2009-01-15 2014-07-16 並木精密宝石株式会社 エピタキシャル成長用内部改質基板及びそれを用いて作製される結晶成膜体、デバイス、バルク基板及びそれらの製造方法
JP5307612B2 (ja) * 2009-04-20 2013-10-02 株式会社ディスコ 光デバイスウエーハの加工方法
JP2011035253A (ja) * 2009-08-04 2011-02-17 Disco Abrasive Syst Ltd ウエーハの加工方法

Also Published As

Publication number Publication date
CN102861992B (zh) 2016-03-23
KR101876578B1 (ko) 2018-07-09
JP2013016703A (ja) 2013-01-24
TW201302361A (zh) 2013-01-16
KR20130005227A (ko) 2013-01-15
TWI590900B (zh) 2017-07-11
CN102861992A (zh) 2013-01-09

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