JP5831776B2 - 光活性化合物、感光性樹脂組成物および感光材 - Google Patents
光活性化合物、感光性樹脂組成物および感光材 Download PDFInfo
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- JP5831776B2 JP5831776B2 JP2014551211A JP2014551211A JP5831776B2 JP 5831776 B2 JP5831776 B2 JP 5831776B2 JP 2014551211 A JP2014551211 A JP 2014551211A JP 2014551211 A JP2014551211 A JP 2014551211A JP 5831776 B2 JP5831776 B2 JP 5831776B2
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- 239000005056 polyisocyanate Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 150000007934 α,β-unsaturated carboxylic acids Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/30—Phosphinic acids [R2P(=O)(OH)]; Thiophosphinic acids ; [R2P(=X1)(X2H) (X1, X2 are each independently O, S or Se)]
- C07F9/36—Amides thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
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- General Health & Medical Sciences (AREA)
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Description
Yは、R、OR、SR、CORおよびOCORからなる群より選択される1つ以上の置換基で置換もしくは非置換のC1〜C15のアルキレン基であり、
M1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
R1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
R2〜R6のうちの少なくとも1つはXAであり、残りはそれぞれ独立に、ハロゲン基、CN、R、OR、SR、COR、OCOR、NRR'およびCONRR'からなる群より選択され、
Xは、直接連結であるか;C=O;O;S;S=O;およびSO2からなる群より選択され、
Aは、ハロゲン基、CN、R、OR、SR、COR、OCOR、NRR'およびCONRR'からなる群より選択される1つ以上の基で置換もしくは非置換のC6〜C20のアリール基であり、
RおよびR'はそれぞれ独立に、水素、C1〜C10のアルキル基、C1〜C10のハロアルキル基およびC7〜C13のアリールアルキル基からなる群より選択されるか、前記RおよびR'は共に環を形成することができる。
スチレン、α−メチルスチレン、(o,m,p)−ビニルトルエン、(o,m,p)−メトキシスチレン、(o,m,p)−クロロスチレンのような芳香族ビニル類;
ビニルメチルエーテル、ビニルエチルエーテル、アリルグリシジルエーテルのような不飽和エーテル類;
N−ビニルピロリドン、N−ビニルカルバゾール、N−ビニルモルホリンのようなN−ビニル三次アミン類;N−フェニルマレイミド、N−(4−クロロフェニル)マレイミド、N−(4−ヒドロキシフェニル)マレイミド、N−シクロヘキシルマレイミドのような不飽和イミド類;無水マレイン酸、無水メチルマレイン酸のような無水マレイン酸類;
アリルグリシジルエーテル、グリシジル(メタ)アクリレート、3,4−エポキシシクロヘキシルメチル(メタ)アクリレートのような不飽和グリシジル化合物類、またはこれらの混合物などがある。
2,2'−ビス(2−クロロフェニル)−4,4',5,5'−テトラフェニルビイミダゾール、2,2'−ビス(2,3−ジクロロフェニル)−4,4',5,5'−テトラフェニルビイミダゾールなどのビイミダゾール化合物;
2−ヒドロキシ−2−メチル−1−フェニルプロパン−1−オン、1−(4−イソプロピルフェニル)−2−ヒドロキシ−2−メチルプロパン−1−オン、4−(2−ヒドロキシエトキシ)−フェニル(2−ヒドロキシ)プロピルケトン、1−ヒドロキシシクロヘキシルフェニルケトン、2,2−ジメトキシ−2−フェニルアセトフェノン、2−メチル−(4−メチルチオフェニル)−2−モルホリノ−1−プロパン−1−オン(Irgacure−907)、2−ベンジル−2−ジメチルアミノ−1−(4−モルホリノフェニル)−ブタン−1−オン(Irgacure−369)などのアセトフェノン系化合物;
BASF社のIrgacure OXE01、Irgacure OXE02、ADEKA社のN−1919、NCI−831、NCI−930のようなO−アシルオキシム系化合物;
4,4'−ビス(ジメチルアミノ)ベンゾフェノン、4,4'−ビス(ジエチルアミノ)ベンゾフェノンなどのベンゾフェノン系化合物;2,4−ジエチルチオキサントン、2−クロロチオキサントン、イソプロピルチオキサントン、ジイソプロピルチオキサントンなどのチオキサントン系化合物;2,4,6−トリメチルベンゾイルジフェニルホスフィンオキシド、ビス(2,6−ジメトキシベンゾイル)−2,4,4−トリメチルペンチルホスフィンオキシド、ビス(2,6−ジクロロベンゾイル)プロピルホスフィンオキシドなどのホスフィンオキシド系化合物;
3,3'−カルボニルビニル−7−(ジエチルアミノ)クマリン、3−(2−ベンゾチアゾリル)−7−(ジエチルアミノ)クマリン、3−ベンゾイル−7−(ジエチルアミノ)クマリン、3−ベンゾイル−7−メトキシ−クマリン、10,10'−カルボニルビス[1,1,7,7−テトラメチル−2,3,6,7−テトラヒドロ−1H,5H,11H−Cl]−ベンゾピラノ−[6,7,8−ij]−キノリジン−11−オンなどのクマリン系化合物などがある。
1H NMR (500 MHz, CDCl3, ppm) : 7.85-7.80 (2H, d, ArH), 7.55-7.48 (2H, m, ArH), 7.45-7.37 (3H, m, ArH), 7.23-7.18 (2H, d, ArH), 3.91 (2H, t, CH2), 3.39 (2H, t, CH2)
1H NMR (500 MHz, CDCl3, ppm) : 11.4 (1H, s, NOH), 7.85-7.80 (2H, d, ArH), 7.88-7.80 (2H, m, ArH), 7.50-7.44 (2H, m, ArH), 7.40-7.35 (3H, m, ArH), 7.13-7.08 (2H, d, ArH), 4.16-4.00 (4H, m, 2OCH2), 3.47 (2H, d, CH2), 1.26-1.15 (6H, m, 2CH3)
化学式4の化合物の製造
合成例1の(3)ステップにおいて、ベンゾイルクロライドの代わりにアセチルクロライドを使用したことを除いては、同様の方法で反応させて下記化学式4で表される光活性化合物を得た。下記化学式4で表される光活性化合物の1H−NMRを用いた測定結果は次の通りである。
化学式5の化合物の製造
合成例1の(1)ステップにおいて、ジフェニルスルフィドの代わりに4−ベンゾイルジフェニルスルフィドを使用したことを除いては、同様の方法で反応させて下記化学式5で表される光活性化合物を得た。下記化学式5で表される光活性化合物の1H−NMRを用いた測定結果は次の通りである。
化学式6の化合物の製造
合成例2の(1)ステップにおいて、ジフェニルスルフィドの代わりに4−ベンゾイルジフェニルスルフィドを使用したことを除いては、同様の方法で反応させて下記化学式6で表される光活性化合物を得た。下記化学式6で表される光活性化合物の1H−NMRを用いた測定結果は次の通りである。
着色感光性樹脂組成物の製造
アルカリ可溶性アクリル系バインダー{ベンジルメタアクリレート/N−フェニルマレイミド/スチレン/メタアクリル酸(モル比60/10/12/18、Mw=10000、80KOH mg/g)}8重量部、C.I.ピグメントグリーン58とC.I.ピグメントイエロー139とからなるグリーンミルベース43−49重量部、重合性化合物としてジペンタエリスリトールヘキサアクリレート16重量部、光重合開始剤として合成例1で製造された化学式3の化合物2.0重量部、および有機溶媒としてプロピレングリコールモノメチルエーテルアセテート(PGMEA)27〜33重量部を、シェーカを用いて3時間混合させて、感光性樹脂組成物を製造した。
着色感光性樹脂組成物の製造
前記実施例1において、合成例1で製造された化学式3の化合物の代わりに合成例2で製造された化学式4の化合物を使用したことを除いては、実施例1と同様の方法で感光性樹脂組成物を製造した。
前記実施例1において、合成例1で製造された化学式3の化合物の代わりにBASF社のOXE−02化合物を使用したことを除いては、実施例1と同様の方法で感光性樹脂組成物を製造した。
前記実施例1において、合成例1で製造された化学式3の化合物の代わりに韓国公開特許第10−2010−0092904号の実施例に記載の化学式7の化合物を使用したことを除いては、実施例1と同様の方法で感光性樹脂組成物を製造した。
前記製造された感光性樹脂組成物をガラス上にスピンコーティングした後、100℃で100秒間プリベーク(pre−bakeあるいはsoft bake)する過程を通じて、溶媒を適量除去する。コーティングされたガラスをi−line露光器によって露光した後、水酸化カリウム(KOH)を希釈させた現像液に現像し、230℃のオーブンで20分間ポストベーク(postbakeあるいはhardbake)した後、形成されたパターンのカラーおよび輝度を測定して下記表2に示した。
Claims (20)
- 下記化学式1で表される光活性化合物。
Yは、C 1 〜C15のアルキレン基であり、
M1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
R1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
R2〜R6のうちの少なくとも1つはXAであり、残りはそれぞれ独立に、Rであり、
Xは、O;S;S=O;およびSO2からなる群より選択され、
Aは、RおよびCORからなる群より選択される1つ以上の基で置換もしくは非置換のC6〜C20のアリール基であり、
Rは、水素、C1〜C10のアルキル基、C1〜C10のハロアルキル基およびC7〜C13のアリールアルキル基からなる群より選択される。 - 前記化学式1は、化学式2であることを特徴とする請求項1に記載の光活性化合物。
Yは、C 1 〜C15のアルキレン基であり、
M1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
R1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
Xは、O;S;S=O;およびSO2からなる群より選択され、
R2、R3、R5 およびR 6 の少なくとも一つは、XAであり、残りはそれぞれ独立にRであり、
R7、R8、R9、R10およびR11はそれぞれ独立に、RおよびCORからなる群より選択され、
Rは、水素、C1〜C10のアルキル基、C1〜C10のハロアルキル基およびC7〜C13のアリールアルキル基からなる群より選択される。 - 下記化学式1で表される光活性化合物と、
アルカリ可溶性バインダー樹脂と、
エチレン性不飽和結合を含む重合性化合物と、
溶媒とを含むことを特徴とする感光性樹脂組成物。
Yは、C 1 〜C15のアルキレン基であり、
M1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
R1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
R2〜R6のうちの少なくとも1つはXAであり、残りはそれぞれ独立に、Rであり、
Xは、O;S;S=O;およびSO2からなる群より選択され、
Aは、RおよびCORからなる群より選択される1つ以上の基で置換もしくは非置換のC6〜C20のアリール基であり、
Rは、水素、C1〜C10のアルキル基、C1〜C10のハロアルキル基およびC7〜C13のアリールアルキル基からなる群より選択される。 - 前記化学式1は、化学式2であることを特徴とする請求項4に記載の感光性樹脂組成物。
Yは、C 1 〜C15のアルキレン基であり、
M1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
R1は、C1〜C8のアルキル基;またはC6〜C12のアリール基であり、
Xは、O;S;S=O;およびSO2からなる群より選択され、
R2、R3、R5 およびR 6 の少なくとも一つは、XAであり、残りはそれぞれ独立にRであり、
R7、R8、R9、R10およびR11はそれぞれ独立に、RおよびCORからなる群より選択され、
Rは、水素、C1〜C10のアルキル基、C1〜C10のハロアルキル基およびC7〜C13のアリールアルキル基からなる群より選択される。 - 前記アルカリ可溶性バインダー樹脂は、酸価30〜300KOH mg/gであることを特徴とする請求項4から6のいずれか1項に記載の感光性樹脂組成物。
- 前記アルカリ可溶性バインダー樹脂は、重量平均分子量が1,000〜200,000であることを特徴とする請求項4から7のいずれか1項に記載の感光性樹脂組成物。
- 前記化学式1の光活性化合物の含有量は、感光性樹脂組成物の総重量を基準として0.1〜5重量%であることを特徴とする請求項4から8のいずれか1項に記載の感光性樹脂組成物。
- 前記アルカリ可溶性バインダー樹脂の含有量は、感光性樹脂組成物の総重量を基準として1〜30重量%であることを特徴とする請求項4から9のいずれか1項に記載の感光性樹脂組成物。
- 前記エチレン性不飽和結合を含む重合性化合物の含有量は、感光性樹脂組成物の総重量を基準として0.5〜30重量%であることを特徴とする請求項4から10のいずれか1項に記載の感光性樹脂組成物。
- 前記溶媒の含有量は、感光性樹脂組成物の総重量を基準として40〜95重量%であることを特徴とする請求項4から11のいずれか1項に記載の感光性樹脂組成物。
- 前記感光性樹脂組成物は、着色剤をさらに含むことを特徴とする請求項4から12のいずれか1項に記載の感光性樹脂組成物。
- 前記着色剤の含有量は、感光性樹脂組成物の総重量を基準として1〜20重量%であることを特徴とする請求項13に記載の感光性樹脂組成物。
- 前記感光性樹脂組成物は、第2光活性化合物をさらに含むことを特徴とする請求項4から14のいずれか1項に記載の感光性樹脂組成物。
- 前記第2光活性化合物の含有量は、感光性樹脂組成物の総重量を基準として0.1〜5重量%であることを特徴とする請求項15に記載の感光性樹脂組成物。
- 前記感光性樹脂組成物は、硬化促進剤、熱重合抑制剤、分散剤、酸化防止剤、紫外線吸収剤、レベリング剤、光増感剤、可塑剤、接着促進剤、充填剤および界面活性剤からなる群より選択される1つまたは2つ以上の添加剤をさらに含むことを特徴とする請求項4から16のいずれか1項に記載の感光性樹脂組成物。
- 前記添加剤の含有量は、感光性樹脂組成物の総重量を基準としてそれぞれ0.01〜5重量%であることを特徴とする請求項17に記載の感光性樹脂組成物。
- 請求項4から18のいずれか1項に記載の感光性樹脂組成物を用いて製造されたことを特徴とする感光材。
- 前記感光材は、TFT LCDカラーフィルタ製造用顔料分散型感光材、TFT LCDまたは有機発光ダイオードのブラックマトリックス形成用感光材、オーバーコート層形成用感光材、カラムスペーサ感光材および印刷配線盤用感光材からなる群より選択されることを特徴とする請求項19に記載の感光材。
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